公开(公告)号：US07431857B2

公开(公告)日：2008-10-07

申请号：US10843914

申请日：2004-05-12

Applicant: Steven C. Shannon ,  Alex Paterson ,  Theodoros Panagopoulos ,  John P. Holland ,  Dennis Grimard ,  Yashushi Takakura

Inventor： Steven C. Shannon ,  Alex Paterson ,  Theodoros Panagopoulos ,  John P. Holland ,  Dennis Grimard ,  Yashushi Takakura

IPC: G01R31/00

CPC classification number: H01J37/32082 ,  H01J37/32165 ,  H01J37/32706

Abstract: A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.

Abstract translation: 提供了一种使用双频RF源在半导体衬底处理室中产生和控制等离子体的方法和装置。 该方法包括以第一频率将来自源的第一RF信号提供给处理室内的电极的步骤，并以第二频率将来自源的第二RF信号提供给处理室内的电极。 第二频率与第一频率不等于期望频率的量。 在腔室中形成的等离子体的特性以期望的频率建立护套调制。

公开(公告)号：US20080179181A1

公开(公告)日：2008-07-31

申请号：US11733984

申请日：2007-04-11

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H05H1/00

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.

Abstract translation: 用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率以第一VHF频率f 1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极 工件支撑电极为频率f 1。 该方法还包括提供可变高度边缘接地环形元件，并为频率f 1提供通过边缘接地环形元件的接地返回路径。 该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

公开(公告)号：US20080121345A1

公开(公告)日：2008-05-29

申请号：US11564206

申请日：2006-11-28

Applicant: Steven C. Shannon ,  Masao Drexel ,  James A. Stinnett ,  Ying Rui ,  Ying Xiao ,  Roger A. Lindley ,  Imad Yousif

Inventor： Steven C. Shannon ,  Masao Drexel ,  James A. Stinnett ,  Ying Rui ,  Ying Xiao ,  Roger A. Lindley ,  Imad Yousif

IPC: H01L21/306

CPC classification number: H01J37/3266 ,  H01J37/32082 ,  H01J37/32623

Abstract: A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.

Abstract translation: 本文提供了一种限制等离子体的方法和装置。 在一个实施例中，用于限制等离子体的装置包括基板支撑件和磁场形成装置，用于在至少设置在衬底支架上的第一区域之间形成靠近边界的磁场，其中将形成等离子体，以及 第二区域，其中等离子体将被选择性地限制。 磁场具有垂直于期望等离子体限制的方向的b场分量，其根据用于形成等离子体的工艺条件，选择性地限制等离子体的带电物质从第一区域到第二区域的移动。

公开(公告)号：US07375947B2

公开(公告)日：2008-05-20

申请号：US11672362

申请日：2007-02-07

Applicant: Jang Gyoo Yang ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas H. Burns ,  Wonseok Lee ,  Kwang-Soo Kim

Inventor： Jang Gyoo Yang ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas H. Burns ,  Wonseok Lee ,  Kwang-Soo Kim

IPC: H01L21/283 ,  B23B31/28

CPC classification number: H01J37/32706 ,  H01J37/32935 ,  H01L21/6833 ,  Y10T279/23

Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.

Abstract translation: 在具有静电卡盘的等离子体反应器中，使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量确定晶片电压，并且该晶片电压用于精确地控制DC晶片钳位电压。

公开(公告)号：US20080110567A1

公开(公告)日：2008-05-15

申请号：US11751575

申请日：2007-05-21

Applicant: Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

Inventor： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC: H01L21/306

CPC classification number: H01J37/32633 ,  H01J37/3244 ,  H01J37/32449

Abstract: A plasma reactor with plasma confinement and plasma radial distribution capability. The reactor comprises a reactor chamber including a side wall and a workpiece support pedestal in the chamber and defining a pumping annulus between the pedestal and side wall and a pumping port at a bottom of the pumping annulus. The reactor further comprises a means for confining gas flow in an axial direction through the pumping annulus to prevent plasma from flowing to the pumping port. The reactor further comprises a means for compensating for asymmetry of gas flow pattern across the pedestal arising from placement of the pumping port. The reactor further comprises a means for controlling plasma distribution having an inherent tendency to promote edge-high plasma density distribution. The means for confining gas flow is depressed below the workpiece support sufficiently to compensate for the edge-high plasma distribution tendency of the means for controlling plasma distribution.

