利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

75 条记录 (耗时 0.024 秒)

    Semiconductor method and device with mixed orientation substrate
    51.
    发明申请
    Semiconductor method and device with mixed orientation substrate 有权
    具有混合取向衬底的半导体方法和器件

    公开(公告)号：US20060170045A1

    公开(公告)日：2006-08-03

    申请号：US11047928

    申请日：2005-02-01

    申请人： Jiang Yan ,  Chun-Yung Sung ,  Danny Shum ,  Alois Gutmann

    发明人： Jiang Yan ,  Chun-Yung Sung ,  Danny Shum ,  Alois Gutmann

    IPC分类号： H01L27/12

    CPC分类号： H01L27/1203 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1207 ,  H01L29/045 ,  H01L29/78687

    摘要： A semiconductor device includes a semiconductor body having semiconductor material of a first crystal orientation. A first transistor is formed in the semiconductor material of the first crystal orientation. An insulating layer overlies portions of the semiconductor body and a semiconductor layer overlies the insulating layer. The semiconductor layer has a second crystal orientation. A second transistor is formed in the semiconductor layer having the second crystal orientation. In the preferred embodiment, the semiconductor body is (100) silicon, the first transistor is an NMOS transistor, the semiconductor layer is (110) silicon and the second transistor is a PMOS transistor.

    摘要翻译： 半导体器件包括具有第一晶体取向的半导体材料的半导体本体。 在第一晶体取向的半导体材料中形成第一晶体管。 绝缘层覆盖半导体本体的部分，并且半导体层覆盖绝缘层。 半导体层具有第二晶体取向。 在具有第二晶体取向的半导体层中形成第二晶体管。 在优选实施例中，半导体本体是（100）硅，第一晶体管是NMOS晶体管，半导体层是（110）硅，第二晶体管是PMOS晶体管。

    Mask and method for using the mask in lithographic processing
    52.
    发明授权
    Mask and method for using the mask in lithographic processing 失效
    在光刻加工中使用掩模的掩模和方法

    公开(公告)号：US07030506B2

    公开(公告)日：2006-04-18

    申请号：US10685004

    申请日：2003-10-15

    申请人： Syed Shoaib Hasan Zaidi ,  Alois Gutmann ,  Gary Williams

    发明人： Syed Shoaib Hasan Zaidi ,  Alois Gutmann ,  Gary Williams

    IPC分类号： H01L23/544

    CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F9/7076 ,  H01L2223/54466 ,  H01L2924/0002 ,  Y10T428/24802 ,  H01L2924/00

    摘要： A method and mask to improve measurement of alignment marks is disclosed. An exemplary embodiment of the invention includes a resist mask with a patterned alignment mark comprising an assemblage of features whose spacing is smaller than the wavelength of light used to measure the alignment. In a preferred embodiment, an alignment mark patterning process alters the appearance of the alignment mark and renders an enhanced contrast with the substrate background.

    摘要翻译： 公开了一种改善对准标记测量的方法和掩模。 本发明的示例性实施例包括具有图案化对准标记的抗蚀剂掩模，该图案对准标记包括其间隔小于用于测量对准的光的波长的特征的组合。 在优选实施例中，对准标记图案化工艺改变对准标记的外观，并提高与衬底背景的对比度。

    System and method of enhancing alignment marks
    53.
    发明授权
    System and method of enhancing alignment marks 失效
    增强对准标记的系统和方法

    公开(公告)号：US06954002B2

    公开(公告)日：2005-10-11

    申请号：US10230493

    申请日：2002-08-29

    申请人： Shoaib H. Zaidi ,  Gary Williams ,  Alois Gutmann

    发明人： Shoaib H. Zaidi ,  Gary Williams ,  Alois Gutmann

    IPC分类号： G03F9/00 ,  H01L23/544 ,  H01L29/06

    CPC分类号： G03F9/7076

    摘要： A semiconductor wafer comprises a semiconductor substrate, a surface alignment mark visible on the semiconductor surface and a plurality of nanostructures on the surface of the surface alignment mark having an average pitch adapted to reduce reflectivity of the surface alignment mark in a predetermined light bandwidth.

