公开(公告)号：US20050189870A1

公开(公告)日：2005-09-01

申请号：US11068067

申请日：2005-02-26

Applicant: Sang-Jo Lee ,  Chun-Gyoo Lee ,  Sang-Hyuck Ahn ,  Su-Bong Hong ,  Byong-Gon Lee ,  Sang-Ho Jeon ,  Yong-Soo Choi

Inventor： Sang-Jo Lee ,  Chun-Gyoo Lee ,  Sang-Hyuck Ahn ,  Su-Bong Hong ,  Byong-Gon Lee ,  Sang-Ho Jeon ,  Yong-Soo Choi

IPC: H01J1/304 ,  H01J3/02 ,  H01J1/62

CPC classification number: H01J3/022

Abstract: An electron emission device includes gate electrodes formed on a substrate. The gate electrodes are located on a first plane. An insulating layer is formed on the gate electrodes. Cathode electrodes are formed on the insulating layer. Electron emission regions are electrically connected to the cathode electrodes. The electron emission regions are located on a second plane. In addition, the electron emission device includes counter electrodes placed substantially on the second plane of the electron emission regions. The gate electrodes and the counter electrodes are for receiving a same voltage, and a distance, D, between at least one of the electron emission regions and at least one of the counter electrodes satisfies the following condition: 1(μm)≦D≦28.1553+1.7060t(μm), where t indicates a thickness of the insulating layer.

Abstract translation: 电子发射器件包括形成在衬底上的栅电极。 栅电极位于第一平面上。 在栅电极上形成绝缘层。 阴极电极形成在绝缘层上。 电子发射区域电连接到阴极电极。 电子发射区位于第二平面上。 此外，电子发射装置包括基本上放置在电子发射区的第二平面上的相对电极。 栅电极和对电极用于接收相同的电压，并且至少一个电子发射区域和至少一个相对电极之间的距离D满足以下条件：1（mum）<= D < = 28.1553 + 1.7060t（mum），其中t表示绝缘层的厚度。

公开(公告)号：US20050189865A1

公开(公告)日：2005-09-01

申请号：US10980677

申请日：2004-11-02

Applicant: Sang-Jin Lee

Inventor： Sang-Jin Lee

IPC: H01J29/04 ,  H01J1/00 ,  H01J1/30 ,  H01J1/304 ,  H01J1/62 ,  H01J3/02 ,  H01J29/06 ,  H01J31/12 ,  H01J63/04

CPC classification number: H01J3/022

Abstract: An electron emission device includes cathode electrodes and gate electrodes formed on a first substrate and crossing each other while interposing an insulation layer. Opening portions are formed at the gate electrodes and the insulation layer while exposing the cathode electrodes. Electron emission sources are formed on the cathode electrodes exposed through the opening portions each with an area smaller than the area of the opening portion. An anode electrode is formed on a second substrate. Phosphor layers are formed on the anode electrode each with long sides proceeding in a first direction and short sides proceeding in a second direction. When the first substrate is viewed from the plan side, the electron emission source satisfies the following condition: a

Abstract translation: 电子发射装置包括阴极电极和形成在第一衬底上的栅极，并且在插入绝缘层的同时彼此交叉。 在阴极电极露出的同时，在栅电极和绝缘层上形成开口部。 电子发射源形成在通过开口部暴露的阴极电极，每个阴极电极的面积小于开口部分的面积。 在第二基板上形成阳极电极。 在阳极电极上形成荧光体层，其长边沿第一方向进行，短边沿第二方向进行。 当从平面侧观察第一衬底时，电子发射源满足以下条件：a

公开(公告)号：US06933664B2

公开(公告)日：2005-08-23

申请号：US10464760

申请日：2003-06-19

Applicant: Shin Kitamura ,  Yoshiyuki Osada

Inventor： Shin Kitamura ,  Yoshiyuki Osada

IPC: H01J29/04 ,  H01J1/304 ,  H01J1/312 ,  H01J3/02 ,  H01J31/12 ,  H01J1/02

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J3/021 ,  Y10S977/939

Abstract: An electron emitting device includes a first electrode located on a substrate, an insulating layer located on the first electrode, and a second electrode located on the insulating layer. The second electrode has a first surface and a second surface, which are substantially vertical to a direction that the first electrode and the insulating layer are laminated. The first surface of the second electrode is in contact with the insulating layer. A higher potential than that applied to the second electrode is applied to the first electrode to emit an electron from the second surface.

