公开(公告)号：US20090097618A1

公开(公告)日：2009-04-16

申请号：US12249559

申请日：2008-10-10

Applicant: Lin Jiang ,  Xinyu Yan

Inventor： Lin Jiang ,  Xinyu Yan

IPC: H05G1/02

CPC classification number: A61B6/04 ,  A61B6/4464

Abstract: An X-ray imaging stand that supports an upright X-ray imaging panel by a column standing vertically through a carriage, includes a bar-like member having a longitudinal bar section that extends from the carriage in the upward direction over the upper end of the X-ray imaging panel and a horizontal bar section that extends from the leading end of the longitudinal bar section in the horizontal direction over the surface of the X-ray imaging panel receiving the X-ray, and a support mechanism that supports the longitudinal bar section of the bar-like member above the carriage such that the angle thereof is variable in plural stages in a plane parallel to the surface of the X-ray imaging panel receiving the X-ray.

Abstract translation: 一种X射线成像支架，其通过竖立在托架上的立柱支撑立式X射线成像面板，该支架包括：一个棒状构件，该杆状构件具有纵向杆部分，该纵向杆部分从托架向上延伸超过 X射线成像面板以及从纵向杆部的前端沿着水平方向从接收X射线的X射线摄像面的表面延伸的水平杆部，以及支撑机构， 在支架上方的棒状构件的截面，使得其角度在与接收X射线的X射线成像面的表面平行的平面中以多级变化。

公开(公告)号：US20080016371A1

公开(公告)日：2008-01-17

申请号：US11773018

申请日：2007-07-03

Applicant: Yuan-Lin Jiang ,  Chia-Yu Wang ,  James Young ,  Chieh-Pin Su ,  Chan-Ping Po ,  Shin-Hsin Change

Inventor： Yuan-Lin Jiang ,  Chia-Yu Wang ,  James Young ,  Chieh-Pin Su ,  Chan-Ping Po ,  Shin-Hsin Change

IPC: G06K9/00

CPC classification number: G06K9/00013 ,  G06F21/32

Abstract: Systems and methods for registering fingerprints, setting a login method for an application, and logging into the application are provided. In the registration phase, the system receives a fingerprint signal, which is assigned to one of the many finger related data. In the phase which sets the login method, the system detects a login-signal, which comprises an identity, a password, and a command to execute the application. The system commands the display of the fingerprint related data and receives a selection message corresponding to one of the finger related data. The system assigns the application, the identity, the password to the selected fingerprint related data. In the login phase, the system receives the fingerprint signal and thereby, retrieves the corresponding application, the identity, and the password as well. The system generates a start signal comprising the identity, the password, and the command to execute the application.

Abstract translation: 提供了用于注册指纹，设置应用程序的登录方法和登录到应用程序的系统和方法。 在注册阶段，系统接收指纹信号，该指纹信号被分配给许多手指相关数据之一。 在设置登录方式的阶段中，系统检测登录信号，包括身份，密码和执行应用程序的命令。 系统命令显示指纹相关数据，并接收与手指相关数据之一相对应的选择消息。 系统将应用程序，身份，密码分配给所选指纹相关数据。 在登录阶段，系统接收指纹信号，从而检索相应的应用程序，身份和密码。 该系统产生包括身份，密码和执行应用程序的命令的启动信号。

公开(公告)号：US06764584B2

公开(公告)日：2004-07-20

申请号：US10274956

申请日：2002-10-22

Applicant: I-Long Chang ,  Yu-Lin Jiang ,  Jer-Yuan Shiu ,  Jiunn-Ren Lin

Inventor： I-Long Chang ,  Yu-Lin Jiang ,  Jer-Yuan Shiu ,  Jiunn-Ren Lin

IPC: B01D6144

CPC classification number: B01J20/2803 ,  B01D61/44 ,  B01J20/06 ,  C01D15/00

Abstract: Two concentration techniques, adsorption and electrodialysis, are combined to enrich lithium ions in brine from a level of several ppm to about 1.5%. At beginning brine is subjected to an adsorption, so that Li content is increased to 1200-1500 ppm, followed by two stages of electrodialysis in series to increase Li ions to about 1.5%. Li depleted solution from the second stage of electrodialysis having a Li content of 1200-1500 ppm is recycled to the first stage of electrodialysis as a feed. Li depleted water from the first stage of electrodialysis is subjected to a residue recovery electrodialysis to form a Li enriched solution of 1200-1500 ppm, which is also recycled to the first stage of electrodialysis as a feed. Li depleted solution from the residue recovery electrodialysis is recycled as a feed of the adsorption, so as to sufficiently recover Li ions from brine.

