公开(公告)号：US11286558B2

公开(公告)日：2022-03-29

申请号：US16992806

申请日：2020-08-13

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  H01L27/108 ,  G11C5/06

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US20220068634A1

公开(公告)日：2022-03-03

申请号：US17407839

申请日：2021-08-20

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  H01L21/285 ,  B08B3/08 ,  B08B5/00 ,  C23C16/02 ,  C11D11/00 ,  C11D7/26 ,  C11D7/24 ,  C11D7/02

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US20210335612A1

公开(公告)日：2021-10-28

申请号：US17235985

申请日：2021-04-21

Applicant: ASM IP Holding B.V

Inventor： Petro Deminskyi ,  Charles Dezelah ,  Jiyeon Kim ,  Giuseppe Alessio Verni ,  Maart Van Druenen ,  Qi Xie ,  Petri Räisänen

IPC: H01L21/28 ,  H01L29/49 ,  C23C16/38 ,  C23C16/455 ,  C23C16/50

Abstract: Methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process. The deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. Exemplary structures can include field effect transistor structures, such as gate all around structures. The layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US20210327715A1

公开(公告)日：2021-10-21

申请号：US17227621

申请日：2021-04-12

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Eric James Shero ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Petri Raisanen

IPC: H01L21/28 ,  H01L29/49 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

Abstract: Methods and systems for depositing chromium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process, depositing a chromium nitride layer onto a surface of the substrate. The deposition process can include providing a chromium precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The deposition process may be a thermal cyclical deposition process.

公开(公告)号：US20210301394A1

公开(公告)日：2021-09-30

申请号：US17216249

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/40 ,  B01J31/12 ,  C23C16/455

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

公开(公告)号：US20210242011A1

公开(公告)日：2021-08-05

申请号：US17162279

申请日：2021-01-29

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Michael Eugene Givens ,  Qi Xie ,  Charles Dezelah ,  Giuseppe Alessio Verni

IPC: H01L21/02 ,  H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66

Abstract: Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US20210180184A1

公开(公告)日：2021-06-17

申请号：US17113242

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Qi Xie ,  Henri Jussila ,  Charles Dezelah ,  Jiyeon Kim ,  Eric James Shero ,  Paul Ma

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L29/43

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.