公开(公告)号：US08035070B2

公开(公告)日：2011-10-11

申请号：US12858136

申请日：2010-08-17

申请人： Akiyoshi Kohno ,  Yoshiaki Kato ,  Yuji Matsuda

发明人： Akiyoshi Kohno ,  Yoshiaki Kato ,  Yuji Matsuda

IPC分类号： H01L27/00

CPC分类号： H04N5/335 ,  H04N5/361 ,  H04N5/378

摘要： An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit 6, and processing luminance signals from photodetectors to output image information, the buffer circuit performing impedance conversion on signals outputted from a final output circuit of the one or more output circuits, the final output circuit being a source follower circuit that has an active element and a current source circuit 5 which is inserted between a source terminal of the active element and a reference voltage terminal, wherein the current source circuit and the buffer circuit 6 are external to a solid-state image sensor 1 having the photodetectors, and a main part of the current source circuit 5 and a main part of the buffer circuit 6 are in a single package.

摘要翻译： 提供一种能够抑制图像质量和输出特性的劣化的成像装置，其具有串联的一个或多个输出电路和缓冲电路6，并且处理来自光电检测器的亮度信号以输出图像信息，该缓冲电路对从 一个或多个输出电路的最终输出电路，最终输出电路是具有有源元件的源极跟随器电路和插入在有源元件的源极端子与参考电压端子之间的电流源电路5，其中 电流源电路和缓冲电路6在具有光电检测器的固态图像传感器1的外部，电流源电路5的主要部分和缓冲电路6的主要部分处于单个封装中。

公开(公告)号：US20110024605A1

公开(公告)日：2011-02-03

申请号：US12858136

申请日：2010-08-17

申请人： Akiyoshi Kohno ,  Yoshiaki Kato ,  Yuji Matsuda

发明人： Akiyoshi Kohno ,  Yoshiaki Kato ,  Yuji Matsuda

IPC分类号： H01L27/00

CPC分类号： H04N5/335 ,  H04N5/361 ,  H04N5/378

摘要： An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit 6, and processing luminance signals from photodetectors to output image information, the buffer circuit performing impedance conversion on signals outputted from a final output circuit of the one or more output circuits, the final output circuit being a source follower circuit that has an active element and a current source circuit 5 which is inserted between a source terminal of the active element and a reference voltage terminal, wherein the current source circuit and the buffer circuit 6 are external to a solid-state image sensor 1 having the photodetectors, and a main part of the current source circuit 5 and a main part of the buffer circuit 6 are in a single package.

摘要翻译： 提供一种能够抑制图像质量和输出特性的劣化的成像装置，其具有串联的一个或多个输出电路和缓冲电路6，并且处理来自光电检测器的亮度信号以输出图像信息，该缓冲电路对从 一个或多个输出电路的最终输出电路，最终输出电路是具有有源元件的源极跟随器电路和插入在有源元件的源极端子与参考电压端子之间的电流源电路5，其中 电流源电路和缓冲电路6在具有光电检测器的固态图像传感器1的外部，电流源电路5的主要部分和缓冲电路6的主要部分处于单个封装中。

公开(公告)号：US20050269483A1

公开(公告)日：2005-12-08

申请号：US11143958

申请日：2005-06-03

申请人： Akiyoshi Kohno ,  Yoshiaki Kato ,  Yuji Matsuda

发明人： Akiyoshi Kohno ,  Yoshiaki Kato ,  Yuji Matsuda

IPC分类号： H01L21/339 ,  H01L27/00 ,  H01L29/762 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/372

CPC分类号： H04N5/335 ,  H04N5/361 ,  H04N5/378

摘要： Providing an imaging apparatus capable of suppressing deterioration of image qualities and output properties when a wafer thickness of the imaging apparatus is made thin. The imaging apparatus having one or more output circuits in series and a buffer circuit 6, and processing luminance signals from photodetectors to output image information, the buffer circuit performing impedance conversion on signals outputted from a final output circuit of the one or more output circuits, the final output circuit being a source follower circuit that has an active element and a current source circuit 5 which is inserted between a source terminal of the active element and a reference voltage terminal, wherein the current source circuit and the buffer circuit 6 are external to a solid-state image sensor 1 having the photodetectors, and a main part of the current source circuit 5 and a main part of the buffer circuit 6 are in a single package.

