公开(公告)号：US06373352B1

公开(公告)日：2002-04-16

申请号：US09530322

申请日：2000-04-28

申请人： Chang Hwa Lee ,  Meyng Soo Kim ,  Bon Hee Koo ,  Dong Suk Jun ,  Sang Seok Lee ,  Tae Goo Choy

发明人： Chang Hwa Lee ,  Meyng Soo Kim ,  Bon Hee Koo ,  Dong Suk Jun ,  Sang Seok Lee ,  Tae Goo Choy

IPC分类号： H01P512

CPC分类号： H01P1/2136

摘要： A duplexer using a dielectric block and having stepped impedance resonators is disclosed. The duplexer comprising open ended resonators arranged in a front side of the dielectric block, shorted resonators arranged in a rear side of the dielectric block, first grooves for controlling receiving coupling at the receiving filter, second grooves for controlling transmitting coupling at the transmitting filter, and a plurality of recesses formed at the bottom of the dielectric block, extending from a first aperture of the open ended resonators to a second aperture of the shorted resonators. The duplexer according to this invention is miniaturized by excluding external elements and has excellent attenuation characteristics, and is being manufactured by simple processes.

摘要翻译： 公开了一种使用介质块并具有阶梯式阻抗谐振器的双工器。 该双工器包括布置在介质块的前侧的开放式谐振器，布置在介质块的后侧的短路的谐振器，用于控制在接收滤波器处的接收耦合的第一沟槽，用于控制在发射滤波器处的发射耦合的第二沟槽， 以及形成在所述介质块的底部处的多个凹部，从所述开口谐振器的第一孔延伸到所述短路谐振器的第二孔。 根据本发明的双工器通过排除外部元件而小型化并具有优异的衰减特性，并且通过简单的工艺制造。

公开(公告)号：US5886986A

公开(公告)日：1999-03-23

申请号：US840641

申请日：1997-04-25

申请人： Chang-Hwa Lee ,  Meyng-Soo Kim ,  Bon-Hee Koo ,  Dong-Suk Jun ,  Sang-Seok Lee ,  Tae-Goo Choy

发明人： Chang-Hwa Lee ,  Meyng-Soo Kim ,  Bon-Hee Koo ,  Dong-Suk Jun ,  Sang-Seok Lee ,  Tae-Goo Choy

IPC分类号： H04B1/50 ,  H01P1/213

CPC分类号： H01P1/2136

摘要： A duplexer having dual coupled line characteristics is disclosed. With a small number of resonators and without using an external device such as a chip inductor or a chip capacitor, the signals of the receiving frequency can be improvingly damped. The diameters of the transmitting terminal dielectric filter resonators and the receiving terminal dielectric filter resonators are not same, but their diameters at an open terminal and at a short circuit terminal are made different from each other so as to differentiate a coupling amount at the short circuit terminal from that at the open terminal. Further, the transmitting terminal filter resonators and the receiving terminal dielectric filter resonator are provided in a form of grooves, and sizes of the grooves near the open terminal are made different from those of the grooves near the short circuit terminal so as to differentiate a coupling amount of the resonators at the short circuit terminal from those at the open terminal. The duplexer of the present invention is used in the transmission/receiving separate type filter of the mobile communication.

摘要翻译： 公开了具有双耦合线特性的双工器。 使用少量谐振器并且不使用诸如片式电感器或片式电容器的外部装置，接收频率的信号可以被改善地衰减。 发射端介质滤波器谐振器和接收端介质滤波器谐振器的直径不相同，但是它们在开路端子和短路端子处的直径彼此不同，以便在短路时区分耦合量 终端从开放终端。 此外，发送端子滤波器谐振器和接收端介质滤波器谐振器以沟槽的形式设置，并且开口端子附近的槽的尺寸与短路端子附近的槽的尺寸不同，以便使耦合 在短路端子处的谐振器的数量与开路端子处的谐振器的量相同。 本发明的双工器用于移动通信的发送/接收分离型滤波器。

公开(公告)号：US10445778B2

公开(公告)日：2019-10-15

申请号：US14779337

申请日：2014-03-31

申请人： Gwon Young Kim ,  Dong Min Shin ,  Dong Suk Chang ,  Chul Hyun Kim ,  Young Bae You

发明人： Gwon Young Kim ,  Dong Min Shin ,  Dong Suk Chang ,  Chul Hyun Kim ,  Young Bae You

IPC分类号： G06Q30/00 ,  G06Q30/02 ,  H04W76/11 ,  H04W4/80 ,  H04W4/029 ,  H04W8/00 ,  G06Q50/00 ,  H04B5/00

摘要： Disclosed are a system for identifying a user at a close range and an information providing system and method using the same, and more particularly to a close-range user identification system and an information providing system and method using the same, in which at least one user located at a close range visible to a client's naked eyes is searched and identified through a network or close-range communication directing, and opened information of the at least one identified user or a location-based advertisement is given to the at least one searched user.

