公开(公告)号：US06761984B2

公开(公告)日：2004-07-13

申请号：US10168253

申请日：2002-09-23

申请人： Toshiaki Anzaki ,  Daisuke Arai ,  Yoshifumi Kijima

发明人： Toshiaki Anzaki ,  Daisuke Arai ,  Yoshifumi Kijima

IPC分类号： B32B900

CPC分类号： C23C14/083 ,  B01J35/002 ,  B01J35/004 ,  B01J37/34 ,  C23C14/06 ,  C23C14/08 ,  C23C14/3414 ,  C23C14/3464

摘要： This invention relates to an article having a substrate with a photocatalyst coating film formed thereon by ae sputtering method, characterized in that the photocatalyst coating film comprises titanium oxide as a main component and at least one kind of metal having a sputtering rate for Ar being 0.9 to 2.7 times that of Ti, preferably at least one kind of metal selected from the group consisting of Fe, V, Mo, Nb, Al and Cr, in an amount of 0.01 to 10 wt % in terms of the sum of such metals. The coating film is formed by a method using a Ti metal sputtering target or a Ti sub-oxide sputtering target containing the metal in an amount of 0.01 to 10 wt % in terms of the sum of such metals, or a method using two kinds of targets for two sputtering cathodes and applying reversing potential so as to have a cathode and an anode alternately.

摘要翻译： 本发明涉及具有通过溅射法在其上形成的光催化剂涂膜的基板的制品，其特征在于，所述光催化剂涂膜包含氧化钛作为主要成分，并且至少一种具有Ar的溅射速率的金属为0.9 至Ti，优选选自Fe，V，Mo，Nb，Al和Cr中的至少一种金属的2.7倍，相对于这些金属的总量为0.01〜10重量％。 通过使用含有该金属的0.01〜10重量％的金属的Ti金属溅射靶或Ti亚氧化物溅射靶的方法形成涂膜，或者使用两种 用于两个溅射阴极并且施加反向电位以交替地具有阴极和阳极。

公开(公告)号：US06697437B1

公开(公告)日：2004-02-24

申请号：US09506486

申请日：2000-02-18

申请人： Daisuke Arai ,  Masahiro Uno

发明人： Daisuke Arai ,  Masahiro Uno

IPC分类号： H04L2706

CPC分类号： H04L27/2273 ,  H04L2027/0028 ,  H04L2027/0055 ,  H04L2027/0067

摘要： Apparatus for carrying out correction of a received frequency at a time of receiving a digitally modulated signal includes a phase judging circuit for judging a phase of a received signal symbol in terms of a predetermined number of quantization, a phase difference detecting circuit for detecting a phase difference between phase judged samples judged by the phase judging circuit and an averaging circuit for averaging a detecting output of the phase difference detecting circuit, whereby it is possible to control an output frequency of a frequency synthesizer based on the averaging circuit output.

摘要翻译： 用于在接收数字调制信号时对接收频率进行校正的装置包括：相位判断电路，用于根据预定量化量判断接收信号符号的相位;相位差检测电路，用于检测相位 由相位判断电路判断的相位判断样本之间的差异和用于平均相位差检测电路的检测输出的平均电路，由此可以基于平均电路输出来控制频率合成器的输出频率。

公开(公告)号：US06473235B2

公开(公告)日：2002-10-29

申请号：US09783331

申请日：2001-02-15

申请人： Takayuki Toyoshima ,  Daisuke Arai ,  Toshiaki Anzaki ,  Etsuo Ogino

发明人： Takayuki Toyoshima ,  Daisuke Arai ,  Toshiaki Anzaki ,  Etsuo Ogino

IPC分类号： G02B110

CPC分类号： G06F3/045 ,  B32B17/10018 ,  B32B17/10174

摘要： A transparent touch panel substrate comprising a transparent substrate and deposited thereon a transparent conductive metal oxide film which contains zinc, indium, and tin as metallic elements and is soluble in acids. The transparent conductive metal oxide film preferably contains zinc in an amount of from 40 to 65 atomic % based on all metals and contains indium in an amount of from 0.25 to 1.3 times the amount of tin on an atomic basis. The film preferably has a thickness of from 100 to 160 nm. Unlike the conventional substrate for resistive film type transparent touch panels which comprises a glass plate coated with a transparent conductive ITO film, the touch panel substrate of the invention combines three properties: high light transmittance; ease of processing in forming a transparent electrode by acid etching; and the transparent conductive film has a moderate sheet resistance of from 500 to 5,000&OHgr;. It therefore realizes a touch panel which combines the three functions of having satisfactory display quality, being of the power-saving type, and enabling touch switch operations to be conducted without fail.

