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    Organic light emitting device and organic electronic device
    51.
    发明申请
    Organic light emitting device and organic electronic device 审中-公开
    有机发光装置和有机电子装置

    公开(公告)号：US20070273280A1

    公开(公告)日：2007-11-29

    申请号：US11730864

    申请日：2007-04-04

    Applicant: Sang-Yeol Kim ,  Jong-Jin Park ,  Lyong-Sun Pu ,  Joon-Yong Park ,  Young-Mok Son ,  Sung-Hun Lee ,  Mu-Gyeom Kim ,  Tae-Woo Lee

    Inventor： Sang-Yeol Kim ,  Jong-Jin Park ,  Lyong-Sun Pu ,  Joon-Yong Park ,  Young-Mok Son ,  Sung-Hun Lee ,  Mu-Gyeom Kim ,  Tae-Woo Lee

    IPC: H05B33/22 ,  H01L51/50

    CPC classification number: H01L51/5237 ,  H01L51/5256

    Abstract: An organic light emitting device has a structure in which the penetration of harmful materials into an inner functional layer is blocked to prevent the degradation of the performance of the organic light emitting device and an organic electronic device includes such an organic light emitting device. The organic light emitting device includes an insulating substrate; a light emitting unit arranged on the insulating substrate and including a first electrode layer to inject holes, a second electrode layer to inject electrons, and an active layer interposed between the first and second electrode layers to emit light by recombining the holes and electrons; and a passivation layer including alternately arranged barrier layers and buffer layers to seal the light emitting unit from an external atmosphere, each barrier layer including at least one material selected from a group consisting of an activated metal oxide, an activated metal nitride, or an activated metal oxynitride, and each buffer layer being of a polymer organic material.

    Abstract translation: 有机发光器件具有阻止有害材料渗入内功能层的结构，以防止有机发光器件性能的劣化，并且有机电子器件包括这样的有机发光器件。 有机发光器件包括绝缘衬底; 发光单元，布置在所述绝缘基板上并且包括用于注入空穴的第一电极层，注入电子的第二电极层和插入在所述第一和第二电极层之间的有源层，以通过重新构成所述空穴和电子而发光; 以及钝化层，包括交替布置的阻挡层和缓冲层，以将发光单元与外部气氛密封，每个阻挡层包括选自活化金属氧化物，活化金属氮化物或活化的金属的至少一种材料 金属氮氧化物，并且每个缓冲层是聚合物有机材料。

    Organic electroluminescent device and its method of manufacture
    52.
    发明申请
    Organic electroluminescent device and its method of manufacture 有权
    有机电致发光器件及其制造方法

    公开(公告)号：US20070252518A1

    公开(公告)日：2007-11-01

    申请号：US11583045

    申请日：2006-10-19

    Applicant: Sung-Hun Lee ,  Joon-Yong Park ,  Sang-Yeol Kim ,  Euk-Che Hwang

    Inventor： Sung-Hun Lee ,  Joon-Yong Park ,  Sang-Yeol Kim ,  Euk-Che Hwang

    IPC: H01J1/62 ,  H01J63/04

    CPC classification number: H01L51/0005 ,  H01L27/3211 ,  H01L27/3283

    Abstract: An organic electroluminescent device includes: a substrate; a plurality of first electrodes arranged on the substrate; a plurality of banks arranged on the substrate and the first electrodes to define pixels on the first electrodes, the plurality of banks being of an inorganic material; a plurality of separators arranged in stripe shapes on the plurality of banks between the pixels, the plurality of separators being of an organic material; organic Emitting Material Layers (organic EMLs), each having a predetermined color, the organic EMLs being arranged within each of the pixels; and a plurality of second electrodes arranged on the organic EMLs, the plurality of banks, and the plurality of separators.

