公开(公告)号：US20240401190A1

公开(公告)日：2024-12-05

申请号：US18673554

申请日：2024-05-24

Applicant: ASM IP Holding B.V.

Inventor： Do Han Kim ,  Jereld Lee Winkler ,  Amit Mishra ,  Paul Ma ,  Todd Robert Dunn ,  Moataz Bellah Mousa

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: Methods for depositing a film on a surface of substrate by cyclical deposition methods including pulsed purge processed are disclosed. The pulsed purge processes include introducing a purge gas into a reaction chamber at a first flow rate, and introducing a purge gas into the reaction chamber at second flow rate, the first flow rate being different to the second flow rate.

公开(公告)号：US20240258154A1

公开(公告)日：2024-08-01

申请号：US18425107

申请日：2024-01-29

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Eric Christopher Stevens ,  Amit Mishra ,  Chad Russell Lunceford ,  Paul Ma

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/3205

CPC classification number: H01L21/68735 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/4585 ,  C23C16/52 ,  H01L21/32051 ,  H01L21/68757 ,  H01L21/68764

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor plate and a susceptor attachment. The susceptor attachment can comprise a ramp region and a conductance control region above and exterior to the ramp region. Methods, systems, and assemblies can be used to obtain desired (e.g., composition and/or thickness) profiles of material on a substrate surface.

公开(公告)号：US20240191352A1

公开(公告)日：2024-06-13

申请号：US18530321

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Jacqueline Wrench ,  Paul Ma ,  Todd Robert Dunn ,  Jonathan Bakke ,  Eric James Shero ,  Shuaidi Zhang ,  Shubham Garg ,  YoungChol Byun

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4485 ,  C23C16/45561

Abstract: Various embodiments of the present technology may provide a first vessel to contain a slurry of a solid precursor powder and an inert liquid, a second vessel to receive the slurry, evaporate the inert liquid, and sublimate the solid precursor powder a first time to form a vapor, a third vessel to recondense the vapor back into a solid state and sublimate the solid precursor a second time to form a vapor, and a reaction chamber to receive the vapor from the third vessel.

公开(公告)号：US20240133033A1

公开(公告)日：2024-04-25

申请号：US18403024

申请日：2024-01-03

Applicant: ASM IP Holding B.V.

Inventor： Jacqueline Wrench ,  Shuaidi Zhang ,  Arjav Prafulkumar Vashi ,  Shubham Garg ,  Todd Robert Dunn ,  Moataz Bellah Mousa ,  Jonathan Bakke ,  Ibrahim Mohamed ,  Paul Ma ,  Bo Wang ,  Eric Shero ,  Jereld Lee Winkler

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45561 ,  C23C16/52

Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

公开(公告)号：US11891693B2

公开(公告)日：2024-02-06

申请号：US16990822

申请日：2020-08-11

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler ,  Cheuk Li ,  Michael F. Schultz ,  John Kevin Shugrue

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  H01L21/67017

Abstract: A semiconductor processing device can include a reactor assembly comprising a reaction chamber sized to receive a substrate therein. An exhaust line can be in fluid communication with the reaction chamber, the exhaust line configured to transfer gas out of the reaction chamber. A valve can be disposed along the exhaust line to regulate the flow of the gas along the exhaust line. A control system can be configured to operate in an open loop control mode to control the operation of the valve.

公开(公告)号：US20230183863A1

公开(公告)日：2023-06-15

申请号：US18079247

申请日：2022-12-12

Applicant: ASM IP Holding B.V.

Inventor： Shreyans Kedia ,  Dinkar Nandwana ,  Kyle Fondurulia ,  Todd Robert Dunn ,  Jereld Lee Winkler

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/45561 ,  C23C16/45565

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold comprising heater blocks with heater elements mounted on a manifold body. Advantageously, the heater blocks are detachably mounted for easy replacement.

公开(公告)号：US11492701B2

公开(公告)日：2022-11-08

申请号：US16813527

申请日：2020-03-09

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Jereld Lee Winkler ,  Eric James Shero ,  Todd Robert Dunn ,  Carl Louis White

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/455 ,  C23C16/54

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

公开(公告)号：US20220277937A1

公开(公告)日：2022-09-01

申请号：US17744902

申请日：2022-05-16

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/32

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

公开(公告)号：US20220254628A1

公开(公告)日：2022-08-11

申请号：US17666681

申请日：2022-02-08

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Glen Wilk ,  Jereld Lee Winkler

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/46 ,  C23C16/455

Abstract: Methods for depositing boron nitride on a surface of a substrate are provided. Exemplary methods include providing a boron precursor comprising a boron-halogen compound comprising one or more of iodine and bromine to a reaction chamber and providing a nitrogen precursor comprising a substituted hydrazine compound to the reaction chamber.

公开(公告)号：US20210118668A1

公开(公告)日：2021-04-22

申请号：US17074887

申请日：2020-10-20

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Eric James Shero ,  Carl Louis White ,  Todd Robert Dunn ,  William George Petro ,  Jereld Lee Winkler ,  Aniket Chitale

IPC: H01L21/02 ,  C23C16/455

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.