公开(公告)号：US07898042B2

公开(公告)日：2011-03-01

申请号：US11801735

申请日：2007-05-09

申请人： Gang Yu ,  Chan-Long Shieh ,  Hsing-Chung Lee

发明人： Gang Yu ,  Chan-Long Shieh ,  Hsing-Chung Lee

IPC分类号： H01L21/00 ,  H01L47/00 ,  H01L29/04

CPC分类号： H01L29/861 ,  G02F1/1365 ,  G02F1/167 ,  H01L29/22 ,  H01L29/417 ,  H01L29/786 ,  H01L45/00 ,  H01L51/0035 ,  H01L51/0579 ,  H01L51/0587

摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.

摘要翻译： 提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。 这些装置可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。 开关器件包括两个电极和位于电极之间的宽带半导体材料层。 根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。 阴极和阳极材料之间的功函数差异优选为至少约0.6eV。 可以实现在约15V的电压范围内的至少10,000的开/关电流比。 如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

公开(公告)号：US20100012932A1

公开(公告)日：2010-01-21

申请号：US12173995

申请日：2008-07-16

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

摘要： A fabrication method is used in conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick and the upper major surface and the lower major surface have material in abutting engagement to form underlying interfaces and overlying interfaces. The method of fabrication includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces to adjust the carrier density in the adjacent metal oxide by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement. The method also includes one or both steps of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer.

摘要翻译： 一种制造方法与具有小于100nm厚的金属氧化物活性层的半导体器件结合使用，并且上主表面和下主表面具有邻接接合的材料以形成底层界面和上覆界面。 制造方法包括通过选择用于金属氧化物活性层的金属氧化物并通过选择用于邻接接合的材料的特定材料来控制下面的界面和上覆界面中的界面相互作用来调节相邻金属氧化物中的载流子密度。 该方法还包括一个或两个步骤，通过对形成下面界面的组分的下层材料进行表面处理来控制底层界面中的相互作用，并且通过在将材料沉积在其上的材料之前进行的金属氧化物膜的表面处理来控制上覆界面中的相互作用 金属氧化物层。

公开(公告)号：US09947704B1

公开(公告)日：2018-04-17

申请号：US15296586

申请日：2016-10-18

申请人： Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

发明人： Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

IPC分类号： H01L27/146

CPC分类号： H01L27/14616 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14692

摘要： A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film transistors on the surface of a rigid support member, depositing a planarizing layer on the matrix of transistors that is either porous or permissive/diffusive to oxygen at temperatures below approximately 200° C., and fabricating a matrix of passivated a-Si photodiodes over the matrix of transistors and electrically connected one each photodiode to each of the transistors. A continuous path is provided through the planarizing layer from the exterior of the structure to each of the transistors and the structure is annealed at a temperature below 200° C. in an oxygen ambient to move oxygen from the oxygen ambient to an active layer of each of the transistors and repair loss of oxygen damage to the transistors caused by the fabrication of the passivated a-Si photodiodes.

公开(公告)号：US20170033227A1

公开(公告)日：2017-02-02

申请号：US15225592

申请日：2016-08-01

申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

IPC分类号： H01L29/786 ,  H01L23/00 ,  H01L23/31 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L21/321 ,  H01L21/324 ,  H01L21/383 ,  H01L21/428 ,  H01L21/44 ,  H01L21/47635 ,  H01L21/477 ,  H01L21/823418 ,  H01L23/3171 ,  H01L23/564 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

摘要翻译： 一种方法，包括提供具有栅极的衬底，与栅极相邻的栅极绝缘体材料层和位于与栅极相对的栅极绝缘体上的金属氧化物半导体材料层，形成选择性图案化的蚀刻停止钝化层并在高温下加热 在含氧或含氮或惰性气氛中选择性地增加未被蚀刻停止层覆盖的金属氧化物半导体的区域中的载流子浓度，其上形成有上层和间隔开的源极/漏极金属。 随后在含氧或含氮或惰性气氛中加热晶体管，以进一步改善源极/漏极接触，并将阈值电压调节到期望的水平。 在晶体管的顶部提供额外的钝化层，具有电气绝缘和对周围环境中的潮湿和化学物质的阻隔性能。