    Abstract translation: 有机电致发光器件包括：衬底; 布置在所述基板上的多个第一电极; 布置在所述基板上的多个堤和所述第一电极以限定所述第一电极上的像素，所述多个堤是无机材料; 多个分离器，其在所述像素之间的所述多个组上排列成条形，所述多个分离器是有机材料; 有机发光材料层（有机EML），各自具有预定的颜色，有机EML被布置在每个像素内; 以及布置在所述有机EML上的多个第二电极，所述多个堤和所述多个隔板。

    Method of forming organic semiconductor layer pattern
    53.
    发明申请
    Method of forming organic semiconductor layer pattern 有权
    形成有机半导体层图案的方法

    公开(公告)号：US20060286314A1

    公开(公告)日：2006-12-21

    申请号：US11453930

    申请日：2006-06-16

    Applicant: Jong-Jin Park ,  Tae-Yong Noh ,  Myeong-Suk Kim ,  Sung-Hun Lee ,  Eun-Jeong Jeong ,  Dong-Woo Shin ,  Lyong-Sun Pu

    Inventor： Jong-Jin Park ,  Tae-Yong Noh ,  Myeong-Suk Kim ,  Sung-Hun Lee ,  Eun-Jeong Jeong ,  Dong-Woo Shin ,  Lyong-Sun Pu

    IPC: B05D5/06 ,  B05D3/02 ,  B29C71/04 ,  B41M5/40 ,  H01L51/00

    CPC classification number: H01L51/0013 ,  H01L27/3244 ,  H01L51/0055

    Abstract: A donor substrate and a method of forming an organic semiconductor layer pattern using the donor substrate, whereby a donor substrate is formed using an organic semiconductor precursor having a thermally decomposable substituent through a wet process, the organic semiconductor precursor substrate in the donor substrate is transferred to a receptor substrate as a pattern and heated, and thus is changed into an organic semiconductor. As a result, an organic semiconductor layer pattern is obtained. The method can be used in the manufacture of various devices such as organic light emitting diode and organic thin film transistor. A low-molecular weight organic semiconductor layer pattern can be formed through a wet process, not through deposition. Thus, using the method, a flat display device can be conveniently manufactured at low cost.

    Abstract translation: 施主衬底和使用施主衬底形成有机半导体层图案的方法，由此通过湿法使用具有可热分解取代基的有机半导体前体形成施主衬底，转移施主衬底中的有机半导体衬底 作为图案的受体底物加热，从而变成有机半导体。 结果，得到有机半导体层图案。 该方法可用于制造有机发光二极管和有机薄膜晶体管等各种器件。 可以通过湿法而不是通过沉积形成低分子量有机半导体层图案。 因此，使用该方法，可以以低成本方便地制造平面显示装置。

    Tray mechanism for disk drive and disk drive using the same
    54.
    发明申请
    Tray mechanism for disk drive and disk drive using the same 失效
    磁盘驱动器和磁盘驱动器的托盘机制使用相同的

    公开(公告)号：US20050198655A1

    公开(公告)日：2005-09-08

    申请号：US11070306

    申请日：2005-03-03

    Applicant: Young-sun Jung ,  Pil-je Cho ,  Kyu-hyeong Lee ,  Chung-ung Kim ,  Sung-hun Lee ,  Young-woo Huh

    Inventor： Young-sun Jung ,  Pil-je Cho ,  Kyu-hyeong Lee ,  Chung-ung Kim ,  Sung-hun Lee ,  Young-woo Huh

    IPC: G11B17/04 ,  G11B17/03

    CPC classification number: G11B17/056

    Abstract: A tray mechanism and a disk drive employing the tray mechanism. The tray mechanism includes a driving member rotatably coupled to a spindle motor; a pinion meshed with a rack provided at a surface of a tray to load the tray onto and unload the tray from a main frame; a pivotable plate pivotally provided at a shaft of the driving member, and having a connector which couples the driving member and the rack; and a limiting member provided on the main frame for limiting a pivotal range of the pivotable plate.