摘要翻译： 提供一种成像装置，当成像装置的晶片厚度变薄时能够抑制图像质量和输出特性的劣化。 该成像装置具有串联的一个或多个输出电路和缓冲电路6，并且处理来自光电检测器的亮度信号以输出图像信息，该缓冲电路对从一个或多个输出电路的最终输出电路输出的信号进行阻抗转换， 最终输出电路是具有有源元件的源极跟随器电路和插入在有源元件的源极端子与参考电压端子之间的电流源电路5，其中电流源电路和缓冲电路6位于 具有光电检测器的固态图像传感器1，电流源电路5的主要部分和缓冲电路6的主要部分处于单个封装中。

公开(公告)号：US5302545A

公开(公告)日：1994-04-12

申请号：US73137

申请日：1993-06-07

申请人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

发明人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

IPC分类号： H01L27/148 ,  H01L21/339

CPC分类号： H01L27/14831 ,  Y10S438/954

摘要： A charge-coupled device comprises transfer gate electrodes separated from a substrate by a multilayer insulating film, and gate electrodes of MIS transistors separated from the substrate by a single layer insulating film. The multilayer insulating film comprising at least a lower silicon oxide layer of 10 nm to 200 nm thickness and an upper silicon nitride layer of 10 nm to 100 nm thickness. Since each of the gate insulating films of the MIS transistors is the same layer as the lower silicon oxide layer, there occurs no degradation in the transistor characteristics due to the surface states or the trapping states present within the silicon nitride layer.

摘要翻译： 电荷耦合器件包括通过多层绝缘膜与衬底分离的传输栅电极，以及通过单层绝缘膜与衬底分离的MIS晶体管的栅电极。 所述多层绝缘膜至少包括10nm至200nm厚度的较低氧化硅层和10nm至100nm厚度的上部氮化硅层。 由于MIS晶体管的每个栅极绝缘膜与下部氧化硅层相同，所以由于存在于氮化硅层内的表面状态或俘获状态，晶体管特性不会降低。

公开(公告)号：US5241198A

公开(公告)日：1993-08-31

申请号：US797307

申请日：1991-11-25

申请人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

发明人： Hiroyuki Okada ,  Wataru Kamisaka ,  Masaji Asaumi ,  Yuji Matsuda

IPC分类号： H01L27/148

CPC分类号： H01L27/14831 ,  Y10S438/954

摘要： A charge-coupled device comprises transfer gate electrodes separated from a substrate by a multi-layer insulating film, and gate electrodes of MIS transistors separated from the substrate by a single layer insulating film. The multilayer insulating film comprising at least a lower silicon oxide layer of 10 nm to 200 nm thickness and an upper silicon nitride layer of 10 nm to 100 nm thickness. Since each of the gate insulating films of the MIS transistors is the same layer as the lower silicon oxide layer, there occurs no degradation in the transistor characteristics due to the surface states or the trapping states present within the silicon nitride layer.

公开(公告)号：US08126490B2

公开(公告)日：2012-02-28

申请号：US12811657

申请日：2009-01-20

申请人： Kenichi Taura ,  Yuji Matsuda

发明人： Kenichi Taura ,  Yuji Matsuda

IPC分类号： H04B7/00 ,  H04B1/00

CPC分类号： H04B1/1027 ,  H04B1/1081 ,  H04L27/14

摘要： A radio receiver (FM radio receiver) has an amplitude detecting section (13) for detecting the amplitude level of a received radio wave; a multipath occurrence state detecting section (14) for monitoring the amplitude level, and for detecting the degree of a multipath occurrence state; a multipath occurrence state deciding section (15) for deciding the operation limiting level of the amplitude correction according to the degree of the multipath occurrence state; a receiving condition deciding section (20) for deciding receiving conditions of the radio wave; and a limiting level deciding section (21) for adjusting the operation limiting level of the amplitude correction output from the multipath occurrence state deciding section (15) according to a receiving condition decision result output from the receiving condition deciding section (20), and suppresses the multipath noise by imposing operation limitations on the amplitude correction of the FM demodulator 9.

摘要翻译： 无线电接收机（FM无线电接收机）具有用于检测所接收的无线电波的振幅电平的振幅检测部分（13） 多径发生状态检测部（14），用于监视振幅电平，并检测多径发生状态的程度; 多路径发生状态判定部（15），用于根据多径发生状态的程度决定振幅校正的动作限制电平; 接收条件决定部（20），用于决定无线电波的接收条件; 以及限制电平决定部（21），用于根据从接收条件决定部（20）输出的接收条件判定结果，调整从多路径发生状态判定部（15）输出的幅度校正的动作限制电平，并抑制 通过对FM解调器9的幅度校正施加操作限制的多路径噪声。

公开(公告)号：US07795571B2

公开(公告)日：2010-09-14

申请号：US11889919

申请日：2007-08-17

申请人： Akiyoshi Kohno ,  Yoshiaki Kato ,  Yuji Matsuda

发明人： Akiyoshi Kohno ,  Yoshiaki Kato ,  Yuji Matsuda

IPC分类号： H01L27/00

CPC分类号： H04N5/335 ,  H04N5/361 ,  H04N5/378

摘要： An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit 6, and processing luminance signals from photodetectors to output image information, the buffer circuit performing impedance conversion on signals outputted from a final output circuit of the one or more output circuits, the final output circuit being a source follower circuit that has an active element and a current source circuit 5 which is inserted between a source terminal of the active element and a reference voltage terminal, wherein the current source circuit and the buffer circuit 6 are external to a solid-state image sensor 1 having the photodetectors, and a main part of the current source circuit 5 and a main part of the buffer circuit 6 are in a single package.

