公开(公告)号：US6054910A

公开(公告)日：2000-04-25

申请号：US260271

申请日：1999-03-02

申请人： Hitoshi Tada ,  Hiromi Ogura

发明人： Hitoshi Tada ,  Hiromi Ogura

IPC分类号： H01P1/205 ,  H01P7/04 ,  H01P1/202

CPC分类号： H01P1/2056

摘要： A dielectric filter comprising: a dielectric block including a first elongated sub-block and a second elongated sub-block each having a corresponding pair of longitudinally opposing end faces, and an outer surface, said sub-blocks being disposed adjacent one another; a first longitudinally extending through-hole disposed between the first pair of longitudinally opposing end faces of said first sub-block, the first through-hole having two outer ends and an inner surface; a first inner conductor formed on the inner surface of said first through-hole, said first inner conductor having outer ends; an outer conductor formed on the outer surface of said dielectric block but not electrically coupled to the outer ends of the first inner conductor such that the outer ends of the first inner conductor are open-circuited; a first connection conductor through which a predetermined part of the first inner conductor between its outer ends is connected to said outer conductor; a second longitudinally extending through-hole disposed between the second pair of longitudinally opposing end faces of said second sub-block, the second through-hole having two outer ends and an inner surface; a second inner conductor formed on the inner surface of said second through-hole, said second inner conductor being electrically connected to said outer conductor at its outer ends such that they are short-circuited, said inner conductor having a pair of open-circuited inner ends disposed at a predetermined location between its two outer ends, wherein said first and second sub-blocks of said dielectric block are longitudinally shifted relative to one another.

摘要翻译： 一种介质滤波器，包括：介质块，包括第一细长子块和第二细长子块，每个子块具有相应的一对纵向相对的端面和外表面，所述子块彼此相邻布置; 第一纵向延伸通孔，设置在所述第一子块的所述第一对纵向相对端面之间，所述第一通孔具有两个外端和内表面; 形成在所述第一通孔的内表面上的第一内导体，所述第一内导体具有外端; 形成在所述介质块的外表面上但不电耦合到所述第一内导体的外端的外导体，使得所述第一内导体的外端开放; 第一连接导体，其外端之间的第一内导体的预定部分通过该第一连接导体连接到所述外导体; 第二纵向延伸的通孔，设置在所述第二子块的所述第二对纵向相对端面之间，所述第二通孔具有两个外端和内表面; 形成在所述第二通孔的内表面上的第二内部导体，所述第二内部导体在其外端电连接到所述外部导体，使得它们被短路，所述内部导体具有一对开路的内部导体 端部设置在其两个外端之间的预定位置处，其中所述介质块的所述第一和第二子块相对于彼此纵向移位。

公开(公告)号：US5912603A

公开(公告)日：1999-06-15

申请号：US761984

申请日：1996-12-11

申请人： Hitoshi Tada ,  Hiromi Ogura

发明人： Hitoshi Tada ,  Hiromi Ogura

IPC分类号： H01P1/205 ,  H01P7/04

CPC分类号： H01P1/2056

摘要： A dielectric filter includes: a dielectric block having a pair of opposing end faces; a through-hole formed between the pair of opposing end faces of the dielectric block; an inner conductor formed on the inner surface of the through-hole, the inner conductor being open-circuited at both its ends; an outer conductor formed on the outer surface of the dielectric block; and a connection conductor by which a central part of the inner conductor between its two opposing ends is connected to the outer conductor. Although the dielectric filter is composed of the single dielectric block, it behaves as a band-elimination filter having pass-bands around the elimination-band centered at a trap frequency wherein elimination occurs at both edges of the pass-bands.

摘要翻译： 介质滤波器包括：介质块，具有一对相对的端面; 形成在介电块的一对相对端面之间的通孔; 形成在所述通孔的内表面上的内导体，所述内导体在其两端开放; 形成在介质块的外表面上的外部导体; 以及连接导体，通过该连接导体，其两个相对端之间的内部导体的中心部分连接到外部导体。 虽然介质滤波器由单个介质块组成，但其作为带通滤波器，其作用是以在陷波频率为中心的消除频带周围具有通带，其中消除发生在通带的两个边缘处。

公开(公告)号：US5612654A

公开(公告)日：1997-03-18

申请号：US377394

申请日：1995-01-24

申请人： Tatsuya Tsujiguchi ,  Hitoshi Tada

发明人： Tatsuya Tsujiguchi ,  Hitoshi Tada

IPC分类号： H01P1/205 ,  H01P1/212 ,  H01P7/04 ,  H01P1/202

CPC分类号： H01P1/2056

摘要： In a dielectric block, resonator holes have steps thereby providing a portion having a larger inner diameter and a portion having a smaller inner diameter, and the smaller inner diameter portion of each resonator hole is formed on the side of a short-circuited end surface. By forming the small inner diameter portions of the resonator holes relatively close to each other, the coupling between the two resonators becomes inductive coupling. By contrast, when small inner diameter portions are formed further apart from each other, the coupling between the two resonators becomes capacitive coupling. The coupling strength can be changed by adjusting the distance between the small inner diameter portions.

