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公开(公告)号：US08519372B2
公开(公告)日：2013-08-27
申请号：US13259173
申请日：2009-07-30
IPC分类号： H01L29/02
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译： 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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52.发明申请公开(公告)号：US20130099187A1
公开(公告)日：2013-04-25
申请号：US13281186
申请日：2011-10-25
CPC分类号： H01L47/00 , H01L27/26 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , Y10T428/197 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926
摘要： A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.
摘要翻译： 公开了一种多层结构，其包括导电层，设置在导电层上方的负差动电阻（NDR）材料层，设置在NDR材料上方的层M2，设置在层M2上方的NDR材料的第二层，以及 导电层设置在第二NDR层之上。 层M2可以包括散布有电介质材料的区域或电介质材料层的导电材料和设置在电介质材料上方和下方的导电材料的区域。
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公开(公告)号：US20130044525A1
公开(公告)日：2013-02-21
申请号：US13212428
申请日：2011-08-18
IPC分类号： H02M7/04
CPC分类号： H02M7/06
摘要： An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device.
摘要翻译： 非对称开关整流器包括第一开关装置，以在第一状态下允许电流流动并且阻止处于第二状态的电流和以头对头形式连接到所述第一开关装置的第二开关装置，所述第二开关装置 切换以允许电流在第一状态下流动并且在第二状态下抑制电流。 将所述开关器件转换到所述第一状态的第一电流不同于将所述开关器件转换到所述第二状态的第二电流。 整流器还包括旁路段，以从所述第一开关器件和所述第二开关器件之间的中心电极抽取旁路电流。
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公开(公告)号：US08331131B2
公开(公告)日：2012-12-11
申请号：US13018040
申请日：2011-01-31
CPC分类号： G11C13/0007 , G11C11/5685 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/54 , G11C2213/55
摘要： A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.
摘要翻译： 一种改变具有位于第一电极和第二电极之间的第一中间层，第二中间层和第三中间层的忆阻器的状态的方法包括：将具有第一偏置电压的第一脉冲施加在该忆阻器两端，其中， 第一脉冲导致移动物质在忆阻器内沿第一方向流动并收集在第一中间层中，从而使忆阻器进入中间状态，并施加具有第二偏置电压的第二脉冲跨过忆阻器，其中第二脉冲 使得来自第一中间层的移动物质在忆阻器内沿第二方向流动并收集在第三中间层中，其中移动物种在第二方向上的流动使得忆阻器进入完全改变的状态。
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公开(公告)号：US20120113706A1
公开(公告)日：2012-05-10
申请号：US13383572
申请日：2009-09-04
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100′, 100″) based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100′) and an ON-switched diode (100″) are also provided, A method of operating the memristor is further provided.
摘要翻译： 基于混合金属化合物的忆阻器（100,100'，100“）包括：第一电极（115）; 第二电极（120）; 与至少一个完全氧化相的层（110,1 110a，110b）物理接触的混合金属 - 价相的层（105）。 混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场（125）而漂移进入和离开完全氧化相。 第一和第二电极中的一个与混合金属价态层的层或完全氧化相的层（110a）电接触，另一个与层（或其他层（110b））电接触 ））的完全氧化相。 忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。 还提供了可逆二极管（100'）和导通开关二极管（100“）。还提供了一种操作忆阻器的方法。
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56.发明申请MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES 有权具有包含多个相位的复合材料的开关层的电容器公开(公告)号：US20110309321A1
公开(公告)日：2011-12-22
申请号：US12819763
申请日：2010-06-21
CPC分类号： H01L27/24 , G11C13/0007 , G11C2213/52 , H01L45/04 , H01L45/145
摘要： A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.