Abstract translation: 电子发射器件包括位于衬底上的第一电极，位于第一电极上的绝缘层和位于绝缘层上的第二电极。 第二电极具有与第一电极和绝缘层层叠的方向基本垂直的第一表面和第二表面。 第二电极的第一表面与绝缘层接触。 比施加到第二电极的电位高的电位被施加到第一电极以从第二表面发射电子。

公开(公告)号：US20050174028A1

公开(公告)日：2005-08-11

申请号：US11048810

申请日：2005-02-03

Applicant: Jae-Eun Jung ,  Jong-Min Kim ,  Tae-Sik Oh ,  Young-Jun Park

Inventor： Jae-Eun Jung ,  Jong-Min Kim ,  Tae-Sik Oh ,  Young-Jun Park

IPC: G02F1/13357 ,  F21S2/00 ,  F21Y105/00 ,  H01J1/304 ,  H01J3/02 ,  H01J29/48 ,  H01J63/06 ,  H01J1/02 ,  H01J1/14

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J3/022 ,  H01J29/481 ,  H01J63/06 ,  H01J2201/30469

Abstract: A field emission device and a backlight device using the field emission device includes a cathode electrode and a gate electrode formed in alternating parallel strips on a substrate, a catalytic metal layer arranged on the cathode electrode and adapted to enhance Carbon NanoTube (CNT) growth, and grown CNTs arranged on the catalytic metal layer.

Abstract translation: 场致发射器件和使用场致发射器件的背光装置包括阴极电极和在基底上以交替的平行条形成的栅电极，布置在阴极上的催化金属层，并适于增强碳纳米管（CNT）生长， 并且生长的CNT布置在催化金属层上。

公开(公告)号：US20050168128A1

公开(公告)日：2005-08-04

申请号：US11046285

申请日：2005-01-27

Applicant: Jung-Ho Kang

Inventor： Jung-Ho Kang

IPC: H01J1/30 ,  H01J1/62 ,  H01J3/02 ,  H01J9/02 ,  H01J63/04

CPC classification number: H01J3/022 ,  H01J9/025

Abstract: An electron emission device includes first and second substrates facing each other, first electrodes formed on the first substrate, and second electrodes separated from the first electrodes by interposing an insulating layer. The first electrodes have first sub electrodes which with a partially removed portions, and second sub electrodes formed on at least one surface of the first sub electrodes with a transparent conductive material. Electron emission regions are formed on the second sub electrodes within the partially removed portions of the first sub electrodes. The electron emission regions are in surface contact with the second sub electrodes.

Abstract translation: 电子发射装置包括彼此面对的第一和第二基板，形成在第一基板上的第一电极和通过插入绝缘层与第一电极分离的第二电极。 第一电极具有第一子电极，其具有部分去除的部分，以及在第一子电极的至少一个表面上形成有透明导电材料的第二子电极。 电子发射区形成在第一子电极的部分去除部分中的第二子电极上。 电子发射区域与第二子电极表面接触。

公开(公告)号：US20050139817A1

公开(公告)日：2005-06-30

申请号：US11002242

申请日：2004-12-03

Applicant: Jun-Hee Choi ,  Andrei Zoulkarneev

Inventor： Jun-Hee Choi ,  Andrei Zoulkarneev

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J31/12 ,  H01L29/12

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127

Abstract: A field emission device manufactured by the disclosed method and employed in a display unit includes a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter. Electron beams are extracted from the CNT emitter and the extracted electron beams are focused onto a given position. The gate stack includes a mask layer that covers the emitter electrode provided around the CNT emitter, a gate insulating layer and a gate electrode sequentially formed on the mask layer, a focus gate insulating layer having double inclined planes facing the CNT emitter on the gate electrode, and focus gate electrode coated on the focus gate insulating layer.

Abstract translation: 通过所公开的方法制造并用于显示单元的场致发射器件包括玻璃衬底，形成在玻璃衬底上的发射极，形成在发射极上的碳纳米管（CNT）发射体，以及形成在CNT周围的栅叠层 发射器。 从CNT发射器提取电子束，并将提取的电子束聚焦到给定位置。 栅极堆叠包括覆盖围绕CNT发射极设置的发射极的掩模层，顺序形成在掩模层上的栅极绝缘层和栅电极，在栅电极上具有面向CNT发射极的双倾斜面的聚焦栅极绝缘层 ，并且聚焦栅电极涂覆在聚焦栅极绝缘层上。

公开(公告)号：US20050116214A1

公开(公告)日：2005-06-02

申请号：US10974895

申请日：2004-10-27

Applicant: Victor Mammana ,  Gary McGuire ,  Olga Shenderova

Inventor： Victor Mammana ,  Gary McGuire ,  Olga Shenderova

IPC: H01J3/02 ,  H01J9/02 ,  H01L29/06

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  Y10S977/939

Abstract: A field emitter device consistent with certain embodiments has a substantially planar conductor forming a gate electrode. A conductive stripe forms a cathode on the insulating layer. An insulating layer covers at least a portion of the surface between the cathode and the gate. An anode is positioned above the cathode. An emitter structure, for example of carbon nanotubes is disposed on a surface of the cathodes closest to the anode. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract translation: 与某些实施例一致的场发射器件具有形成栅电极的基本上平面的导体。 导电条在绝缘层上形成阴极。 绝缘层覆盖阴极和栅极之间的表面的至少一部分。 阳极位于阴极上方。 例如碳纳米管的发射极结构设置在最靠近阳极的阴极的表面上。 当跨绝缘层产生电场时，阴极/发射极结构具有功函数和纵横比的组合，其导致电子从发射极结构向阳极发射的场强低于引起来自其它辐射的场强 阴极的区域。 该摘要不被认为是限制性的，因为其他实施例可能偏离本摘要中描述的特征。

