公开(公告)号：US20080020289A1

公开(公告)日：2008-01-24

申请号：US11808684

申请日：2007-06-12

申请人： Jun Hatakeyama ,  Takanobu Takeda

发明人： Jun Hatakeyama ,  Takanobu Takeda

IPC分类号： G03F1/00 ,  C08F10/14

CPC分类号： G03F7/0397 ,  C08F12/24 ,  C08F212/14 ,  C08F212/32 ,  C08F220/38 ,  C08F2220/1891 ,  G03F7/0392

摘要： There is disclosed a polymer comprising: at least, a repeating unit of substitutable hydroxy styrene and a repeating unit of substitutable hydroxy vinylnaphthalene which are represented by the following general formula (1). There can be provided a polymer suitable as a base resin of a positive resist composition, in particular, a chemically amplified positive resist composition that can exhibit higher resolution than conventional positive resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; a positive resist composition and a patterning process that use the polymer.

摘要翻译： 公开了一种聚合物，其包括：至少可以由以下通式（1）表示的可取代羟基苯乙烯的重复单元和可取代的羟基乙烯基萘的重复单元。 可以提供适合作为正性抗蚀剂组合物的基础树脂的聚合物，特别是可以表现出比常规正性抗蚀剂组合物更高分辨率的化学放大型正性抗蚀剂组合物的聚合物，其在曝光后提供优异的图案轮廓并且表现出优异的蚀刻 抵抗性; 正性抗蚀剂组合物和使用聚合物的图案化工艺。

公开(公告)号：US20070105042A1

公开(公告)日：2007-05-10

申请号：US11556830

申请日：2006-11-06

申请人： Takanobu TAKEDA ,  Osamu Watanabe ,  Daisuke Manba ,  Tsugio Kaneda

发明人： Takanobu TAKEDA ,  Osamu Watanabe ,  Daisuke Manba ,  Tsugio Kaneda

IPC分类号： G03C1/00

CPC分类号： G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/108

摘要： A hydroxystyrene/indene/alkoxyisobutoxystyrene copolymer having Mw of 1,000-500,000 is formulated as a base resin to give a resist composition, typically chemically amplified positive resist composition. The composition exhibits a high resolution, a satisfactory resist pattern profile after development, and improved etch resistance and is thus suitable as a micropatterning material for the fabrication of VLSI.

摘要翻译： 将Mw为1,000-500,000的羟基苯乙烯/茚/烷氧基异丁氧基苯乙烯共聚物配制成基础树脂，得到抗蚀剂组合物，通常为化学增强的正性抗蚀剂组合物。 该组合物显示出高分辨率，显影后令人满意的抗蚀剂图案轮廓，并且改善了耐蚀刻性，因此适合作为用于制造VLSI的微图案材料。

公开(公告)号：US20050271978A1

公开(公告)日：2005-12-08

申请号：US11142782

申请日：2005-06-02

申请人： Takanobu Takeda ,  Osamu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe

IPC分类号： G03F7/033 ,  C08F4/00 ,  C08F212/14 ,  C08F220/10 ,  G03C1/492 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0397 ,  G03F7/0392

摘要： A polymer is prepared by radical polymerization of a monomer using an organotellurium or organoselenium compound as a polymerization initiator. The polymer has a narrower dispersity Mw/Mn and is adequately random. A resist composition comprising the polymer as a base resin has advantages including a dissolution contrast of resist film, high resolution, exposure latitude, process flexibility, good pattern profile after exposure, and minimized line edge roughness.

