公开(公告)号：US08780304B2

公开(公告)日：2014-07-15

申请号：US13598091

申请日：2012-08-29

申请人： Yong Sung Kim

发明人： Yong Sung Kim

IPC分类号： G02F1/1337

CPC分类号： G02F1/13378 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1396

摘要： A liquid crystal display device has first and second substrates. A first electrode on the first substrate is alignment-treated and a second electrode on the second substrate is alignment-treated. A liquid crystal layer is disposed between the first substrate and the second substrate. Alignment-treating includes forming an alignment direction. The alignment direction of the first and second substrates is formed by irradiating an ion beam onto the first and second electrodes using an ion beam irradiation apparatus.

摘要翻译： 液晶显示装置具有第一和第二基板。 对第一基板上的第一电极进行取向处理，第二基板上的第二电极对准处理。 液晶层设置在第一基板和第二基板之间。 对准处理包括形成取向方向。 使用离子束照射装置，将离子束照射在第一和第二电极上，形成第一和第二基板的取向方向。

公开(公告)号：US08716766B2

公开(公告)日：2014-05-06

申请号：US13523554

申请日：2012-06-14

申请人： Chang-seung Lee ,  Young Bae Kim ,  Young Jun Yun ,  Yong Sung Kim ,  David Seo ,  Joo-ho Lee

发明人： Chang-seung Lee ,  Young Bae Kim ,  Young Jun Yun ,  Yong Sung Kim ,  David Seo ,  Joo-ho Lee

IPC分类号： H01L29/76

CPC分类号： H01L29/7391 ,  B82Y10/00 ,  B82Y40/00 ,  H01L27/2445 ,  H01L27/283 ,  H01L27/3262 ,  H01L29/1606 ,  H01L29/6603 ,  H01L29/66037 ,  H01L29/7781 ,  H01L29/861 ,  H01L33/34 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

摘要： Graphene semiconductor device, a method of manufacturing a graphene semiconductor device, an organic light emitting display and a memory, include forming a multilayered member including a sacrificial substrate, a sacrificial layer, and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate, combining the first laminate and the second laminate such that the semiconductor layer contacts the graphene layer, and removing the transfer substrate.

摘要翻译： 石墨烯半导体器件，石墨烯半导体器件的制造方法，有机发光显示器和存储器，包括形成包括依次沉积的牺牲基板，牺牲层和半导体层的多层元件，在其上形成转印衬底 半导体层，通过去除所述牺牲层以形成包含所述转移衬底和所述半导体层的第一层压体，以将所述牺牲衬底与所述半导体层分离，通过在基底衬底上形成石墨烯层而形成第二层压体，将所述第一层压体和 第二层压体，使得半导体层接触石墨烯层，并且去除转移基板。

公开(公告)号：US08637934B2

公开(公告)日：2014-01-28

申请号：US13899911

申请日：2013-05-22

申请人： Yong-Sung Kim ,  Tae-Young Chung ,  Soo-Ho Shin

发明人： Yong-Sung Kim ,  Tae-Young Chung ,  Soo-Ho Shin

IPC分类号： H01L29/76

CPC分类号： H01L21/28123 ,  H01L21/76224 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/10826 ,  H01L27/10879 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/4238 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7827 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

摘要： A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

摘要翻译： 一种制造半导体器件的方法，该半导体器件能够防止由有源区的长轴与元件隔离层相交的栅电极引起的泄漏电流，并且还具有垂直沟道以提供足够的重叠余量;以及使用上述制造的半导体器件 方法。 该器件包括形成在元件隔离层上的栅电极，它们设置在有源区之间并具有高于有源区顶表面的顶表面。 由于栅电极形成在元件隔离层上，所以防止了半导体衬底中的漏电流。 此外，使用条纹形掩模图案形成栅电极，从而与接触形状或条形图案相比获得足够的重叠余量。

公开(公告)号：US20130193412A1

公开(公告)日：2013-08-01

申请号：US13595580

申请日：2012-08-27

申请人： Chang-seung LEE ,  Joo-ho LEE ,  Yong-sung KIM ,  Jun-seong KIM ,  Chang-youl MOON

发明人： Chang-seung LEE ,  Joo-ho LEE ,  Yong-sung KIM ,  Jun-seong KIM ,  Chang-youl MOON

IPC分类号： H01L29/78 ,  H01L21/336 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L29/1606 ,  H01L21/6835 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/42384 ,  H01L29/66787 ,  H01L29/778 ,  H01L29/7831 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68381

摘要： Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.

