公开(公告)号：US08183668B2

公开(公告)日：2012-05-22

申请号：US12788455

申请日：2010-05-27

申请人： Akihiro Hachigo

发明人： Akihiro Hachigo

IPC分类号： H01L29/20

CPC分类号： C30B33/00 ,  C30B29/406

摘要： A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2.

摘要翻译： 一种氮化镓衬底，其包括主表面，所述主表面相对于所述衬底的C面以20至160度的范围倾斜，并且所述基板具有大于或等于1.36的断裂韧性 MN / m3 / 2。

公开(公告)号：US20110315997A1

公开(公告)日：2011-12-29

申请号：US13147806

申请日：2009-11-13

申请人： Akihiro Hachigo

发明人： Akihiro Hachigo

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/76254

摘要： The present invention makes available a GaN substrate, and a method of its manufacture, that, with minimal machining allowances, facilitates consistent machining, and makes available a method of manufacturing a GaN layer-bonded substrate, and a semiconductor device, utilizing the GaN substrate. A GaN substrate (20) of the present invention includes a first region (20j) and a second region (20i) that has a higher Ga/N atomic ratio than that of the first region (20j); wherein the second region (20i) widens from a depth D−ΔD to a depth D+ΔD centered about a predetermined depth D from one major surface (20m), the difference between the Ga/N atomic ratio at the depth D and the Ga/N atomic ratio at a depth D+4ΔD or greater in the first region (20j) at the depth being three times the difference between the Ga/N atomic ratio at the depth D+ΔD and the Ga/N atomic ratio at the depth D+4ΔD or greater in the first region (20j), and wherein the ratio of the Ga/N atomic ratio in the second region (20i) to the Ga/N atomic ratio at the depth D+4ΔD or greater in the first region (20j) is at least 1.05.

摘要翻译： 本发明提供了一种GaN衬底及其制造方法，其具有最小的加工余量，有助于一致的机械加工，并且提供了利用GaN衬底的GaN层结合衬底和半导体器件的制造方法 。 本发明的GaN衬底（20）包括具有比第一区域（20j）高的Ga / N原子比的第一区域（20j）和第二区域（20i）。 其中所述第二区域（20i）从深度D-＆Dgr; D变宽到从一个主表面（20m）围绕预定深度D居中的深度D +＆Dgr; D，深度处的Ga / N原子比之间的差 D和在深度处的第一区域（20j）中深度D + 4＆Dgr; D或更大的Ga / N原子比是在深度D +＆Dgr; D的Ga / N原子比之间的差的三倍 在第一区域（20j）中深度D + 4＆Dgr; D或更大的Ga / N原子比，并且其中第二区域（20i）中的Ga / N原子比与Ga / N原子比 第一区域（20j）中的深度D + 4＆Dgr; D或更大，至少为1.05。

公开(公告)号：US07554175B2

公开(公告)日：2009-06-30

申请号：US11686364

申请日：2007-03-15

申请人： Akihiro Hachigo

发明人： Akihiro Hachigo

IPC分类号： H01L21/304 ,  H01L21/302 ,  H01L27/06

CPC分类号： H01L21/02005 ,  C30B29/406 ,  C30B33/08 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S438/959 ,  H01L2924/00

摘要： Fracture-resistant gallium nitride substrate, and methods of testing for and manufacturing such substrates are made available. A gallium nitride substrate (10) is provided with a front side (12) polished to a mirrorlike finish, a back side (14) on the substrate side that is the opposite of the front side (12). A damaged layer (16) whose thickness d is 30 μm or less is formed on the back side (14). Given that the strength of the front side (12) is I1 and the strength of the back side (14) is I2, then the ratio I2/I1 is 0.46 or more.

摘要翻译： 耐破坏氮化镓衬底，以及测试和制造这种衬底的方法是可用的。 氮化镓衬底（10）设置有抛光到镜面光洁度的前侧（12），在衬底侧的与前侧（12）相反的背面（14）。 在背面（14）上形成厚度d为30μm以下的受损层（16）。 假设前侧（12）的强度为I1，背面（14）的强度为I2，则I2 / I1的比值为0.46以上。

公开(公告)号：US06713941B2

公开(公告)日：2004-03-30

申请号：US10204454

申请日：2002-08-21

申请人： Katsuhiro Itakura ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Satoshi Fujii ,  Shinichi Shikata

发明人： Katsuhiro Itakura ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Satoshi Fujii ,  Shinichi Shikata

IPC分类号： H03H925

CPC分类号： H03H9/02582

摘要： A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=3·2&pgr;·(tz/&lgr;) and kh2=3·2&pgr;·(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.

摘要翻译： 一种适用于大规模生产且在超高频范围内具有出色的运行性能的表面声波（SAW）器件。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定 ，其方程式为kh1 = 3.2pi（tz /λ）和kh2 = 3.2pi（ts / lambda），其中λ表示SAW的第二Sezawa模式的基波的波长。 SAW器件使用SAW激励的第二Sezawa模式的三次谐波。

公开(公告)号：US5750243A

公开(公告)日：1998-05-12

申请号：US521382

申请日：1995-06-16

申请人： Shin-ichi Shikata ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo

发明人： Shin-ichi Shikata ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo

IPC分类号： H03H3/08 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/6436 ,  H03H3/08 ,  H03H9/02582 ,  H03H9/6433 ,  H03H9/6466 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.

