利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

139 条记录 (耗时 0.032 秒)

    Input protection circuit for semiconductor integrated circuit device
    1.
    发明授权
    Input protection circuit for semiconductor integrated circuit device 失效
    半导体集成电路器件的输入保护电路

    公开(公告)号：US4994874A

    公开(公告)日：1991-02-19

    申请号：US425950

    申请日：1989-10-24

    申请人： Mitsuru Shimizu ,  Yoshio Okada ,  Syuso Fujii ,  Shozo Saito

    发明人： Mitsuru Shimizu ,  Yoshio Okada ,  Syuso Fujii ,  Shozo Saito

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L23/60 ,  H01L27/02

    CPC分类号： H01L27/0259

    摘要： First to third N.sup.+ -type impurity regions are formed separately from one another by a preset distance in the surface area of a P-type semiconductor substrate or a P-well region formed in an N-type semiconductor substrate. The first impurity region is connected to a power source and the second impurity region is connected to a ground terminal. The third impurity region formed between the first and second impurity regions is connected to one end of an input protection resistor which is connected at the other end to a signal input pad. The first impurity region, the third impurity region and that portion of the P-type semiconductor substrate or P-well region which lies between the first and third impurity regions constitute a first bipolar transistor for input protection and the second impurity region, the third impurity region and that portion of the P-type semiconductor substrate or P-well region which lies between the second and third impurity regions constitute a second bipolar transistor for input protection. The resistor and the first and second bipolar transistors constitute an input protection circuit.

    摘要翻译： 在N型半导体衬底中形成的P型半导体衬底或P阱区域的表面区域中，第一至第三N +型杂质区彼此分开地预定距离地形成。 第一杂质区域连接到电源，第二杂质区域连接到接地端子。 形成在第一和第二杂质区域之间的第三杂质区域连接到另一端连接到信号输入焊盘的输入保护电阻器的一端。 位于第一和第三杂质区域之间的第一杂质区域，第三杂质区域和P型半导体衬底或P阱区域的部分构成用于输入保护的第一双极晶体管，第二杂质区域，第三杂质区域 位于第二和第三杂质区之间的P型半导体衬底或P阱区的部分构成用于输入保护的第二双极晶体管。 电阻器和第一和第二双极晶体管构成输入保护电路。

    Semiconductor memory having barrier transistors connected between sense and restore circuits
    2.
    发明授权
    Semiconductor memory having barrier transistors connected between sense and restore circuits 失效
    半导体存储器具有连接在感测和恢复电路之间的阻挡晶体管

    公开(公告)号：US4931992A

    公开(公告)日：1990-06-05

    申请号：US310020

    申请日：1989-02-09

    申请人： Masaki Ogihara ,  Yoshio Okada ,  Syuso Fujii

    发明人： Masaki Ogihara ,  Yoshio Okada ,  Syuso Fujii

    IPC分类号： G11C11/4094

    CPC分类号： G11C11/4094

    摘要： A semiconductor memory comprises a memory cell for storing data, a bit line pair for transfering the data, a sense amplifier for amplifying the data from the bit line pair, a restore circuit directly connected to the bit line pair for restoring the data in the semiconductor memory, and a pair of constant voltage barrier transistors connected between the restore circuit and the sense amplifier for increasing the speed of sensing.

    摘要翻译： 半导体存储器包括用于存储数据的存储单元，用于传送数据的位线对，用于放大来自位线对的数据的读出放大器，直接连接到位线对的恢复电路，用于恢复半导体中的数据 存储器和连接在恢复电路和读出放大器之间的一对恒定电压势垒晶体管，用于增加感测速度。

    Intermediate potential generation circuit
    3.
    发明授权
    Intermediate potential generation circuit 失效
    中间电位生成电路

    公开(公告)号：US4663584A

    公开(公告)日：1987-05-05

    申请号：US868580

    申请日：1986-05-30

    申请人： Yoshio Okada ,  Mitsuru Shimizu

    发明人： Yoshio Okada ,  Mitsuru Shimizu

    IPC分类号： G05F3/24 ,  H03H11/24 ,  G05F5/08

    CPC分类号： G05F3/24 ,  H03H11/245

    摘要： Two intermediate potentials of small current driving capacity are generated using load elements and MOS transistors, and are respectively supplied to the gates of two MOS transistors which are series-connected between power sources and have large current driving capacity, thus obtaining an intermediate potential from a node between the MOS transistors. The MOS transistors at the output stage are complementarily operated so as not to be turned on at the same time.