摘要翻译： 提供一种能够抑制图像质量和输出特性的劣化的成像装置，其具有串联的一个或多个输出电路和缓冲电路6，并且处理来自光电检测器的亮度信号以输出图像信息，该缓冲电路对从 一个或多个输出电路的最终输出电路，最终输出电路是具有有源元件的源极跟随器电路和插入在有源元件的源极端子与参考电压端子之间的电流源电路5，其中 电流源电路和缓冲电路6在具有光电检测器的固态图像传感器1的外部，电流源电路5的主要部分和缓冲电路6的主要部分处于单个封装中。

公开(公告)号：US20070284357A1

公开(公告)日：2007-12-13

申请号：US11739923

申请日：2007-04-25

申请人： Hiroyuki Takahashi ,  Tohru Nagatsuma ,  Yuji Matsuda ,  Atsuki Iwata ,  Eiji Nemoto ,  Manabu Kodama

发明人： Hiroyuki Takahashi ,  Tohru Nagatsuma ,  Yuji Matsuda ,  Atsuki Iwata ,  Eiji Nemoto ,  Manabu Kodama

IPC分类号： H05B1/00

CPC分类号： G03G15/2039

摘要： A heater device includes a heating unit which includes a heating element that generates heat using an induction-heating method. A power supply part supplies a driving current to the heating unit. A first high-frequency component cutoff unit is connected to the power supply part. A switching unit controls the supply of the driving current from the power supply part to the heating unit. A second high-frequency component cutoff unit is connected to the switching unit. And a connection unit connects the first high-frequency component cutoff unit and the second high-frequency component cutoff unit.

摘要翻译： 加热器装置包括加热单元，该加热单元包括使用感应加热方法产生热的加热元件。 电源部件向加热单元提供驱动电流。 第一高频分量切断单元连接到电源部分。 开关单元控制从电源部到加热单元的驱动电流的供给。 第二高频分量截止单元连接到开关单元。 并且连接单元连接第一高频分量切断单元和第二高频分量切断单元。

公开(公告)号：US20050275062A1

公开(公告)日：2005-12-15

申请号：US11152766

申请日：2005-06-15

申请人： Yuji Matsuda

发明人： Yuji Matsuda

IPC分类号： H01L21/00 ,  H01L29/00

CPC分类号： H01L23/544 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2224/06 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to provide a technique to facilitate an identification of a semiconductor bare chip. To achieve this object, the semiconductor bare chip includes a plurality of fuse elements f11 to f19 disposed, in a predetermined order, on a surface of a semiconductor substrate. ID information of the semiconductor bare chip is indicated by a combination of the order of the fuse elements and fusing status of the fuse elements, which indicate whether or not the respective fuse elements are fused.

摘要翻译： 目的是提供一种便于识别半导体裸芯片的技术。 为了实现该目的，半导体裸芯片包括以预定顺序设置在半导体衬底的表面上的多个熔丝元件f 11至f 19。 半导体裸芯片的ID信息由熔丝元件的顺序和熔丝元件的熔合状态的组合来表示，这些指示各熔丝元件是否熔合。

公开(公告)号：US06838743B2

公开(公告)日：2005-01-04

申请号：US10372257

申请日：2003-02-25

申请人： Yuka Yamada ,  Takehito Yoshida ,  Shigeru Takeyama ,  Yuji Matsuda ,  Katsuhiko Mutoh

发明人： Yuka Yamada ,  Takehito Yoshida ,  Shigeru Takeyama ,  Yuji Matsuda ,  Katsuhiko Mutoh

IPC分类号： H01L21/203 ,  B01D53/78 ,  H01L31/18 ,  H01L33/00 ,  H01L33/18 ,  H01L33/26 ,  H01L31/06 ,  H01L31/0352

CPC分类号： H01L33/26 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/25 ,  Y10T428/258

摘要： This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles dispersed layer having semiconductor ultrafine particles dispersed in the medium on the substrate.

摘要翻译： 本发明涉及包含具有可控电特性的均匀介质的光电子材料; 和分散在介质中并且具有100nm以下的平均粒径的半导体超细颗粒，以及使用其的涂布装置。 本发明还涉及一种通过将激光束照射到放置在低压稀有气体环境中的反应室中的半导体材料的第一靶上，以及具有可控电的介质材料的第二靶材来制造光电子材料的方法 特性，放置在反应室中，冷凝/生长从放置在反应室中的基板上平均粒度为100nm以下的超微粒子作为被收集的第一靶材烧蚀的半导体材料，并冷凝/生长介质 从放置在反应室内的基板上收集的第二靶材烧蚀掉的材料，由此形成分散在基板上的介质中的具有半导体超微粒子的超微粒子分散层。