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    Magnetoresistance effect head
    51.
    发明授权
    Magnetoresistance effect head 失效
    磁阻效应头

    公开(公告)号：US5585199A

    公开(公告)日：1996-12-17

    申请号：US303014

    申请日：1994-09-08

    申请人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi

    IPC分类号： G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  H01F1/00 ,  G11B21/00

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3281 ,  G11B2005/3996 ,  G11B5/012 ,  H01F10/3295 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12535

    摘要： A magnetoresistance effect head is disclosed which is provided with a spin valve film of the three-layer laminate construction comprising a pair of magnetic layers made of a Co-based alloy and a nonmagnetic intermediate layer interposed between the pair of magnetic layers. This magnetoresistance effect head satisfies the expressions, 3.ltoreq.d.sub.1 .ltoreq.7, 3.ltoreq.d.sub.2 .ltoreq.7, and 0.ltoreq. (d.sub.1 -d.sub.2)/d.sub.1 .ltoreq.0.40, wherein d.sub.1 and d.sub.2 stand for the thicknesses (nm) of the pair of magnetic layers (providing d.sub.1 .gtoreq.d.sub.2). A soft magnetic layer of high resistance is disposed contiguously to that of the pair of magnetic layers which has the direction of magnetization thereof varied by an external magnetic layer. The total thickness of this soft magnetic layer and the magnetic layer contiguous thereto is in the range of from 5 to 40 nm. In the case of a magnetoresistance effect head which is provided with a spin valve film of the five-layer laminate construction, the thicknesses (nm), d.sub.1 and d.sub.2, of the two outer magnetic layers similarly satisfy the conditions mentioned above. Further, the thickness (nm), d.sub.3, of the center magnetic layer satisfies the expression, 1.ltoreq.d.sub.3 .ltoreq.2/3d.sub.1. As a result, the magnetoresistance effect head acquires the ability to produce a large rate of change of magnetic resistance with high repeatability.

    摘要翻译： 公开了一种磁阻效应头，其具有三层层压结构的自旋阀膜，该三层层压结构包括一对由Co基合金制成的磁性层和介于该一对磁性层之间的非磁性中间层。 该磁电阻效应头满足表达式，其中d1和d2表示为3 / = d2）。 高电阻的软磁性层与具有由外部磁性层变化的磁化方向的一对磁性层的磁性层相邻设置。 该软磁性层和与其相邻的磁性层的总厚度为5〜40nm的范围。 在具有五层层叠结构的自旋阀膜的磁阻效应头的情况下，两个外磁层的厚度（nm），d1和d2类似地满足上述条件。 此外，中心磁性层的厚度（nm），d3满足表达式1，d3，其中E 2， 结果，磁阻效应头获得以高重复性产生大的磁阻变化率的能力。

    Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus
    53.
    发明授权
    Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus 有权
    磁阻效应元件，磁头和磁再现装置

    公开(公告)号：US07218484B2

    公开(公告)日：2007-05-15

    申请号：US10659299

    申请日：2003-09-11

    申请人： Susumu Hashimoto ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

    发明人： Susumu Hashimoto ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  G11B5/3906 ,  H01L43/12 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.

    摘要翻译： 磁阻效应元件包括：磁阻效应膜，一对电极和相分离层。 磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层，其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。 一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。 相分离层设置在该对电极之间。 相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。 第一和第二相中的一个包括选自氧，氮，氟和碳中的至少一种元素，其浓度高于第一相和第二相中的其它相。

    Magnetoresistance effect element with improved antiferromagnetic layer
    56.
    发明授权
    Magnetoresistance effect element with improved antiferromagnetic layer 失效
    具有改进反铁磁层的磁阻效应元件

    公开(公告)号：US5552949A

    公开(公告)日：1996-09-03

    申请号：US204676

    申请日：1994-03-02

    申请人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Atsuhito Sawabe ,  Masashi Sahashi

    发明人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Atsuhito Sawabe ,  Masashi Sahashi