摘要翻译： 公开了具有包括多相复合的开关层的忆阻器。 忆阻器包括：第一电极; 与所述第一电极间隔开的第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，所述开关层包括所述多相复合系统，所述多相复合系统包括第一多数相，所述第一多数相包括开关材料的相对绝缘的矩阵，以及包括相对导电材料的第二少数相， 在忆阻器的制造过程中，在开关层中形成至少一个导电沟道。 还公开了制造忆阻器和使用忆阻器的横杆的方法。
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公开(公告)号：US20110267610A1
公开(公告)日：2011-11-03
申请号：US12772063
申请日：2010-04-30
申请人： Min HU , Wei Wu , Fung Suong Ou , Zhen Peng , Zhiyong Li , R. Stanley Williams
发明人： Min HU , Wei Wu , Fung Suong Ou , Zhen Peng , Zhiyong Li , R. Stanley Williams
IPC分类号： G01J3/44
CPC分类号： G01N21/658 , G01N21/7746
摘要： A compact sensor system comprising: an analysis cell configured for photon-matter interaction, where photons are received from a light source; and an integrated-optical spectral analyzer configured for identifying a set of frequencies, the integrated-optical spectral analyzer comprising: a waveguide coupled with the analysis cell, the waveguide configured for propagating a set of frequencies through the waveguide; one or more ring resonators coupled with the waveguide, the one or more ring resonators comprising a predetermined bandwidth and configured for capturing the set of frequencies corresponding to frequencies within the predetermined bandwidth; and one or more frequency detectors coupled with the one or more tunable ring resonators, the one or more frequency detectors configured for generating electrical signals that identify each of the set of frequencies.
摘要翻译： 一种紧凑的传感器系统，包括：配置用于光子 - 物质相互作用的分析单元，其中从光源接收光子; 所述集成光谱分析仪包括：与所述分析单元耦合的波导，所述波导被配置为通过所述波导传播一组频率;以及波导，其被配置为用于识别一组频率。 一个或多个与所述波导耦合的环形谐振器，所述一个或多个环形谐振器包括预定带宽并被配置用于捕获与所述预定带宽内的频率相对应的频率集合; 以及与所述一个或多个可调环形谐振器耦合的一个或多个频率检测器，所述一个或多个频率检测器被配置用于产生标识所述一组频率中的每一个的电信号。
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公开(公告)号：US20110266513A1
公开(公告)日：2011-11-03
申请号：US13142582
申请日：2009-01-26
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/148
摘要： Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
摘要翻译： 本发明的各种实施例涉及将可重构二极管整流状态与非易失性忆阻转换组合的电子器件。 一方面，电子设备（210,230,240）包括夹在第一电极（104）和第二电极（106）之间的有源区（212）。 有源区域包括两个或更多个半导体层和至少一个能够选择性地定位在有源区域内以控制电荷载流子通过该器件的流动的掺杂剂。
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公开(公告)号：US07872318B2
公开(公告)日：2011-01-18
申请号：US11584103
申请日：2006-10-20
IPC分类号： H01L27/14
CPC分类号： B82Y20/00 , G01N21/658 , H01L31/035227
摘要： A sensing device includes an optical cavity having two substantially opposed reflective surfaces. At least one nanowire is operatively disposed in the optical cavity. A plurality of metal nanoparticles is established on the at least one nanowire.
摘要翻译： 感测装置包括具有两个基本上相对的反射表面的光学腔。 至少一个纳米线可操作地设置在光腔中。 在至少一个纳米线上建立多个金属纳米颗粒。
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60.发明授权Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure 失效用于纳米压印光刻的聚合物溶液，以减少压印温度和压力公开(公告)号：US07750059B2
公开(公告)日：2010-07-06
申请号：US10313596
申请日：2002-12-04
IPC分类号： B29C35/08
CPC分类号： B29C43/003 , B29C35/0888 , B29C59/022 , B29C2035/0827 , B29C2043/025 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/033
摘要： A method of forming features on substrates by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on a substrate to form a liquid film thereon; and then either: (c) curing the liquid film by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film, the polymer film having a glass transition temperature (Tg); and imprinting the polymer film with a mold having a desired pattern to form a corresponding negative pattern in the polymer film, or (d) imprinting the liquid film with the mold and curing it to form the polymer film. The temperature of imprinting is as little as 10° C. above the Tg, or even less if the film is in the liquid state. The pressure of the imprinting can be within the range of 100 to 500 psi.
摘要翻译： 提供了通过压印在基板上形成特征的方法。 该方法包括：（a）形成包含至少一种溶解在至少一种可聚合单体中的聚合物的聚合物溶液; 和（b）将聚合物溶液沉积在基底上以在其上形成液膜; 然后：（c）通过使单体聚合并任选地交联聚合物从而形成聚合物膜来固化液膜，所述聚合物膜具有玻璃化转变温度（Tg）; 并用具有所需图案的模具印刷聚合物膜，以在聚合物膜中形成相应的负图案，或（d）用模具印刷液膜并固化以形成聚合物膜。 压印温度比Tg高出10℃，或者如果薄膜处于液体状态，则其温度更低。 压印的压力可以在100-500psi的范围内。
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