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63 条记录 (耗时 0.037 秒)

    Optical comb filter
    52.
    发明授权
    Optical comb filter 失效
    光梳滤波器

    公开(公告)号：US4227208A

    公开(公告)日：1980-10-07

    申请号：US942283

    申请日：1978-09-14

    申请人： Itsuo Takanashi ,  Koichiro Motoyama ,  Tadayoshi Miyoshi ,  Shintaro Nakagaki ,  Sumio Yokokawa ,  Kenichi Miyazaki

    发明人： Itsuo Takanashi ,  Koichiro Motoyama ,  Tadayoshi Miyoshi ,  Shintaro Nakagaki ,  Sumio Yokokawa ,  Kenichi Miyazaki

    IPC分类号： G02B5/20 ,  G02B23/24 ,  G02B27/28 ,  G02B27/46 ,  H04N9/07 ,  H04N9/04

    CPC分类号： H04N9/07 ,  G02B27/283 ,  G02B27/46

    摘要： An optical comb filter has a plurality of optical comb filter elements disposed successively in the advancing direction of light. The optical comb filter characteristics attenuate and remove specific space frequencies which do not have mutual relationships of odd-number multiples and frequencies of the specific space frequencies. At least one phase plate is interposed between neighboring optical comb filter elements in front and rear positions with respect to the light advancing direction. The phase plate converts a light exiting from the front filter element into a light which is divided in the rear filter element into normal light and abnormal light, exiting with mutually equal light quantity. The normal and abnormal light enters, as incident light, the rear filter element.

    摘要翻译： 光梳滤波器具有在光的前进方向上连续设置的多个光梳滤波器元件。 光梳滤波器特性衰减并去除不具有奇数倍和特定空间频率频率的相互关系的特定空间频率。 至少一个相位板相对于光进入方向插在相邻的光梳滤波器元件之间的前后位置。 相位板将从前部滤波器元件射出的光转换为在后部滤波器元件中被分成正常光线和异常光线的光，并以相等的光量退出。 正常和异常光作为入射光进入后过滤元件。

    Solid-state imaging device and fabrication method thereof
    54.
    发明授权
    Solid-state imaging device and fabrication method thereof 有权
    固态成像装置及其制造方法

    公开(公告)号：US08362527B2

    公开(公告)日：2013-01-29

    申请号：US12808757

    申请日：2008-12-08

    申请人： Osamu Matsushima ,  Kenichi Miyazaki

    发明人： Osamu Matsushima ,  Kenichi Miyazaki

    IPC分类号： H01L27/146 ,  H01L31/0232

    CPC分类号： H01L27/14632 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14687 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

    摘要： Provision of a solid-state imaging device of a planarized structure with reduced dark currents, allowing for high sensitivities over a wide wavelength band ranging from visible wavelengths to near-infrared wavelengths, and a fabrication method of the same.There are steps of having circuitry (30) formed on a substrate (10), forming a lower electrode layer (25) on the circuitry (30), patterning the lower electrode layer (25) to separate pixel-wise into a set of segments, forming a compound-semiconductor thin film of chalcopyrite structure (24) over a whole area of element regions, applying a resist layer (27) on the compound-semiconductor thin film (24) to pixel-wise pattern in accordance with the lower electrode layer (25) as a base separated into the set of segments, applying an ion doping over a whole area of element regions, forming element separating regions (34) in the compound-semiconductor thin film (24), removing the resist layer (27) for exposure of surfaces of a set of compound-semiconductor thin films (24) pixel-wise separated by the element separating regions (34), and forming a transparent electrode layer (26) in a planarizing manner over a whole area of element regions.

    摘要翻译： 提供具有减小的暗电流的平坦化结构的固态成像装置，其允许在从可见波长到近红外波长的宽波长带上的高灵敏度及其制造方法。 具有形成在基板（10）上的电路（30）的步骤，在电路（30）上形成下电极层（25），图案化下电极层（25），将其逐像分割成一组段 在元件区域的整个区域上形成黄铜矿结构（24）的化合物半导体薄膜，将化合物半导体薄膜（24）上的抗蚀剂层（27）根据下部电极施加到像素图案 层（25）作为分隔成该组段的基底，在元件区域的整个区域上施加离子掺杂，在化合物半导体薄膜（24）中形成元件分离区域（34），去除抗蚀剂层（27） ），用于曝光由元件分离区域（34）以像素方式隔开的一组化合物半导体薄膜（24）的表面，并且在元件区域的整个区域上以平坦化方式形成透明电极层（26） 。