公开(公告)号：US5351208A

公开(公告)日：1994-09-27

申请号：US874489

申请日：1992-04-27

Applicant: Ching-Lin Jiang

Inventor： Ching-Lin Jiang

IPC: G11C15/04 ,  G11C15/00

CPC classification number: G11C15/04

Abstract: A content addressable memory is provided that includes a memory cell and a first plurality of lines connected directly to the gates of access transistors to this memory cell. These access transistors are further connected to a second plurality of lines. The first and second plurality of lines each perform different functions during read, write, and comparison modes. In another embodiment of the present invention, p-channel transistors are used for a match transistor and its associated pass transistors.

Abstract translation: 提供了一种内容可寻址存储器，其包括存储单元和直接连接到存储单元的存取晶体管的栅极的第一多条线。 这些存取晶体管进一步连接到第二组线。 第一和第二组线在读，写和比较模式下都执行不同的功能。 在本发明的另一个实施例中，p沟道晶体管用于匹配晶体管及其相关联的传输晶体管。

公开(公告)号：US5299156A

公开(公告)日：1994-03-29

申请号：US542689

申请日：1990-06-25

Applicant: Ching-Lin Jiang ,  Clark R. Williams

Inventor： Ching-Lin Jiang ,  Clark R. Williams

IPC: G06F5/06 ,  G11C8/16 ,  G11C11/41 ,  G11C11/412 ,  G11C19/28 ,  G11C11/419

CPC classification number: G11C11/412 ,  G06F5/065 ,  G11C11/41 ,  G11C19/287 ,  G11C8/16

Abstract: A dual storage cell memory includes an array of dual storage cells, each of the dual storage cells containing a first memory cell and a second memory cell. The first and second memory cells are well known six-transistor static memory cells with the addition of transfer circuitry for transferring data directly from the internal data nodes of each of the memory cells to its corresponding complementary memory cell without requiring the use of the enable transistors or the bit lines associated with each of the dual storage cells.

Abstract translation: 双存储单元存储器包括双存储单元的阵列，每个双存储单元包含第一存储单元和第二存储单元。 第一和第二存储器单元是众所周知的六晶体管静态存储单元，其具有用于将数据直接从每个存储器单元的内部数据节点传送到其对应的互补存储器单元的传输电路，而不需要使用使能晶体管 或与每个双存储单元相关联的位线。

公开(公告)号：US5150079A

公开(公告)日：1992-09-22

申请号：US717238

申请日：1991-06-18

Applicant: Clark R. Williams ,  Ching-Lin Jiang

Inventor： Clark R. Williams ,  Ching-Lin Jiang

IPC: H03B5/36

CPC classification number: H03B5/364 ,  H03B2200/0012

Abstract: A low-power crystal-controlled CMOS oscillator wherein a long and wide additional transistor is provided in the first stage of the output amplifier. This prevents the output amplifier from diverting too much current from the primary amplifier stage during start-up.

Abstract translation: 一种低功率晶体控制CMOS振荡器，其中在输出放大器的第一级提供长而宽的附加晶体管。 这可以防止输出放大器在启动期间从初级放大器级转移太多的电流。

公开(公告)号：US4871982A

公开(公告)日：1989-10-03

申请号：US264193

申请日：1988-10-28

Applicant: Clark R. Williams ,  Ching-Lin Jiang

Inventor： Clark R. Williams ,  Ching-Lin Jiang

IPC: H03K3/014 ,  H03K3/354 ,  H03L3/00

CPC classification number: H03B5/30 ,  H03B5/06 ,  H03K3/014 ,  H03K3/3545 ,  H03L3/00

Abstract: A low-power crystal-controlled CMOS oscillator wherein a long and wide additional transistor is provided in the first stage of the output amplifier. This prevents the output amplifier from diverting too much current from the primary amplifier stage during start-up.

Abstract translation: 一种低功率晶体控制CMOS振荡器，其中在输出放大器的第一级提供长而宽的附加晶体管。 这可以防止输出放大器在启动期间从初级放大器级转移太多的电流。

公开(公告)号：US4460978A

公开(公告)日：1984-07-17

申请号：US322915

申请日：1981-11-19

Applicant: Ching-Lin Jiang ,  David L. Taylor

Inventor： Ching-Lin Jiang ,  David L. Taylor

IPC: G11C14/00 ,  G11C11/40

CPC classification number: G11C14/00

Abstract: A nonvolatile static random access memory cell (10) includes a pair of cross-coupled transistors (12, 14) which function as a bistable circuit to store data states. Variable threshold transistors (36, 41) are respectively connected in series between the driver transistors (12, 14) and load devices (48, 50). A control node (40) is driven to a high voltage state to cause one of the variable threshold transistors (36, 41) to be driven to have a higher threshold voltage and thereby store the data state held in the cross-coupled transistors (12, 14). The data state is thus stored in nonvolatile form. Upon recall the memory cell (10) is reactivated and the threshold differential between the variable threshold transistors (36, 41) causes the driver transistors (12, 14) to be set at the stored data state. The data recalled by the memory cell (10) is in true rather than in complementary form. The variable threshold transistors (36, 41) are reset by driving the power terminal V.sub.cc to a high voltage state to reestablish common threshold voltages for the variable threshold voltage transistors (36, 41).

