Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system
    52.
    发明授权
    Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system 有权
    扫描电子显微镜系统和通过使用该系统测量在半导体器件上形成的图案的尺寸的方法

    公开(公告)号:US08481936B2

    公开(公告)日:2013-07-09

    申请号:US13348813

    申请日:2012-01-12

    IPC分类号: H01J37/26

    CPC分类号: G03F1/84 G03F1/86 G03F7/70625

    摘要: The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

    摘要翻译: 本发明提供一种扫描电子显微镜系统,其适于输出与样品的实际图案边缘端相匹配的轮廓信息,并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘,通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联,以横截面形状获得边缘端配件的位置坐标,并将图案的轮廓作为位置坐标的范围输出。

    Pattern Shape Estimation Method and Pattern Measuring Device
    53.
    发明申请
    Pattern Shape Estimation Method and Pattern Measuring Device 有权
    图案形状估计方法和图案测量装置

    公开(公告)号:US20120151428A1

    公开(公告)日:2012-06-14

    申请号:US13390354

    申请日:2010-07-15

    IPC分类号: G06F17/50

    摘要: The present invention aims at proposing a library creation method and a pattern shape estimation method in which it is possible, when estimating a shape based on comparison between an actual waveform and a library, to appropriately estimate the shape.As an illustrative embodiment to achieve the object, there are proposed a method of selecting a pattern by referring to a library, a method of creating a library by use of pattern cross-sectional shapes calculated through an exposure process simulation in advance, and a method for selecting a pattern shape stored in the library.

    摘要翻译: 本发明旨在提出一种库创建方法和图案形状估计方法,其中当基于实际波形和库之间的比较来估计形状时,可以适当地估计形状。 作为实现该目的的说明性实施例,提出了通过参照库来选择图案的方法,通过使用预先通过曝光处理模拟计算的图案横截面形状来创建库的方法,以及方法 用于选择存储在库中的图案形状。

    SCANNING ELECTRON MICROSCOPE SYSTEM AND METHOD FOR MEASURING DIMENSIONS OF PATTERNS FORMED ON SEMICONDUCTOR DEVICE BY USING THE SYSTEM
    54.
    发明申请
    SCANNING ELECTRON MICROSCOPE SYSTEM AND METHOD FOR MEASURING DIMENSIONS OF PATTERNS FORMED ON SEMICONDUCTOR DEVICE BY USING THE SYSTEM 有权
    扫描电子显微镜系统和通过使用系统测量形成在半导体器件上的图案尺寸的方法

    公开(公告)号:US20120112067A1

    公开(公告)日:2012-05-10

    申请号:US13348813

    申请日:2012-01-12

    IPC分类号: H01J37/28

    CPC分类号: G03F1/84 G03F1/86 G03F7/70625

    摘要: The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

    摘要翻译: 本发明提供一种扫描电子显微镜系统,其适于输出与样品的实际图案边缘端相匹配的轮廓信息,并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘,通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联,以横截面形状获得边缘端配件的位置坐标,并将图案的轮廓作为位置坐标的范围输出。

    Defect inspection method and apparatus
    55.
    发明授权
    Defect inspection method and apparatus 有权
    缺陷检查方法和装置

    公开(公告)号:US08107717B2

    公开(公告)日:2012-01-31

    申请号:US13072102

    申请日:2011-03-25

    IPC分类号: G06K9/00

    摘要: Arrangements for inspecting a specimen on which plural patterns are formed; capturing a first image of a first area; capturing a second image of a second area in which patterns which are essentially the same with the patterns formed in the first area; creating data relating to corresponding pixels of the first and second images, for each pixel; determining a threshold for each pixel for detecting defects directly in accordance with the first and second images; and detecting defects on the specimen by processing the first and second images by using the threshold for each pixel and information of a scattered diagram of brightness of the first and second images, wherein the threshold is determined by using information of brightness of a local region of at least one of the first and second images, with the local region including an aimed pixel and peripheral pixels of the aimed pixel.