公开(公告)号：US09833487B2

公开(公告)日：2017-12-05

申请号：US12865995

申请日：2009-02-19

申请人： Dong-Suk Park ,  Myung Chul Yoo ,  Do-Young Choi ,  Hyung In Yang ,  Yong-Hyeon Baek ,  Jeong-Eun Huh ,  Kyoung Soo Kim ,  Yong-Baik Cho ,  In Ho Jung ,  Jong Hyun Hur ,  Jae Dong Lee

发明人： Dong-Suk Park ,  Myung Chul Yoo ,  Do-Young Choi ,  Hyung In Yang ,  Yong-Hyeon Baek ,  Jeong-Eun Huh ,  Kyoung Soo Kim ,  Yong-Baik Cho ,  In Ho Jung ,  Jong Hyun Hur ,  Jae Dong Lee

IPC分类号： A61K36/355 ,  A61K36/8964 ,  A23L33/105

CPC分类号： A61K36/355 ,  A23L33/105 ,  A23V2002/00 ,  A61K36/8964 ,  A61K2300/00 ,  A23V2250/21 ,  A23V2200/306 ,  A23V2200/316

摘要： In some embodiments, a composition for the treatment and inhibition or prevention of arthritic diseases includes an extract of mixed herbs, the mixed herbs including an active ingredient with Lonicera japonica THUNB and Anemarrhena asphodeloides BUNGE.

公开(公告)号：US09397216B2

公开(公告)日：2016-07-19

申请号：US14938172

申请日：2015-11-11

申请人： Dong-Suk Shin ,  Chul-Woong Lee ,  Hoi-Sung Chung ,  Young-Tak Kim ,  Nae-In Lee

发明人： Dong-Suk Shin ,  Chul-Woong Lee ,  Hoi-Sung Chung ,  Young-Tak Kim ,  Nae-In Lee

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/165 ,  H01L29/167

CPC分类号： H01L29/7848 ,  H01L21/02636 ,  H01L21/30604 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0603 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834

摘要： Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

摘要翻译： 提供了包括凹部中的应力器的半导体器件和形成半导体器件的方法。 所述方法可以包括在有源区中形成包含磷的快速蚀刻区域，并且通过使快速蚀刻区域凹陷来在有源区中形成第一沟槽。 所述方法还可以包括通过使用定向蚀刻工艺扩大第一沟槽并在第二沟槽中形成应力源来在有源区域中形成第二沟槽。 第二沟槽可以包括有源区的切口部分。

公开(公告)号：US20160064565A1

公开(公告)日：2016-03-03

申请号：US14938172

申请日：2015-11-11

申请人： Dong-Suk SHIN ,  Chul-Woong LEE ,  Hoi-Sung CHUNG ,  Young-Tak KIM ,  Nae-In LEE

发明人： Dong-Suk SHIN ,  Chul-Woong LEE ,  Hoi-Sung CHUNG ,  Young-Tak KIM ,  Nae-In LEE

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L27/088 ,  H01L29/165

CPC分类号： H01L29/7848 ,  H01L21/02636 ,  H01L21/30604 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0603 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834

摘要： Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

公开(公告)号：US20160035861A1

公开(公告)日：2016-02-04

申请号：US14697266

申请日：2015-04-27

申请人： PAN-KWI PARK ,  DONG-SUK SHIN ,  SEOK-JUN WON ,  WEON-HONG KIM ,  JAE-GON LEE

发明人： PAN-KWI PARK ,  DONG-SUK SHIN ,  SEOK-JUN WON ,  WEON-HONG KIM ,  JAE-GON LEE

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L29/66545 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02332 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834

摘要： In a method of manufacturing a semiconductor device, a dummy gate structure is formed on a substrate. A first spacer layer is formed on the substrate to cover the dummy gate structure. A nitridation process is performed on the first spacer layer. An upper portion of the substrate adjacent to the dummy gate structure is removed to form a trench. An inner wall of the trench is cleaned. An epitaxial layer is formed to fill the trench. The dummy gate structure is replaced with a gate structure.