摘要翻译： 在介质块中，谐振器孔具有台阶，从而提供具有较大内径的部分和具有较小内径的部分，并且每个谐振器孔的较小内径部分形成在短路端面的一侧。 通过形成相对靠近的谐振器孔的小内径部分，两个谐振器之间的耦合变成电感耦合。 相反，当较小的内径部分彼此分开形成时，两个谐振器之间的耦合变为电容耦合。 可以通过调节小内径部分之间的距离来改变联接强度。

公开(公告)号：US5390205A

公开(公告)日：1995-02-14

申请号：US58366

申请日：1993-05-10

申请人： Kenzo Mori ,  Tadashi Kimura ,  Yoshitatu Kawama ,  Nobuaki Kaneno ,  Tatuya Kimura ,  Yuji Okura ,  Hitoshi Tada

发明人： Kenzo Mori ,  Tadashi Kimura ,  Yoshitatu Kawama ,  Nobuaki Kaneno ,  Tatuya Kimura ,  Yuji Okura ,  Hitoshi Tada

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/2059 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2201 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/32391 ,  Y10S148/095

摘要： A semiconductor laser includes a first conductivity type semiconductor substrate; a double-heterojunction structure including a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer successively disposed on the semiconductor substrate; two parallel stripe grooves forming the double-heterojunction structure in a mesa shape; a first conductivity type mesa embedding layer, a second conductivity type current blocking layer, and a first conductivity type current blocking layer successively disposed on the semiconductor substrate and contacting opposite sides of the mesa; and impurity doped regions formed by adding an impurity through the surface of the first conductivity type current blocking layer. The impurity doped regions electrically separate an upper part of the mesa from the second conductivity type current blocking layer at opposite sides of the mesa. Since the second conductivity type current blocking layer is not in contact with the mesa structure, no leakage current path is formed in the laser structure.

摘要翻译： 半导体激光器包括第一导电型半导体衬底; 包括依次设置在所述半导体衬底上的第一导电型包覆层，有源层和第二导电型包层的双异质结结构; 两个平行的条纹槽形成台状形状的双异质结结构; 依次设置在半导体衬底上并接触台面相对两侧的第一导电型台面埋置层，第二导电型电流阻挡层和第一导电型电流阻挡层; 以及通过在第一导电型电流阻挡层的表面添加杂质而形成的杂质掺杂区域。 杂质掺杂区域在台面的相对侧将台面的上部与第二导电型电流阻挡层电隔离。 由于第二导电型电流阻挡层不与台面结构接触，所以在激光器结构中不形成漏电流路径。

公开(公告)号：US20100003778A1

公开(公告)日：2010-01-07

申请号：US12274435

申请日：2008-11-20

申请人： Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

发明人： Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

IPC分类号： H01L33/00

CPC分类号： H01S5/22 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2214 ,  H01S5/2224

摘要： A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.

摘要翻译： 半导体激光器的制造方法包括在半导体基板上依次形成第一导电型半导体层，有源层和第二导电型半导体层， 在第二导电类型半导体层中形成脊; 在第一温度下在第二导电类型半导体层上形成第一绝缘膜; 在低于第一温度的第二温度下在第一绝缘膜上形成第二绝缘膜; 以及在所述第二绝缘膜上形成电极。

公开(公告)号：US20080226223A1

公开(公告)日：2008-09-18

申请号：US12123531

申请日：2008-05-20

申请人： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

发明人： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

IPC分类号： G02B6/12 ,  H01L21/00

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02F1/025 ,  G02F2202/32 ,  H01L2933/0083 ,  H01S5/0424 ,  H01S5/105 ,  H01S5/1085 ,  H01S5/2004 ,  H01S5/3054 ,  H01S5/32

摘要： A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

摘要翻译： 半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。 在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。 板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

公开(公告)号：US20050029536A1

公开(公告)日：2005-02-10

申请号：US10852180

申请日：2004-05-25

申请人： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

发明人： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

IPC分类号： H01S5/20 ,  G02B6/122 ,  H01S5/042 ,  H01L33/00

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02F1/025 ,  G02F2202/32 ,  H01L2933/0083 ,  H01S5/0424 ,  H01S5/105 ,  H01S5/1085 ,  H01S5/2004 ,  H01S5/3054 ,  H01S5/32

