公开(公告)号：US20190252196A1

公开(公告)日：2019-08-15

申请号：US16396475

申请日：2019-04-26

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L21/768 ,  C23C16/04

CPC classification number: H01L21/28556 ,  C23C16/045 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76873 ,  H01L21/76879

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US20190249300A1

公开(公告)日：2019-08-15

申请号：US15897578

申请日：2018-02-15

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L21/285 ,  H01L23/532 ,  C23C16/40

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

公开(公告)号：US20190071775A1

公开(公告)日：2019-03-07

申请号：US16178199

申请日：2018-11-01

Applicant: ASM IP Holding B.V.

Inventor： Maarit Mäkelä ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/18

Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

公开(公告)号：US20180155832A1

公开(公告)日：2018-06-07

申请号：US15827988

申请日：2017-11-30

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45534 ,  C23C16/06 ,  C23C16/08 ,  C23C16/305 ,  C23C16/34 ,  C23C16/45553

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US20180087154A1

公开(公告)日：2018-03-29

申请号：US15820188

申请日：2017-11-21

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L45/00 ,  C23C16/18 ,  H01L21/02 ,  C23C16/30 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US09909211B2

公开(公告)日：2018-03-06

申请号：US15186249

申请日：2016-06-17

Applicant: ASM IP Holding B.V.

Inventor： Miia Mäntymäki ,  Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/08 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/30 ,  C23C16/45534

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

公开(公告)号：US20160369397A1

公开(公告)日：2016-12-22

申请号：US15186249

申请日：2016-06-17

Applicant: ASM IP Holding B.V.

Inventor： Miia Mäntymäki ,  Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/08

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/30 ,  C23C16/45534

Abstract: A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

Abstract translation: 一种用于在反应室中的基底上形成薄膜的气相沉积工艺，其中所述方法包括使基底与氟化物前体接触。 该方法导致形成氟化锂薄膜。

公开(公告)号：US12119220B2

公开(公告)日：2024-10-15

申请号：US18079160

申请日：2022-12-12

Applicant: ASM IP Holding B.V.

Inventor： Leo Salmi ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  H01L21/762

CPC classification number: H01L21/02203 ,  H01L21/02227 ,  H01L21/0228 ,  H01L21/76224 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02205

Abstract: A method for filling a gap feature on a substrate surface is disclosed. The method may include: providing a substrate comprising a non-planar surface including one or more gap features; depositing a metal oxide film over a surface of the one or more gap features by a cyclical deposition process; contacting the metal oxide with an organic ligand vapor; and converting at least a portion of the metal oxide film to a porous material thereby filling the one or more gap features. Semiconductor structures including a metal-organic framework material formed by the methods of the disclosure are also disclosed.

公开(公告)号：US20240279805A1

公开(公告)日：2024-08-22

申请号：US18438612

申请日：2024-02-12

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/4408

Abstract: The present disclosure relates to methods and apparatuses for depositing noble metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a noble metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form noble metal-containing material on the substrate. The noble metal precursor according to the disclosure comprises a noble metal halide compound comprising an organic phosphine adduct ligand.

公开(公告)号：US11952658B2

公开(公告)日：2024-04-09

申请号：US17971684

申请日：2022-10-24

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/08 ,  C23C16/45531 ,  C23C16/45546 ,  C23C16/45553

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.