摘要翻译： 一种透明触摸面板基板，包括透明基板并且在其上沉积有透明导电金属氧化物膜，其包含锌，铟和锡作为金属元素并且可溶于酸。 透明导电性金属氧化物膜优选含有相对于所有金属为40〜65原子％的量的锌，其含有锡原子量的0.25〜1.3倍的铟。 该膜优选具有100至160nm的厚度。 不同于传统的电阻膜型透明触摸屏基板，其包括涂有透明导电ITO膜的玻璃板，本发明的触摸面板基板结合了三种性能：高透光率; 通过酸蚀刻形成透明电极的易加工性; 并且透明导电膜具有500至5,000OMEGA的适度的薄层电阻。 因此，实现了具有令人满意的显示质量，省电型的功能和能够不间断地进行触摸开关操作的三个功能的触摸面板。

公开(公告)号：US6010549A

公开(公告)日：2000-01-04

申请号：US83986

申请日：1998-05-22

申请人： Kenji Higashi ,  Shinji Katayama ,  Daisuke Arai

发明人： Kenji Higashi ,  Shinji Katayama ,  Daisuke Arai

IPC分类号： F01N1/08 ,  F01N3/06 ,  F01N13/20 ,  B01D50/00

CPC分类号： F01N13/20 ,  F01N13/002 ,  F01N13/185 ,  F01N3/06 ,  F01N2450/20 ,  F01N2590/06 ,  Y10S55/20

摘要： A spark arrester includes a buffer plate against which exhaust gases discharged from the outlet end of a tail pipe strike directly. Upon impingement on the buffer plate, the exhaust gases become turbulent or agitated whereupon temperature distribution of the exhaust gases is made uniform. The buffer plate has a plurality of through-holes arranged to allow passage of the exhaust gases after the exhaust gases impinge against the buffer plate. After passing through the through-holes, the exhaust gases flow through a wire screen during which time sparks in the exhaust gases are caught by the wire screen. The exhaust gases are then guided downstream along a guide tube and finally released from an outlet end of the guide tube. A stream of exhaust gases discharged from the guide tube has only a limited length of high-temperature zone.

摘要翻译： 火花放电器包括缓冲板，从尾管的出口端排出的废气直接撞击。 在冲击缓冲板时，排气变得湍流或搅动，从而排气的温度分布均匀。 缓冲板具有多个通孔，其布置成在废气撞击缓冲板之后允许废气通过。 在通过通孔之后，废气流过丝网，在此期间，废气中的火花被电线屏蔽。 废气然后沿导管向下游引导，最后从引导管的出口端释放出来。 从导管排出的废气流仅具有有限的高温区域。

公开(公告)号：US20180152576A1

公开(公告)日：2018-05-31

申请号：US15825615

申请日：2017-11-29

申请人： Daisuke Arai

发明人： Daisuke Arai

IPC分类号： H04N1/00 ,  G03G15/00

CPC分类号： H04N1/00785 ,  G03G15/0121 ,  G03G15/231 ,  G03G15/6555 ,  G03G15/6567 ,  H04N1/00702

摘要： An image forming apparatus includes an image forming device, a detector and a holding body. The image forming device is configured to perform an image formation to a sheet. The detector is configured to detect a position of a first image formed on a first surface of the sheet through the image formation of the image forming device. The holding body is configured to move while holding the sheet, by performing one of a rotation in a radial direction about a support shaft attached thereto in a direction perpendicular to an axial direction thereof and a lateral shift in a width direction of the sheet, operable to correct the position of the sheet based on a detection result obtained by the detector.