Abstract translation: 非易失性静态随机存取存储单元（10）包括一对交叉耦合晶体管（12,14），其作为双稳态电路来存储数据状态。 可变阈值晶体管（36,41）分别串联连接在驱动晶体管（12,14）和负载装置（48,50）之间。 控制节点（40）被驱动到高电压状态以使可变阈值晶体管（36,41）中的一个被驱动以具有较高的阈值电压，从而存储保持在交叉耦合晶体管（12）中的数据状态 ，14）。 数据状态因此以非易失性形式存储。 一旦召回，存储器单元（10）被重新激活，并且可变阈值晶体管（36,41）之间的阈值差使得驱动晶体管（12,14）被设置在存储的数据状态。 由存储器单元（10）调用的数据是真实的而不是互补形式。 通过将电源端子Vcc驱动到高电压状态来重建可变阈值晶体管（36,41），以重建可变阈值电压晶体管（36,41）的公共阈值电压。

公开(公告)号：US4308594A

公开(公告)日：1981-12-29

申请号：US117223

申请日：1980-01-31

Applicant: Ching-Lin Jiang

Inventor： Ching-Lin Jiang

IPC: G11C11/41 ,  G11C11/34 ,  G11C11/402 ,  G11C11/412 ,  H01L27/108 ,  H01L29/78 ,  H03K3/356 ,  G11C11/40 ,  G11C11/24

CPC classification number: G11C11/412 ,  G11C11/4023 ,  H01L27/108 ,  H03K3/35606 ,  H03K3/356086

Abstract: An integrated circuit memory cell (10) having a bit line (12), a word line (14) and a cell voltage supply (26) is provided. The integrated circuit memory cell (10) includes a first clock line (34) and a second clock line (36). A first transistor (20) is interconnected to the bit line (12) and the word line (14) for providing access to the memory cell (10). A second transistor (22) is interconnected to the cell voltage supply source (26) and to the first transistor (20) thereby defining a first node (S). The second transistor (22) provides a charging path from the cell voltage supply source (26) to the first node (S). A capacitor (30) is provided and interconnects the first clock line (34) and the second transistor (22). The interconnection between the capacitor (30) and the second transistor (22) defines a second node (K). The capacitor (30) provides a coupling path between the first clock line (34) and the second node (K) for conditionally supplying a voltage from the first clock line (34) to the second node (K) to render voltage at the second node (K) higher than the cell voltage supply source (26). A third transistor is provided for the memory cell (10) and is interconnected to the first node (S) and the second node (K) and the second clock line (36). The third transistor (24) provides a charging path between the second clock line (36) and the second node (K) for conditionally maintaining a voltage at the second node (K).

Abstract translation: 提供具有位线（12），字线（14）和单元电压供应（26）的集成电路存储单元（10）。 集成电路存储单元（10）包括第一时钟线（34）和第二时钟线（36）。 第一晶体管（20）互连到位线（12）和字线（14），用于提供对存储单元（10）的访问。 第二晶体管（22）与电池电压源（26）和第一晶体管（20）互连，由此限定第一节点（S）。 第二晶体管（22）提供从单电池电压源（26）到第一节点（S）的充电路径。 提供电容器（30）并将第一时钟线（34）和第二晶体管（22）互连。 电容器（30）和第二晶体管（22）之间的互连限定第二节点（K）。 电容器（30）在第一时钟线（34）和第二节点（K）之间提供耦合路径，用于从第一时钟线（34）向第二节点（K）有条件地提供电压以在第二时钟线 （K）高于电池电压源（26）。 第三晶体管被提供给存储单元（10）并且互连到第一节点（S）和第二节点（K）和第二时钟线（36）。 第三晶体管（24）在第二时钟线（36）和第二节点（K）之间提供充电路径，用于有条件地维持第二节点（K）的电压。

公开(公告)号：US08469589B2

公开(公告)日：2013-06-25

申请号：US12952605

申请日：2010-11-23

Applicant: Lin Jiang

Inventor： Lin Jiang

IPC: H01J31/50

CPC classification number: A61B6/44

Abstract: A rotation mechanism for use with an x-ray wallstand housing includes a rotating shaft, a gas spring, a connecting rod, a ball screw nut seat, a ball screw base, a brake, a clutch, a motor, a conveyor belt, a ball screw and a damper disposed between said ball screw base and said ball screw nut seat.

Abstract translation: 一种用于x射线壁橱壳体的旋转机构包括旋转轴，气弹簧，连杆，滚珠丝杠螺母座，滚珠丝杠座，制动器，离合器，马达，输送带， 滚珠丝杠和设置在所述滚珠丝杠基座和所述滚珠丝杠螺母座之间的阻尼器。