公开(公告)号：US06200822B1

公开(公告)日：2001-03-13

申请号：US09269007

申请日：1999-06-17

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp

IPC分类号： H01L2100

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01L21/30655 ,  H01L22/26

摘要： A method for detecting the transition between different materials in semiconductor structures during alternating etching and covering steps for anisotropic depthwise etching of defined patterns performed using a plasma. Provision is made for ascertaining, by way of an intensity measurement of at least one specific substance contained in the plasma, the beginning of each etching step by the fact that a characteristic threshold is reached, this also being achievable by way of an external synchronization signal which indicates the beginning and end of each etching step; for then, when the threshold value is reached, starting a delay time which is longer than the course of a first concentration maximum; for a second concentration maximum then to be ascertained after the delay time has elapsed; and for the second concentration maxima of the etching steps to be monitored as to whether they exceed or fall below the predefined value, in order to detect a material transition.

摘要翻译： 一种用于在交替蚀刻期间检测半导体结构中的不同材料之间的转变的方法以及使用等离子体进行的限定图案的各向异性深度蚀刻的覆盖步骤。 提供了通过对等离子体中包含的至少一种特定物质的强度测量来确定通过达到特征阈值的事实开始每个蚀刻步骤，这也可以通过外部同步信号来实现 其表示每个蚀刻步骤的开始和结束; 然后，当达到阈值时，启动比第一浓度最大值的过程更长的延迟时间; 对于第二浓度最大值，然后在延迟时间过去之后确定; 并且为了监测蚀刻步骤的第二浓度最大值是否超过或低于预定值，为了检测材料转变。

公开(公告)号：US09032608B2

公开(公告)日：2015-05-19

申请号：US13061919

申请日：2009-07-08

申请人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

发明人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

IPC分类号： B23P21/00 ,  B60C23/04 ,  H02N2/18 ,  H01L41/25 ,  H01L41/313

CPC分类号： B60C23/0411 ,  H01L41/25 ,  H01L41/313 ,  H02N2/18 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49128 ,  Y10T29/49169 ,  Y10T29/49828 ,  Y10T29/49904

摘要： In a method for manufacturing at least one mechanical-electrical energy conversion system including multiple individual parts, and a mechanical-electrical energy conversion, multiple different individual parts are positioned in an assembly device and joined in joining areas assigned to the individual parts in the assembly device, the individual parts including at least one piezoelectric element, one support structure and one seismic mass.

摘要翻译： 在用于制造至少一个包括多个独立部件的机电能转换系统和机电能转换的方法中，将多个不同的单独部件定位在组装装置中并且连接到分配给组件中的各个部件的接合区域 装置，各个部件包括至少一个压电元件，一个支撑结构和一个地震块。

公开(公告)号：US08671746B2

公开(公告)日：2014-03-18

申请号：US13202561

申请日：2010-01-11

申请人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

发明人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

IPC分类号： G01M17/02

CPC分类号： B60C23/041 ,  H01L41/1134

摘要： A piezoelectric generator includes a piezoelectric element, a spring element, a mass element, and at least one stop. The piezoelectric element, the spring element, and the mass element form a system which can oscillate. The stop limits the oscillation of the system which can oscillate, at least on one side. The stop is formed from a ductile material or has a coating of a ductile material.

摘要翻译： 压电发电机包括压电元件，弹簧元件，质量元件和至少一个止动件。 压电元件，弹簧元件和质量元件形成可振荡的系统。 停止限制系统的振荡，该系统至少可以在一侧振荡。 止动件由延性材料形成或具有延性材料的涂层。

公开(公告)号：US08506530B2

公开(公告)日：2013-08-13

申请号：US11897299

申请日：2007-08-29

申请人： Franz Laermer ,  Michael Stumber ,  Dick Scholten ,  Christian Maeurer

发明人： Franz Laermer ,  Michael Stumber ,  Dick Scholten ,  Christian Maeurer

IPC分类号： A61M5/00

CPC分类号： A61B17/205 ,  A61B2090/037 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0046 ,  A61M2037/0053

摘要： An array for placement on the skin of a human or animal patient for the purpose of the transdermal application of pharmaceuticals, toxins or active agents, having microneedles that are situated on a carrier substrate, the microneedles having a preset breaking point in the area of the transition to the carrier substrate.