公开(公告)号：US08587087B2

公开(公告)日：2013-11-19

申请号：US13060737

申请日：2010-02-25

申请人： Daisuke Arai ,  Yoshito Nakazawa ,  Norio Hosoya

发明人： Daisuke Arai ,  Yoshito Nakazawa ,  Norio Hosoya

IPC分类号： H01L29/74

CPC分类号： H01L29/7395 ,  H01L24/05 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/66333 ,  H01L2224/04042 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/00

摘要： In order to improve characteristics of an IGBT, particularly, to reduce steady loss, turn-off time and turn-off loss, a thickness of a surface semiconductor layer is set to about 20 nm to 100 nm in an IGBT including: a base layer; a buried insulating film provided with an opening part; the surface semiconductor layer connected to the base layer below the opening part; a p type channel forming layer formed in the surface semiconductor layer; an n+ type source layer; a p+ type emitter layer; a gate electrode formed over the surface semiconductor layer via a gate insulating film; an n+ type buffer layer; and a p type collector layer.

摘要翻译： 为了改善IGBT的特性，特别是为了减少稳定损耗，关断时间和关断损耗，在包括基底层的IGBT中，表面半导体层的厚度设定为约20nm至100nm ; 设置有开口部的埋入绝缘膜; 所述表面半导体层在所述开口部的下方与所述基底层连接; 形成在所述表面半导体层中的p型沟道形成层; n +型源层; p +型发射极层; 栅电极，经由栅极绝缘膜形成在所述表面半导体层上; n +型缓冲层; 和p型集电体层。

公开(公告)号：US20120049187A1

公开(公告)日：2012-03-01

申请号：US13219662

申请日：2011-08-27

申请人： Masamitsu HARUYAMA ,  Tatsuhiro Seki ,  Daisuke Arai

发明人： Masamitsu HARUYAMA ,  Tatsuhiro Seki ,  Daisuke Arai

IPC分类号： H01L27/07

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7808 ,  H01L29/7811 ,  H01L29/866

摘要： Accompanying the miniaturization of a gate electrode of a trench gate power MOSFET, the curvature of the bottom part of the trench increases, and thereby, electric fields concentrate on the part and deterioration of a gate oxide film (insulating film) occurs. The deterioration of the gate insulating film is more likely to occur when the gate side bias is negative in the case of an N-channel type power MOSFET and when the gate side bias is positive in the case of a P-channel type power MOSFET.The present invention is a semiconductor device including an insulating gate power transistor etc. in a chip, wherein a gate protection element includes a bidirectional Zener diode and the bidirectional Zener diode has a plurality of P-type impurity regions (or a P-type impurity region) having different concentrations so that the withstand voltage with its gate side negatively biased and the withstand voltage with the gate side positively biased are different from each other.

摘要翻译： 随着沟槽栅极功率MOSFET的栅电极的小型化，沟槽底部的曲率增加，从而电场集中在该部分上，并且发生栅极氧化膜（绝缘膜）的劣化。 当在N沟道型功率MOSFET的情况下栅极侧偏压为负，并且在P沟道型功率MOSFET的情况下栅极侧偏压为正时，更可能发生栅极绝缘膜的劣化。 本发明是一种在芯片中包括绝缘栅功率晶体管等的半导体器件，其中栅极保护元件包括双向齐纳二极管，双向齐纳二极管具有多个P型杂质区（或P型杂质 区域）具有不同的浓度，使得其栅极侧的耐受电压被负偏置，并且具有正极偏置的栅极侧的耐受电压彼此不同。

公开(公告)号：US07773613B2

公开(公告)日：2010-08-10

申请号：US12333431

申请日：2008-12-12

申请人： Daisuke Arai ,  Kenji Hori ,  Akira Idoue ,  Takeshi Kouyama ,  Jun Endou

发明人： Daisuke Arai ,  Kenji Hori ,  Akira Idoue ,  Takeshi Kouyama ,  Jun Endou

IPC分类号： H04L12/56

CPC分类号： H04L12/413

摘要： A switch 1 having a tag VLAN function includes a plurality of physical ports P1, P2 . . . , and adds an ID tag unique to each physical port to the header of a packet received by the physical port and sends the packet, and on the other hand, refers to an ID tag attached to a packet received from a GW 2 and sends the packet to a physical port corresponding to the ID tag. The GW 2 searches for a server address corresponding to the ID tag attached to the packet received from the switch 1 and modifies a destination address of the packet into the server address. In addition, the GW 2 attaches an ID tag corresponding to a source address of the packet received from the shared server 3 to the received packet, and modifies the source address of the packet into a GW address.

