Abstract:
In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
Abstract:
In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
Abstract:
Provided is a method of forming a barrier metal layer of a semiconductor device. In the method, a barrier metal layer is formed on a top surface of a semiconductor substrate and then an electrode layer is formed on the semiconductor substrate. Forming the barrier metal layer includes performing a cyclic process repeatedly at least twice. The cyclic process includes depositing a titanium layer and nitriding the deposited titanium layer.
Abstract:
In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
Abstract:
A method for performing data communication in a mobile communication system is disclosed. The method serves to increase channel efficiency by connecting and releasing channels in accordance with the presence/absence of control and traffic data transmitted during packet data communications. Transmission power and mobile terminal battery power are conserved by controlling outputs of a dedicated control channel and a pilot channel when data transmission is discontinued temporarily during data communications. The mobile communication system includes an active state in which user data is transmitted through a dedicated traffic channel and control messages are transmitted through a dedicated control channel. In accordance with the method, a transition is made from the active state to a first control hold state when there is no control or user data to transmit for a first preset time. In the first control hold state, the dedicated traffic channel is released while the dedicated control channel and a reverse pilot channel are maintained. A transition is made from the first control state to a second control hold state when there is no user or control data to transmit for a second preset time. In the second control hold state, which is a resource save sub-state, the transmission outputs of the dedicated control channel and reverse pilot channel are interrupted to conserve power.
Abstract:
A CDMA communication system provides a dedicated control channel capable of efficiently communicating control messages between a base station and a mobile station. In a dedicated control channel transmission device, a controller determines a frame length of a message to be transmitted and outputs a frame select signal corresponding to the determined frame length. A message generator generates frame data of the message to be transmitted according to the frame select signal. A transmitter spreads the frame data and transmitting the spread frame data through a dedicated control channel. In a dedicated control channel reception device, a despreader despreads a received signal. A first message receiver deinterleaves and decodes the despread signal in a first frame length to output a first message, and detects a first CRC corresponding to the decoded signal. A second message receiver deinterleaves and decodes the despread signal in a second frame length to output a second message, and detects a second CRC corresponding to the decoded signal. A controller selects one of the first and second messages according to first and second CRC detection results.
Abstract:
There are provided a touchscreen device, a method for sensing a touch input, and a method for generating driving signals. The touchscreen device includes: a panel unit including a plurality of first electrodes and a plurality of second electrodes; a driving circuit unit simultaneously applying driving signals to N first electrodes among the first electrodes, where N is a natural number equal to or greater than two; a sensing circuit unit detecting capacitance generated in intersections of the first electrodes and the second electrodes so as to output sensing signals; and an operation unit determining whether a touch has occurred based on the sensing signals.
Abstract:
A mobile terminal including an input unit configured to receive an instruction from a first user to perform a video call communication with at least a second user, a display unit, a voice recognition module configured to recognize input voice statements conducted during the video call communication between the first and second users, and a controller configured to perform the video call communication between the first and second users based on the instruction from the first user, to control the display unit to display images of the first and second users, to detect a voice statement from the first user designating the second user by examining the voice statements recognized by the voice recognition module, and to emphatically display the image of the second user compared with the image of the first user based on the detected voice statement from the first user.
Abstract:
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
Abstract:
An optical data storage medium comprises a super-resolution (SR) layer consisting of thermoelectric material, said SR layer having light absorption, transmittance and reflectance at the wavelength of an incident light and maintaining a crystalline single phase without a structural or chemical change below the melting temperature of the material. SR readout of data from and/or SR writing of data onto the medium is carried out by way of thermoelectrically induced optical changes within a local area of the SR layer under laser irradiation.