摘要翻译： 用于放置在人或动物患者的皮肤上的阵列，用于透皮施用具有位于载体基底上的微针的药物，毒素或活性剂的目的，微针在该区域中具有预设的断点 过渡到载体基底。

公开(公告)号：US08492850B2

公开(公告)日：2013-07-23

申请号：US12308200

申请日：2007-04-27

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L27/088

CPC分类号： H01L21/02008 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02612 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/02667 ,  H01L33/346

摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.

摘要翻译： 一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔， 要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底 配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。

公开(公告)号：US08466042B2

公开(公告)日：2013-06-18

申请号：US12994092

申请日：2009-04-03

申请人： Franz Laermer ,  Kathrin Van Teeffelen ,  Christina Leinenbach

发明人： Franz Laermer ,  Kathrin Van Teeffelen ,  Christina Leinenbach

IPC分类号： H01L21/301

CPC分类号： G01L9/0042 ,  B81C1/00888 ,  B81C2201/017 ,  H01L21/3065 ,  H01L21/30655 ,  H04R19/005 ,  H04R31/006

摘要： A method for manufacturing separated micromechanical components situated on a silicon substrate includes the following steps of a) providing separation trenches on the substrate via an anisotropic plasma deep etching method, b) irradiating the area of the silicon substrate which forms the base of the separation trenches using laser light, the silicon substrate being converted from a crystalline state into an at least partially amorphous state by the irradiation in this area, and c) inducing mechanical stresses in the substrate. In one specific embodiment, cavities are etched simultaneously with the etching of the separation trenches. The etching depths can be controlled via the RIE lag effect.

摘要翻译： 一种制造位于硅衬底上的分离的微机械部件的方法包括以下步骤：a）通过各向异性等离子体深刻蚀方法在衬底上提供分离槽，b）照射形成分离槽底部的硅衬底区域 使用激光，硅衬底通过在该区域中的照射从结晶状态转变为至少部分非晶态，以及c）在衬底中引起机械应力。 在一个具体实施例中，在蚀刻分离沟槽的同时蚀刻空腔。 蚀刻深度可以通过RIE滞后效应来控制。

公开(公告)号：US08382940B2

公开(公告)日：2013-02-26

申请号：US10519724

申请日：2003-03-27

申请人： Franz Laermer

发明人： Franz Laermer

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C03C15/00 ,  C03C25/68 ,  B44C1/22

CPC分类号： H01J37/321 ,  B01J19/088 ,  B01J2219/0894 ,  C01B7/24 ,  H01L21/3065 ,  H05H1/46 ,  H05H2001/4667

摘要： A device (6) and a method for generating chlorine trifluoride is described, a high-density plasma (105) being generated in the interior of a plasma reactor (100) using plasma generating means (110, 120, 130, 150, 155, 160, 170, 180), and a first gas and a second gas, which react with one another under the influence of the high-density plasma (105) in the plasma reactor (100) under the formation of chlorine trifluoride, being supplied to the plasma reactor (100) via gas supply means (21, 22, 25, 26). In addition, a gas outlet (20) is provided, via which the generated chlorine trifluoride can be removed from the plasma reactor (100). Finally, a system (5) for etching semiconductor substrates (30), silicon wafers in particular, is described including such an upstream device (6), the system (5) having a process chamber (10) which is connected to the plasma reactor (100) via the gas outlet (20), and the semiconductor substrate (30) being situated in the process chamber (10) and exposed to the gaseous chlorine trifluoride generated by the device (6).

摘要翻译： 本发明描述了一种用于产生三氟化氯的装置（6）和产生三氟化氯的方法，在等离子体反应器（100）的内部使用等离子体产生装置（110,120,130,150,155， 160,170,180），以及第一气体和第二气体，其在等离子体反应器（100）中形成的三氟化氯的高密度等离子体（105）的作用下彼此反应，供给至 所述等离子体反应器（100）经由气体供应装置（21,22,25,26）。 此外，设置有气体出口（20），通过该气体出口（20）可以从等离子体反应器（100）中除去产生的三氟化氯。 最后，描述了一种用于蚀刻半导体衬底（30）的系统（5），特别是硅晶片，其包括这种上游装置（6），该系统（5）具有处理室（10），其连接到等离子体反应器 （100），并且所述半导体衬底（30）位于所述处理室（10）中并暴露于由所述装置（6）产生的气态三氟化氯。

