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51.发明授权公开(公告)号：US08506530B2
公开(公告)日：2013-08-13
申请号：US11897299
申请日：2007-08-29
IPC分类号： A61M5/00
CPC分类号： A61B17/205 , A61B2090/037 , A61M37/0015 , A61M2037/003 , A61M2037/0046 , A61M2037/0053
摘要： An array for placement on the skin of a human or animal patient for the purpose of the transdermal application of pharmaceuticals, toxins or active agents, having microneedles that are situated on a carrier substrate, the microneedles having a preset breaking point in the area of the transition to the carrier substrate.
摘要翻译： 用于放置在人或动物患者的皮肤上的阵列，用于透皮施用具有位于载体基底上的微针的药物，毒素或活性剂的目的，微针在该区域中具有预设的断点 过渡到载体基底。
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52.发明授权Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type 失效具有改性表面性质的硅衬底的制造方法和所述类型的硅衬底公开(公告)号：US08492850B2
公开(公告)日：2013-07-23
申请号：US12308200
申请日：2007-04-27
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L27/088
CPC分类号： H01L21/02008 , H01L21/02381 , H01L21/02529 , H01L21/02573 , H01L21/02601 , H01L21/02612 , H01L21/02656 , H01L21/02658 , H01L21/02667 , H01L33/346
摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要翻译： 一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔， 要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底 配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。
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53.发明授权Method for manufacturing separated micromechanical components situated on a silicon substrate and components manufactured therefrom 有权用于制造位于硅衬底上的分离的微机械部件的方法及由其制造的部件公开(公告)号：US08466042B2
公开(公告)日：2013-06-18
申请号：US12994092
申请日：2009-04-03
IPC分类号： H01L21/301
CPC分类号： G01L9/0042 , B81C1/00888 , B81C2201/017 , H01L21/3065 , H01L21/30655 , H04R19/005 , H04R31/006
摘要： A method for manufacturing separated micromechanical components situated on a silicon substrate includes the following steps of a) providing separation trenches on the substrate via an anisotropic plasma deep etching method, b) irradiating the area of the silicon substrate which forms the base of the separation trenches using laser light, the silicon substrate being converted from a crystalline state into an at least partially amorphous state by the irradiation in this area, and c) inducing mechanical stresses in the substrate. In one specific embodiment, cavities are etched simultaneously with the etching of the separation trenches. The etching depths can be controlled via the RIE lag effect.
摘要翻译： 一种制造位于硅衬底上的分离的微机械部件的方法包括以下步骤：a）通过各向异性等离子体深刻蚀方法在衬底上提供分离槽，b）照射形成分离槽底部的硅衬底区域 使用激光，硅衬底通过在该区域中的照射从结晶状态转变为至少部分非晶态，以及c）在衬底中引起机械应力。 在一个具体实施例中，在蚀刻分离沟槽的同时蚀刻空腔。 蚀刻深度可以通过RIE滞后效应来控制。
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54.发明授权Device and method for producing chlorine trifluoride and system for etching semiconductor substrates using this device 有权用于制造三氟化氯的装置和方法以及使用该装置蚀刻半导体衬底的系统公开(公告)号：US08382940B2
公开(公告)日：2013-02-26
申请号：US10519724
申请日：2003-03-27
申请人： Franz Laermer
发明人： Franz Laermer
CPC分类号： H01J37/321 , B01J19/088 , B01J2219/0894 , C01B7/24 , H01L21/3065 , H05H1/46 , H05H2001/4667
摘要： A device (6) and a method for generating chlorine trifluoride is described, a high-density plasma (105) being generated in the interior of a plasma reactor (100) using plasma generating means (110, 120, 130, 150, 155, 160, 170, 180), and a first gas and a second gas, which react with one another under the influence of the high-density plasma (105) in the plasma reactor (100) under the formation of chlorine trifluoride, being supplied to the plasma reactor (100) via gas supply means (21, 22, 25, 26). In addition, a gas outlet (20) is provided, via which the generated chlorine trifluoride can be removed from the plasma reactor (100). Finally, a system (5) for etching semiconductor substrates (30), silicon wafers in particular, is described including such an upstream device (6), the system (5) having a process chamber (10) which is connected to the plasma reactor (100) via the gas outlet (20), and the semiconductor substrate (30) being situated in the process chamber (10) and exposed to the gaseous chlorine trifluoride generated by the device (6).
