公开(公告)号：US08481244B2

公开(公告)日：2013-07-09

申请号：US12889730

申请日：2010-09-24

申请人： Takanobu Takeda ,  Hideto Kato

发明人： Takanobu Takeda ,  Hideto Kato

IPC分类号： G03F7/038 ,  G03F7/40 ,  G03F7/075 ,  C08L83/06 ,  C08L83/14 ,  H01L21/312 ,  C09D183/06

CPC分类号： C08L83/06 ,  C08G77/14 ,  C08G77/80 ,  C08L83/14 ,  C09D183/06 ,  C09D183/14 ,  G03F7/0045 ,  G03F7/0757 ,  H01L21/02118 ,  H01L21/312 ,  Y10T428/24802 ,  C08L2666/14

摘要： A photo-curable resin composition comprising an epoxy-containing silphenylene or silicone polymer with a Mw of 3,000-500,000 forms a coating which is useful as a protective film for electric/electronic parts.

摘要翻译： 包含Mw为3,000〜500,000的含环氧基的硅亚烷基或有机硅聚合物的光固化树脂组合物形成可用作电气/电子部件的保护膜的涂层。

公开(公告)号：US08476379B2

公开(公告)日：2013-07-02

申请号：US13095237

申请日：2011-04-27

申请人： Hiroyuki Yasuda ,  Takato Sakurai ,  Takanobu Takeda ,  Hideto Kato

发明人： Hiroyuki Yasuda ,  Takato Sakurai ,  Takanobu Takeda ,  Hideto Kato

IPC分类号： C08F283/12 ,  C08G67/02

CPC分类号： C08G77/52 ,  C08K5/1515 ,  C08K5/18 ,  C09D183/14

摘要： There is disclosed a silphenylene skeleton-containing silicone type polymer comprising a repeating unit represented by the following general formula (1) and having a weight average molecular weight of 5,000 to 40,000. There can be a novel silphenylene skeleton-containing silicone type polymer which enables to satisfy both chemical resistance and adhesiveness to a substrate and can be used as a material for a thermosetting resin for forming coatings for protecting substrates, circuits, and interconnections; and a method for manufacturing the same.

摘要翻译： 公开了包含由以下通式（1）表示的重均单元，重均分子量为5,000〜40,000的含硅亚
苯基骨架的硅氧烷型聚合物。 可以存在能够满足对基板的耐化学性和粘合性的新型含硅亚苯基骨架的硅氧烷型聚合物，并且可以用作形成用于保护基板，电路和互连的涂层的热固性树脂的材料; 及其制造方法。

公开(公告)号：US20120276717A1

公开(公告)日：2012-11-01

申请号：US13406114

申请日：2012-02-27

申请人： Masahiro FURUYA ,  Hiroyuki YASUDA ,  Shohei TAGAMI ,  Michihiro SUGO ,  Hideto KATO

发明人： Masahiro FURUYA ,  Hiroyuki YASUDA ,  Shohei TAGAMI ,  Michihiro SUGO ,  Hideto KATO

IPC分类号： H01L21/30 ,  C09J183/07 ,  C08G77/38 ,  C09J183/04 ,  C08G77/04 ,  C08G77/20

CPC分类号： C08G77/70 ,  C08G77/04 ,  C08G77/50 ,  C08L83/04 ,  C09J183/04 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

摘要： The present invention provides a non-aromatic saturated hydrocarbon group-containing organopolysiloxane containing the following units (I) to (III): (I) a siloxane unit (T unit) represented by R1SiO3/2: 40 to 99 mol %; (II) a siloxane unit (D unit) represented by R2R3SiO2/2: 59 mol % or less; and (III) a siloxane unit (M unit) represented by R4R5R6SiO1/2: 1 to 30 mol %. There can be an organopolysiloxane, which is soluble in a nonpolar organic solvent so that the organopolysiloxane can be peeled in a short time, and which is hardly soluble in a polar organic solvent to be exemplarily used upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom so that the organopolysiloxane is not peeled from the supporting substrate upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom.