公开(公告)号：US08182707B2

公开(公告)日：2012-05-22

申请号：US11658461

申请日：2005-07-01

申请人： Franz Laermer ,  Silvia Kronmueller ,  Tino Fuchs ,  Christina Leinenbach

发明人： Franz Laermer ,  Silvia Kronmueller ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01L21/32137 ,  B81C1/00476 ,  B81C1/00595 ,  H01L21/3065 ,  H01L21/30655

摘要： A method for etching a layer that is to be removed on a substrate, in which a Si1-xGex layer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF3. The etching behavior of the Si1-xGex layer can be controlled via the Ge portion in the Si1-xGex layer. The etching method is particularly well-suited for manufacturing self-supporting structures in a micromechanical sensor and for manufacturing such self-supporting structures in a closed hollow space, because the Si1-xGex layer, as a sacrificial layer or filling layer, is etched highly selectively relative to silicon.

摘要翻译： 在蚀刻气体辅助下，在气相蚀刻中至少在区域中蚀刻要除去的层的方法，其中Si1-xGex层是要去除的层，Si1-xGex层被去除的层， ，特别是ClF3。 可以通过Si1-xGex层中的Ge部分来控制Si1-xGex层的蚀刻行为。 蚀刻方法特别适用于在微机械传感器中制造自支撑结构，并且在封闭的中空空间中制造这种自支撑结构，因为作为牺牲层或填充层的Si1-xGex层被高度蚀刻 选择性地相对于硅。

公开(公告)号：US08164174B2

公开(公告)日：2012-04-24

申请号：US10416140

申请日：2001-10-10

申请人： Franz Laermer

发明人： Franz Laermer

IPC分类号： H01L23/48

CPC分类号： B81B7/0064 ,  H01L2924/0002 ,  H01L2924/00

摘要： A microstructure component, in particular an encapsulated micromechanical sensor element, including at least one microstructure patterned out from a silicon layer being encapsulated by a glass element. At least the region of the glass element covering the microstructure is furnished with an electrically conductive coating on its side facing the microstructure.

摘要翻译： 微结构组件，特别是包封的微机械传感器元件，其包括由玻璃元件封装的由硅层图案化的至少一个微结构。 至少覆盖微结构的玻璃元件的区域在其面向微结构的一侧配备有导电涂层。

公开(公告)号：US20120076339A1

公开(公告)日：2012-03-29

申请号：US13147116

申请日：2010-01-15

申请人： Thomas Buck ,  Franz Laermer

发明人： Thomas Buck ,  Franz Laermer

IPC分类号： H04R3/00

CPC分类号： H04R3/007 ,  H04R19/016

摘要： A system and method are described for reducing the current consumption of a microphone component without adversely affecting performance. The system includes a micromechanical microphone capacitor, an acoustically inactive compensation capacitor, an arrangement for applying a high-frequency sampling signal to the microphone capacitor and for applying the inverted sampling signal to the compensation capacitor, an integrating operational amplifier which integrates the sum of the current flow through the microphone capacitor and the current flow through the compensation capacitor as a charge amplifier, a demodulator, which is synchronized with the sampling signal, for the output signal of the integrating operational amplifier, and a low-pass filter which uses the output signal of the demodulator to obtain a microphone signal that corresponds to the changes in capacitance of the microphone capacitor. The sampling signal is composed of a periodic sequence of sampling pulses and pause times. In addition, at least one first switching element is provided which reduces the current flow through the integrating operational amplifier during the pause times. The low-pass filter has a “sample-and-hold” characteristic so that during the pause times the low-pass filter in each case stores the output signal of the integrating operational amplifier averaged over the preceding sampling operation.

摘要翻译： 描述了一种用于减少麦克风组件的电流消耗而不会不利地影响性能的系统和方法。 该系统包括微机械麦克风电容器，声学无效补偿电容器，用于向麦克风电容器施加高频采样信号并将反相采样信号施加到补偿电容器的装置，积分运算放大器，其将 通过麦克风电容器的电流流过作为电荷放大器的补偿电容器的电流，与采样信号同步的解调器，用于积分运算放大器的输出信号，以及使用该输出的低通滤波器 解调器的信号以获得对应于麦克风电容器的电容变化的麦克风信号。 采样信号由采样脉冲和暂停时间的周期序列组成。 此外，提供至少一个第一开关元件，其在暂停时间期间减少通过积分运算放大器的电流。 低通滤波器具有“采样和保持”特性，使得在暂停时间期间，低通滤波器在每种情况下存储在先前采样操作上平均的积分运算放大器的输出信号。