摘要翻译： 使用有机碲或有机硒化合物作为聚合引发剂通过单体的自由基聚合来制备聚合物。 聚合物具有较窄的分散性Mw / Mn并且是充分随机的。 包含聚合物作为基础树脂的抗蚀剂组合物具有抗蚀剂膜的溶解对比度，高分辨率，曝光宽容度，工艺柔韧性，曝光后的良好图案轮廓和最小化线边缘粗糙度的优点。

公开(公告)号：US06902772B2

公开(公告)日：2005-06-07

申请号：US10611014

申请日：2003-07-02

申请人： Takanobu Takeda ,  Jun Hatakeyama ,  Toshinobu Ishihara

发明人： Takanobu Takeda ,  Jun Hatakeyama ,  Toshinobu Ishihara

IPC分类号： C08F222/06 ,  C08F230/08 ,  C08F232/08 ,  C08G77/442 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  C08J7/04

CPC分类号： C08F230/08 ,  C08G77/442 ,  G03F7/0395 ,  G03F7/0758

摘要： Silicon-containing polymers comprising recurring units of three components represented by the general formula (1) are novel wherein R1, R2 and R3 are hydrogen or C1-10 alkyl, R4, R5 and R6 are hydrogen, C1-20 alkyl or haloalkyl, or C6-20 aryl, R7 is C4-20 alkyl, n is 1 to 5, p, q and r are positive numbers. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching

摘要翻译： 包含由通式（1）表示的三个组分的重复单元的含硅聚合物是新的，其中R 1，R 2和R 3， 是氢或C 1-10烷基，R 4，R 5和R 6是氢，C 1〜 C 1-20烷基或卤代烷基，或C 6-20芳基，R 7是C 1-4-20烃基， n为1〜5，p，q，r为正数。 包含聚合物的抗蚀剂组合物对高能辐射敏感，并且在小于300nm的波长下具有高灵敏度和分辨率，并改善了对氧等离子体蚀刻的耐受性

公开(公告)号：US06737214B2

公开(公告)日：2004-05-18

申请号：US09800512

申请日：2001-03-08

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Katsuya Takemura ,  Wataru Kusaki ,  Akihiro Seki

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Katsuya Takemura ,  Wataru Kusaki ,  Akihiro Seki

IPC分类号： G03C173

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/115

摘要： A chemical amplification positive resist composition comprising a polymeric mixture of a polyhydroxystyrene derivative having a Mw of 1000-500,000 and a copolymer of hydroxystyrene and (meth)acrylate having a Mw of 1000-500,000, as a base resin, has improved dry etching resistance, high sensitivity, high resolution, and process adaptability, and is suppressed in the slimming of pattern films after development with aqueous base.

摘要翻译： 包含Mw为1000-500,000的聚羟基苯乙烯衍生物和Mw为1000-500,000的羟基苯乙烯和（甲基）丙烯酸酯的共聚物的聚合物混合物作为基础树脂的化学放大正性抗蚀剂组合物具有改善的耐干蚀刻性， 高灵敏度，高分辨率和工艺适应性，并且在用碱性水溶液显影后抑制图案膜的减薄。

公开(公告)号：US6156481A

公开(公告)日：2000-12-05

申请号：US428911

申请日：1999-10-28

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Jun Watanabe ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Toshinobu Ishihara

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Jun Watanabe ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Toshinobu Ishihara

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111

摘要： A hydroxystyrene-(meth)acrylate copolymer in which some phenolic hydroxyl groups are crosslinked with acid labile groups is blended as a base resin in a positive resist composition, which has the advantages of enhanced dissolution inhibition and an increased dissolution contrast after exposure.

摘要翻译： 将一些酚羟基与酸不稳定基团交联的羟基苯乙烯 - （甲基）丙烯酸酯共聚物作为基础树脂掺入正性抗蚀剂组合物中，其具有增强的溶解抑制和暴露后溶解度增加的优点。

公开(公告)号：US20120213993A1

公开(公告)日：2012-08-23

申请号：US13401940

申请日：2012-02-22

申请人： Takanobu TAKEDA ,  Kyoko SOGA ,  Satoshi ASAI

发明人： Takanobu TAKEDA ,  Kyoko SOGA ,  Satoshi ASAI

IPC分类号： B32B7/12 ,  B32B27/38 ,  C09J163/02

CPC分类号： C09J183/06 ,  C08G77/14 ,  C08G77/52 ,  C09J183/14 ,  C09J183/16 ,  Y10T428/287 ,  Y10T428/31518 ,  Y10T428/31663