Abstract translation: 一种具有等离子体约束和等离子体径向分布能力的等离子体反应器。 该反应器包括反应室，该反应室包括室中的侧壁和工件支撑基座，并且在基座和侧壁之间限定了泵送环形空间以及在泵送环空的底部的泵送端口。 反应器还包括用于将气流沿轴向限制通过泵送环的装置，以防止等离子体流到泵送端口。 所述反应器还包括用于补偿穿过所述基座的由所述泵送端口的放置产生的气流图案的不对称性的装置。 反应器还包括用于控制具有促进边缘 - 高等离子体密度分布的固有倾向的等离子体分布的装置。 用于限制气流的装置在工件支撑下方被压下，足以补偿用于控制等离子体分布的装置的边缘 - 高等离子体分布趋势。

公开(公告)号：US07359177B2

公开(公告)日：2008-04-15

申请号：US11127036

申请日：2005-05-10

Applicant: Jang Gyoo Yang ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas H. Burns ,  Wonseok Lee ,  Kwang-Soo Kim

Inventor： Jang Gyoo Yang ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas H. Burns ,  Wonseok Lee ,  Kwang-Soo Kim

IPC: H01L21/683 ,  H01T23/00 ,  G01L21/30 ,  G01R31/00 ,  H01J7/24 ,  H05B31/26 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32706 ,  H01J37/32935 ,  H01L21/6833 ,  Y10T279/23

Abstract: A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.

Abstract translation: 等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径 电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。 反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和 测量电压和测量电流的第二频率分量分别乘以第三和第四系数。 处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压 并乘以所选系数。

公开(公告)号：US07286948B1

公开(公告)日：2007-10-23

申请号：US11424705

申请日：2006-06-16

Applicant: Steven C. Shannon ,  Daniel J. Hoffman ,  Jeremiah T. P. Pender ,  Tarreg Mawari

Inventor： Steven C. Shannon ,  Daniel J. Hoffman ,  Jeremiah T. P. Pender ,  Tarreg Mawari

IPC: G01R23/16

CPC classification number: H05H1/0081 ,  H01J37/32174 ,  H01J37/32935 ,  H01L21/67005

Abstract: Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.

Abstract translation: 提供了确定等离子体特性的方法。 在一个实施例中，用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性 。 在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。 在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，测量耦合到等离子体并具有至少两个不同频率的波形的电流和电压，以及从模型确定等离子体的离子质量， 测量的电流和电压的波形。

公开(公告)号：US06652712B2

公开(公告)日：2003-11-25

申请号：US10028646

申请日：2001-12-19

Applicant: Shiang-Bau Wang ,  Daniel J. Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  David McParland ,  Matthew L. Miller ,  Douglas A. Buchberger, Jr. ,  Steven C. Shannon

Inventor： Shiang-Bau Wang ,  Daniel J. Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  David McParland ,  Matthew L. Miller ,  Douglas A. Buchberger, Jr. ,  Steven C. Shannon

IPC: C23C1600

CPC classification number: H01J37/321

Abstract: An inductive antenna of a plasma reactor for processing a semiconductor wafer is connected to a radio frequency (RF) power source, and consists of a conductor arranged in successive loops that wind in opposing directions, adjacent pairs of the successive loops having facing portions in which current flow is parallel, the facing portions being sufficiently close to at least nearly share a common current path, whereby to form transitions across the facing portions between opposing magnetic polarizations.

Abstract translation: 用于处理半导体晶片的等离子体反应器的感应天线连接到射频（RF）电源，并且由布置在相反方向上的连续回路中的导体组成，相邻的一对连续的回路具有面对部分 电流流动是平行的，面对部分足够接近至少几乎共享公共电流路径，从而在相对的磁极化之间跨越相对部分形成过渡。

公开(公告)号：US08237517B2

公开(公告)日：2012-08-07

申请号：US13205933

申请日：2011-08-09

Applicant: Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

Inventor： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

IPC: H03H7/38

CPC classification number: H03H7/38

Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

公开(公告)号：US08092605B2

公开(公告)日：2012-01-10

申请号：US11564206

申请日：2006-11-28

Applicant: Steven C. Shannon ,  Masao Drexel ,  James A. Stinnett ,  Ying Rui ,  Ying Xiao ,  Roger A. Lindley ,  Imad Yousif

Inventor： Steven C. Shannon ,  Masao Drexel ,  James A. Stinnett ,  Ying Rui ,  Ying Xiao ,  Roger A. Lindley ,  Imad Yousif

IPC: C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC classification number: H01J37/3266 ,  H01J37/32082 ,  H01J37/32623

Abstract: A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.

Abstract translation: 本文提供了一种限制等离子体的方法和装置。 在一个实施例中，用于限制等离子体的装置包括基板支撑件和磁场形成装置，用于在至少设置在衬底支架上的第一区域之间形成靠近边界的磁场，其中将形成等离子体，以及 第二区域，其中等离子体将被选择性地限制。 磁场具有垂直于期望等离子体限制的方向的b场分量，其根据用于形成等离子体的工艺条件，选择性地限制等离子体的带电物质从第一区域到第二区域的移动。