Light sensing display
    55.
    发明授权

    公开(公告)号:US11733807B2

    公开(公告)日:2023-08-22

    申请号:US15761603

    申请日:2016-07-18

    Applicant: Apple Inc.

    Abstract: A display may have an array of pixels. The pixels may contain light-emitting diodes. When it is desired to use the display to operate as a light sensor, some of the light-emitting diodes may be forward biased to emit light while some of the light-emitting diodes are reversed biased to detect the emitted light after the emitted light has reflected from an external object. During light sensing operations, one or more areas of the display may be temporarily deactivated so that the light-sensing pixels may measure the reflected light. Vertical lines may serve both as data loading lines and as current sensing lines. Currents may be sensed during drive transistor current compensation and during light sensing. The vertical lines may load signals into the pixels that forward bias the light-emitting diodes to emit light when it is desired to display images for a user.

    Displays With Silicon and Semiconducting Oxide Thin-Film Transistors

    公开(公告)号:US20220037374A1

    公开(公告)日:2022-02-03

    申请号:US17502909

    申请日:2021-10-15

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Reducing Border Width Around a Hole in Display Active Area

    公开(公告)号:US20210305350A1

    公开(公告)日:2021-09-30

    申请号:US17145815

    申请日:2021-01-11

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having display pixels formed in an active area of the display. The display further includes display driver circuitry for driving gate lines that are routed across the display. A hole such as a through hole, optical window, or other inactive region may be formed within the active area of the display. Multiple gate lines carrying the same signal may be merged together prior to being routed around the hole to help minimize the routing line congestion around the border of the hole. Dummy circuits may be coupled to the merged segment portion to help increase the parasitic loading on the merged segments. The hole may have a tapered shape to help maximize the size of the active area. The hole may have an asymmetric shape to accommodate multiple sub-display sensor components.

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