公开(公告)号：US20090224302A1

公开(公告)日：2009-09-10

申请号：US12043429

申请日：2008-03-06

申请人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

发明人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

IPC分类号： H01L29/94 ,  H01L21/8238

CPC分类号： H01L27/0733 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

摘要翻译： 具有固有电容的半导体器件及其制造方法。 半导体器件在控制电极和第一电极之间具有固有的反馈电容。 此外，半导体器件在第一电极和第二电极之间具有固有的漏极 - 源极电容。 至少一个单片集成附加电容与固有反馈电容并联连接，或与固有漏 - 源电容并联连接。 附加电容包括与第一电容器表面相对的第一电容器表面和第二电容器表面。 电容器表面是半导体器件的前侧上的半导体器件的结构化导电层，介电层位于其之间，并形成至少一个附加电容器。

公开(公告)号：US20090166729A1

公开(公告)日：2009-07-02

申请号：US11965387

申请日：2007-12-27

申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage.

摘要翻译： 公开了一种具有轻掺杂漂移和缓冲层的功率半导体元件。 一个实施例具有在第一导电类型的深阱区之下并且在第二导电类型的轻掺杂漂移和缓冲层之间并且在深阱区之间。 漂移和缓冲层在半导体衬底的相邻表面上的漏极接触层和最深阱区的底部之间具有至少等于深阱区域之间的最小横向距离的最小垂直延伸。 也可以确定垂直延伸，使得漂移缓冲层中的每单位面积的掺杂剂的总量大于击穿电压时的击穿电荷量。

公开(公告)号：US20090085064A1

公开(公告)日：2009-04-02

申请号：US11862661

申请日：2007-09-27

申请人： Michael Rueb ,  Michael Treu ,  Armin Willmeroth ,  Franz Hirler

发明人： Michael Rueb ,  Michael Treu ,  Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/778 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41775 ,  H01L29/66068

摘要： A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate. The first and second semiconductor regions are spaced in the first semiconductor substrate from each other in a direction parallel to the first plane by a first distance which is arranged in an area proximate to the heterojunction and which is larger than a second distance which is arranged in an area distal to the heterojunction.

摘要翻译： 半导体器件包括第一带隙材料的第一半导体衬底和第二带隙材料的第二半导体衬底。 第二带隙材料具有比第一带隙材料低的带隙。 基本上在第一平面中在第一半导体衬底和第二半导体衬底之间形成异质结。 所述半导体器件还包括垂直于所述第一平面的横截面，所述第一导电类型的第一半导体区域和所述第一导电类型的第二半导体区域从所述第二半导体衬底至少部分地延伸 进入第一半导体衬底。 第一和第二半导体区域在第一半导体衬底中沿平行于第一平面的方向彼此间隔开第一距离，第一距离布置在接近异质结的区域中，并且大于第二距离 远离异质结的区域。

公开(公告)号：US20090057713A1

公开(公告)日：2009-03-05

申请号：US11848776

申请日：2007-08-31

申请人： Franz Hirler

发明人： Franz Hirler

IPC分类号： H01L29/739 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor body includes a drift zone of a first conduction type. A body zone of a second conduction type complementary to the first conduction type is located near the surface in the semiconductor body. The semiconductor body includes a near-surface field stop zone of the second complementary conduction type and doped more lightly than the body zone.

摘要翻译： 半导体本体包括第一导电类型的漂移区。 与第一导电类型互补的第二导电类型的体区位于半导体本体中的表面附近。 半导体本体包括第二互补导电类型的近表面场阻挡区，并且比身体区更加轻掺杂。

公开(公告)号：US20080067626A1

公开(公告)日：2008-03-20

申请号：US11834154

申请日：2007-08-06

申请人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

发明人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

IPC分类号： H01L29/94 ,  H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/3247 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/66621 ,  H01L29/7803 ,  H01L29/7804

摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.

摘要翻译： 一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。 在表面上方和第一沟槽部分之上产生半导体层。 在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。

公开(公告)号：US20070210410A1

公开(公告)日：2007-09-13

申请号：US11683788

申请日：2007-03-08

申请人： Franz Hirler ,  Holger Kapels

发明人： Franz Hirler ,  Holger Kapels

IPC分类号： H01L29/00

CPC分类号： H01L29/0619 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7393 ,  H01L29/7811

摘要： A semiconductor component has a drift path (4) in a semiconductor body (5) of a semiconductor chip (6). The semiconductor component has an edge area (7) and a cell area (8), which is surrounded by the edge area (7). A trench structure (9), which surrounds the semiconductor component (6) in the edge area (7), is arranged in the edge area (7) of the semiconductor component (6). At least the trench walls (10) are covered by an insulation material (11). The trench structure (9) which surrounds the semiconductor component (6) has overlapping trench zones (12) with semiconductor material (13) arranged between them.