    摘要翻译： 半导体晶片包括半导体衬底，半导体表面上可见的表面对准标记和表面对准标记表面上的多个纳米结构，其具有适于减小预定光带宽中的表面对准标记的反射率的平均间距。

    Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning
    55.
    发明授权
    Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning 有权
    通过在图案化之后引入硅来提高化学放大光致抗蚀剂的耐蚀刻性的方法

    公开(公告)号：US06379869B1

    公开(公告)日：2002-04-30

    申请号：US09282745

    申请日：1999-03-31

    申请人： Uwe Paul Schroeder ,  Gerhard Kunkel ,  Alois Gutmann ,  Bruno Spuler

    发明人： Uwe Paul Schroeder ,  Gerhard Kunkel ,  Alois Gutmann ,  Bruno Spuler

    IPC分类号： G03F700

    CPC分类号： G03F7/405

    摘要： A photoresist system is provided that is easily structurable and is suitable for deep ultraviolet range patterning. An increased etching resistance to oxygen-containing plasma is produced in a lithographically generated photoresist structure by treatment with an etch protectant. The etch protectant includes a silylating agent for chemical reaction with reactive groups of the photoresist. In an embodiment, the photoresist includes a base resin initially containing no aromatic groups. Silylating agents include silicon tetrachloride, silicon tetrafluoride, trichlorosilane, dimethylchlorosilane and hexamethyldisilazane.

    摘要翻译： 提供光致抗蚀剂系统，其易于结构化并且适用于深紫外范围图案化。 通过用蚀刻保护剂处理，在光刻产生的光致抗蚀剂结构中产生对含氧等离子体的增加的耐蚀刻性。 蚀刻保护剂包括用于与光致抗蚀剂的反应性基团进行化学反应的甲硅烷化剂。 在一个实施方案中，光致抗蚀剂包括最初不含芳族基团的基础树脂。 硅烷化剂包括四氯化硅，四氟化硅，三氯硅烷，二甲基氯硅烷和六甲基二硅氮烷。

    Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles
    56.
    发明授权
    Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles 有权
    通过使用多个显影/冲洗循环来减少在光致抗蚀剂中形成的开口周围及其周围的显影后缺陷的方法

    公开(公告)号：US06372408B1

    公开(公告)日：2002-04-16

    申请号：US09598374

    申请日：2000-06-21

    申请人： Zhijian Lu ,  Alan Thomas ,  Alois Gutmann ,  Kuang Jung Chen ,  Margaret C. Lawson

    发明人： Zhijian Lu ,  Alan Thomas ,  Alois Gutmann ,  Kuang Jung Chen ,  Margaret C. Lawson

    IPC分类号： G03F730

    CPC分类号： G03F7/3021

    摘要： In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable remnants (denoted as Blob Defects) of various components of photoresist material remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of using a Puddle Development technique to develop the photoresist material, and subsequently exposing the semiconductor wafer to at least one Puddle Rinse cycle which uses water.

    摘要翻译： 在可用的深紫外（DUV）敏感光刻胶的曝光和显影中，已经观察到遵循现有技术的标准曝光和显影方法导致残留的光致抗蚀剂材料的各种组分的不希望的残留物（表示为Blob缺陷）的高密度 在半导体基板（主体）上。 曝光和显影光致抗蚀剂材料的方法导致这些Blob缺陷的发生率降低，包括使用水坑开发技术开发光致抗蚀剂材料，随后将半导体晶片暴露于使用水的至少一个水坑冲洗循环。

    Semiconductor devices and structures thereof
    57.
    发明授权
    Semiconductor devices and structures thereof 有权
    半导体器件及其结构

    公开(公告)号：US09401322B2

    公开(公告)日：2016-07-26

    申请号：US13190310

    申请日：2011-07-25

    申请人： Markus Naujok ,  Hermann Wendt ,  Alois Gutmann ,  Muhammed Shafi Pallachalil

    发明人： Markus Naujok ,  Hermann Wendt ,  Alois Gutmann ,  Muhammed Shafi Pallachalil

    IPC分类号： H01L29/40 ,  H01L23/522 ,  H01L21/768

    CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.

    摘要翻译： 公开了一种在互连之间具有气隙的结构。 第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。 导电线形成在第一和第二绝缘层中。 处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。 第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。 工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是 不是第一个地区。

    Semiconductor Devices and Structures Thereof
    59.
    发明申请
    Semiconductor Devices and Structures Thereof 审中-公开
    半导体器件及其结构

    公开(公告)号：US20110278730A1

    公开(公告)日：2011-11-17

    申请号：US13190310

    申请日：2011-07-25

    申请人： Markus Naujok ,  Hermann Wendt ,  Alois Gutmann

    发明人： Markus Naujok ,  Hermann Wendt ,  Alois Gutmann

    IPC分类号： H01L23/48 ,  B82Y99/00

    CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.

    摘要翻译： 公开了一种在互连之间具有气隙的结构。 第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。 导电线形成在第一和第二绝缘层中。 处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。 第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。 工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是 不是第一个地区。