摘要翻译： 晶体管及其制造方法可以包括衬底上的栅极，具有覆盖栅极的至少一部分的三维（3D）沟道区域的沟道层，沟道层的第一区域上的源电极，以及 在沟道层的第二区域上方的漏电极。

公开(公告)号：US20130190200A1

公开(公告)日：2013-07-25

申请号：US13704423

申请日：2010-12-08

申请人： Jin Cheon Kim ,  Yong Sung Kim ,  Seon Young Kim ,  Dong Hyung Cho

发明人： Jin Cheon Kim ,  Yong Sung Kim ,  Seon Young Kim ,  Dong Hyung Cho

IPC分类号： C12Q1/68

CPC分类号： C12Q1/6886 ,  C12Q2600/106 ,  C12Q2600/156

摘要： The present invention relates to a single nucleotide polymorphism (SNP) for predicting the sensitivity to an anticancer targeted therapeutic formulation, a polynucleotide containing the same, and a method for predicting the sensitivity to an anticancer targeted therapeutic formulation. According to the present invention, it is possible to predict the sensitivity of each individual to a certain anticancer targeted therapeutic formulation, using a small amount of a sample taken from a patient and thus to select a most suitable targeted therapeutic formulation over the entire duration of treatment for the patient.

摘要翻译： 本发明涉及用于预测对抗癌靶向治疗制剂的敏感性的单核苷酸多态性（SNP），含有该制剂的多核苷酸，以及预测对抗癌靶向治疗剂型的敏感性的方法。 根据本发明，可以使用少量来自患者的样品来预测每个个体对某种抗癌靶向治疗剂型的敏感性，从而在整个持续时间内选择最合适的靶向治疗制剂 治疗病人。

公开(公告)号：US20120296816A1

公开(公告)日：2012-11-22

申请号：US13111127

申请日：2011-05-19

申请人： Jeong Il KIM ,  Yong Sung KIM

发明人： Jeong Il KIM ,  Yong Sung KIM

IPC分类号： G06Q30/00 ,  G06Q40/00

CPC分类号： G06Q20/322 ,  G06Q20/027 ,  G06Q20/14 ,  H04M15/68 ,  H04W4/24

摘要： Disclosed herein is a mobile billing method using an automatic response service (ARS) through call transfer including (a) setting a call between a franchisee server and a mobile terminal according to a request from the franchisee server, (b) receiving a request for call transfer from a billing relay server receiving the request for the call transfer from the franchisee server, performing the call transfer and transmitting an ARS announcement to the mobile terminal, (c) receiving a request for billing from the mobile terminal and requesting authentication and billing from the billing relay server, and (d) receiving a result of the authentication and billing approval from the billing relay server and performing call transfer between the mobile terminal and the franchisee server.

摘要翻译： 本文公开了一种通过呼叫转移使用自动响应服务（ARS）的移动计费方法，包括：（a）根据来自加盟商服务器的请求，在加盟商服务器和移动终端之间设置呼叫，（b）接收呼叫请求 从接收来自加盟商服务器的呼叫转移请求的计费中继服务器传送，执行呼叫转移并向移动终端发送ARS通知，（c）从移动终端接收计费请求，并请求认证和计费 计费中继服务器，以及（d）从计费中继服务器接收认证和计费批准的结果，并在移动终端和特许经营者服务器之间执行呼叫转移。

公开(公告)号：US08039895B2

公开(公告)日：2011-10-18

申请号：US12345415

申请日：2008-12-29

申请人： Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

发明人： Jin-Woo Lee ,  Tae-Young Chung ,  Yong-Sung Kim

IPC分类号： H01L29/76

CPC分类号： H01L29/66659 ,  H01L21/823412 ,  H01L21/823437 ,  H01L21/823487 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888 ,  H01L29/66621 ,  H01L29/7834 ,  H01L29/7835

摘要： According to some embodiments of the invention, transistors have channel regions between channel-portion holes. Methods of forming the same include at least two channel-portion holes disposed in a semiconductor substrate. Line patterns are formed in parallel to be spaced apart from each other on a main surface of the semiconductor substrate to fill the channel-portion holes. A channel region is disposed in the semiconductor substrate below the line patterns. At this time, the channel region is formed between the channel-portion holes and also covers lower portions of the channel-portion holes. Driving current capability and refresh characteristics of DRAMs utilizing the inventive transistors are improved.

