公开(公告)号：US11652142B2

公开(公告)日：2023-05-16

申请号：US17482374

申请日：2021-09-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mankyu Yang ,  Richard Taylor, III ,  Alexander Derrickson ,  Alexander Martin ,  Jagar Singh ,  Judson Robert Holt ,  Haiting Wang

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/735 ,  H01L29/10

CPC classification number: H01L29/0804 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/6625 ,  H01L29/735

Abstract: A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.

公开(公告)号：US20230075062A1

公开(公告)日：2023-03-09

申请号：US17525236

申请日：2021-11-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Jagar Singh

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/735 ,  H01L29/737 ,  H01L29/40

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer having a top surface and a side surface, a second terminal having a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The structure further includes a contact positioned to overlap with the top surface and the side surface of the first raised semiconductor layer.

公开(公告)号：US20230069207A1

公开(公告)日：2023-03-02

申请号：US17524043

申请日：2021-11-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander Derrickson ,  Judson R. Holt ,  Haiting Wang ,  Jagar Singh ,  Vibhor Jain

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/735 ,  H01L29/737

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes an emitter having a raised portion, a collector having a raised portion, and a base having a base layer and an extrinsic base layer stacked with the base layer. The base layer and the extrinsic base layer are positioned in a lateral direction between the raised portion of the emitter and the raised portion of the collector, the base layer has a first width in the lateral direction, the extrinsic base layer has a second width in the lateral direction, and the second width is greater than the first width.

公开(公告)号：US20230067486A1

公开(公告)日：2023-03-02

申请号：US17525256

申请日：2021-11-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alexander Derrickson ,  Vibhor Jain ,  Judson R. Holt ,  Jagar Singh ,  Mankyu Yang

IPC: H01L29/08 ,  H01L29/735 ,  H01L29/737 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor with gated collector and methods of manufacture. The structure includes: an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical sidewall spacers on opposing sidewalls of the extrinsic base region; a collector region on the semiconductor substrate and separated from the extrinsic base region by at least a first spacer of the asymmetrical sidewall spacers; and an emitter region on the semiconductor substrate and separated from the extrinsic base region by a second spacer of the asymmetrical sidewall spacers.

公开(公告)号：US20230061482A1

公开(公告)日：2023-03-02

申请号：US17455290

申请日：2021-11-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Jagar Singh ,  Zhenyu Hu ,  John J. Pekarik

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/735 ,  H01L29/737 ,  H01L29/66 ,  H01L29/40

Abstract: The disclosure provides a lateral bipolar transistor structure with a base layer over a semiconductor buffer, and related methods. A lateral bipolar transistor structure may include an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A semiconductor buffer is adjacent the insulator. A base layer is on the semiconductor buffer and adjacent the E/C layer, the base layer including a lower surface below the E/C layer and an upper surface above the E/C layer. The base layer has a second doping type opposite the first doping type.

公开(公告)号：US20230061156A1

公开(公告)日：2023-03-02

申请号：US17687741

申请日：2022-03-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ali Razavieh ,  Jagar Singh ,  Haiting Wang

IPC: H01L29/735 ,  H01L29/10 ,  H01L29/66 ,  H01L29/08 ,  H01L29/73

Abstract: A disclosed structure includes a fin-based bipolar junction transistor (BJT) with reduced base resistance. The BJT includes one or more semiconductor fins. Each semiconductor fin has opposing sidewalls, a first width, and a base recess, which extends across the first width through the opposing sidewalls. The BJT includes a base region positioned laterally between collector and emitter regions. The base region includes a base semiconductor layer (e.g., an intrinsic base layer), which fills the base recess and which has a second width greater than the first width such that the base semiconductor layer extends laterally beyond the opposing sidewalls. In a BJT with multiple semiconductor fins, the base recess on each semiconductor fin is filled with a discrete base semiconductor layer. The base region further includes an additional base semiconductor layer (e.g., an extrinsic base layer) covering the base semiconductor layer(s). Also disclosed is a method of forming the structure.

公开(公告)号：US11588044B2

公开(公告)日：2023-02-21

申请号：US17109464

申请日：2020-12-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Alexander M. Derrickson ,  Mankyu Yang ,  Richard F. Taylor, III ,  Jagar Singh ,  Alexander L. Martin

IPC: H01L29/739 ,  H03K17/60 ,  H01L29/10 ,  H01L29/06

Abstract: Embodiments of the disclosure provide a bipolar junction transistor (BJT) structure and related method. A BJT according to the disclosure may include a base over a semiconductor substrate. A collector is over the semiconductor substrate and laterally abuts a first horizontal end of the base. An emitter is over the semiconductor substrate and laterally abuts a second horizontal end of the base opposite the first horizontal end. A horizontal interface between the emitter and the base is smaller than a horizontal interface between the collector and the base.

公开(公告)号：US11462648B2

公开(公告)日：2022-10-04

申请号：US16704002

申请日：2019-12-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar Singh ,  Srikanth Balaji Samavedam

IPC: H01L29/87 ,  H01L29/66 ,  H01L29/872

Abstract: One illustrative Schottky diode disclosed herein includes a semiconductor substrate, an anode region and a cathode region. The anode region includes a plurality of first fins with a first vertical height formed in the anode region, wherein an upper surface of the semiconductor substrate is exposed within the anode region. The cathode region includes a plurality of second fins with a second vertical height that is greater than the first vertical height. The device also includes a conductive structure that contacts and engages at least an upper surface of the plurality of first fins in the anode region.

公开(公告)号：US20220173230A1

公开(公告)日：2022-06-02

申请号：US17109464

申请日：2020-12-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Alexander M. Derrickson ,  Mankyu Yang ,  Richard F. Taylor, III ,  Jagar Singh ,  Alexander L. Martin

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H03K17/60

Abstract: Embodiments of the disclosure provide a bipolar junction transistor (BJT) structure and related method. A BJT according to the disclosure may include a base over a semiconductor substrate. A collector is over the semiconductor substrate and laterally abuts a first horizontal end of the base. An emitter is over the semiconductor substrate and laterally abuts a second horizontal end of the base opposite the first horizontal end. A horizontal interface between the emitter and the base is smaller than a horizontal interface between the collector and the base.

公开(公告)号：US11195947B2

公开(公告)日：2021-12-07

申请号：US16662276

申请日：2019-10-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar Singh ,  Luigi Pantisano ,  Anvitha Shampur ,  Frank Scott Johnson ,  Srikanth Balaji Samavedam

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092 ,  H01L21/761 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/06

Abstract: A semiconductor device is disclosed including a semiconductor layer, a first well doped with dopants of a first conductivity type defined in the semiconductor layer, a second well doped with dopants of a second conductivity type different than the first conductivity type defined in the semiconductor layer adjacent the first well to define a PN junction between the first and second wells, and an isolation structure positioned in the second well. The semiconductor device also includes a first source/drain region positioned in the first well, a second source/drain region positioned in the second well adjacent a first side of the isolation structure, a doped region positioned in the second well adjacent a second side of the isolation structure, and a gate structure positioned above the semiconductor layer, wherein the gate structure vertically overlaps a portion of the doped region.