Abstract:
A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film.
Abstract:
A display apparatus includes an object recognizing unit for receiving a plurality of video channels and recognizing at least one object moving in the video channels, a display unit for displaying the plurality of video channels so that at east one of the objects recognized by the object recognizing unit is selectable, and if receiving a selection of an object, to which a user pays attention, displaying the video channel including the attention object as an attention object, considering the selected object as the attention object, a frame in and/or out detecting unit for detecting frame-out of the attention object out of the tracking video, and a video searching unit for searching other video channels using the attention object as a searching key if the frame-out of the attention object is detected and allowing the display unit to display the detected video channel.
Abstract:
A coaxial probe includes a coaxial cable including an electrical conductor extending therethrough and projecting therefrom at an end thereof, a planar waveguide on which the electrical conductor projecting from the coaxial cable is mounted, and a sensor electrically connected to the electrical conductor through the planar waveguide. The planar waveguide may be comprised of a substrate, and a strip line formed on the substrate, the strip line being electrically connected at one end to the sensor and at the other end to the electrical conductor. The sensor may be comprised of a cantilever supported at a distal end thereof on the planar waveguide, and a probe mounted on a free end of the cantilever.
Abstract:
An array of light emitting elements, formed as regions of a second conductive type in a semiconductor layer of a first conductive type, includes at least one emission-altering element provided for the purpose of altering the amount of light emitted by an adjacent light-emitting element. The emission-altering element may be a trench, an opaque member, or a non-emitting region of the second conductive type. Light-emitting elements in the interior of the array can be made to emit the same amount of light as the light-emitting elements at the ends of the array by placing one emission-altering element between at least every second pair of mutually adjacent light-emitting elements. If the array is divided into blocks, the emission-altering elements can also provide electrical isolation between the blocks.
Abstract:
A semiconductor random access memory device has stacked capacitor electrodes and test conductive pieces laid on the same pattern as the stacked capacitor electrodes, and the test conductive pieces are alternately isolated from and connected to a ground line, wherein the test conductive pieces are scanned with an electron beam to see whether or not any one of the conductive pieces generates secondary electrons different in intensity from those radiated from the other conductive pieces for detecting a short-circuit, whereby an analyst investigates the stacked capacitor electrodes for a possible short-circuit.
Abstract:
A surface material is provided with a first adhesive layer formed by applying a first adhesive composed of a soluble self-digesting adhesive to an adhesive surface and a second adhesive layer formed by applying a second adhesive composed of a two-part synthetic resin contact adhesive to the upper surface of the first adhesive layer. A base material is provided with a base material adhesive layer formed by applying a second adhesive composed of a two-part synthetic resin contact adhesive to an adhesive surface, and having a composition of adhering the second adhesive layer of the surface material and the base material adhesive layer of the base material.
Abstract:
An insulating layer is selectively grown on the major surface of a first silicon wafer, and is partially etched away so as to be retracted below the major surface; after the retraction of the insulating layer, the first silicon wafer is bonded to a second silicon wafer, and the major surface of the first silicon wafer is strongly adhered to the major surface of the second silicon wafer, so that the first silicon wafer is hardly separated from the second silicon wafer.
Abstract:
An image encoding/transmitting apparatus and method implemented by applying the vector quantization technology utilizing the differential pulse code modulation system in which an estimated error signal is compared with a threshold value to generate a change or movement detection signal and a differential signal, which are then quantized so as to be transmitted and received wherein the polarity of the differential signal is judged by a polarity judgment circuit, a polarity is assigned to the threshold value based on the judgment value by a polarity adding circuit, the differential signal is corrected depending on the threshold value with the polarity, and the corrected differential signal is quantized so as to be transmitted and received.
Abstract:
Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.
Abstract:
A tag information production apparatus is disclosed which can apply tag information to a main image through a realistic amount of work. A time information acquisition section acquires time information of a main image selected on a working screen, and a key region setting section sets a key region at a position corresponding to a partial region in the main image specified arbitrarily by an operator. An identification information application section applies, to the set key region, region identification information which allows identification between the key region and a peripheral region. A key image production section produces a key image to which time information same as the time information of the main image is applied and in which the region identification information is applied to the key region set through the working screen.