公开(公告)号：US09236105B2

公开(公告)日：2016-01-12

申请号：US14184043

申请日：2014-02-19

Applicant: Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

Inventor： Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/18

Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

Abstract translation: 磁存储器件包括磁阻单元，其包括具有可变磁化方向的自由层和具有固定磁化方向的固定层，磁阻单元上的位线，并且包括具有旋转霍尔效应的旋转霍尔效应材料层， 层; 和位于磁阻电池下方的下电极。 在位线和下电极之间施加电压，使得电流通过磁阻电池。

公开(公告)号：US08559279B2

公开(公告)日：2013-10-15

申请号：US11984478

申请日：2007-11-19

Applicant: Sung-chul Lee ,  Sung-hoon Choa ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Sung-hoon Choa ,  Kwang-seok Kim

IPC: G11B11/00

CPC classification number: G11C11/15 ,  G11C19/0841

Abstract: A data storage device using magnetic domain wall motion may include a first magnetic layer having a plurality of magnetic domains. A second magnetic layer may be connected to the first magnetic layer, and a connection layer may be disposed between the first and second magnetic layers. A resistive magnetic layer may be disposed between each of the first and second magnetic layers and the connection layer. Accordingly, when current is supplied to the data storage device to move a magnetic domain wall, the leakage of current in a connection between the magnetic layers may be reduced or prevented, thus conserving power.

Abstract translation: 使用磁畴壁运动的数据存储装置可以包括具有多个磁畴的第一磁性层。 第二磁性层可以连接到第一磁性层，并且连接层可以设置在第一和第二磁性层之间。 电阻性磁性层可以设置在第一和第二磁性层和连接层中的每一个之间。 因此，当向数据存储装置提供电流以移动磁畴壁时，可以减少或防止磁层之间的连接中的电流泄漏，从而节省功率。

公开(公告)号：US08559255B2

公开(公告)日：2013-10-15

申请号：US13569442

申请日：2012-08-08

Applicant: Sung-Yong Chung ,  Zhizheng Liu ,  Yugi Mizuguchi ,  Xuguang Alan Wang ,  Yi He ,  Ming Kwan ,  Darlene Hamilton ,  Sung-Chul Lee ,  Guowei Wang ,  Nancy Leong

Inventor： Sung-Yong Chung ,  Zhizheng Liu ,  Yugi Mizuguchi ,  Xuguang Alan Wang ,  Yi He ,  Ming Kwan ,  Darlene Hamilton ,  Sung-Chul Lee ,  Guowei Wang ,  Nancy Leong

IPC: G11C7/00

CPC classification number: G11C16/3418 ,  G11C16/0416 ,  G11C16/24 ,  G11C16/3427

Abstract: A system and methodology that can minimize disturbance during an AC operation associated with a memory, such as, program, read and/or erase, is provided. The system pre-charges all or a desired subset of the bit lines in a memory array to a specified voltage, during an AC operation to facilitate reducing AC disturbances between neighboring cells. A pre-charge voltage can be applied to all bit lines in a block in the memory array, or to bit lines associated with a selected memory cell and neighbor memory cells adjacent to the selected memory cell in the block. The system ensures that source and drain voltage levels can be set to desired levels at the same or substantially the same time, while selecting a memory cell. This can facilitate minimizing AC disturbances in the selected memory cell during the AC operation.

Abstract translation: 提供了一种能够在与诸如程序，读取和/或擦除之类的存储器相关联的AC操作期间最小化干扰的系统和方法。 在AC操作期间，系统将存储器阵列中的所有或所需的位线子集预充电到指定的电压，以便于减少相邻单元之间的AC干扰。 可以将预充电电压施加到存储器阵列中的块中的所有位线，或者对与所选择的存储器单元相关联的位线以及与块中所选择的存储单元相邻的相邻存储单元。 该系统确保在选择存储器单元时，源极和漏极电压电平可以在相同或基本相同的时间被设置为期望的电平。 这可以有助于在AC操作期间最小化所选择的存储器单元中的AC干扰。