摘要翻译： 本发明提供含有以下单元（I）〜（III）的非芳香族饱和烃基有机聚硅氧烷：（I）由R 1 SiO 3/2：40〜99摩尔％表示的硅氧烷单元（T单元） （II）由R2R3SiO2 / 2表示的硅氧烷单元（D单元）：59摩尔％以下; 和（III）由R4R5R6SiO1 / 2表示的硅氧烷单元（M单元）：1〜30摩尔％。 可以是可溶于非极性有机溶剂的有机聚硅氧烷，使得有机聚硅氧烷能够在短时间内被剥离，并且难以溶解在极性有机溶剂中，例如在将光致抗蚀剂涂覆到半导体侧上时被示例性地使用 从而从其上除去光致抗蚀剂，使得在将光致抗蚀剂涂覆在接合的基板的半导体侧上并从中除去光致抗蚀剂时，有机聚硅氧烷不从支撑基板剥离。

公开(公告)号：US20110311788A1

公开(公告)日：2011-12-22

申请号：US13163174

申请日：2011-06-17

申请人： Shohei TAGAMI ,  Takato Sakurai ,  Hideto Kato

发明人： Shohei TAGAMI ,  Takato Sakurai ,  Hideto Kato

IPC分类号： B32B3/10 ,  G03F7/30 ,  G03F7/004

CPC分类号： G03F7/0005 ,  C08G59/306 ,  C08L63/00 ,  C08L2312/06 ,  G03F7/0755 ,  Y10T428/24802 ,  C08L83/04

摘要： Provided is a silphenylene-containing photocurable composition including: (A) a specific silphenylene having both terminals modified with alicyclic epoxy groups, and (C) a photoacid generator that generates acid upon irradiation with light having a wavelength of 240 to 500 nm. Also provided is a pattern formation method including: (i) forming a film of the photocurable composition on a substrate, (ii) exposing the film through a photomask with light having a wavelength of 240 to 500 nm, and if necessary, performing heating following the exposure, and (iii) developing the film in a developing liquid, and if necessary, performing post-curing at a temperature within a range from 120 to 300° C. following the developing. Further provided is an optical semiconductor element obtained by performing pattern formation using the method. The composition is capable of very fine pattern formation across a broad range of wavelengths, and following pattern formation, yields a film that exhibits a high degree of transparency and superior light resistance. The composition may also include: (B) a specific epoxy group-containing organosilicon compound.

摘要翻译： 本发明提供一种含有亚苯基苯的光固化性组合物，其含有：（A）具有两个末端被脂环族环氧基改性的特定的硅亚苯基，（C）光照酸产生剂，其在波长240〜500nm的光照射下产生酸。 还提供了一种图案形成方法，包括：（i）在基板上形成光固化性组合物的膜，（ii）用波长为240〜500nm的光使膜通过光掩模曝光，如果需要，进行加热 曝光，和（iii）在显影液中显影该膜，如有必要，在显影后在120-300℃的温度下进行后固化。 还提供了通过使用该方法进行图案形成而获得的光学半导体元件。 组合物能够在宽波长范围内形成非常精细的图案，并且在图案形成之后，产生显示出高透明度和优异耐光性的膜。 组合物还可以包括：（B）特定的含环氧基的有机硅化合物。

公开(公告)号：US20110136321A1

公开(公告)日：2011-06-09

申请号：US12950308

申请日：2010-11-19

申请人： Yasuyoshi KURODA ,  Kazunori KONDO ,  Hideto KATO

发明人： Yasuyoshi KURODA ,  Kazunori KONDO ,  Hideto KATO

IPC分类号： H01L21/762

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/544 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2224/11003 ,  H01L2224/81001 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01067 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

摘要： Provided is a method for manufacturing a lamination type semiconductor integrated device that can simultaneously attain grinding force resistance during back side grinding of a semiconductor wafer, heat resistance during anisotropic dry etching and the like, chemical resistance during plating and etching, smooth debonding of a support substrate for processing at the end, and low adherend staining; the method comprises at least a step of back side grinding of a first semiconductor wafer having a device formed on its surface and a step of laminating by electrical bonding the first semiconductor wafer with a second semiconductor wafer having a device formed on its surface, wherein, at the time of back side grinding of the first semiconductor wafer, back of the first semiconductor wafer is ground after surface of formed device on the first semiconductor wafer is bonded to a support substrate for processing by using a pressure-sensitive silicone adhesive.

