Aminocyclopentane derivative
    52.
    发明授权
    Aminocyclopentane derivative 失效
    氨基环戊烷衍生物

    公开(公告)号:US5684026A

    公开(公告)日:1997-11-04

    申请号:US561947

    申请日:1995-11-22

    CPC分类号: C07D263/52

    摘要: The present invention provides aminocyclopentane derivatives which are saccharide analogs having extremely high .alpha.-glucosidase inhibitory effects and novel structures and expected to be usable or applicable to drugs or agricultural chemicals. An aminocyclopentane derivative represented by the formula (1), wherein R.sub.1 represents H while R.sub.2 represents CH.sub.2 OH, or R.sub.1 represents CH.sub.2 OH while R.sub.2 represents H and R.sub.3 represents a substituted or unsubstituted aryl group or an alkyl, alkenyl, alkynyl or hydroxyalkyl group having 1 to 10 carbon atoms, intermediates for the synthesis of the same, a process for producing the intermediates and a process for producing the aminocyclopentane derivative. ##STR1##

    摘要翻译: 本发明提供了具有非常高的α-葡糖苷酶抑制效果和新颖结构并且预期可用于或适用于药物或农药的糖类似物的氨基环戊烷衍生物。 由式(1)表示的氨基环戊烷衍生物,其中R1表示H,R2表示CH 2 OH,或R 1表示CH 2 OH,而R 2表示H,R 3表示取代或未取代的芳基或烷基,烯基,炔基或羟烷基, 10个碳原子,其合成中间体,中间体的制备方法和氨基环戊烷衍生物的制备方法。

    Superconducting device structure with Pr-Ba-Cu-O barrier layer
    54.
    发明授权
    Superconducting device structure with Pr-Ba-Cu-O barrier layer 失效
    具有Pr-Ba-Cu-O势垒层的超导器件结构

    公开(公告)号:US5441926A

    公开(公告)日:1995-08-15

    申请号:US151024

    申请日:1993-11-12

    IPC分类号: H01L39/22 B05D5/12 H01B12/00

    CPC分类号: H01L39/228

    摘要: A superconducting transistor having a source region and a drain region are formed by a YBCO film on a barrier layer, which is composed of a PBCO film formed on an STO substrate. A gate electrode is disposed on the thinner wall at the back of the STO substrate. In a superconducting transistor so constructed the electric field created by the gate voltage works effectively at an interface with the barrier layer, more carriers can be drawn out relative to the applied gate voltage, and it becomes possible for a large superconduction current to flow.

    摘要翻译: 具有源极区和漏极区的超导晶体管由阻挡层上的YBCO膜形成,该阻挡层由在STO衬底上形成的PBCO膜构成。 栅电极设置在STO衬底背面的较薄壁上。 在如此构造的超导晶体管中,由栅极电压产生的电场在与势垒层的界面处有效地工作,可以相对于施加的栅极电压引出更多的载流子,并且可以使大的超导电流流动。

    Method of and apparatus for manufacturing glass fiber mat
    57.
    发明授权
    Method of and apparatus for manufacturing glass fiber mat 失效
    制造玻璃纤维板的方法和装置

    公开(公告)号:US5129131A

    公开(公告)日:1992-07-14

    申请号:US617985

    申请日:1990-11-26

    IPC分类号: B29C70/08 B29C70/50 D04H1/00

    摘要: In a method of and an apparatus for manufacturing a glass fiber mat, bundles of glass fibers shake down onto a conveyor unit arranged horizontally, to form a non-oriented fiber layer. The non-oriented fiber layer is dried by a drier. Bundles of uni-directional fibers are supplied onto the dried non-oriented fiber layer, by a bundle supply device, to laminate the uni-directional fiber layer onto the dried non-oriented fiber layer. At the laminating, the bundles of uni-directional fibers are guided in parallel relation to each other at regular intervals in a widthwise direction of the conveyor unit. The uni-directional and non-oriented fiber layers, which are laminated one upon the other, are supplied to a needler and are needled thereby, to form the glass fiber mat. The glass fiber mat is carried out by a delivery roller unit.

    LDD MOS device having an element separation region having an
electrostatic screening electrode
    58.
    发明授权
    LDD MOS device having an element separation region having an electrostatic screening electrode 失效
    具有具有静电屏蔽电极的元件分离区域的LDD MOS器件

    公开(公告)号:US4998161A

    公开(公告)日:1991-03-05

    申请号:US446560

    申请日:1989-12-05

    CPC分类号: H01L29/402 H01L27/10805

    摘要: In an element forming region (10) of a semiconductor substrate (1), there are provided a gate electrode (2), sidewall insulating films (4), impurity diffusion regions (5a and 5b) of a lower concentration having their one ends are overlapped with the side sections of the gate electrode (2), and impurity diffusion regions (6a and 6b) of a higher concentration having their one ends are overlapped with the side sections of the sidewall insulating films (4). In an element isolation region (7) of the semiconductor substrate, there are formed an electrostatic screening electrode (31) for element isolation and an insulating film (30) substantially enclosing the electrostatic screening electrode. By employing the electrostatic screening electrode (31) for element isolation in the LDD MOS transistor, there is obtained a semiconductor device of high performance and reliability which is free from intrusion of impurities from the element isolation region.

    摘要翻译: 在半导体衬底(1)的元件形成区域(10)中,设置有栅电极(2),侧壁绝缘膜(4),具有其一端的较低浓度的杂质扩散区域(5a和5b) 与栅极(2)的侧部重叠,并且具有一端的较高浓度的杂质扩散区(6a和6b)与侧壁绝缘膜(4)的侧部重叠。 在半导体衬底的元件隔离区域(7)中,形成用于元件隔离的静电屏蔽电极(31)和基本上包围静电屏蔽电极的绝缘膜(30)。 通过在LDD MOS晶体管中采用用于元件隔离的静电屏蔽电极(31),可以获得高性能和可靠性的半导体器件,其不会从元件隔离区域侵入杂质。

    Dental chuckless handpiece
    60.
    发明授权
    Dental chuckless handpiece 失效
    牙科无夹头手机

    公开(公告)号:US4941828A

    公开(公告)日:1990-07-17

    申请号:US213925

    申请日:1988-06-30

    申请人: Hiroshi Kimura

    发明人: Hiroshi Kimura

    IPC分类号: A61C1/05 A61C1/14 A61C3/02

    CPC分类号: A61C3/02 A61C1/05 A61C1/141

    摘要: A dental chuckless handpiece of the compressed air drive type includes a body having a head in which bearings are attached to the upper and lower portions of a shaft provided with a turbine impeller, and a rotary member fixedly provided to the lower end of the shaft is mounted in place through the upper and lower bearings. At least portions of the body excepting the head is formed of a synthetic resin discriminably colored with a color including transparent color.

    摘要翻译: 压缩空气驱动式的牙齿无夹头手柄包括具有头部的主体,其中轴承附接到设置有涡轮叶轮的轴的上部和下部,并且固定地设置在轴的下端的旋转构件是 通过上下轴承安装就位。 除了头部之外的身体的至少部分由合成树脂形成,所述合成树脂被分辨地着色为具有透明颜色的颜色。