摘要： An adhesive composition useful in bonding a protective glass with a silicon substrate of a semiconductor device contains (A) an epoxy-containing high-molecular compound and (B) a solvent. The compound (A) has a weight average molecular weight of 3,000 to 500,000 and repeating units represented by the following formula (1): wherein R1 to R4 each represent a monovalent hydrocarbon group, m is 1 to 100, a, b, c and d indicate ratios of respective repeating units based on a number of all repeating units and each stand for 0 or a positive number with a proviso that c and d are not 0 at the same time and 0

摘要翻译： 用于将保护性玻璃与半导体器件的硅衬底接合的粘合剂组合物含有（A）含环氧基的高分子化合物和（B）溶剂。 化合物（A）的重均分子量为3,000〜500,000，由下式（1）表示的重复单元：其中，R1〜R4各自表示一价烃基，m为1〜100，a，b，c， d表示基于全部重复单元数的各重复单元的比率，并且各自表示0或正数，条件是c和d不同时为0，0 <（c + d）/（a + b + c + d）＆nlE; 1.0，X和Y是含酚羟基的二价芳族基团。

公开(公告)号：US08202677B2

公开(公告)日：2012-06-19

申请号：US12457327

申请日：2009-06-08

申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

IPC分类号： G03F7/00 ,  G03F7/04 ,  G03F7/028 ,  G03F7/40

CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/114

摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

公开(公告)号：US20110275768A1

公开(公告)日：2011-11-10

申请号：US13095237

申请日：2011-04-27

申请人： Hiroyuki YASUDA ,  Takato SAKURAI ,  Takanobu TAKEDA ,  Hideto KATO

发明人： Hiroyuki YASUDA ,  Takato SAKURAI ,  Takanobu TAKEDA ,  Hideto KATO

IPC分类号： C08G77/38 ,  C08G77/06

CPC分类号： C08G77/52 ,  C08K5/1515 ,  C08K5/18 ,  C09D183/14

摘要： There is disclosed a silphenylene skeleton-containing silicone type polymer comprising a repeating unit represented by the following general formula (1) and having a weight average molecular weight of 5,000 to 40,000. There can be a novel silphenylene skeleton-containing silicone type polymer which enables to satisfy both chemical resistance and adhesiveness to a substrate and can be used as a material for a thermosetting resin for forming coatings for protecting substrates, circuits, and interconnections; and a method for manufacturing the same.

摘要翻译： 公开了包含由以下通式（1）表示的重均单元，重均分子量为5,000〜40,000的含硅亚
苯基骨架的硅氧烷型聚合物。 可以存在能够满足对基板的耐化学性和粘合性的新型含硅亚苯基骨架的硅氧烷型聚合物，并且可以用作形成用于保护基板，电路和互连的涂层的热固性树脂的材料; 及其制造方法。

公开(公告)号：US07923195B2

公开(公告)日：2011-04-12

申请号：US12320266

申请日：2009-01-22

申请人： Jun Hatakeyama ,  Takanobu Takeda

发明人： Jun Hatakeyama ,  Takanobu Takeda

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115

摘要： The present invention provides a polymer suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance; a positive resist composition using the polymer; and a patterning process.The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).

摘要翻译： 本发明提供了适合作为正型抗蚀剂组合物的基础树脂的聚合物，特别是用于具有高灵敏度，高分辨率，曝光后的良好图案构造的化学增幅正性抗蚀剂组合物的基础树脂，另外还具有优异的蚀刻 抵抗性; 使用该聚合物的正性抗蚀剂组合物; 和图案化过程。 本发明的正型抗蚀剂组合物的特征在于，至少含有作为基础树脂的氢氧化铝基团的氢原子被下述通式（1）表示的酸不稳定基团取代的聚合物。