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公开(公告)号：US20240337896A1
公开(公告)日：2024-10-10
申请号：US17384159
申请日：2021-07-23
Applicant: International Business Machines Corporation
Inventor： Abram L. Falk , Chi Xiong , SWETHA KAMLAPURKAR , Jason S. Orcutt
CPC classification number: G02F1/3507 , G02F1/3503 , G02F1/3534 , G02F1/355 , H10N60/82 , H10N60/85 , G06N10/40 , H01P7/082
Abstract: Techniques regarding quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can comprise a superconducting microwave resonator having a microstrip architecture that can include a dielectric substrate positioned between a superconducting waveguide and a superconducting ground plane. The superconducting waveguide can have a first material composition. Also, the superconducting ground plane can have a second material composition that is distinct from the first material composition. Further, an optical resonator can be arranged with the dielectric substrate.
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公开(公告)号：US12035641B2
公开(公告)日：2024-07-09
申请号：US17564133
申请日：2021-12-28
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Steven J. Holmes , Devendra K. Sadana , Oleg Gluschenkov , Martin O. Sandberg , Marinus Johannes Petrus Hopstaken , Yasir Sulehria
CPC classification number: H10N60/12 , H10N60/0912 , H10N60/805 , H10N60/85
Abstract: A Josephson Junction qubit device is provided. The device includes a substrate of silicon material. The device includes first and second electrodes of superconducting metal. The device may include a nanowire created by direct ion implantation on to the silicon material to connect the first and second electrodes. The device may include first and second superconducting regions created by direct ion implantation on to the silicon material, the first superconducting region connecting the first electrode and the second superconducting region connecting the second electrode, with a silicon channel formed by a gap between the first and second superconducting regions.
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公开(公告)号：US20240164222A1
公开(公告)日：2024-05-16
申请号：US18507843
申请日：2023-11-13
Applicant: Cornell University
Inventor： Zeming SUN , Thomas OSEROFF , Matthias LIEPE
CPC classification number: H10N60/85 , H10N60/0156 , H10N60/805 , H10N60/855
Abstract: Provided is a niobium-zirconium (Nb—Zr) alloy comprising an ordered body-centered cubic (bcc) β-Nb—Zr phase, methods for making the same, a superconducting radio-frequency (SRF) cavity surface comprising the Nb—Zr alloy, a particle accelerator wherein an SRF cavity comprising the Nb—Zr alloy, a superconductor-insulator-superconductor tunnel junction (SIS) wherein a first superconductor/electrode and the second superconductor/electrode comprise the Nb—Zr alloy, and a quantum computer or quantum computing device comprising an SRF cavity or a resonator wherein at least a portion of at least one surface of the SRF cavity or resonator comprising the Nb—Zr alloy. The Nb—Zr alloy, e.g., produced under ambient conditions, comprises less than or equal to 50 at. % Zr and yields critical temperatures up to, e.g., 16.5 K.
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公开(公告)号：US20240164221A1
公开(公告)日：2024-05-16
申请号：US18486548
申请日：2023-10-13
Applicant: Alibaba Damo (Hangzhou) Technology Co., Ltd.
Inventor： Hao DENG , Xiaohang ZHANG
Abstract: The present disclosure discloses a method for treating a tantalum metal thin film, a quantum device, and a quantum chip. The method includes: preparing an initial tantalum metal thin film; and increasing, after cooling the initial tantalum metal thin film to a predetermined extremely low temperature, the temperature from the predetermined extremely low temperature to normal temperature to obtain a target tantalum metal thin film. The present disclosure solves the technical problem in the related technology: a post-treatment technology for a tantalum metal thin film after preparation of the tantalum metal thin film has a limited positive effect on reducing the energy dissipation of a tantalum-based superconducting quantum device.
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公开(公告)号：US11949387B2
公开(公告)日：2024-04-02
申请号：US17858043
申请日：2022-07-05
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Baleegh Abdo
CPC classification number: H03F19/00 , H10N60/85 , H03F2200/255 , H03F2200/267 , H03F2200/423
Abstract: A bandpass parametric amplifier circuit includes a plurality of unit cells. At least one unit cell includes a first inductor having a first node coupled to a center conductor and a second node coupled to ground. There is a first capacitor having a first node coupled to the center conductor and a second node coupled to ground. There is a second inductor having a first node coupled to the center conductor. A second capacitor has a first node coupled to a second node of the second inductor. The second capacitor and the second inductor are in series with the center conductor.
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Patent Agency Ranking
公开(公告)号：US20240062933A1
公开(公告)日：2024-02-22
申请号：US17945351
申请日：2022-09-15
Applicant: Ambature, Inc.