公开(公告)号：US08541140B2

公开(公告)日：2013-09-24

申请号：US11892676

申请日：2007-08-24

Applicant: Sung-Chul Lee ,  Ju-Yong Kim ,  Sang-Min Jeong ,  Min-Jung Oh ,  Woong-Ho Cho ,  Jae-Woong Choi

Inventor： Sung-Chul Lee ,  Ju-Yong Kim ,  Sang-Min Jeong ,  Min-Jung Oh ,  Woong-Ho Cho ,  Jae-Woong Choi

IPC: H01M8/06 ,  H01M8/04

CPC classification number: H01M8/04089 ,  H01M8/04201 ,  H01M8/0618 ,  Y02P70/56

Abstract: A fuel cell system includes a fuel cell stack, a reformer which generates a reformed gas through a reforming reaction between a gaseous fuel and water and supplies the reformed gas to the fuel cell stack, a fuel tank which compresses the gaseous fuel, stores the compressed fuel in an at least a partially liquid phase, and supplies the gaseous fuel to the reformer, a water tank connected to the fuel tank and the reformer to store water and to supply the water to the reformer by an internal air pressure of the fuel tank, and a first valve installed in a connection line connecting the water tank to the fuel tank to selectively open or close the connection line according to an electrical on/off pulse signal.

Abstract translation: 燃料电池系统包括燃料电池堆，重整器，其通过气体燃料和水之间的重整反应产生重整气体并将重整气体供应到燃料电池堆;压缩气体燃料的燃料箱，将压缩的 燃料在至少部分液相中，并且将气体燃料供应到重整器，连接到燃料箱和重整器的水箱以存储水并且通过燃料箱的内部空气压力将水供应到重整器 以及安装在将水箱连接到燃料箱的连接线中的第一阀，以根据电开/关脉冲信号选择性地打开或关闭连接线。

公开(公告)号：US20130175646A1

公开(公告)日：2013-07-11

申请号：US13549901

申请日：2012-07-16

Applicant: Kwang-seok Kim ,  Sung-chul Lee

Inventor： Kwang-seok Kim ,  Sung-chul Lee

IPC: H01L29/82 ,  G11B5/66 ,  H01F41/14 ,  G11B5/65

CPC classification number: H01L43/02 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/302 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.

公开(公告)号：US08439992B2

公开(公告)日：2013-05-14

申请号：US12700168

申请日：2010-02-04

Applicant: Jin-Goo Ahn ,  Sung-Chul Lee ,  In-Hyuk Son ,  Woo-Cheol Shin ,  In-Seob Song ,  Ju-Yong Kim ,  Yong-Kul Lee ,  Tae-Keun Kim

Inventor： Jin-Goo Ahn ,  Sung-Chul Lee ,  In-Hyuk Son ,  Woo-Cheol Shin ,  In-Seob Song ,  Ju-Yong Kim ,  Yong-Kul Lee ,  Tae-Keun Kim

IPC: B01J7/00 ,  C01B3/36 ,  B01J8/00

CPC classification number: B01J8/0496 ,  B01J8/0453 ,  B01J19/2485 ,  B01J23/42 ,  B01J23/63 ,  B01J35/0006 ,  B01J35/04 ,  B01J2208/00495 ,  B01J2208/0053 ,  B01J2208/00628 ,  C01B3/326 ,  C01B2203/0244 ,  C01B2203/0283 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/1064 ,  C01B2203/107 ,  C01B2203/1217 ,  C01B2203/1223 ,  C01B2203/1229 ,  C01B2203/143 ,  C01B2203/146 ,  C01B2203/169 ,  C01B2203/82 ,  H01M8/0432 ,  H01M8/0618 ,  H01M2008/1095 ,  Y02P20/52

Abstract: An auto ignition type autothermal reformer (ATR) performs reproducible ignition using a catalyst that performs ignition without a separate ignition unit, such as an igniter or heating wire, and a fuel cell system having the ATR. The ATR includes a reaction container having a first opening through which a fuel is introduced into the reaction container and a second opening through which a reformate is discharged from the reaction container, the fuel having a mixture of an aqueous primary fuel solution and hydrogen peroxide; a first catalyst disposed adjacent to the first opening in the reaction container, the first catalyst being a granular catalyst; a second catalyst disposed at the rear portion of the first catalyst to promote an autothermal reforming reaction; and a third catalyst disposed at the rear portion of the second catalyst to promote an oxidation reaction.