    IPC分类号： G11B5/39 ,  H01L43/08

    CPC分类号： G11B5/399 ,  H01L43/08

    摘要： An exchange coupled film is presented, which has an antiferromagnetic film being made of N.sub.100-z Mn.sub.z (where N is at least one selected from the group consisting of Cu, Ru, Rh, Re, Pd, Pt, Ag, Au, Os, and Ir; and 24.ltoreq.z.ltoreq.75) and having a tetragonal crystalline structure or being made of Cr.sub.100-x M.sub.x (where M is at least one selected from the group consisting of elements of group 3b of periodic table, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, Ir, Mn, Fe, Co, and V; and x is in the range of 0

    摘要翻译： 提出了一种交换耦合膜，其具有由N100-zMnz（其中N是选自由Cu，Ru，Rh，Re，Pd，Pt，Ag，Au，Os和...组成的组中的至少一种）的反铁磁膜 Ir;和24 75），并且具有四方晶系结构或由Cr100-xMx（其中M是选自元素周期表第3b族元素中的至少一种，Cu，Ru ，Rh，Re，Pt，Pd，Ag，Au，Os，Ir，Mn，Fe，Co和V; x在0

    Magnetoresistance effect element and magnetic recording apparatus
    57.
    发明授权
    Magnetoresistance effect element and magnetic recording apparatus 失效
    磁电阻效应元件和磁记录装置

    公开(公告)号：US5493465A

    公开(公告)日：1996-02-20

    申请号：US209927

    申请日：1994-03-14

    申请人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  H01L43/08

    摘要： A magnetoresistance effect element has a pair of ferromagnetic layers with a middle non-magnetic metallic layer interposed therebetween. The middle non-magnetic metallic layer has lamination structure of non-magnetic metallic thin films formed of at least two kinds of non-magnetic metallic materials. In the lamination structure of the non-magnetic metallic thin film, Fermi energies of the non-magnetic metallic thin films disposed on interface sides of the ferromagnetic layers has a value closer to a Fermi energy in a direction of spin whose electron spin dependent mean free path is long among Fermi energies of the ferromagnetic layers. A non-magnetic metallic thin film is disposed between such two non-magnetic metallic thin films. Difference in Fermi energy between non-magnetic metallic thin films made of two kinds of non-magnetic metallic materials is 0.5 eV or more. By the use of such a middle non-magnetic metallic layer, while the thickness thereof is as thin as possible, exchange coupling between ferromagnetic layers can be small. Thus, resistance change sensitivity can be enhanced.

    摘要翻译： 磁阻效应元件具有介于其间的中间非磁性金属层的一对铁磁层。 中间非磁性金属层具有由至少两种非磁性金属材料形成的非磁性金属薄膜的叠层结构。 在非磁性金属薄膜的层压结构中，设置在铁磁层的界面侧上的非磁性金属薄膜的费米能量在旋转方向具有更接近费米能量的值，其电子自旋依赖平均自由度 在铁磁层的费米能量之间的路径很长。 这种非磁性金属薄膜之间设有非磁性金属薄膜。 由两种非磁性金属材料制成的非磁性金属薄膜之间的费米能的差异为0.5eV以上。 通过使用这样的中间非磁性金属层，虽然其厚度尽可能薄，铁磁层之间的交换耦合可以很小。 因此，可以提高电阻变化灵敏度。

    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, AND MAGNETIC REPRODUCING APPARATUS
    58.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, AND MAGNETIC REPRODUCING APPARATUS 审中-公开
    磁阻效应元件，磁头和磁力再生装置

    公开(公告)号：US20070259213A1

    公开(公告)日：2007-11-08

    申请号：US11741900

    申请日：2007-04-30

    申请人： Susumu HASHIMOTO ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

    发明人： Susumu HASHIMOTO ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  G11B5/3906 ,  H01L43/12 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.

    摘要翻译： 磁阻效应元件包括：磁阻效应膜，一对电极和相分离层。 磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层，其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。 一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。 相分离层设置在该对电极之间。 相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。 第一和第二相中的一个包括选自氧，氮，氟和碳中的至少一种元素，其浓度高于第一相和第二相中的其它相。