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    Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera
    52.
    发明授权
    Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera 有权
    具有光波导的固态图像拾取装置，固态图像拾取装置的制造方法和照相机

    公开(公告)号：US08981275B2

    公开(公告)日：2015-03-17

    申请号：US13181626

    申请日：2011-07-13

    申请人： Yoshinori Toumiya ,  Keiji Tatani ,  Haruhiko Ajisawa ,  Yuji Inoue ,  Tetsuhiro Iwashita ,  Hideaki Kato

    发明人： Yoshinori Toumiya ,  Keiji Tatani ,  Haruhiko Ajisawa ,  Yuji Inoue ,  Tetsuhiro Iwashita ,  Hideaki Kato

    IPC分类号： H01L27/00 ,  G01J1/44 ,  H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14687 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/148

    摘要： A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.

    摘要翻译： 固态图像拾取装置包括：光接收表面上的多个像素，设置在半导体衬底的光接收表面上的光电二极管，同时基于像素分隔，设置在半导体衬底上的信号传输部分， 其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜 覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层， 折射率高于氧化硅。

    SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA
    57.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA 有权
    固态图像拾取装置，制造固态图像拾取装置的方法和相机

    公开(公告)号：US20110248146A1

    公开(公告)日：2011-10-13

    申请号：US13163129

    申请日：2011-06-17

    申请人： Yoshinori Toumiya ,  Keiji Tatani ,  Haruhiko Ajisawa ,  Yuji Inoue ,  Tetsuhiro Iwashita ,  Hideaki Kato

    发明人： Yoshinori Toumiya ,  Keiji Tatani ,  Haruhiko Ajisawa ,  Yuji Inoue ,  Tetsuhiro Iwashita ,  Hideaki Kato

    IPC分类号： H01L27/00 ,  H01L31/18

    CPC分类号： H01L27/14687 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/148

    摘要： A solid-state image pickup device including a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.

    摘要翻译： 一种固态图像拾取装置，包括在受光面上的多个像素，在半导体基板的受光面上配置的光电二极管，同时以像素为基准分割，设置在半导体基板上的信号传送部， 其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜 覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层， 折射率高于氧化硅。

    SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING THE SAME
    58.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING THE SAME 有权
    固态图像拾取装置及其制造方法

    公开(公告)号：US20110033968A1

    公开(公告)日：2011-02-10

    申请号：US12903945

    申请日：2010-10-13

    申请人： Keiji TATANI ,  Hideshi ABE ,  Masanori OHASHI ,  Atsushi MASAGAKI ,  Atsuhiko YAMAMOTO ,  Masakazu FURUKAWA

    发明人： Keiji TATANI ,  Hideshi ABE ,  Masanori OHASHI ,  Atsushi MASAGAKI ,  Atsuhiko YAMAMOTO ,  Masakazu FURUKAWA

    IPC分类号： H01L31/18

    CPC分类号： H01L27/1463 ,  H01L27/14643

    摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

    摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。