公开(公告)号：US09520437B2

公开(公告)日：2016-12-13

申请号：US14460054

申请日：2014-08-14

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L27/30 ,  H01L51/42

CPC分类号： H01L27/14663 ,  H01L27/14612 ,  H01L27/14658 ,  H01L27/14692 ,  H01L27/308 ,  H01L51/4293

摘要： A method of fabricating an X-ray imager including the steps of forming an etch stop layer on a glass substrate and depositing a stack of semiconductor layers on the etch stop layer to form a sensor plane. Separating the stack into an array of PIN photodiodes. Depositing a layer of insulating material on the array to form a planarized surface and forming vias through the insulating layer into communication with an upper surface of each photodiode and forming metal contacts on the planarized surface through the vias in contact with each photodiode. Fabricating an array of MOTFTs in an active pixel sensor configuration backplane on the planarized surface and in electrical communication with the contacts, to provide a sensor plane/MOTFT backplane interconnected combination. Attaching a flexible support carrier to the MOTFT backplane and removing the glass substrate. A scintillator is then laminated on the array of photodiodes.

摘要翻译： 一种制造X射线成像仪的方法，包括以下步骤：在玻璃衬底上形成蚀刻停止层，并在蚀刻停止层上淀积一叠半导体层以形成传感器平面。 将堆叠分成PIN光电二极管阵列。 在阵列上沉积绝缘材料层以形成平坦化表面，并且通过绝缘层形成通孔，与每个光电二极管的上表面连通，并通过与每个光电二极管接触的通孔在平坦化表面上形成金属触点。 在平坦化表面上的有源像素传感器配置底板中和与触点电连通的MOTFT阵列制造，以提供传感器平面/ MOTFT背板互连的组合。 将柔性支撑载体安装到MOTFT背板上，并拆下玻璃基板。 然后将闪烁体层压在光电二极管阵列上。

公开(公告)号：US09412623B2

公开(公告)日：2016-08-09

申请号：US14833462

申请日：2015-08-24

申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

IPC分类号： H01L21/383 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L23/00 ,  H01L21/8234 ,  H01L21/4763 ,  H01L21/324 ,  H01L21/321 ,  H01L21/477 ,  H01L21/428 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L21/321 ,  H01L21/324 ,  H01L21/383 ,  H01L21/428 ,  H01L21/44 ,  H01L21/47635 ,  H01L21/477 ,  H01L21/823418 ,  H01L23/3171 ,  H01L23/564 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

摘要翻译： 一种方法，包括提供具有栅极的衬底，与栅极相邻的栅极绝缘体材料层和位于与栅极相对的栅极绝缘体上的金属氧化物半导体材料层，形成选择性图案化的蚀刻停止钝化层并在高温下加热 在含氧或含氮或惰性气氛中选择性地增加未被蚀刻停止层覆盖的金属氧化物半导体的区域中的载流子浓度，其上形成有上层和间隔开的源极/漏极金属。 随后在含氧或含氮或惰性气氛中加热晶体管，以进一步改善源极/漏极接触并将阈值电压调节到所需的电平。 在晶体管的顶部提供额外的钝化层，具有电气绝缘和对周围环境中的潮湿和化学物质的阻隔性能。

公开(公告)号：US20160204278A1

公开(公告)日：2016-07-14

申请号：US15080231

申请日：2016-03-24

申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： A method of fabricating MO TFTs includes positioning opaque gate metal on a transparent substrate to define a gate area. Depositing gate dielectric material overlying the gate metal and a surrounding area, and depositing metal oxide semiconductor material thereon. Depositing etch stop material on the semiconductor material. Positioning photoresist defining an isolation area in the semiconductor material, the etch stop material and the photoresist being selectively removable. Exposing the photoresist from the rear surface of the substrate and removing exposed portions to leave the etch stop material uncovered except for a portion overlying and aligned with the gate metal. Etching uncovered portions of the semiconductor material to isolate the TFT. Using the photoresist, selectively etching the etch stop layer to leave a portion overlying and aligned with the gate metal and defining a channel area in the semiconductor material. Depositing and patterning conductive material to form source and drain areas.