摘要翻译： 半导体元件在半导体芯片（6）的半导体本体（5）中具有漂移路径（4）。 半导体部件具有由边缘区域（7）包围的边缘区域（7）和单元区域（8）。 在边缘区域（7）中围绕半导体部件（6）的沟槽结构（9）布置在半导体部件（6）的边缘区域（7）中。 至少沟槽壁（10）被绝缘材料（11）覆盖。 围绕半导体部件（6）的沟槽结构（9）具有重叠的沟槽区域（12），其间布置有半导体材料（13）。

公开(公告)号：US20070108511A1

公开(公告)日：2007-05-17

申请号：US11543732

申请日：2006-10-05

申请人： Franz Hirler

发明人： Franz Hirler

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

摘要： A semiconductor structure has a substrate with a first main surface and a second main surface, the substrate comprising a gate electrode region, a channel region, wherein a conductive channel can be generated, and a gate electrode insulation between the gate electrode region and the channel region. Further, a field electrode region with a curved external surface is provided for increasing a breakdown voltage of the semiconductor structure, wherein the field electrode region has an extension in every direction in parallel to the first main surface, which is lower than a maximum extension in the one direction perpendicular to the second main surface.

摘要翻译： 半导体结构具有具有第一主表面和第二主表面的衬底，所述衬底包括栅电极区，沟道区，其中可以产生导电沟道，以及栅极电极区域和沟道之间的栅电极绝缘 地区。 此外，提供具有弯曲外表面的场电极区域，用于增加半导体结构的击穿电压，其中场电极区域在与第一主表面平行的每个方向上延伸，其低于最大延伸 垂直于第二主表面的一个方向。

公开(公告)号：US20070099373A1

公开(公告)日：2007-05-03

申请号：US11638612

申请日：2006-12-13

申请人： Franz Hirler ,  Helmut Strack

发明人： Franz Hirler ,  Helmut Strack

IPC分类号： H01L21/8238

CPC分类号： H01L29/7802 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/1604 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/7813

摘要： To attain a comparatively high breakdown voltage at a high avalanche strength and with the physical size simultaneously being as small as possible, the invention proposes constructing a transistor device in a semiconductor material region in which a first source/drain region is used as a source region and in which the source region has a comparatively reduced surface charge or surface charge density.

摘要翻译： 为了在高雪崩强度下获得相当高的击穿电压并且物理尺寸同时尽可能小，本发明提出在其中使用第一源极/漏极区域作为源极区域的半导体材料区域中构造晶体管器件 并且其中源区具有相对减小的表面电荷或表面电荷密度。

公开(公告)号：US07211860B2

公开(公告)日：2007-05-01

申请号：US10857353

申请日：2004-05-28

申请人： Markus Zundel ,  Franz Hirler

发明人： Markus Zundel ,  Franz Hirler

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7811 ,  H01L29/7831

摘要： In the case of the semiconductor component (1) according to the invention, the source regions (S), the body regions (B) and, if appropriate, the body contact regions (Bk) are in each case arranged in mesa regions (M) of adjacent trenches (30). In the edge region (R) of the cell array (Z) the insulation (GOX, FOX) of the underlying trench structures (30) by an insulating oxide layer (FOX) is comparatively thick and formed in the form of a field oxide (FOX) or thick oxide (FOX).

摘要翻译： 在根据本发明的半导体部件（1）的情况下，源极区域（S），主体区域（B）以及适当时的体接触区域（Bk）分别布置在台面区域（M ）相邻的沟槽（30）。 在单元阵列（Z）的边缘区域（R）中，通过绝缘氧化物层（FOX）的下面的沟槽结构（30）的绝缘（GOX，FOX）相对较厚并且形成为场氧化物 FOX）或厚氧化物（FOX）。

公开(公告)号：US20060209586A1

公开(公告)日：2006-09-21

申请号：US11361045

申请日：2006-02-23

申请人： Franz Hirler

发明人： Franz Hirler

IPC分类号： G11C11/24

CPC分类号： H01L29/7811 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/7813

摘要： A semiconductor component has a semiconductor body in which a trench structure is provided. An electrode structure embedded in the trench structure is at least partly insulated from its surroundings by an insulation structure, and is contact-connected in a contact-connecting region via a contact hole that penetrates through an upper region of the insulation structure. The semiconductor component has at least two trenches running next to one another, at least one of said trenches containing a part of the electrode structure. The trenches are oriented so that at least the regions of the insulation structure which are provided in the upper region of the trenches overlap one another in an overlap region. The contact hole is arranged above the at least two trenches in such a way that at least parts of the overlap region and at least one of the electrode structure parts are contact-connected via the contact hole.

摘要翻译： 半导体部件具有设置沟槽结构的半导体主体。 嵌入沟槽结构中的电极结构通过绝缘结构至少部分地与其周围绝缘，并且经由穿过绝缘结构的上部区域的接触孔在接触连接区域中接触连接。 半导体部件具有彼此相邻的至少两个沟槽，所述沟槽中的至少一个包含电极结构的一部分。 沟槽被定向成使得至少设置在沟槽的上部区域中的绝缘结构的区域在重叠区域中彼此重叠。 接触孔布置在至少两个沟槽上方，使得重叠区域的至少一部分和至少一个电极结构部分经由接触孔接触连接。