摘要翻译： 在制造半导体器件的方法中，在基板上形成虚拟栅极结构。 在衬底上形成第一间隔层以覆盖虚拟栅极结构。 在第一间隔层上进行氮化处理。 去除与伪栅极结构相邻的衬底的上部以形成沟槽。 清洁沟槽的内壁。 形成外延层以填充沟槽。 虚拟栅极结构被栅极结构代替。

公开(公告)号：US20150064870A1

公开(公告)日：2015-03-05

申请号：US14534475

申请日：2014-11-06

申请人： Dong-Suk Shin ,  Myung-Sun Kim ,  Seong-Jin Nam ,  Pan-Kwi Park ,  Hoi-Sung Chung ,  Nae-In Lee

发明人： Dong-Suk Shin ,  Myung-Sun Kim ,  Seong-Jin Nam ,  Pan-Kwi Park ,  Hoi-Sung Chung ,  Nae-In Lee

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/161 ,  H01L29/165 ,  H01L21/306 ,  H01L29/16

CPC分类号： H01L27/1104 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/28247 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/45 ,  H01L29/513 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7827 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78696

摘要： In a semiconductor device, a first active region has a first Σ-shape, and the second active region has a second Σ-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.

摘要翻译： 在半导体器件中，第一有源区具有第一和第四形状，第二有源区具有第二“S”形。 当垂直于衬底并将第一栅电极的侧表面通过第一区域的线被定义为第一垂直线时，当垂直于衬底并通过第二栅电极的侧表面的线 在第二区域被定义为第二垂直线时，当第一垂直线和第一沟槽之间的最短距离被定义为第一水平距离时，并且当第二垂直线和第二沟槽之间的最短距离被定义为 第二水平距离，第一水平距离和第二水平距离之间的差等于或小于1nm。

公开(公告)号：US08951853B1

公开(公告)日：2015-02-10

申请号：US12659474

申请日：2010-03-10

申请人： Pan-Kwi Park ,  Dong-Suk Shin ,  Yong-Kuk Jeong ,  Dong-Hyun Roh ,  Ha-Jin Lim

发明人： Pan-Kwi Park ,  Dong-Suk Shin ,  Yong-Kuk Jeong ,  Dong-Hyun Roh ,  Ha-Jin Lim

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843 ,  H01L29/7847

摘要： A method of forming a semiconductor device includes forming a gate electrode and source/drain regions in a semiconductor substrate, forming a first capping nitride layer covering the gate electrode and the source/drain regions, the first capping nitride layer including a Si—H rich SiN layer, annealing the semiconductor substrate having the first capping nitride layer, and removing the first capping nitride layer.

摘要翻译： 形成半导体器件的方法包括在半导体衬底中形成栅电极和源/漏区，形成覆盖栅电极和源/漏区的第一覆盖氮化物层，第一覆盖氮化物层包括富Si-H SiN层，退火具有第一覆盖氮化物层的半导体衬底，以及去除第一覆盖氮化物层。

公开(公告)号：US08932526B2

公开(公告)日：2015-01-13

申请号：US13599192

申请日：2012-08-30

申请人： Jae Ho Kim ,  Ki Hong Kim ,  Eun Gi Min ,  Dong Suk Lee ,  Ji-Yong Park ,  Yong Jun Jee

发明人： Jae Ho Kim ,  Ki Hong Kim ,  Eun Gi Min ,  Dong Suk Lee ,  Ji-Yong Park ,  Yong Jun Jee

IPC分类号： A61L9/00 ,  B60H3/00

CPC分类号： B60H3/0021 ,  B60H2003/0064

摘要： Provided is an apparatus for generating perfume for vehicles, and more particularly, an apparatus for generating perfume for vehicles capable of simplifying a configuration and increasing sealing ability to stably control perfume, by easily controlling a flow of air passing through a first perfume generating part and a second perfume generating part using a single rotating shaft.

摘要翻译： 本发明提供一种车辆用香水生成装置，更具体而言，是容易地控制通过第一香料生成部的空气流动，能够简化配置，提高密封能力，稳定地控制香水的车辆用香水装置， 使用单个旋转轴的第二香水产生部件。