摘要翻译： 根据本发明的一些实施例，晶体管在沟道部分孔之间具有沟道区。 形成它们的方法包括设置在半导体衬底中的至少两个通道部分孔。 线图案平行地形成为在半导体衬底的主表面上彼此间隔开以填充沟道部分孔。 沟道区域设置在半导体衬底中的线图案下方。 此时，通道区域形成在通道部分孔之间并且还覆盖通道部分孔的下部。 利用本发明晶体管驱动DRAM的驱动电流能力和刷新特性得到改善。

公开(公告)号：US07921140B2

公开(公告)日：2011-04-05

申请号：US11727107

申请日：2007-03-23

申请人： Yong-sung Kim ,  Tae-ung Jung ,  Dong-seop Kwon ,  Hae-seon Park ,  Kyoung-gu Woo

发明人： Yong-sung Kim ,  Tae-ung Jung ,  Dong-seop Kwon ,  Hae-seon Park ,  Kyoung-gu Woo

IPC分类号： G06F7/00 ,  G06F17/30

CPC分类号： G06F17/30994

摘要： An apparatus and method for browsing contents, the apparatus including: a generation module to generate a key value using metadata of contents as an input value; a management module to manage an index for accessing the key value; and an output module to output a user interface (UI) required to browse the contents using the key value included in a leaf node of the index.

摘要翻译： 一种用于浏览内容的装置和方法，所述装置包括：生成模块，用于使用内容的元数据作为输入值来生成键值; 管理模块，用于管理用于访问密钥值的索引; 以及输出模块，用于输出使用包括在索引的叶节点中的键值来浏览内容所需的用户界面（UI）。

公开(公告)号：US07902607B2

公开(公告)日：2011-03-08

申请号：US12318238

申请日：2008-12-23

申请人： Yong-Sung Kim ,  Tae-Young Chung

发明人： Yong-Sung Kim ,  Tae-Young Chung

IPC分类号： H01L21/331

CPC分类号： H01L29/785 ,  H01L27/1211 ,  H01L29/66795

摘要： Disclosed are methods for forming FinFETs using a first hard mask pattern to define active regions and a second hard mask to protect portions of the insulating regions between active regions. The resulting field insulating structure has three distinct regions distinguished by the vertical offset from a reference plane defined by the surface of the active regions. These three regions will include a lower surface found in the recessed openings resulting from the damascene etch, an intermediate surface and an upper surface on the remaining portions of the lateral field insulating regions. The general correspondence between the reference plane and the intermediate surface will tend to suppress or eliminate residual gate electrode materials from this region during formation of the gate electrodes, thereby improving the electrical isolation between adjacent active regions and improving the performance of the resulting semiconductor devices.

摘要翻译： 公开了使用第一硬掩模图案形成FinFET以限定有源区的方法和用于保护有源区之间绝缘区的部分的第二硬掩模的方法。 所得到的场绝缘结构具有由与活性区域的表面限定的参考平面的垂直偏移区分的三个不同区域。 这三个区域将包括由镶嵌蚀刻产生的凹入开口中的下表面，侧面场绝缘区域的其余部分上的中间表面和上表面。 在形成栅电极期间，参考平面和中间表面之间的一般对应关系将倾向于抑制或消除该区域中的剩余栅电极材料，从而改善相邻有源区之间的电隔离并提高所得半导体器件的性能。

公开(公告)号：US07899260B2

公开(公告)日：2011-03-01

申请号：US11517408

申请日：2006-09-08

申请人： So-hee Jang ,  Yong-sung Kim

发明人： So-hee Jang ,  Yong-sung Kim

IPC分类号： G06K9/36

CPC分类号： H04N19/44 ,  G06F3/147 ,  G09G2340/0407

摘要： A method and apparatus for generating a thumbnail in a size requested by an application at high definition and high speed to browse a digital image are provided. An original image is partially decoded to generate a first thumbnail and the first thumbnail is partially decoded to generate a second thumbnail in a size requested by an application. Accordingly, a digital image is displayed on a full screen using a stored thumbnail instead of decoding an original image, and therefore, a large-capacity high-definition image can be displayed quickly. In addition, to display a thumbnail in various sizes, a small size of the thumbnail is not enlarged but the thumbnail having a size approximate to a full screen size is reduced. Accordingly, degradation of picture quality is decreased.

摘要翻译： 提供一种用于以高清晰度和高速度产生由应用程序请求的大小来浏览数字图像的缩略图的方法和装置。 原始图像被部分解码以产生第一缩略图，并且第一缩略图被部分地解码以生成由应用请求的大小的第二缩略图。 因此，使用存储的缩略图在全屏上显示数字图像而不是对原始图像进行解码，因此可以快速地显示大容量高清晰图像。 此外，为了显示各种尺寸的缩略图，缩略图的小尺寸不被放大，但缩小了具有接近全屏尺寸的尺寸的缩略图。 因此，图像质量的劣化降低。