LED DRIVER WITH SEGMENTED DYNAMIC HEADROOM CONTROL
    51.
    发明申请
    LED DRIVER WITH SEGMENTED DYNAMIC HEADROOM CONTROL 有权
    LED驱动器与SEGMENTED动态HEADROOM控制

    公开(公告)号:US20090230874A1

    公开(公告)日:2009-09-17

    申请号:US12363179

    申请日:2009-01-30

    CPC classification number: H05B33/0815 H05B33/0827

    Abstract: Techniques for dynamic headroom control in a light emitting diode (LED) system are disclosed. An output voltage is provided to drive a plurality of LED strings. A feedback controller monitors the tail voltages of the LED strings to identify the minimum tail voltage and adjusts the output voltage based on the lowest tail voltage. The LED strings grouped into subsets and the feedback controller is segmented such that, for a certain duration, a minimum tail voltage is determined for each subset. The minimum tail voltages of the subsets are used to determine the overall minimum tail voltage of the plurality of LED strings for the certain duration so as to control the output voltage in the following duration. The segments of the feedback controller can be implemented in separate integrated circuit (IC) packages, thereby facilitating adaptation to different numbers of LED strings by integrating the corresponding number of IC packages.

    Abstract translation: 公开了一种用于发光二极管(LED)系统中的动态裕量控制技术。 提供输出电压以驱动多个LED串。 反馈控制器监视LED串的尾部电压,以识别最小尾电压,并根据最低的尾部电压调节输出电压。 将LED串分组成子集,并且反馈控制器被分段,使得在一定持续时间内,为每个子集确定最小尾电压。 子集的最小尾电压用于在特定持续时间内确定多个LED串的总体最小尾电压,以便在随后的持续时间内控制输出电压。 反馈控制器的段可以在单独的集成电路(IC)封装中实现,从而通过集成相应数量的IC封装来促进适应不同数量的LED串。

    Voltage up-conversion circuit
    52.
    发明授权
    Voltage up-conversion circuit 有权
    电压上变频电路

    公开(公告)号:US07586295B2

    公开(公告)日:2009-09-08

    申请号:US12157241

    申请日:2008-06-09

    Applicant: Bin Zhao

    Inventor: Bin Zhao

    CPC classification number: H02M3/07

    Abstract: According to one exemplary embodiment, a voltage up-conversion circuit includes a modulated voltage generator circuit, where the modulated voltage generator circuit is configured to receive an input voltage and generate a modulated voltage, and where the modulated voltage generator circuit includes at least one transistor. The voltage up-conversion circuit further includes a switching circuit coupled to the modulated voltage generator circuit, where the switching circuit is configured to couple the modulated voltage to a load capacitor when the modulated voltage is at a high level and decouple the modulated voltage to the load capacitor when the modulated voltage is at a low level. In the voltage up-conversion circuit, the load capacitor reaches a voltage greater a breakdown voltage of the at least one transistor in the modulated voltage generator circuit. The breakdown voltage can be a reliability breakdown voltage.

    Abstract translation: 根据一个示例性实施例,电压上变换电路包括调制电压发生器电路,其中调制电压发生器电路被配置为接收输入电压并产生调制电压,并且其中调制电压发生器电路包括至少一个晶体管 。 电压上变换电路还包括耦合到调制电压发生器电路的开关电路,其中开关电路被配置为当调制电压处于高电平时将调制电压耦合到负载电容器,并将调制电压去耦到 当调制电压处于低电平时加载电容。 在电压上变换电路中,负载电容器达到调制电压发生器电路中至少一个晶体管的击穿电压更大的电压。 击穿电压可以是可靠性击穿电压。

    CIRCUIT FOR PROVIDING AN APPROXIMATELY CONSTANT RESISTANCE AND/OR CURRENT AND METHOD THEREFOR
    53.
    发明申请
    CIRCUIT FOR PROVIDING AN APPROXIMATELY CONSTANT RESISTANCE AND/OR CURRENT AND METHOD THEREFOR 有权
    提供大约不变电阻和/或电流及其方法的电路

    公开(公告)号:US20090108776A1

    公开(公告)日:2009-04-30

    申请号:US11929194

    申请日:2007-10-30

    Applicant: Bin Zhao

    Inventor: Bin Zhao

    CPC classification number: H05B33/0812 Y02B20/345

    Abstract: A circuit can provide an approximately constant resistance value that is virtually independent of process and temperature variations. A current control circuit may use a device that tracks the changes in a corresponding device over process and temperature variations. As a result, the behavior of device may be used to help determine the control information provided to device in order to maintain an approximately constant resistance Rm over process and temperature variations. The approximately constant resistance Rm may be used to provide an approximately constant current ILED. A wide variety of applications, not just LED drivers, may benefit from the use of an approximately constant resistance and/or current.