    摘要翻译: 用于检查形成多个图案的样本的布置; 捕获第一区域的第一图像; 捕获与形成在第一区域中的图案基本上相同的图案的第二区域的第二图像; 为每个像素创建与第一和第二图像的相应像素有关的数据; 根据第一和第二图像确定用于检测缺陷的每个像素的阈值; 以及通过使用每个像素的阈值和第一和第二图像的亮度的散射图的信息来处理第一和第二图像来检测样本上的缺陷,其中,通过使用第一和第二图像的局部区域的亮度的信息来确定阈值 第一和第二图像中的至少一个,其中局部区域包括目标像素和目标像素的外围像素。

    Method and Apparatus For Inspecting Defect Of Pattern Formed On Semiconductor Device
    56.
    发明申请
    Method and Apparatus For Inspecting Defect Of Pattern Formed On Semiconductor Device 有权
    检测半导体器件形成缺陷的方法和装置

    公开(公告)号:US20120002861A1

    公开(公告)日:2012-01-05

    申请号:US13231394

    申请日:2011-09-13

    IPC分类号: G06K9/00

    摘要: An apparatus and method for inspecting a defect of a circuit pattern formed on a semiconductor wafer includes a defect classifier have a comparison shape forming section for forming a plurality of comparison shapes corresponding to an SEM image of an inspection region by deforming the shape of the circuit pattern in accordance with a plurality of shape deformation rules using design data corresponding to the circuit pattern within the inspection region and a shape similar to the SEM image of the inspection region out of the plurality of comparison shapes formed and selected as the comparison shape, and a shape comparing and classifying section for classifying the SEM image using information of the comparison shape selected in the comparison shape forming section and the inspection shape of the circuit pattern of the SEM image of the inspection region.

    摘要翻译: 用于检查形成在半导体晶片上的电路图案的缺陷的装置和方法包括:缺陷分类器,具有比较形状形成部,用于通过使电路的形状变形来形成与检查区域的SEM图像对应的多个比较形状 使用与检查区域内的电路图案相对应的设计数据的多个形状变形规则的形状以及形成和选择为比较形状的多个比较形状中的检查区域的SEM图像的形状,以及 形状比较和分类部分,用于使用在比较形状形成部分中选择的比较形状的信息和检查区域的SEM图像的电路图案的检查形状来对SEM图像进行分类。

    Apparatus for measuring a three-dimensional shape
    59.
    发明申请
    Apparatus for measuring a three-dimensional shape 有权
    用于测量三维形状的装置

    公开(公告)号:US20060108526A1

    公开(公告)日:2006-05-25

    申请号:US11320752

    申请日:2005-12-30

    IPC分类号: G21K7/00

    摘要: Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process. According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained. The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

    摘要翻译: 通常,没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法,并且确定蚀刻条件需要花费大量时间和成本。 仅使用常规的长度测量方法,就不可能检测到三维形状的异常,并且也难以控制蚀刻工艺。 根据本发明,利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据,从而定量评估三维形状。 此外,基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。 本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。 此外,可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

    Defect inspection method and apparatus
    60.
    发明申请
    Defect inspection method and apparatus 有权
    缺陷检查方法和装置

    公开(公告)号:US20060038987A1

    公开(公告)日:2006-02-23

    申请号:US11204181

    申请日:2005-08-16

    IPC分类号: G01N21/88

    摘要: A method of inspecting defects of a plurality of patterns that are formed on a substrate to have naturally the same shape. According to this method, in order to detect very small defects of the patterns with high sensitivity without being affected by irregular brightness due to the thickness difference between the patterns formed on a semiconductor wafer, a first pattern being inspected is detected to produce a first image of the first pattern, the first image is stored, a second pattern being inspected is detected to produce a second image of said second pattern, the stored first image and the second image are matched in brightness, and the brightness-matched first and second images are compared with each other so that the patterns can be inspected.

    摘要翻译: 检查在基板上形成的具有自然相同形状的多个图案的缺陷的方法。 根据该方法,为了以高灵敏度检测图案的非常小的缺陷,不受由于在半导体晶片上形成的图案之间的厚度差而引起的不规则亮度的影响,检测出被检查的第一图案以产生第一图像 第一图案被存储,检测出被检查的第二图案以产生所述第二图案的第二图像,所存储的第一图像和第二图像的亮度相匹配,并且亮度匹配的第一和第二图像 彼此进行比较,从而可以检查图案。