摘要:
There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.
摘要:
An electroless gold plating solution is provided that contains no cyanide compound as a source of gold and that contains a decomposition inhibitor represented by general formula (1), provided that, in a case in which the solution contains a gold complex of sulfite and the decomposition inhibitor is cytosine, the pH 6.0 or less is excluded. In the formula, R1 to R4 denote hydrogen atom(s), alkyl group(s) having 1 to 10 carbon atom(s), which may have substituent(s), aryl group(s) having 6 to 10 carbon atoms, which may have substituent(s), alkoxy group(s) having 1 to 10 carbon atom(s), which may have substituent(s), amino group(s) (—NH2), hydroxyl group(s) (—OH), ═O, or halogen atom(s), R2 and R3 or R3 and R4 may crosslink with each other and form a saturated or unsaturated ring and the saturated or unsaturated ring may include oxygen, sulfur or nitrogen atom(s), each of the above-mentioned substituents may be a halogen atom or a cyano group, and may be a single bond or a double bond.
摘要:
A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.
摘要:
A cleaning solution for a mask used in a vacuum vapor deposition step in the production of a low molecular weight organic EL device is provided, the cleaning solution including one type or two or more types of aprotic polar solvent. There is also provided a cleaning method for a mask used in a vacuum vapor deposition step in the production of a low molecular weight organic EL device, wherein cleaning is carried out by immersion or jet flow using the cleaning solution.
摘要:
The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from the group consisting of polysulfonic acid compounds and polyoxyethylene-polyoxypropylene block copolymers.
摘要:
The present invention aims to provide an etching solution composition which enables to etch a metal film in a controllable manner, form a desired definite tapered shape, and obtain a smooth surface without causing etching solution exudation trace. Said problems have been solved by the present invention, which is an etching solution composition for etching metal films containing one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid and the salts thereof.
摘要:
An electroless gold plating solution is provided that contains no cyanide compound as a source of gold and that contains a decomposition inhibitor represented by general formula (1) (provided that a case in which the solution contains a gold complex of sulfite, the decomposition inhibitor is cytosine, and the pH is 6.0 or less is excluded) 1 in the formula, R1 to R4 denote hydrogen atom(s), alkyl group(s) having 1 to 10 carbon atom(s), which may have substituent(s), aryl group(s) having 6 to 10 carbon atoms, which may have substituent(s), alkoxy group(s) having 1 to 10 carbon atom(s), which may have substituent(s), amino group(s) (nullNH2), hydroxyl group(s) (nullOH), nullO, or halogen atom(s), R2 and R3 or R3 and R4 may crosslink with each other and form a saturated or unsaturated ring and the saturated or unsaturated ring may include oxygen, sulfer or nitrogen atom(s), each of the above-mentioned substituents is a halogen atom or a cyano group, and 2 is a single bond or a double bond.
摘要:
The invention provides novel ruthenium complexes having an optically active diphosphine compound, which has asymmetry on carbon and is easy to synthesize, as the ligand and a process for preparing optically active alcoholic compounds using said complexes as the catalysts, wherein said process is the process for preparing optically active alcoholic compounds, which are excellent in terms of reactivity, enatioselectivity and the like in an asymmetric hydrogenation of carbonyl compounds compared with conventional ruthenium complex catalysts having an optically active diphosphine compound having the axial chirality or the asymmetry on carbon as the ligand. In a preferred embodiment, the invention provides an optically active ruthenium complex represented by the general formula (1) 1 wherein X and Y, which can be identical to or different from each other, represent a hydrogen atom or an anion group, R1 and R2, which can be identical to or different from each other, represent a chain or cyclic hydrocarbon group of carbon number 1 to 20, which can be substituted, R3 and R4, which can be identical to or different from each other, represent a hydrogen atom or a hydrocarbon group of carbon number 1 to 3, and R5, R6, R7 and R8, which can be identical to or different from one another, represent a hydrocarbon group of carbon number 1 to 30, which can be substituted, with the proviso that when X and Y are bromine, R1 and R2 are a methyl group, and when R3 and R4 are a hydrogen atom, at least one of R5, R6, R7 and R8is not a phenyl group.
摘要:
The object of the present invention is to simplify the process of connecting a reservoir for charging and discharging 2 or more fluids with a pipeline for conveying said fluid and to assist the automation of this process.In the present invention, a reservoir, having, at its end face, 2 or more openings for fluids for charging and discharging 2 or more fluids respectively, is connected with pipelines by using a connecting means having flow paths for 2 or more fluids and, at its end face, 2 or more openings for fluids corresponding to each of the flow paths, and each of the respective fluids is passed, when by aligning the center of 1 of the openings for fluids of the reservoir end face with 1 of the openings for fluids of the connecting means end face and by linking said openings for fluids to each other, closed passage spaces are respectively formed which are common to the 1 or more other opening(s) for fluids of the reservoir end face and to the 1 or more corresponding other opening(s) of the connecting means end face respectively, and each fluid is passed via said spaces respectively.
摘要:
The object of the invention resides in the development of an improved process for synthesizing metallocene compounds useful as olefin polymerization catalysts.A new process for synthesizing metallocene compounds of formulae (IV) and (IV') comprises a reaction of formula (I) with formula (II) or (II') to afford formula (III) or (III'), and then a reaction of a halogenating agent.In formulae (IV) and (IV') described below, M.sup.1 is a group IV transition-metal atom, L.sup.1 and L.sup.2 can be each other identical or different and are substituted or unsubstituted cyclopentadienyl, substituted or unsubstituted indenyl or substituted or unsubstituted fluorenyl groups, B is a hydrocarbon having 1-20 carbon atoms, silylene having 1-20 carbon atoms, oligosilylene or germylene groups, binding to L.sup.1 and L.sup.2, Y can be identical or different and is each independently of one another a halogen atom. Further, M.sup.1 can be coordinated with an ether or an amine at any coordination number. ##STR1##