摘要翻译： 本发明提供一种能够同时获得半导体晶片的后侧研磨期间的耐磨性，各向异性干法蚀刻等期间的耐热性，电镀和蚀刻时的耐化学性，支持体的平滑脱粘的层叠型半导体一体化装置的制造方法 底物加工结束，低粘附染色; 所述方法至少包括在其表面上形成有器件的第一半导体晶片的后侧研磨和通过将第一半导体晶片与其表面上形成有器件的第二半导体晶片电接合的步骤， 在第一半导体晶片的背面研磨时，第一半导体晶片的背面在第一半导体晶片上的成形器件的表面通过使用压敏硅胶粘合剂结合到用于处理的支撑衬底上之后被研磨。

公开(公告)号：US20110077374A1

公开(公告)日：2011-03-31

申请号：US12893784

申请日：2010-09-29

申请人： Michihiro SUGO ,  Shohei Tagami ,  Hideto Kato

发明人： Michihiro SUGO ,  Shohei Tagami ,  Hideto Kato

IPC分类号： C08G77/04

CPC分类号： C08G73/106 ,  C08G73/101 ,  C08G73/1039 ,  C08G73/1042 ,  C08G77/455 ,  H05K3/285 ,  H05K2201/0154 ,  H05K2201/0162

摘要： The present invention provides a polyimidesilicone having a primary alcoholic hydroxyl group, which is represented by the following general formula (1): in which k and m are each a positive integer where k and in satisfy a relation a 0.01≦k/(+m)

摘要翻译： 本发明提供具有以下通式（1）表示的具有伯醇羟基的聚酰亚胺：其中k和m各自为正整数，其中k和满足关系a 0.01＆nlE; k /（+ m）<1; X，Y和W如说明书中所定义。

公开(公告)号：US07678874B2

公开(公告)日：2010-03-16

申请号：US11239238

申请日：2005-09-30

申请人： Michihiro Sugo ,  Hideto Kato ,  Tomoyuki Goto

发明人： Michihiro Sugo ,  Hideto Kato ,  Tomoyuki Goto

IPC分类号： C08G73/00

CPC分类号： C08L79/08 ,  C08G73/00 ,  C08G73/10 ,  H05K1/0346 ,  H05K3/281 ,  H05K3/4676 ,  Y10T428/31504 ,  Y10T428/31511 ,  Y10T428/31678 ,  Y10T428/31681

摘要： This invention relates to a novel polyimide silicone having an alcoholic hydroxyl group and a process for the preparation thereof. The polyimide of the invention having a primary alcoholic hydroxyl group is represented by the following general formula (1), wherein X represents a tetravalent organic group, Y represents a divalent group having at least one monovalent group selected from the group consisting of a phenolic hydroxyl group and a carboxyl group, with at least one being a divalent organic group having an alcoholic hydroxyl group, Z represents a divalent organic group, W represents a divalent organic group having an organosiloxane structure, k is a positive number, and each of m and n is equal to 0 (zero) or a positive number, with 0.1≦k/(k+m+n)≦1, 0≦m/(k+m+n)≦0.8, 0≦n/(k+m+n)≦0.8.

摘要翻译： 本发明涉及具有醇羟基的新型聚酰亚胺硅酮及其制备方法。 具有伯醇羟基的本发明的聚酰亚胺由以下通式（1）表示，其中X表示四价有机基团，Y表示具有至少一个选自酚羟基的一价基团的二价基团 基团和羧基，至少一个是具有醇羟基的二价有机基团，Z表示二价有机基团，W表示具有有机硅氧烷结构的二价有机基团，k表示正数，m和 n等于0（零）或正数，其中具有0.1和nlE; k /（k + m + n）＆nlE; 1,0和nlE; m /（k + m + n）＆nlE; 0.8,0和nlE; k + m + n）＆nlE; 0.8。