摘要翻译： 具有标签VLAN功能的交换机1包括多个物理端口P1，P2。 。 。 并且将每个物理端口唯一的ID标签添加到由物理端口接收的分组的报头，并发送该分组，另一方面是附加到从GW2接收的分组的ID标签，并发送 分组到与ID标签对应的物理端口。 GW 2搜索与从交换机1接收到的分组相关联的ID标签对应的服务器地址，并将分组的目的地地址修改为服务器地址。 另外，GW2将从共享服务器3接收到的分组的源地址对应的ID标签附加到接收到的分组，并将分组的源地址修改为GW地址。

公开(公告)号：US20080038541A1

公开(公告)日：2008-02-14

申请号：US11796249

申请日：2007-04-27

申请人： Akira Fujisawa ,  Daisuke Arai ,  Kiyotaka Ichiki ,  Yukio Sueyoshi ,  Toru Yamamoto ,  Tsuyoshi Otani

发明人： Akira Fujisawa ,  Daisuke Arai ,  Kiyotaka Ichiki ,  Yukio Sueyoshi ,  Toru Yamamoto ,  Tsuyoshi Otani

IPC分类号： B32B3/30

CPC分类号： B60R16/0207 ,  C03C17/245 ,  C03C17/3417 ,  C03C17/3452 ,  C03C2217/211 ,  C03C2217/241 ,  C03C2218/15 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/407 ,  C23C16/545 ,  H01B7/08 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/26

摘要： The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.

摘要翻译： 本发明提供了一种以广泛的区域和长时间的高成膜速度形成含有金属氧化物作为主要成分的膜的方法，其膜厚相对均匀。 本发明是通过热分解法以膜沉积速率形成含有金属氧化物作为主要成分的薄膜的方法，该方法使用含有金属氯化物，氧化物质和氯化氢的混合气流在基板上形成 4500nm / min。 或更大，执行选自以下的至少一种：1）在混合气流中混合金属氯化物和氧化物质之前，使氯化氢与选自金属氯化物和氧化物质的至少一种接触，以及2）形成 预先在其上形成有以金属氧化物为主成分的薄膜的基板的表面上预先形成缓冲层。

公开(公告)号：US07259085B2

公开(公告)日：2007-08-21

申请号：US10496487

申请日：2002-12-03

申请人： Akira Fujisawa ,  Daisuke Arai ,  Kiyotaka Ichiki ,  Yukio Sueyoshi ,  Toru Yamamoto ,  Tsuyoshi Otani

发明人： Akira Fujisawa ,  Daisuke Arai ,  Kiyotaka Ichiki ,  Yukio Sueyoshi ,  Toru Yamamoto ,  Tsuyoshi Otani

IPC分类号： H01L21/443 ,  C23C16/40

CPC分类号： B60R16/0207 ,  C03C17/245 ,  C03C17/3417 ,  C03C17/3452 ,  C03C2217/211 ,  C03C2217/241 ,  C03C2218/15 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/407 ,  C23C16/545 ,  H01B7/08 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/26

摘要： The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.

摘要翻译： 本发明提供了一种以广泛的区域和长时间的高成膜速度形成含有金属氧化物作为主要成分的膜的方法，其膜厚相对均匀。 本发明是通过热分解法以膜沉积速率形成含有金属氧化物作为主要成分的薄膜的方法，该方法使用含有金属氯化物，氧化物质和氯化氢的混合气流在基板上形成 4500nm / min。 或更大，执行选自以下的至少一种：1）在混合气流中混合金属氯化物和氧化物质之前，使氯化氢与选自金属氯化物和氧化物质的至少一种接触，以及2）形成 预先在其上形成有以金属氧化物为主成分的薄膜的基板的表面上预先形成缓冲层。