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    Cleaning solution for semiconductor substrate
    3.
    发明授权
    Cleaning solution for semiconductor substrate 失效
    半导体衬底清洗液

    公开(公告)号：US07312186B2

    公开(公告)日：2007-12-25

    申请号：US10750971

    申请日：2004-01-05

    申请人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

    发明人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

    IPC分类号： C11D1/72 ,  C11D1/722 ,  C11D7/08 ,  C11D9/22

    CPC分类号： H01L21/02074 ,  C11D1/722 ,  C11D3/2086 ,  C11D3/2093 ,  C11D3/33 ,  C11D3/361 ,  C11D11/0047 ,  H01L21/02065

    摘要： A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator: CH3—(CH2)l—O—(CmH2mO)n—X   (1) wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group; CH3—(CH2)a—O—(CbH2bO)d—(CxH2xO)y—X   (2) wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

    摘要翻译： 一种用于半导体衬底的清洁溶液，其包含式（1）和/或式（2）的非离子表面活性剂，螯合剂和螯合促进剂：<？in-line-formula description =“In-Line Formulas” 结束=“铅”→CH 3 - （CH 2） ＆lt; 2m＆lt; O＆lt; n＆gt; -X（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中l，m和 n独立地表示正数，X表示氢原子或烃基; <？in-line-formula description =“In-line Formulas”end =“lead”？> CH 3 - （CH 2） > - （C b H 2b）O - （C x H 2 H 2） 其中a，b，d，x和y分别代表一个或多个，其中a，b，d，x和y 独立地表示正数，b和x不同，X表示氢原子或烃基。

    Method of manufacturing semiconductor device and apparatus for cleaning substrate
    6.
    发明授权
    Method of manufacturing semiconductor device and apparatus for cleaning substrate 失效
    半导体装置的制造方法及清洗基板的装置

    公开(公告)号：US06890391B2

    公开(公告)日：2005-05-10

    申请号：US10680216

    申请日：2003-10-08

    申请人： Hidemitsu Aoki ,  Yoshiko Kasama ,  Tatsuya Suzuki

    发明人： Hidemitsu Aoki ,  Yoshiko Kasama ,  Tatsuya Suzuki

    IPC分类号： H01L21/304 ,  B08B3/02 ,  B08B3/08 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  B08B3/04

    CPC分类号： H01L21/02071 ,  B08B3/02 ,  B08B3/08 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67051 ,  Y10S134/902

    摘要： The stripping agent is sprayed from the tip of the nozzle 33 onto the wafer surface, while the first supply nozzle 33 is actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual droplet 38 is pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzle 36 also scans at a same scanning speed as the first supply nozzle 33 scans. Vapor IPA is sprayed from the orifice of the second supply nozzle 36. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle 33, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.

    摘要翻译： 剥离剂从喷嘴33的尖端喷射到晶片表面上，同时第一供给喷嘴33被致动以从晶片的中心部分到其外部扫描。 该操作提供了这样一种情况，其中残余液滴38的界面由从喷嘴提供的汽提剂的表面张力从晶片的中心向晶片的外部部分拉回。 同时，第二供给喷嘴36也以与第一供给喷嘴33扫描相同的扫描速度进行扫描。 从第二供应喷嘴36的孔口喷射蒸气IPA。 这提供了在从第一供给喷嘴33喷射汽提剂之后立即将蒸气IPA喷射到晶片表面上，并且用IPA有效地替换晶片表面上的残余剥离剂。

    Method of forming a high-k film on a semiconductor device
    7.
    发明授权
    Method of forming a high-k film on a semiconductor device 有权
    在半导体器件上形成高k膜的方法

    公开(公告)号：US07192835B2

    公开(公告)日：2007-03-20

    申请号：US10854306

    申请日：2004-05-27

    申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    IPC分类号： H01L21/302 ,  H01L21/336

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

    摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

    摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿蚀刻被选择性地通过多晶硅层56的掩模去除。 对于蚀刻剂溶液使用磷酸和硫酸的液体混合物。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。