公开(公告)号：US20180294622A1

公开(公告)日：2018-10-11

申请号：US15483678

申请日：2017-04-10

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/30 ,  H01S5/02 ,  H01S5/026 ,  H01S5/068 ,  H01S5/065 ,  H01S5/10

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

公开(公告)号：US20180261978A1

公开(公告)日：2018-09-13

申请号：US15335909

申请日：2016-10-27

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/34 ,  H01S5/065 ,  H01S5/06 ,  H01S5/50 ,  H01S5/068

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.

公开(公告)号：US09927572B1

公开(公告)日：2018-03-27

申请号：US15397903

申请日：2017-01-04

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Zhihong Huang ,  Raymond G Beausoleil

IPC: G02B6/12

CPC classification number: G02B6/12004 ,  G02B6/12002 ,  G02B2006/12061 ,  G02B2006/12121 ,  G02B2006/12123

Abstract: Examples include hybrid silicon photonic device structures. Some examples include a method of integrating a photodetector with a photonic device on a silicon wafer to make a hybrid silicon photonic device structure. A dielectric layer is established on the silicon wafer. A pit is formed in a portion of the dielectric layer and the silicon wafer, wherein a bottom of the pit is silicon. A germanium layer is grown in the pit such that a top of the germanium layer is lower than a top of the silicon wafer. The germanium layer comprises the photodetector. A photonic device material that comprises the photonic device is bonded to the silicon wafer without planarization of the silicon wafer.

公开(公告)号：US20170317466A1

公开(公告)日：2017-11-02

申请号：US15141948

申请日：2016-04-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Xue Huang ,  Di Liang

IPC: H01S5/026 ,  H01S5/06 ,  H01L29/94 ,  H01L29/78 ,  H01L29/51 ,  H01S5/30 ,  H01L29/423

CPC classification number: H01L29/78 ,  H01L29/513 ,  H01L29/66181 ,  H01L29/94 ,  H01S5/0215 ,  H01S5/0614

Abstract: An example device in accordance with an aspect of the present disclosure includes at least one dielectric layer sandwiched between first and second layers, to provide a dielectric characteristic for the device. At least one interface layer, disposed between the at least one dielectric layer and at least one of i) the first layer, and ii) the second layer, is to serve as bond enhancement between the at least one dielectric layer and other layers.

公开(公告)号：US20160336708A1

公开(公告)日：2016-11-17

申请号：US15110429

申请日：2014-02-28

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang

IPC: H01S3/083 ,  H01S3/063 ,  H01S3/102

CPC classification number: H01S3/083 ,  G02B6/29341 ,  H01S3/0637 ,  H01S3/102 ,  H01S3/1028 ,  H01S5/1021 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1071 ,  H01S5/1225 ,  H01S5/142

Abstract: An example device in accordance with an aspect of the present disclosure includes a ring waveguide and bus waveguide. The ring waveguide has a first coupled portion associated with a first modal index, and the bus waveguide includes a second coupled portion associated with a second modal index. The second coupled portion is evanescently coupleable to the first coupled portion. A laser outcoupling and associated lasing output of the device is variable based on varying a difference between the first modal index and the second modal index to vary coupling between the first coupled portion and the second coupled portion, without varying modal indices of non-coupled portions of the ring waveguide and bus waveguide.

Abstract translation: 根据本公开的一个方面的示例性装置包括环形波导和总线波导。 环形波导具有与第一模态指数相关联的第一耦合部分，并且总线波导包括与第二模态指数相关联的第二耦合部分。 第二耦合部分ev逝地耦合到第一耦合部分。 基于改变第一模态指数和第二模态指数之间的差异来改变装置的激光输出耦合和相关联的激光输出，以改变第一耦合部分和第二耦合部分之间的耦合，而不改变非耦合部分的模态指数 的环形波导和总线波导。

公开(公告)号：US12013568B2

公开(公告)日：2024-06-18

申请号：US17695673

申请日：2022-03-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Yuan Yuan ,  Di Liang ,  Raymond G. Beausoleil

IPC: G02B6/12 ,  G02F1/025 ,  H01S5/026

CPC classification number: G02B6/12004 ,  G02F1/025 ,  H01S5/026 ,  G02B2006/12061

Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

公开(公告)号：US11886020B2

公开(公告)日：2024-01-30

申请号：US17305892

申请日：2021-07-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Sudharsanan Srinivasan ,  Di Liang ,  Zhihong Huang

IPC: G02B6/42

CPC classification number: G02B6/4201

Abstract: Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.

公开(公告)号：US11876345B2

公开(公告)日：2024-01-16

申请号：US17015001

申请日：2020-09-08

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang ,  Chih C. Shih ,  Kevin B. Leigh ,  Geza Kurczveil ,  Marco Fiorentino

IPC: H01S5/024 ,  H01S5/0237 ,  H01S5/0239 ,  H01S5/187 ,  H01S5/40 ,  H01S5/00

CPC classification number: H01S5/02469 ,  H01S5/0237 ,  H01S5/0239 ,  H01S5/02476 ,  H01S5/187 ,  H01S5/0085 ,  H01S5/4025

Abstract: Techniques and systems for a semiconductor laser, namely a grating-coupled surface-emitting (GCSE) comb laser, having thermal management for facilitating dissipation of heat, integrated thereon. The thermal management is structured in manner that prevents deformation or damage to the GCSE laser chips included in the semiconductor laser implementation. The disclosed thermal management elements integrated in the laser can include: heat sinks; support bars; solder joints; thermal interface material (TIM); silicon vias (TSV); and terminal conductive sheets. Support bars, for example, having the GCSE laser chip positioned between the bars and having a height that is higher than a thickness of the GCSE laser chip. Accordingly, the heat sink can be placed on top of the support bars such that heat is dissipated from the GCSE laser chip, and the heat sink is separated from directed contact with the GCSE laser chip due to the height of the support bars.

公开(公告)号：US20230296831A1

公开(公告)日：2023-09-21

申请号：US17695673

申请日：2022-03-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Yuan Yuan ,  Di Liang ,  Raymond G. Beausoleil

IPC: G02B6/12 ,  G02F1/025 ,  H01S5/026

CPC classification number: G02B6/12004 ,  G02F1/025 ,  H01S5/026 ,  G02B2006/12061

Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

公开(公告)号：US11726264B2

公开(公告)日：2023-08-15

申请号：US17648250

申请日：2022-01-18

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Di Liang

IPC: G02B6/12 ,  G02B6/293 ,  H01L31/107

CPC classification number: G02B6/29338 ,  G02B6/12004 ,  G02B6/2934 ,  G02B6/29335 ,  H01L31/107 ,  G02B6/12019 ,  G02B2006/12123

Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.