公开(公告)号：US5501909A

公开(公告)日：1996-03-26

申请号：US196609

申请日：1994-02-15

申请人： Kenjiro Higaki ,  Hideaki Nakahata ,  Akihiro Hachigo ,  Shinichi Shikata

发明人： Kenjiro Higaki ,  Hideaki Nakahata ,  Akihiro Hachigo ,  Shinichi Shikata

IPC分类号： C23C16/27 ,  C23C16/56 ,  H03H9/02 ,  C30B25/04

CPC分类号： C23C16/56 ,  C23C16/27 ,  H03H9/02582 ,  Y10T428/24273 ,  Y10T428/24479 ,  Y10T428/30

摘要： A diamond substrate having a smooth surface, including a polycrystalline diamond film having a surface with a pit, and an insulating material other than diamond, which occupies the pit.

摘要翻译： 具有光滑表面的金刚石基底，包括具有凹坑的表面的多晶金刚石薄膜和占据凹坑的除金刚石之外的绝缘材料。

公开(公告)号：US5497726A

公开(公告)日：1996-03-12

申请号：US240826

申请日：1994-05-11

申请人： Shinichi Shikata ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Kenjiro Higaki

发明人： Shinichi Shikata ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Kenjiro Higaki

IPC分类号： H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  C30B23/04 ,  C30B29/02 ,  C30B29/04

CPC分类号： H03H9/02582 ,  H03H3/08

摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. Since the copper electrodes formed on the diamond layer consist of high-quality single crystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.

摘要翻译： 表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜 在金刚石层的表面上外延生长的电极。 为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。 由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。 结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。

公开(公告)号：US5446329A

公开(公告)日：1995-08-29

申请号：US118976

申请日：1993-09-09

申请人： Hideaki Nakahata ,  Akihiro Hachigo ,  Kenjiro Higaki ,  Shinichi Shikata

发明人： Hideaki Nakahata ,  Akihiro Hachigo ,  Kenjiro Higaki ,  Shinichi Shikata

IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H01L41/08

CPC分类号： H03H9/02582

摘要： A surface acoustic wave element includes a hard layer containing a composition component essentially consisting of at least one of diamond and a diamond-like carbon film, a piezoelectric layer formed on the hard layer, a silicon dioxide (SiO.sub.2) layer formed on the piezoelectric layer, and electrodes combined with the piezoelectric layer to perform electro-mechanical conversion. The surface acoustic wave element has a larger electro-mechanical coupling coefficient and a higher surface acoustic wave propagation velocity than does a conventional surface acoustic wave element having no silicon dioxide layer, thereby obtaining a surface acoustic wave element that can operate in a high-frequency range. In particular, the electro-mechanical coupling coefficient is increased. The SiO.sub.2 layer is an electric insulator and rarely reacts with moisture or acids. The SiO.sub.2 layer protects the piezoelectric layer and the electrodes from effects of the external environment, thereby providing a surface acoustic wave element having good high-frequency characteristics and a high resistance to adverse environments.

摘要翻译： 表面声波元件包括含有基本上由金刚石和类金刚石碳膜中的至少一种组成的组成成分的硬质层，形成在硬质层上的压电层，形成在压电层上的二氧化硅（SiO 2）层 和与压电层结合的电极进行机电转换。 表面声波元件比没有二氧化硅层的常规表面声波元件具有更大的机电耦合系数和更高的表面声波传播速度，从而获得可以在高频下工作的表面声波元件 范围。 特别地，机电耦合系数增加。 SiO2层是电绝缘体，很少与水分或酸反应。 SiO 2层保护压电层和电极免受外部环境的影响，从而提供具有良好的高频特性和对不利环境的高抗性的表面声波元件。

公开(公告)号：US5355568A

公开(公告)日：1994-10-18

申请号：US158415

申请日：1993-11-29

申请人： Takahiro Imai ,  Hideaki Nakahata ,  Akihiro Hachigo ,  Naoji Fujimori

发明人： Takahiro Imai ,  Hideaki Nakahata ,  Akihiro Hachigo ,  Naoji Fujimori

IPC分类号： H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  H01L41/22

CPC分类号： H03H9/02582 ,  H03H9/02622 ,  Y10T29/42

摘要： A surface acoustic wave device having a diamond layer, a piezoelectric layer and a comb-like electrode, in which the piezoelectric layer and the comb-like electrode are formed on a surface of the diamond layer, which surface has been contacted to a substrate used in the formation of the diamond layer by a vapor phase growth method, which device has high stability and can be produced economically.

摘要翻译： 具有金刚石层，压电层和梳状电极的弹性表面波器件，其中压电层和梳状电极形成在金刚石层的表面上，该表面已经与所使用的衬底接触 在通过气相生长法形成金刚石层时，该装置具有高稳定性并且可以经济地生产。

公开(公告)号：US5343107A

公开(公告)日：1994-08-30

申请号：US117226

申请日：1993-09-03

申请人： Shinichi Shikata ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Kenjiro Higaki

发明人： Shinichi Shikata ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Kenjiro Higaki

IPC分类号： H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  H01L41/16

CPC分类号： H03H9/02582 ,  H03H3/08

摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. In the surface acoustic wave element having the above structure, since the copper electrodes formed on the diamond layer consist of high-quality singlecrystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.

摘要翻译： 表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜 在金刚石层的表面上外延生长的电极。 为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。 在具有上述结构的表面声波元件中，由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。 结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。