摘要:
In an input scanner for recording hard-copy images by exposing areas of the image to an array of photosensors, a system ensures sensor array uniformity. With each cycle of passing a discrete image signal through an amplifier associated with each photosensor, a low standby current is applied to certain transistors within the amplifier until the next signal is to be output. Critical nodes within the amplifier are caused to settle to known charge values before each image signal is passed therethrough.
摘要:
Described is a new high performance CCD image sensor technology which can be used to build a versatile image senor family with the sensors that have high resolution and high pixel density. The described sensor architectures are based on a new charge super sweep concept which was developed to overcome such common problems as blooming and the image smear. The charge super sweep takes place in very narrow vertical channels located between the photosites similar to the Interline Transfer CCD devices. The difference here is that the charge is never stored in these regions for any significant length of time and is swept out using a new resistive gate traveling wave sweeping technique. The charge super sweep approach also allows the fast charge transfer of several lines of data from the photosites located anywhere in the array into the buffer storage during a single horizontal blanking interval.
摘要翻译:描述了一种新的高性能CCD图像传感器技术,可用于构建具有高分辨率和高像素密度的传感器的通用图像传感器系列。 所描述的传感器架构基于新的充电超扫描概念,其被开发用于克服诸如开花和图像涂片的常见问题。 电荷超扫描发生在位于类似于Interline Transfer CCD器件的光电子之间的非常窄的垂直通道中。 这里的区别在于,在任何相当长的时间内,电荷从不存储在这些区域中,并且使用新的电阻栅极行波扫描技术扫除。 电荷超扫描方法还允许在单个水平消隐间隔期间将位于阵列中任何位置的光子的几行数据快速电荷传输到缓冲存储器中。
摘要:
An infrared imaging array includes a plurality of photodetectors arranged in a two-dimensional array. A first charge read-out gate is associated with each photodetector and reads out electrical charges from the associated photodetector receiving first charge read-out clock pulses output from a vertical scanner. A charge storage element is connected to each column of photodetectors and includes a storage gate opposite which a potential well is formed in a substrate. The electrical charges transferred from the photodetectors in each column are stored in the potential well. A second charge read-out gate is associated with each charge storage element and transfers the electrical charges stored in the associated charge storage element to an output diode receiving second charge read-out clock pulses from a horizontal scanner. In the present invention, an insulating film underlying the charge storage gate has a thickness that decreases stepwise in the charge transfer direction so that the depth of the potential well created opposite the storage gate increases stepwise, producing an electric field in the charge transfer direction. Therefore, a small quantity of electrical charges remaining in the potential well drift in response to the electric field, increasing charge transfer speed.
摘要:
A shift register of a CCD line image sensor is divided into two from the center thereof so as to transfer the signal electrical charge for output portions placed on both ends of the sensor, so that the line image sensor has a higher data rate, and reduced optical smearing. Furthermore, when a color line image sensor has been made using such line image sensors, the clearance of the sensor may be made smaller, and the amount of the correction smear for positioning alignment may be reduced.
摘要:
A camera system and method of operation is disclosed which produces an NTSC type interlaced signal from a high resolution non-interlaced camera system by summing in a shift register first and second rows thereof and discarding via diodes on a charge coupled device (CCD) sensor chip third and fourth rows of every four rows of pixel information to produce odd fields of an interlaced signal. Even fields are produced by discarding the first and second rows and summing the third and fourth rows. Sync and blanking pulses may be added to complete the signal.
摘要:
A CCD image sensor includes a plurality of uniformly spaced photodiodes arranged in series in vertical and horizontal directions, a horizontal signal transferring region formed integrally in a zigzag from between adjacent sets of said plurality of horizontally arranged photodiodes, a signal flowing direction changing region formed under the last set of the plurality of horizontally arranged photodiodes and at output of the horizontal signal transferring region, a signal processing region for storing temporarily signal charges from the horizontal signal transferring region or the signal charges from the signal flowing direction changing region and then resetting the signal charges, and a sensing amplifier for sensing states of the signal charges being temporarily stored in the signal processing region and amplifying the sensed states of the signal charges by a predetermined amplification degree, whereby the CCD image sensor is capable of being driven by a small number of clock signals so that it can be applied to a system requiring a lower resolution.
摘要:
In a CCD element, the influence of a parasitic capacitance existing between a floating diffusion region and a reset gate section of an output section is suppressed to increase sensitivity. In a CCD element in which a floating diffusion region (7) is connected to the final stage of a charge transfer register (1) having a CCD structure through a horizontal output gate section (5) and a reset gate section (11) is disposed between the floating diffusion region (7) and a reset drain region (10), an output gate pulse (.phi..sub.HOG) having an anti-phase of a reset pulse (.phi..sub.RG) applied to the reset gate section (11) is applied to the horizontal output gate section (5). Further, an output waveform in a signal period in a CCD linear sensor can be made flat and a signal level difference between odd-numbered and even-numbered pixels can be improved. In a CCD linear sensor comprising a photo sensing region formed of a plurality of photo sensing elements (pixels), first and second horizontal transfer registers disposed at both sides of the photo sensing region through read-out gate sections, a floating diffusion region for alternately detecting signal charges transferred thereto from the first and second horizontal transfer registers as output signals and a reset gate section, a transfer section of the final stage portion of the first and second horizontal transfer registers is separated and phases of drive pulses (.phi.H.sub.1 '), (.phi.H.sub.2 ') applied to the transfer section of the final stage portion are shifted from those of drive pulses (.phi.H.sub.1), (.phi.H.sub.2) applied to the preceding transfer section, whereby a noise component (36) is superimposed upon the output waveform of ON period (T.sub.R) of the reset gate section.
摘要:
The present invention is a method and apparatus for transferring data from an imaging device. An image array is used to capture an image arranged in columns and rows of charges held in pixels in the image array. These charges are then transferred through a group of vertical registers to a storage register. Once in the storage register rows which have not been selected for transfer are dumped to a dump drain. Rows that have been selected for transfer continue through the vertical registers until they reach a pair of transfer registers from which the rows are output.
摘要:
With the CCD imager of the present invention, signal charges from the image area are transferred by plural juxtaposed read-out registers. The storage region of the read-out registers, through which electrical charges are transmitted, is narrower in width at the image area side and broader in width at the other read-out register side. By virtue of such arrangement of the storage area, there is formed a potential which becomes shallow at the side of the image area and becomes deep at the side of the other read-out registers. By such potential, signal charge transfer efficiency between the read-out registers is improved.
摘要:
An image sensor comprises a linear image sensor including several blocks of photo sensing elements, switching elements connected to the photo sensing elements respectively, and common signal lines connected to the blocks of photo sensing elements. In a crosstalk cancelling method for the image sensor, a dimensionless value representing the width of variation of the output signal due to crosstalk is defined as a gradation reproduction rate, and the sensor output is corrected according to the gradation reproduction rate. The gradation reproduction rate is determined irrespective to the total number of photo sensing elements; that is, it is determined only by layout of the wiring conductors. Therefore, by arranging the matrix wiring conductors which are electrically equal to one another in the effect of crosstalk, the crosstalk with the matrix wiring conductors can be generally evaluated and controlled irrespective of the design, and the output from which the effect of crosstalk is eliminated can be provided by simple operation.