    Abstract translation: 电路可以提供几乎不变的过程和温度变化的近似恒定的电阻值。 电流控制电路可以使用跟踪过程和温度变化的对应装置中的变化的装置。 结果,可以使用装置的行为来帮助确定提供给装置的控制信息,以便在过程和温度变化上保持大致恒定的电阻Rm。 可以使用大致恒定的电阻Rm来提供近似恒定的电流ILED。 各种应用,不仅仅是LED驱动器,可能受益于使用近似恒定的电阻和/或电流。

    Distributed network system architecture for collaborative computing

    公开(公告)号:US20060248144A1

    公开(公告)日:2006-11-02

    申请号:US11480659

    申请日:2006-07-03

    CPC classification number: H04L12/1827 H04L67/1095 H04L69/329 H04L69/40

    Abstract: A distributed collaborative computer system is provided that comprises a plurality of server computers interconnected via a high-speed link. Client computers can connect to any available server computer and start or join a conference hosted on either the server computer to which the client computer is connected or any other server in the system. As a result, the system and method of the present invention is easily scalable to support an arbitrary number of participants to a conference by merely adding the appropriate number of server computers to the system. In addition, by replicating the conference information on more than one server computer, the single point of failure limitation is eliminated. In fact, if a server hosting or participating in a conference malfunctions, the failure is detected by other server computers and the client computer is able to reconnect to the conference through a new server computer.

    Interleaver using spatial birefringent elements
    55.
    发明授权
    Interleaver using spatial birefringent elements 失效
    交织器使用空间双折射元件

    公开(公告)号:US06781754B2

    公开(公告)日:2004-08-24

    申请号:US09876368

    申请日:2001-06-07

    Applicant: Bin Zhao

    Inventor: Bin Zhao

    CPC classification number: G02B27/283

    Abstract: An interleaver has an input polarization beam displacer, a birefringent filter assembly in optical communication with the input polarization beam displacer, a first output polarization beam displacer in optical communication with the birefringent filter assembly and a second output polarization beam displacer optical communication with the first output polarization beam displacer. The birefringent filter assembly preferably comprises at least one birefringent filter stage, wherein each birefringent filter stage comprises a first filter polarization beam displacer, a second filter polarization beam displacer and at least one reflector configured so as to direct light from first filter polarization beam displacer to the second filter of polarization beam displacer.

    Abstract translation: 交织器具有输入偏振光束置换器,与输入偏振光束置换器光学通信的双折射滤光器组件,与双折射滤光器组件光学通信的第一输出偏振光束置换器和与第一输出光学通信的第二输出偏振光束置换器 偏振光束置换器。 双折射滤光器组件优选地包括至少一个双折射滤光器级,其中每个双折射滤光镜级包括第一滤光器偏振光束置换器,第二滤光器偏振光束置换器和至少一个反射器,其被配置为将来自第一滤光器偏振光束置换器的光引导到 偏振光束置换器的第二滤光器。

    Method of making a damascene metallization
    57.
    发明授权
    Method of making a damascene metallization 失效
    制作镶嵌金属化的方法

    公开(公告)号:US5736457A

    公开(公告)日:1998-04-07

    申请号:US811954

    申请日:1997-03-05

    Applicant: Bin Zhao

    Inventor: Bin Zhao

    Abstract: A semiconductor process and structure is provided for use in single or dual damascene metallization processes. A thin metal layer which serves as an etch stop and masking layer is deposited upon a first dielectric layer. Then, a second dielectric layer is deposited upon the thin metallization masking layer. The thin metallization masking layer provides an etch stop to form the bottom of the in-laid conductor grooves. In a dual damascene process, the thin metallization masking layer leaves open the via regions. Thus, the conductor grooves above the metallization masking layer and the via regions may be etched in the first and second dielectrics in one step. In a single damascene process, the thin metallization etch masking layer may cover the via regions. The etch stop and masking layer can be formed from any conductive or non-conductive materials whose chemical, mechanical, thermal and electrical properties are compatible with the process and circuit performance.

    Abstract translation: 提供半导体工艺和结构用于单镶嵌金属化或双镶嵌金属化工艺。 用作蚀刻停止和掩蔽层的薄金属层沉积在第一介电层上。 然后,在薄金属化掩模层上沉积第二介电层。 薄金属化掩模层提供蚀刻停止以形成嵌入式导体槽的底部。 在双镶嵌工艺中,薄的金属化掩模层离开通孔区域。 因此,可以在一个步骤中在金属化屏蔽层上方的导体沟槽和通孔区域在第一和第二电介质中被蚀刻。 在单个镶嵌工艺中,薄金属化蚀刻掩模层可以覆盖通孔区域。 蚀刻停止和掩蔽层可以由其化学,机械,热和电特性与工艺和电路性能兼容的任何导电或非导电材料形成。

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