Abstract:
Embodiments of the current invention describe methods of forming different types of crystalline silicon based solar cells that can be combinatorially varied and evaluated. Examples of these different types of solar cells include front and back contact silicon based solar cells, all-back contact solar cells and selective emitter solar cells. These methodologies all incorporate the formation of site-isolated regions using a combinatorial processing tool and the use of these site-isolated regions to form the solar cell area. Therefore, multiple solar cells may be rapidly formed on a single crystalline silicon substrate for use in combinatorial methodologies. Any of the individual processes of the methods described may be varied combinatorially to test varied process conditions or materials.
Abstract:
A lamp driver circuit to selectively energize one or more lamps is provided. The inverter circuit has a transformer with primary and secondary windings to provide voltage to the lamps. A filter is connected to the primary winding to receive a primary winding signal representative of the voltage across the primary winding. The primary winding signal has a frequency spectrum and the filter detects a particular characteristic of the frequency spectrum that is indicative of an end of life (EOL) condition of the one or more lamps. A control circuit is connected to the inverter circuit and to the filter. The control circuit is configured to discontinue energizing of the one or more lamps by the inverter circuit when the particular characteristic of the frequency spectrum of the primary winding signal is detected by the filter.
Abstract:
A ballast to energize a lamp at a selected lighting level is provided. The ballast includes a rectifier, a buck converter, and a controller. The rectifier produces a DC voltage with a substantially constant magnitude. The buck converter generates a lamp voltage output from the DC voltage based on a duty cycle. The output has a magnitude that is varied based on the duty cycle to energize the lamp at a selected lighting level. The controller receives a dim input signal indicating the selected lighting level, and provides an appropriate control signal to the buck converter. The appropriate control signal indicates a particular duty cycle corresponding to magnitude of the output to produce the selected lighting level. In response to receiving the control signal, the buck converter adjusts the duty cycle accordingly, producing the output having the magnitude to energize the lamp at the selected lighting level.
Abstract:
A bi-level lamp ballast to selectively operate two lamps is provided. The ballast includes a control circuit having an input, connected to a switching network, and an output, which provides a particular control signal based on the state of the switching network. The ballast also includes respective lamp control switches, each having respective outputs. The first switch is connected to the output and a ballast power supply. In its first state, it connects the ballast power supply to its first output, and in its second state, it connects the ballast power supply to its second output. The second switch is connected to the output and a ground. In its first state, it connects the ground to its first output, and in its second state, it connects the ground to its second output. The state of each lamp control switch depends on the control signal generated by the control circuit.
Abstract:
A lighting system converter circuit of a lamp power converter to selectively operate a plurality of lamps connected thereto is provided. The lighting system converter circuit includes a first impedance circuit and a second impedance circuit. Each impedance circuit includes an input terminal, an impedance component, and a switching network. The impedance components are each configured to connect in series with the lamps. Each input terminal is configured to receive a control signal that indicates a state of a switch. Each control signal has a first logic level, indicating the switch is non-conductive, and a second logic level, indicating the switch is conductive. Each switching network is connected to its respective input terminal and in parallel with its respective impedance component, and is configured to selectively operate between a conductive state and a non-conductive state, as a function of the logic level of its respective control signal.
Abstract:
Embodiments of the current invention include methods of improving a process of forming a textured TCO film by combinatorial methods. The combinatorial method may include depositing a TCO by physical vapor deposition or sputtering, annealing the TCO, and etching the TCO where at least one of the depositing, the annealing, or the etching is performed combinatorially. Embodiments of the current invention also include improved methods of forming the TCO based on the results of combinatorial testing.
Abstract:
Techniques are described for maintaining a forwarding information base (FIB) within a packet-forwarding engine (PFE) of a router, and programming a packet-forwarding integrated circuit (IC) with a hardware version of the FIB. Entries of the hardware version identify primary forwarding next hops and backup forwarding next hops for the LSPs, wherein the packet-forwarding IC includes a control logic module and internal selector block configured to produce a value indicating a state of the first physical link. The selector block outputs one of the primary forwarding next hop and the backup forwarding next hop of the entries for forwarding the MPLS packets based on the value in response to the packet-processing engine addressing one of the entries of the FIB for the LSPs. Packets are forwarded with the PFE to the one of the primary forwarding next hop and the backup forwarding next hop output by the selector block.
Abstract:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract:
A circuit or combined ballast for driving a fluorescent lamp and at least one light emitting diode (LED) includes an integrated driver circuit having an alternating current (AC) circuit that includes at least one ballast coil for driving the fluorescent lamp and a direct current circuit for driving the LED having a secondary winding inductively coupled with the fluorescent lamp ballast coil for driving the LED. A method of driving a lamp assembly includes at least one fluorescent lamp and at least one light emitting diode (LED) and a combined driver circuit for supplying both the fluorescent lamp and the LED. The combined driver circuit supplies high voltage AC supply to a first portion of the driver circuit to the fluorescent lamp, supplies low voltage DC supply in a second portion of the driver circuit to the LED, and provides a secondary winding in the second portion of the driver circuit that is inductively coupled with a ballast coil in the first portion of the driver circuit that drives the fluorescent lamp.
Abstract:
Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.