公开(公告)号：US07214743B2

公开(公告)日：2007-05-08

申请号：US10862633

申请日：2004-06-08

申请人： Jun Hatakeyama ,  Hideto Kato

发明人： Jun Hatakeyama ,  Hideto Kato

IPC分类号： C08F283/00 ,  G03F7/84 ,  G03F7/09 ,  G03F7/038

CPC分类号： G03F7/038 ,  G03F7/0382 ,  G03F7/091 ,  G03F7/094

摘要： There is disclosed a resist lower layer film material for a multilayer-resist film used in lithography which contains a polymer having at least a repeating unit represented by the following general formula (1). There can be provided a resist lower layer film material for a multilayer-resist process, especially for a two-layer resist process, which functions as an excellent antireflection film especially for exposure with a short wavelength, namely has higher transparency, and has the optimal n value and k value, and is excellent in an etching resistance in substrate processing, and a method for forming a pattern on a substrate by lithography using it

摘要翻译： 公开了一种用于光刻中的多层抗蚀剂膜用抗蚀剂下层膜材料，其含有至少具有下述通式（1）表示的重复单元的聚合物。 可以提供用于多层抗蚀剂工艺的抗蚀剂下层膜材料，特别是用于双层抗蚀剂工艺，其特别用于具有较短透明度的曝光（即具有较高透明度）的优异的抗反射膜，并且具有最佳的 n值和k值，并且在基板处理中的耐蚀刻性优异，并且通过使用它的光刻在基板上形成图案的方法

公开(公告)号：US06911292B2

公开(公告)日：2005-06-28

申请号：US10737788

申请日：2003-12-18

申请人： Tomoyoshi Furihata ,  Hideto Kato

发明人： Tomoyoshi Furihata ,  Hideto Kato

IPC分类号： G03F7/022 ,  C08F222/02 ,  C08G8/28 ,  G03F7/023 ,  G03F7/033 ,  G03F7/40 ,  H01L21/027 ,  H05K3/18 ,  H05K3/24 ,  G03F7/30

CPC分类号： G03F7/0233 ,  G03F7/023 ,  G03F7/40 ,  H05K3/184 ,  H05K3/243

摘要： A positive resist composition contains a novolak resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl ester groups, a methyl vinyl ether-monoalkyl maleate copolymer and optionally, an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate. The composition is useful as a thick film photoresist which is subject to a plating step and offers many advantages including high sensitivity, perpendicular geometry, high resolution, and crack resistance during and after the plating step.

摘要翻译： 正型抗蚀剂组合物含有酚醛清漆树脂，其中3〜27摩尔％的羟基氢被1,2-萘醌二叠氮磺酰酯基取代，甲基乙烯基醚 - 单烷基马来酸酯共聚物和任选的碱溶性纤维素，其葡萄糖环 取代基以特定速率被有机基团取代。 该组合物可用作经受电镀步骤的厚膜光致抗蚀剂，并且在电镀步骤期间和之后提供许多优点，包括高灵敏度，垂直几何形状，高分辨率和抗裂纹性。

公开(公告)号：US5914354A

公开(公告)日：1999-06-22

申请号：US909871

申请日：1997-08-12

申请人： Hideto Kato

发明人： Hideto Kato

IPC分类号： C08G73/10 ,  G03F7/037 ,  G03F7/038 ,  G03F7/075 ,  G03F7/38 ,  C08G69/26

CPC分类号： C08G73/106 ,  C08G73/1003 ,  C08G73/1039 ,  G03F7/037 ,  G03F7/0387 ,  G03F7/0757

摘要： A photosensitive resin composition comprising;(A) a polyimide precursor containing an acrylic or methacrylic group;(B) a tertiary amine compound represented by the general formula: ##STR1## wherein R.sup.6 is a monovalent organic group having 3 or less carbon atoms, R.sup.7 is a divalent organic group having 3 or less carbon atoms, and R.sup.8 is a hydrogen atom or a methyl group; and(C) at least one of a photopolymerization initiator and a sensitizer.This composition has a sufficient sensitivity even when thick films are formed, has a superior developability in an aqueous alkali solution, and is suited for the formation of polyimide patterns.

摘要翻译： 一种感光性树脂组合物， （A）含有丙烯酸或甲基丙烯酸基团的聚酰亚胺前体; （B）由以下通式表示的叔胺化合物：其中，R 6为碳原子数3以下的一价有机基团，R 7为碳原子数3以下的二价有机基团，R 8为氢原子或甲基 ; 和（C）光聚合引发剂和敏化剂中的至少一种。 该组合物即使形成厚膜也具有足够的灵敏度，在碱性水溶液中具有优异的显影性，并且适于形成聚酰亚胺图案。