Abstract translation: 自动点火型自热重整器（ATR）使用不具有点火器或加热丝等单独点火装置进行点火的催化剂和具有ATR的燃料电池系统，进行可再现点火。 ATR包括具有第一开口的反应容器，通过该第一开口将燃料引入反应容器中，以及第二开口，重整产物从反应容器排出，燃料具有初级燃料溶液和过氧化氢的混合物; 第一催化剂，邻近反应容器中的第一开口设置，第一催化剂为粒状催化剂; 第二催化剂，其设置在第一催化剂的后部以促进自热重整反应; 以及设置在第二催化剂的后部以促进氧化反应的第三催化剂。

公开(公告)号：US08427247B2

公开(公告)日：2013-04-23

申请号：US12801710

申请日：2010-06-22

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

IPC: H03B5/18

CPC classification number: H03B15/006

Abstract: An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.

Abstract translation: 振荡器包括：多个自由层和设置在多个自由层之间的非磁性层。 多个自由层中的每一个具有垂直的磁各向异性或面内磁各向异性。 定期切换自由层的磁化方向，使给定频带内的信号振荡。

公开(公告)号：US08406029B2

公开(公告)日：2013-03-26

申请号：US12658859

申请日：2010-02-16

Applicant: Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

Inventor： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/14 ,  G11C19/0841

Abstract: In a memory device and in a method for controlling a memory device, the memory device comprises a magnetic structure that stores information in a plurality of domains of the magnetic structure. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure. A position detector unit compares the information read by a read current from the read unit from multiple domains of the plurality of domains of the magnetic structure to identify the presence of an expected information pattern at select domains of the plurality of domains.

Abstract translation: 在存储器装置和用于控制存储器件的方法中，存储器件包括将结构存储在磁性结构的多个域中的磁性结构。 读取单元通过向磁性结构施加读取电流来从磁性结构的多个域中的至少一个域读取信息。 位置检测器单元将来自读取单元的读取电流读取的信息与磁性结构的多个域的多个域进行比较，以识别多个域的选定域处的预期信息模式的存在。

公开(公告)号：US08325436B2

公开(公告)日：2012-12-04

申请号：US12155187

申请日：2008-05-30

Applicant: Chang-won Lee ,  Sun-ae Seo ,  Young-Jin Cho ,  Sung-chul Lee

Inventor： Chang-won Lee ,  Sun-ae Seo ,  Young-Jin Cho ,  Sung-chul Lee

IPC: G11B5/02

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: Information storage devices using magnetic domain wall movement, methods of operating the same, and methods of manufacturing the same are provided. An information storage device includes a first magnetic layer, a heating unit and a magnetic field applying unit. The heating unit heats a first region of the first magnetic layer. The magnetic field applying unit applies a magnetic field to the first region to form a magnetic domain. A wall of the magnetic domain is moved by a current applied to the first magnetic layer.

Abstract translation: 提供使用磁畴壁移动的信息存储装置，其操作方法及其制造方法。 信息存储装置包括第一磁性层，加热单元和磁场施加单元。 加热单元加热第一磁性层的第一区域。 磁场施加单元向第一区域施加磁场以形成磁畴。 通过施加到第一磁性层的电流使磁畴的壁移动。

公开(公告)号：US20120257484A1

公开(公告)日：2012-10-11

申请号：US13297713

申请日：2011-11-16

Applicant: Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

Inventor： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

IPC: G11B13/08 ,  G02B6/00

CPC classification number: G11C13/06 ,  G02B5/008 ,  G02F2203/10

Abstract: An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

Abstract translation: 光学元件和包括该元件的信息存储装置。 光学元件可以包括用于将圆偏振光转换成等离子体并传输等离子体的光波导结构。 光波导结构可以发射圆偏振等离子体场。 光学元件可以用在信息存储装置中。 例如，信息存储装置可以包括用于在记录介质上记录信息的记录介质和记录元件，并且记录元件可以包括光学元件。 信息可以通过使用由光学元件产生的圆偏振等离子体场来记录在记录介质上。