公开(公告)号：US06882098B2

公开(公告)日：2005-04-19

申请号：US10223625

申请日：2002-08-20

Applicant: Young-Chul Choi ,  Ji-Hoon Ahn ,  Hyek-Bok Rhee ,  Dong-Hee Han

Inventor： Young-Chul Choi ,  Ji-Hoon Ahn ,  Hyek-Bok Rhee ,  Dong-Hee Han

IPC: H01J1/312 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J1/62

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469

Abstract: The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate. The method includes depositing a catalyst metal layer, an insulation layer, and a gate metal layer on a substrate; forming a cavity section by removing a portion of the gate metal layer, the insulation layer, and the catalyst metal layer using a photolithography process; and forming an emitter by mounting the substrate on a chemical vapor deposition reactor and growing carbon nanotubes in a low temperature atmosphere of 500˜800 degrees Celsius (° C.).

Abstract translation: 本发明提供一种冷阴极电子源及其制造方法。 冷阴极电子源包括沉积有催化剂金属层，绝缘层和栅极金属层的基板; 通过催化剂金属层，绝缘层和栅极金属层形成的空腔部分; 以及通过多个碳纳米管实现的发射体，其从暴露在空腔部分中的具有平行于衬底的长轴的催化剂金属层的壁生长。 该方法包括在衬底上沉积催化剂金属层，绝缘层和栅极金属层; 通过使用光刻工艺去除栅极金属层，绝缘层和催化剂金属层的一部分来形成空腔部分; 并通过将基板安装在化学气相沉积反应器上并在500〜800摄氏度（℃）的低温气氛中生长碳纳米管而形成发射体。

公开(公告)号：US20050073261A1

公开(公告)日：2005-04-07

申请号：US10952524

申请日：2004-09-28

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

IPC: H01J9/02 ,  G09G3/10 ,  H01J1/02 ,  H01J1/14 ,  H01J1/30 ,  H01J1/304 ,  H01J1/312 ,  H01J1/32 ,  H01J3/02

CPC classification number: H01J9/022 ,  B82Y10/00 ,  H01J1/312 ,  H01J1/32

Abstract: An electron emitter includes an emitter section having a plate shape, a cathode electrode formed on a front surface of the emitter section, and an anode electrode formed on a back surface of the emitter section. A gap is formed between an outer peripheral portion of the cathode electrode and the front surface of the emitter section. The front surface of the emitter section contacts a lower surface of the outer peripheral portion to form a base end as a triple junction. The gap expands from the base end toward a tip end of the outer peripheral portion.

Abstract translation: 电子发射器包括具有板形的发射极部分，形成在发射极部分的前表面上的阴极电极和形成在发射极部分的后表面上的阳极电极。 在阴极的外周部和发射部的前表面之间形成间隙。 发射器部分的前表面接触外周部分的下表面以形成三端的基端。 间隙从基端向外周部的前端扩展。

公开(公告)号：US06872959B2

公开(公告)日：2005-03-29

申请号：US10638528

申请日：2003-08-12

Applicant: Yasuaki Nishigami

Inventor： Yasuaki Nishigami

IPC: G21G5/00 ,  H01J3/02 ,  H01J37/02 ,  H01J37/06 ,  H01J37/317

CPC classification number: H01J37/06 ,  H01J3/02 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/0044

Abstract: A thermoelectron generating source including a facial main cathode for emitting thermoelectrons by being heated from behind, a filament for heating the main cathode from behind to emit the thermoelectrons, an extraction electrode for extracting the thermoelectrons emitted from the main cathode under an electric field, the extraction electrode being provided near the front of the main cathode, and two deflecting electrodes and disposed on the left and right sides near the front of the extraction electrode to carry the extraction electrode. The potentials of the two deflecting electrodes are kept in a relation VL>VR≧0, where the potential of one deflecting electrode is VL and the potential of the other deflecting electrode is VR.

Abstract translation: 一种热电子发生源，包括通过从后面加热来发射热电子的面部主阴极，用于从后面加热主阴极以发射热电子的灯丝;用于在电场下从主阴极发射的热电子的提取电极， 提供电极设置在主阴极前部附近，以及两个偏转电极，并设置在靠近提取电极前部的左侧和右侧，以承载提取电极。 两个偏转电极的电位保持在VL> VR> = 0的关系中，其中一个偏转电极的电位为VL，另一个偏转电极的电位为VR。