    摘要翻译： 使用负载元件和MOS晶体管产生两个小电流驱动能力的中间电位，分别提供给串联在电源之间的两个MOS晶体管的栅极，并具有大的电流驱动能力，从而从 MOS晶体管之间的节点。 在输出级的MOS晶体管互补操作，以便不同时导通。

    Protection circuit for use in semiconductor integrated circuit device
    4.
    发明授权
    Protection circuit for use in semiconductor integrated circuit device 失效
    用于半导体集成电路设备的保护电路

    公开(公告)号：US5072271A

    公开(公告)日：1991-12-10

    申请号：US563120

    申请日：1990-08-06

    申请人： Mitsuru Shimizu ,  Yoshio Okada ,  Kiyofumi Sakurai

    发明人： Mitsuru Shimizu ,  Yoshio Okada ,  Kiyofumi Sakurai

    IPC分类号： H01L29/78 ,  H01L27/02 ,  H01L27/06 ,  H02H9/02

    CPC分类号： H01L27/0259

    摘要： A protection circuit is inserted between a signal input pad and an internal circuit. The protection circuit includes a parasitic bipolar transistor which is obtained by forming high-impurity concentration semiconductor regions in the major-surface region of a substrate. In practice, it is hard to provide a parasitic bipolar transistor of a sufficiently large size, since the reduction of the size of a chip is a recent trend. With this in mind, a third semiconductor region serving as an electron-trapping region is formed in a region outside of the location where the parasitic bipolar transistor is formed. If an excessive voltage produced by ESD or the like is applied to the pad, and the excessive voltage uncontrollable by the parasitic bipolar transistor, the third semiconductor region absorbs the excessive voltage. In particular, where the current capacity of the parasitic bipolar transistor is small, the third semiconductor region reliably prevents electrostatic destruction of a circuit element. Accordingly, the protection circuit enables the parasitic bipolar transistor to be reduced in size, thus contributing to miniaturization of a chip. Moreover, the protection circuit is reliable in operation.

    Power plant
    8.
    发明授权
    Power plant 有权
    发电厂

    公开(公告)号：US08485290B2

    公开(公告)日：2013-07-16

    申请号：US12078032

    申请日：2008-03-26

    申请人： Noriyuki Abe ,  Shigemitsu Akutsu ,  Yoshio Okada

    发明人： Noriyuki Abe ,  Shigemitsu Akutsu ,  Yoshio Okada

    IPC分类号： B60K6/00

    CPC分类号： B60K6/365 ,  B60K6/48 ,  B60K6/543 ,  F16H2037/0866 ,  Y02T10/6221

    摘要： A power plant which is capable of improving the drive efficiency and the power generation efficiency thereof when the electric power is generated using the power of a driven part thereof. A power plant has an internal combustion engine having a crankshaft, and a rotary motor having a rotor. A planetary gear train includes a sun gear, a ring gear, and a carrier rotatably supporting a planetary gear in mesh with the sun gear and the ring gear. The sun gear and the ring gear are connected to drive wheels. The carrier is connected to the crankshaft. The rotor is connected between one of the sun gear and the ring gear and the drive wheels. A transmission is connected between the other of the gears and the drive wheels, for varying a speed of power of the engine and transmitting the power to the drive wheels.

    摘要翻译： 一种能够在利用其被驱动部的动力产生电力的同时提高驱动效率和发电效率的发电厂。 发电厂具有具有曲轴的内燃机和具有转子的旋转电动机。 行星齿轮系包括太阳齿轮，环形齿轮和可转动地支撑与太阳齿轮和齿圈啮合的行星齿轮的行星架。 太阳齿轮和齿圈连接到驱动轮。 载体连接到曲轴。 转子连接在太阳齿轮和齿圈之一和驱动轮之间。 变速器连接在另一个齿轮和驱动轮之间，用于改变发动机的动力并将动力传递到驱动轮。

    SURFACE-COATED CUTTING TOOL
    9.
    发明申请
    SURFACE-COATED CUTTING TOOL 有权
    表面涂层切割工具

    公开(公告)号：US20130045057A1

    公开(公告)日：2013-02-21

    申请号：US13634209

    申请日：2011-12-05

    申请人： Chikako Kojima ,  Yoshio Okada ,  Hideaki Kanaoka ,  Hiroyuki Morimoto ,  Anongsack Paseuth ,  Erika Iwai

    发明人： Chikako Kojima ,  Yoshio Okada ,  Hideaki Kanaoka ,  Hiroyuki Morimoto ,  Anongsack Paseuth ,  Erika Iwai

    IPC分类号： B23B27/14

    CPC分类号： C23C16/34 ,  C23C16/403 ,  C23C16/45523 ,  C23C28/044 ,  C23C30/005 ,  Y10T407/27 ,  Y10T428/252

    摘要： A surface-coated cutting tool excellent in wear resistance is provided. The surface-coated cutting tool of the present invention includes a base material and a coating formed on the base material. The coating includes an inner layer and an outer layer. The inner layer is a single layer or a multilayer stack constituted of two or more layers made of at least one element selected from the group consisting of group IVa elements, group Va elements, group VIa elements in the periodic table, Al, and Si, or a compound of at least one element selected from this group and at least one element selected from the group consisting of carbon, nitrogen, oxygen, and boron. The outer layer includes α-aluminum oxide as a main component and exhibits an equivalent peak intensity PR(024) of a (024) plane of x-ray diffraction of larger than 1.3.

    摘要翻译： 提供了耐磨性优异的表面涂层切削工具。 本发明的表面覆盖切削工具包括基材和形成在基材上的涂层。 涂层包括内层和外层。 内层是由选自元素周期表中的IVa族元素，Va族元素，VIa族元素，Al和Si中的至少一种元素的两层或更多层构成的单层或多层堆叠， 或选自该组的至少一种元素的化合物和选自碳，氮，氧和硼的至少一种元素。 外层包含α-氧化铝作为主要成分，并且表现出x射线衍射的（024）面的等效峰强度PR（024）大于1.3。