    Abstract translation: 托盘机构和采用托盘机构的盘驱动器。 托盘机构包括可旋转地联接到主轴电机的驱动构件; 与设置在托盘的表面处的齿条啮合的小齿轮以将托盘装载到主框架上并从主框架卸载托盘; 枢转地设置在所述驱动构件的轴上的枢转板，并且具有连接所述驱动构件和所述齿条的连接器; 以及设置在主框架上用于限制可枢转板的枢转范围的限制构件。

    VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    57.
    发明申请
    VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20170179025A1

    公开(公告)日：2017-06-22

    申请号：US15256226

    申请日：2016-09-02

    Applicant: Seok-Jung YUN ,  Sung-Hun LEE ,  Jee-Hoon HAN ,  Yong-Won CHUNG ,  Seong Soon CHO

    Inventor： Seok-Jung YUN ,  Sung-Hun LEE ,  Jee-Hoon HAN ,  Yong-Won CHUNG ,  Seong Soon CHO

    IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L27/115

    Abstract: Vertical memory devices and methods of forming the same are provided. The devices may include a gate line structure including gate lines that are stacked in a first direction and extend in a second direction. The device may also include a first step pattern structure including extended gate lines extending from the gate lines and including first step layers and a second step pattern structure contacting the first step pattern structure, including the extended gate lines and including second step layers. An n-th extended gate line (n is an even number) may be disposed at an upper portion of each of the first step layers, and an (n−1)-th extended gate line may be disposed at an upper portion of each of the second step layers. Each of exposed portions of the (n−1)-th extended gate lines serves as a pad region, and the pad regions have different areas.

    Gate structure including a metal silicide pattern in which an upper surface portion of the metal silicide pattern includes concavo-convex portions and semiconductor devices including the same
    59.
    发明授权
    Gate structure including a metal silicide pattern in which an upper surface portion of the metal silicide pattern includes concavo-convex portions and semiconductor devices including the same 有权
    包括金属硅化物图案的栅极结构，其中金属硅化物图案的上表面部分包括凹凸部分和包括其的半导体器件

    公开(公告)号：US09076682B2

    公开(公告)日：2015-07-07

    申请号：US13299464

    申请日：2011-11-18

    Applicant: Sung-Hun Lee ,  Ki-Yong Kim ,  Sung-Wook Park ,  Gyu-Yeol Lee

    Inventor： Sung-Hun Lee ,  Ki-Yong Kim ,  Sung-Wook Park ,  Gyu-Yeol Lee

    IPC: H01L27/115 ,  H01L21/28 ,  H01L21/8234

    CPC classification number: H01L27/11524 ,  H01L21/28273 ,  H01L21/823437 ,  H01L21/823443 ,  H01L21/823456 ,  H01L27/11529 ,  H01L29/42328 ,  H01L29/495 ,  H01L29/4975 ,  H01L29/788

    Abstract: In a semiconductor device, a first gate structure is provided in a cell transistor region and includes a floating gate electrode, a first dielectric layer pattern, and a control gate electrode including a first metal silicide pattern. A second gate structure is provided in a selecting transistor region and includes a first conductive layer pattern, a second dielectric layer pattern, and a first gate electrode including a second metal silicide pattern. A third gate structure is provided in a peripheral circuit region and includes a second conductive layer pattern, a third dielectric layer pattern including opening portions on the second conductive layer pattern, and a second gate electrode including a concavo-convex portion at an upper surface portion thereof and a third metal silicide pattern. The third metal silicide pattern has a uniform thickness.

    Abstract translation: 在半导体器件中，第一栅极结构设置在单元晶体管区域中，并且包括浮置栅电极，第一介电层图案和包括第一金属硅化物图案的控制栅电极。 第二栅极结构设置在选择晶体管区域中，并且包括第一导电层图案，第二介电层图案和包括第二金属硅化物图案的第一栅电极。 第三栅极结构设置在外围电路区域中，并且包括第二导电层图案，在第二导电层图案上包括开口部分的第三介电层图案，以及在上表面部分包括凹凸部分的第二栅电极 和第三金属硅化物图案。 第三金属硅化物图案具有均匀的厚度。

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