摘要翻译： 一种制造MO TFT的方法包括将不透明栅极金属定位在透明基板上以限定栅极区域。 覆盖栅极金属和周围区域的沉积栅介质材料，以及在其上沉积金属氧化物半导体材料。 在半导体材料上沉积蚀刻停止材料。 定义在半导体材料中限定隔离区域的光致抗蚀剂，蚀刻停止材料和光致抗蚀剂可选择性地移除。 从基板的后表面露出光致抗蚀剂，除去暴露的部分以使蚀刻停止材料未被覆盖，除了覆盖并与栅极金属对准的部分之外。 蚀刻半导体材料的未覆盖部分以隔离TFT。 使用光致抗蚀剂，选择性地蚀刻蚀刻停止层以留下覆盖并与栅极金属对准的部分并限定半导体材料中的沟道区域。 沉积和图案化导电材料以形成源区和漏区。

公开(公告)号：US20160049441A1

公开(公告)日：2016-02-18

申请号：US14460054

申请日：2014-08-14

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L27/146

CPC分类号： H01L27/14663 ,  H01L27/14612 ,  H01L27/14658 ,  H01L27/14692 ,  H01L27/308 ,  H01L51/4293

摘要： A method of fabricating an X-ray imager including the steps of forming an etch stop layer on a glass substrate and depositing a stack of semiconductor layers on the etch stop layer to form a sensor plane. Separating the stack into an array of PIN photodiodes. Depositing a layer of insulating material on the array to form a planarized surface and forming vias through the insulating layer into communication with an upper surface of each photodiode and forming metal contacts on the planarized surface through the vias in contact with each photodiode. Fabricating an array of MOTFTs in an active pixel sensor configuration backplane on the planarized surface and in electrical communication with the contacts, to provide a sensor plane/MOTFT backplane interconnected combination. Attaching a flexible support carrier to the MOTFT backplane and removing the glass substrate. A scintillator is then laminated on the array of photodiodes.

摘要翻译： 一种制造X射线成像仪的方法，包括以下步骤：在玻璃衬底上形成蚀刻停止层，并在蚀刻停止层上淀积一叠半导体层以形成传感器平面。 将堆叠分成PIN光电二极管阵列。 在阵列上沉积绝缘材料层以形成平坦化表面，并且通过绝缘层形成通孔，与每个光电二极管的上表面连通，并通过与每个光电二极管接触的通孔在平坦化表面上形成金属触点。 在平坦化表面上的有源像素传感器配置底板中和与触点电连通的MOTFT阵列制造，以提供传感器平面/ MOTFT背板互连的组合。 将柔性支撑载体安装到MOTFT背板上，并拆下玻璃基板。 然后将闪烁体层压在光电二极管阵列上。

公开(公告)号：US09257490B2

公开(公告)日：2016-02-09

申请号：US14288577

申请日：2014-05-28

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01J9/00 ,  H01L27/32

CPC分类号： H01L27/3218 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/5284

摘要： A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

摘要翻译： 全色AM OLED包括透明基板，位于基板的上表面上的滤色器和金属氧化物薄膜晶体管背板，其位于滤色器上并且限定像素阵列。 OLED阵列形成在背板上并且定位成以全色显示器向下通过背板，滤色器和基板发光。 由每个OLED发射的光包括第一发射带，其波长在两种原色的范围内延伸，第二发射带具有延伸超过剩余原色范围的波长。 滤色器包括每个像素，将第一发射带分成两个分开的原色的两个区和通过第二发射带的第三区。

公开(公告)号：US09240437B2

公开(公告)日：2016-01-19

申请号：US14216920

申请日：2014-03-17

申请人： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

发明人： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

IPC分类号： H01L21/84 ,  H01L27/32 ,  H01L51/00 ,  H01L27/12 ,  H01L29/786 ,  H01L51/56 ,  H01L51/52

CPC分类号： H01L27/3244 ,  H01L27/1259 ,  H01L27/322 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5246 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5338

摘要： A process of fabricating a flexible TFT back-panel on a glass support includes a step of providing a flat glass support member sufficiently thick to prevent bending during the processing. A layer of etch stop material is positioned on the upper surface of the glass support member and an insulating buffer layer is positioned on the layer of etch stop material. A TFT back-panel is positioned on the insulating buffer layer and a flexible plastic carrier is affixed to the TFT back-panel. The glass support member is etched away, whereby a flexible TFT back-panel is provided. The TFT back-panel can include a matrix of either OLED cells or LCD cells.

摘要翻译： 在玻璃支架上制造柔性TFT背板的工艺包括提供足够厚的平板玻璃支撑件以防止加工过程中弯曲的步骤。 一层蚀刻停止材料定位在玻璃支撑构件的上表面上，并且绝缘缓冲层位于蚀刻停止材料层上。 TFT背板位于绝缘缓冲层上，柔性塑料载体固定在TFT后面板上。 蚀刻玻璃支撑构件，由此提供柔性TFT背面板。 TFT背面板可以包括OLED单元或LCD单元的矩阵。