Inventor： Douglas J. Gilbert , Timothy S. Cale
CPC classification number: H01B12/06 , H01B1/08 , H01C7/00 , H10N60/01 , H10N60/85 , H10N60/0268 , H10N60/855 , H10N60/0856 , H10N60/857 , B05D1/36 , H01B12/14 , Y10T428/31678 , H10N60/0661
Abstract: Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
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47.发明授权公开(公告)号：US11867775B2
公开(公告)日：2024-01-09
申请号：US17435807
申请日：2020-03-04
Applicant: UNIVERSITY OF MARYLAND, COLLEGE PARK , GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
Inventor： Randolph Elmquist , Albert Rigosi , Mattias Kruskopf
IPC: G01R33/00 , G01R33/035 , G01R33/07 , H10N60/81 , H10N60/85
CPC classification number: G01R33/0052 , G01R33/035 , G01R33/07 , H10N60/81 , H10N60/85
Abstract: A quantum Hall resistance apparatus is to improve resistance standards and includes a substrate, a graphene epitaxially grown on the substrate and having a plurality of first contact patterns at edges of the graphene, a plurality of contacts, each including a second contact pattern and configured to connect to a corresponding first contact pattern, and a protective layer configured to protect the graphene and to increase adherence between the first contact patterns and the second contact patterns. The contacts become a superconductor at a temperature lower than or equal to a predetermined temperature and under up to a predetermined magnetic flux density.
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公开(公告)号：US11832532B2
公开(公告)日：2023-11-28
申请号：US16798195
申请日：2020-02-21
Applicant: PsiQuantum Corp.
Inventor： Faraz Najafi
Abstract: A device includes a superconductor layer and a piezoelectric layer positioned adjacent to the superconductor layer. The piezoelectric layer is configured to apply a first strain to the superconductor layer in response to receiving a first voltage that is below a predefined voltage threshold and to apply a second strain to the superconductor layer in response to receiving a second voltage that is above the predefined voltage threshold. While the device is maintained below a superconducting threshold temperature for the superconductor layer and is supplied with current below a superconducting threshold current for the superconductor layer, the superconductor layer is configured to 1) operate in a superconducting state when the piezoelectric layer applies the first strain to the superconductor layer and 2) operate in an insulating state when the piezoelectric layer applies the second strain to the superconductor layer.
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公开(公告)号：US20230301203A1
公开(公告)日：2023-09-21
申请号：US18017075
申请日：2021-07-20
Applicant: University of Rochester , THE BOARD OF REGENTS OF THE NEVADA SYSTEM OF HIGHER EDUCATION ON BEHALF OF THE UNIVERSITY OF NEVADA
Inventor： Liyanagamage R. Dias , Ashkan Salamat
CPC classification number: H10N60/85 , H10N60/0661 , H10N60/0772 , H10N60/0884
Abstract: Compositions of matter and methods of identifying and making compositions of matter are disclosed. Some embodiments disclose making and chemically and/or compositionally tuning superconducting hydride materials. Some embodiments disclose an apparatus for making and compositionally tuning superconducting materials. Some embodiments disclose a composition of matter including a solid hydride exhibiting superconductivity at a temperature of at least 150 kelvin at an ambient pressure below 180 gigapascals, or at a temperature of at least 261 kelvin. In one or more embodiments, the superconductor includes a covalent metal hydride having at least three different chemical elements wherein an inter-atomic distance between the hydrogen in the covalent metal hydride is in a range of 1.1-2 angstroms. In yet further examples, the superconductor is formed using molecular exchange and compression of a Van der Waals solid. In yet further examples, the superconductor comprises molecular hydrogen disposed in 1-dimensional channels. These and other embodiments are disclosed herein.
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公开(公告)号：US11728772B2
公开(公告)日：2023-08-15
申请号：US17224702
申请日：2021-04-07
Applicant: International Business Machines Corporation
Inventor： Baleegh Abdo
IPC: H03D7/00 , G06N10/00 , H03F19/00 , H03H3/08 , H03H9/02 , H03H9/24 , H03H9/25 , H10N60/12 , H10N60/85 , H10N60/80 , H10N60/01
CPC classification number: H03D7/005 , G06N10/00 , H03F19/00 , H03H3/08 , H03H9/02637 , H03H9/24 , H03H9/25 , H10N60/0912 , H10N60/12 , H10N60/805 , H10N60/85 , H03F2200/451
Abstract: A superconducting device that mixes surface acoustic waves and microwave signals and techniques for fabricating the same are provided. A superconducting device can comprise a superconducting surface acoustic wave resonator and a superconducting microwave resonator. The superconducting device can also comprise a Josephson ring modulator coupled to the superconducting surface acoustic wave resonator and the superconducting microwave resonator. The Josephson ring modulator can be a dispersive nonlinear three-wave mixing element.
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