公开(公告)号：US20250151504A1

公开(公告)日：2025-05-08

申请号：US19017860

申请日：2025-01-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Guangcai YUAN ,  Hehe HU ,  Changhan HSIEH ,  Wei YANG ,  Liwen DONG ,  Jiayu HE ,  Dongfei HOU ,  Zhen ZHANG ,  Ce NING ,  Xin GU ,  Zhengliang LI

IPC: H10K10/46 ,  G02F1/1333 ,  G02F1/1362 ,  H10K19/10

Abstract: An array substrate includes a base substrate, a first conductive layer, a first electrode, an organic planarization layer and an organic active layer. The first conductive layer is provided on a side of the base substrate. The first electrode is provided on a side of the first conductive layer away from the base substrate, an orthographic projection of the first electrode on the base substrate overlapping an orthographic projection of the drain electrode on the base substrate. The organic planarization layer is provided on a side of the first electrode away from the base substrate, first via holes being provided in the organic planarization layer. The organic active layer is provided on a side of the organic planarization layer away from the base substrate, the organic active layer being connected to the source electrode by a first via hole and connected to the drain electrode by a first via hole.

公开(公告)号：US20250089303A1

公开(公告)日：2025-03-13

申请号：US18292558

申请日：2022-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Dongfang WANG ,  Zhengliang LI ,  Liping LEI ,  Chen XU

IPC: H01L29/786 ,  G09G3/20 ,  G11C19/28 ,  H01L29/08

Abstract: A thin film transistor, a shift register unit, a gate driving circuit and a display panel are provided. The M source branches and the N drain branches extend along a first direction and are arranged at intervals; in each of the P source-drain units, the M source branches and the N drain branches are alternately arranged, and M is greater than or equal to N; a semiconductor layer includes sub-channel regions between one drain branch and one source branch adjacent to each other; a sum of widths of the sub-channel regions of the P source-drain units in the first direction is W, and an average length of the sub-channel regions of the P source-drain units in a direction perpendicular to the first direction is L; 12≤W/L≤400, P, M and N are integers greater than or equal to 1, and P×N≥4.

公开(公告)号：US20240389414A1

公开(公告)日：2024-11-21

申请号：US17914415

申请日：2021-06-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei YANG ,  Fengjuan LIU ,  Wei LIU ,  Ce NING ,  Guangcai YUAN

IPC: H10K59/131 ,  G09G3/3233 ,  H10K59/12 ,  H10K59/121 ,  H10K59/124

Abstract: A display panel includes base substrate, second conductive layer, second active layer, third gate insulating layer, third conductive layer in sequence. The second conductive layer includes first conductive part forming first gate of first transistor. The second active layer includes first active part including first and second sub-active parts and third sub-active part therebetween. The first and second sub-active parts form first and second electrodes of first transistor, and portion of the third sub-active part forms channel region of first transistor. Orthographic projection of the first conductive part on the base substrate covers that of the third sub-active part. Orthographic projection of the third gate insulating layer on the base substrate covers that of the first active part. The third conductive layer includes second conductive part forming second gate of first transistor. Orthographic projection of the second conductive part on the base substrate covers that of the channel region.

公开(公告)号：US20240386864A1

公开(公告)日：2024-11-21

申请号：US18788302

申请日：2024-07-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Xin XIE ,  Yifang HUANG ,  Liping LEI ,  Chen XU

IPC: G09G3/36

Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region opposite to each other; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor including a first active layer, the first active layer includes a metal oxide semiconductor material; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor, and the second thin film transistor includes a second active layer, the second active layer includes a metal oxide semiconductor material.

公开(公告)号：US20240371336A1

公开(公告)日：2024-11-07

申请号：US18777612

申请日：2024-07-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qiong WU ,  Xiangjun PENG ,  Xin DUAN ,  Ce NING ,  Lizhong WANG ,  Yifan HOU ,  Shuo ZHANG ,  Huiling XUE ,  Hui GUO

IPC: G09G3/36 ,  G06F3/01 ,  G09G3/20 ,  G09G3/34

Abstract: A liquid crystal display device, a method for displaying an image, and an electronic device are provided. In the first operation mode, a control circuit of the display device is configured to: receive display data of an mth image frame, and control the display device to display n sub-field images. The display data includes initial gray scales under n base colors. In a sub-field image of the mth image frame: pixels include a target pixel, and an actual gray scale of the target pixel is an average of an intermediate gray scale and initial gray scales of T non-target pixels. An actual gray scale of at least a part of non-target pixels is an initial gray scale thereof. The target pixel meets at least one of a first condition and a second condition.

公开(公告)号：US20240332425A1

公开(公告)日：2024-10-03

申请号：US18028009

申请日：2022-03-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Fangqing WEN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Kun ZHAO ,  Zhengliang LI ,  Jie HUANG ,  Feifei LI ,  Yan QU ,  Liping LEI

IPC: H01L29/786 ,  H01L25/07

CPC classification number: H01L29/7869 ,  H01L25/074

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

公开(公告)号：US20240304698A1

公开(公告)日：2024-09-12

申请号：US18028114

申请日：2022-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI

IPC: H01L29/49 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/4908 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.

公开(公告)号：US20240297255A1

公开(公告)日：2024-09-05

申请号：US17919301

申请日：2021-11-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie HUANG ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969

Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

公开(公告)号：US20240250178A1

公开(公告)日：2024-07-25

申请号：US18017649

申请日：2022-02-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Kun ZHAO ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: The present disclosure provides a metal oxide thin film transistor, an array substrate and a display device. A metal oxide thin film transistor in the present disclosure includes: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; a carrier mobility of the first metal oxide semiconductor layer is higher than that of the second metal oxide semiconductor layer; a material of the first metal oxide semiconductor layer includes: a first metal oxide doped with a rear earth element; a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.

公开(公告)号：US20240221851A1

公开(公告)日：2024-07-04

申请号：US17996293

申请日：2021-11-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yunsik IM ,  Shunhang ZHANG ,  Fuqiang LI ,  Changfeng LI ,  Liwei LIU ,  Hehe HU ,  Ce NING ,  Hui ZHANG ,  Hongrun WANG ,  Zhuo LI

IPC: G11C19/28 ,  G09G3/20

CPC classification number: G11C19/28 ,  G09G3/20 ,  G09G2310/0267 ,  G09G2310/0286

Abstract: The present disclosure provides a shift register unit, a gate driving circuit and a display device. The shift register unit provided by the present disclosure includes: an input sub-circuit, an output sub-circuit, at least one pull-down control sub-circuit, at least one pull-down sub-circuit, at least one first noise reduction sub-circuit, and a reverse bias sub-circuit; the reverse bias sub-circuit is configured to control transistors in at least part of sub-circuits connected to a pull-up node to be in a reverse bias state through a power voltage signal in response to a potential of the pull-up node, or control the transistors in at least part of the sub-circuits connected to the pull-up node to be in the reverse bias state through a cascade signal in response to a potential of a cascade signal terminal.