    Solid state imaging device and fabrication method for the same
    55.
    发明授权
    Solid state imaging device and fabrication method for the same 有权
    固态成像装置及其制造方法相同

    公开(公告)号：US08299510B2

    公开(公告)日：2012-10-30

    申请号：US12525357

    申请日：2008-02-01

    申请人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

    发明人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

    摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit formed on a substrate; and a photoelectric conversion unit including a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

    摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元; 以及光电转换单元，其包括设置在电路单元上的下电极层，放置在下电极层上并用作光吸收层的黄铜矿结构的化合物半导体薄膜和放置在化合物上的光透明电极层 半导体薄膜，其中下电极层，化合物半导体薄膜和光透明电极层在电路单元上依次层叠。

    LID OR CASE FOR SEALED PACKAGE AND METHOD FOR MANUFACTURING THE SAME
    57.
    发明申请
    LID OR CASE FOR SEALED PACKAGE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    用于密封包装的盖子或壳体及其制造方法

    公开(公告)号：US20100006336A1

    公开(公告)日：2010-01-14

    申请号：US12305035

    申请日：2008-05-09

    申请人： Tomohiro Shimada ,  Kenichi Miyazaki

    发明人： Tomohiro Shimada ,  Kenichi Miyazaki

    IPC分类号： H01L23/02 ,  H05K5/00 ,  B23K1/00

    CPC分类号： H01L23/10 ,  H01L21/50 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/166 ,  H01L2924/00

    摘要： The present invention provides a lid or a case for a sealed package, which is provided with a frame-shaped soldering material on its face to be joined, wherein the frame-shaped soldering material is formed of aligned ball-shaped soldering materials having particle sizes of 10 to 300 μm. This lid or case can be manufactured by the steps of: (1) forming a droplet from the soldering material in a molten state; (2) discharging the soldering material which has been formed into the droplet onto the face to be joined of the lid or the case to fix the ball-shaped soldering material on the face; and (3) repeating the steps (1) and (2).

    摘要翻译： 本发明提供一种用于密封包装的盖或壳体，其在其待接合面上设置有框状焊接材料，其中框状焊接材料由具有粒径的对准的球形焊接材料形成 10到300个妈妈。 该盖或壳体可以通过以下步骤制造：（1）以熔融状态从焊料形成液滴; （2）将已经形成为液滴的焊接材料排出到要接合的盖或壳体的表面上以将球形焊接材料固定在表面上; 和（3）重复步骤（1）和（2）。

    Joining method by Au-Sn brazing material
    59.
    发明申请
    Joining method by Au-Sn brazing material 有权
    焊接方法采用Au-Sn钎焊材料

    公开(公告)号：US20050184135A1

    公开(公告)日：2005-08-25

    申请号：US11055945

    申请日：2005-02-11

    申请人： Kenichi Miyazaki

    发明人： Kenichi Miyazaki

    IPC分类号： B23K35/00 ,  B23K35/30 ,  C22C5/02 ,  B23K31/02

    CPC分类号： B23K35/3013 ,  B23K35/001 ,  B23K35/004

    摘要： The present invention provides a method of joining members to be joined by use of an Au—Sn brazing material, in which joining is performed by adjusting the composition and thickness of the Au—Sn brazing material so that the Sn content of the joint after joining is from 20.65 to 23.5 wt %. The invention has been completed on the basis of the discovery that the true eutectic point of this alloy system corresponds to 20.65 wt % Sn. In the invention, as means for adjusting the composition of a resulting joint, it is necessary to appropriately adjust the composition and thickness of a brazing material according to the thickness of a gold plating. In the invention, the relationship between the brazing material thickness and the gold plating thickness is shown when the brazing material to be used has an Sn content of 21 wt % to 25 wt %.

    摘要翻译： 本发明提供一种通过使用Au-Sn钎焊材料将待接合的构件接合的方法，其中通过调节Au-Sn钎焊材料的组成和厚度进行接合，使得接合后的接合体的Sn含量 为20.65〜23.5重量％。 本发明是基于这样的发现，即该合金系统的真正共晶点对应于20.65重量％的Sn。 在本发明中，作为调整所得接头的组成的装置，需要根据镀金的厚度适当地调整钎焊材料的组成和厚度。 在本发明中，当使用的钎焊材料的Sn含量为21重量％〜25重量％时，示出了钎焊材料厚度与镀金厚度之间的关系。