摘要翻译： 本发明描述了一种用于产生三氟化氯的装置（6）和产生三氟化氯的方法，在等离子体反应器（100）的内部使用等离子体产生装置（110,120,130,150,155， 160,170,180），以及第一气体和第二气体，其在等离子体反应器（100）中形成的三氟化氯的高密度等离子体（105）的作用下彼此反应，供给至 所述等离子体反应器（100）经由气体供应装置（21,22,25,26）。 此外，设置有气体出口（20），通过该气体出口（20）可以从等离子体反应器（100）中除去产生的三氟化氯。 最后，描述了一种用于蚀刻半导体衬底（30）的系统（5），特别是硅晶片，其包括这种上游装置（6），该系统（5）具有处理室（10），其连接到等离子体反应器 （100），并且所述半导体衬底（30）位于所述处理室（10）中并暴露于由所述装置（6）产生的气态三氟化氯。
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公开(公告)号：US08182707B2
公开(公告)日：2012-05-22
申请号：US11658461
申请日：2005-07-01
CPC分类号： H01L21/32137 , B81C1/00476 , B81C1/00595 , H01L21/3065 , H01L21/30655
摘要： A method for etching a layer that is to be removed on a substrate, in which a Si1-xGex layer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF3. The etching behavior of the Si1-xGex layer can be controlled via the Ge portion in the Si1-xGex layer. The etching method is particularly well-suited for manufacturing self-supporting structures in a micromechanical sensor and for manufacturing such self-supporting structures in a closed hollow space, because the Si1-xGex layer, as a sacrificial layer or filling layer, is etched highly selectively relative to silicon.
摘要翻译： 在蚀刻气体辅助下，在气相蚀刻中至少在区域中蚀刻要除去的层的方法，其中Si1-xGex层是要去除的层，Si1-xGex层被去除的层， ，特别是ClF3。 可以通过Si1-xGex层中的Ge部分来控制Si1-xGex层的蚀刻行为。 蚀刻方法特别适用于在微机械传感器中制造自支撑结构，并且在封闭的中空空间中制造这种自支撑结构，因为作为牺牲层或填充层的Si1-xGex层被高度蚀刻 选择性地相对于硅。
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公开(公告)号：US08164174B2
公开(公告)日：2012-04-24
申请号：US10416140
申请日：2001-10-10
申请人： Franz Laermer
发明人： Franz Laermer
IPC分类号： H01L23/48
CPC分类号： B81B7/0064 , H01L2924/0002 , H01L2924/00
摘要： A microstructure component, in particular an encapsulated micromechanical sensor element, including at least one microstructure patterned out from a silicon layer being encapsulated by a glass element. At least the region of the glass element covering the microstructure is furnished with an electrically conductive coating on its side facing the microstructure.
摘要翻译： 微结构组件，特别是包封的微机械传感器元件，其包括由玻璃元件封装的由硅层图案化的至少一个微结构。 至少覆盖微结构的玻璃元件的区域在其面向微结构的一侧配备有导电涂层。
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公开(公告)号：US20120076339A1
公开(公告)日：2012-03-29
申请号：US13147116
申请日：2010-01-15
申请人： Thomas Buck , Franz Laermer
发明人： Thomas Buck , Franz Laermer
IPC分类号： H04R3/00
CPC分类号： H04R3/007 , H04R19/016
摘要： A system and method are described for reducing the current consumption of a microphone component without adversely affecting performance. The system includes a micromechanical microphone capacitor, an acoustically inactive compensation capacitor, an arrangement for applying a high-frequency sampling signal to the microphone capacitor and for applying the inverted sampling signal to the compensation capacitor, an integrating operational amplifier which integrates the sum of the current flow through the microphone capacitor and the current flow through the compensation capacitor as a charge amplifier, a demodulator, which is synchronized with the sampling signal, for the output signal of the integrating operational amplifier, and a low-pass filter which uses the output signal of the demodulator to obtain a microphone signal that corresponds to the changes in capacitance of the microphone capacitor. The sampling signal is composed of a periodic sequence of sampling pulses and pause times. In addition, at least one first switching element is provided which reduces the current flow through the integrating operational amplifier during the pause times. The low-pass filter has a “sample-and-hold” characteristic so that during the pause times the low-pass filter in each case stores the output signal of the integrating operational amplifier averaged over the preceding sampling operation.
摘要翻译： 描述了一种用于减少麦克风组件的电流消耗而不会不利地影响性能的系统和方法。 该系统包括微机械麦克风电容器，声学无效补偿电容器，用于向麦克风电容器施加高频采样信号并将反相采样信号施加到补偿电容器的装置，积分运算放大器，其将 通过麦克风电容器的电流流过作为电荷放大器的补偿电容器的电流，与采样信号同步的解调器，用于积分运算放大器的输出信号，以及使用该输出的低通滤波器 解调器的信号以获得对应于麦克风电容器的电容变化的麦克风信号。 采样信号由采样脉冲和暂停时间的周期序列组成。 此外，提供至少一个第一开关元件，其在暂停时间期间减少通过积分运算放大器的电流。 低通滤波器具有“采样和保持”特性，使得在暂停时间期间，低通滤波器在每种情况下存储在先前采样操作上平均的积分运算放大器的输出信号。
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58.发明申请公开(公告)号：US20110163398A1
公开(公告)日：2011-07-07
申请号：US12994092
申请日：2009-04-03
CPC分类号： G01L9/0042 , B81C1/00888 , B81C2201/017 , H01L21/3065 , H01L21/30655 , H04R19/005 , H04R31/006
摘要： A method for manufacturing separated micromechanical components situated on a silicon substrate includes the following steps of a) providing separation trenches on the substrate via an anisotropic plasma deep etching method, b) irradiating the area of the silicon substrate which forms the base of the separation trenches using laser light, the silicon substrate being converted from a crystalline state into an at least partially amorphous state by the irradiation in this area, and c) inducing mechanical stresses in the substrate. In one specific embodiment, cavities are etched simultaneously with the etching of the separation trenches. The etching depths can be controlled via the RIE lag effect.
摘要翻译： 一种制造位于硅衬底上的分离的微机械部件的方法包括以下步骤：a）通过各向异性等离子体深刻蚀方法在衬底上提供分离槽，b）照射形成分离槽底部的硅衬底区域 使用激光，硅衬底通过在该区域中的照射从结晶状态转变为至少部分非晶态，以及c）在衬底中引起机械应力。 在一个具体实施例中，在蚀刻分离沟槽的同时蚀刻空腔。 蚀刻深度可以通过RIE滞后效应来控制。
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公开(公告)号：US20110034873A1
公开(公告)日：2011-02-10
申请号：US12811936
申请日：2008-12-17
CPC分类号： F04B43/043 , F04B19/006
摘要： A method for manufacturing a micropump, which may be for the metered delivery of insulin, multiple layers being situated on the front side of a first carrier layer, which has a front side and a rear side, and microfluidic functional elements being formed by structuring at least one of the layers. It is provided that the structuring of the at least one layer for manufacturing all microfluidic functional elements is exclusively performed by front side structuring. Furthermore, a micropump is disclosed.
摘要翻译： 一种制造微型泵的方法，其可用于计量输送胰岛素，多层位于具有前侧和后侧的第一载体层的正面上，微流体功能元件通过在 至少一层。 提供用于制造所有微流控功能元件的至少一层的结构化仅通过前端结构进行。 此外，公开了一种微型泵。
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公开(公告)号：US20100127339A1
公开(公告)日：2010-05-27
申请号：US12312165
申请日：2007-09-10
申请人： Franz Laermer , Silvia Kronmueller , Tino Fuchs
发明人： Franz Laermer , Silvia Kronmueller , Tino Fuchs
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/112 , B81C2203/0109 , B81C2203/031
摘要： A micromechanical component, having a substrate and a functional element, the functional element having a functional surface which has an anti-adhesion layer, that has been applied at least in regions, for reducing the surface adhesion forces, and in which the anti-adhesion layer is stable to a temperature of more than 800° C.
摘要翻译： 具有基材和功能元件的微机械部件具有功能性表面，该功能性表面具有抗粘附层，该功能性表面至少在区域中被应用于减少表面粘附力，其中抗粘附性 层对于超过800℃的温度是稳定的
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