摘要： A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

摘要翻译： 半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。 在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。 板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

公开(公告)号：US06778751B2

公开(公告)日：2004-08-17

申请号：US09817058

申请日：2001-03-27

申请人： Hitoshi Tada ,  Kazuhisa Takagi

发明人： Hitoshi Tada ,  Kazuhisa Takagi

IPC分类号： G02B610

CPC分类号： G02F1/025 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/42

摘要： An optical waveguide ridge has a side with a flat portion extending uniformly from a top of the ridge to a surface of a semiconductor substrate, the flat portion being in contact with an exposed surface of the substrate. A p-type electrode extends from the top of the optical waveguide ridge downward in contact with a dielectric film on the flat portion of the optical waveguide ridge. The p-type electrode further extends over the dielectric film onto the exposed surface of the semiconductor substrate where an end of the electrode is a bonding pad.

摘要翻译： 光波导脊具有从脊的顶部到半导体基板的表面均匀延伸的平坦部分的一侧，平坦部分与基板的暴露表面接触。 p型电极从光波导脊的顶部向下延伸，与光波导脊的平坦部分上的电介质膜接触。 p型电极进一步在电介质膜上延伸到半导体衬底的露出表面上，其中电极的端部是焊盘。

公开(公告)号：US06359529B1

公开(公告)日：2002-03-19

申请号：US08998252

申请日：1997-12-24

申请人： Kikuo Tsunoda ,  Hitoshi Tada

发明人： Kikuo Tsunoda ,  Hitoshi Tada

IPC分类号： H01P1213

CPC分类号： H01P1/2135 ,  H01P1/2136

摘要： The invention provides a filtering device of the transmission-reception switched type which can be constructed in a form with a reduced size at a low cost without having to use circuit elements such as a capacitor, a coil, and a transmission line forming a phase shift circuit which are not essential to the filtering device. Inner conductors serving as distributed-parameter resonance lines are formed in a dielectric block. There is provided a coupling line coupled with particular inner conductors. The open-circuited ends of these particular inner conductors are connected to an outer conductor via corresponding diode switches so that transmission and reception filters are switched from each other when either diode switch is selectively turned on.

摘要翻译： 本发明提供了一种发送 - 接收切换型滤波装置，其可以以低成本构成尺寸减小的形式，而不必使用诸如电容器，线圈和形成相移的传输线之类的电路元件 电路对滤波装置不是必需的。 用作分布参数谐振线的内导体形成在介质块中。 提供了与特定内部导体耦合的耦合线。 这些特定内部导体的开路端通过相应的二极管开关连接到外部导体，使得当二极管开关选择性地导通时，发射和接收滤波器彼此切换。

公开(公告)号：US06226310B1

公开(公告)日：2001-05-01

申请号：US09032784

申请日：1998-03-02

申请人： Kazuhisa Takagi ,  Hitoshi Tada

发明人： Kazuhisa Takagi ,  Hitoshi Tada

IPC分类号： H01S319

CPC分类号： H01S5/0265 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2275

摘要： A semiconductor optical device includes a semiconductor laser region for producing laser light and having a first optical waveguide mesa structure including a first active layer and a diffraction grating, and first current blocking layers adjacent to opposite sides; a light modulator region for modulating the laser light and having a second optical waveguide mesa structure continuous with the first optical waveguide mesa structure and including a second active layer, and second current blocking layers adjacent to opposite sides; and a window region for propagating the laser light modulated by the light modulator region and having a mesa-shaped window structure continuous with the second optical waveguide mesa structure, the mesa width of the window structure being larger than the mesa width of the second optical waveguide mesa structure. The light is prevented from leaking from the window and reaching the interface of the window structure and a burying layer adjacent to the window structure. The laser light is not reflected at the interface of the window structure and the buried layer. The shape of the beam of laser light emitted from the window structure is not distorted, resulting in a satisfactory connection to an optical system.

摘要翻译： 半导体光学器件包括用于产生激光的半导体激光器区域，并具有包括第一有源层和衍射光栅的第一光波导台面结构以及与相对侧相邻的第一电流阻挡层; 用于调制激光并具有与第一光波导台面结构连续并包括第二有源层的第二光波导台面结构的光调制器区域和与相对侧相邻的第二电流阻挡层; 以及窗口区域，用于传播由所述光调制器区域调制的激光，并且具有与所述第二光波导台面结构连续的台面形窗口结构，所述窗口结构的台面宽度大于所述第二光波导的台面宽度 台面结构。 防止光从窗口泄漏并到达窗口结构的界面和与窗户结构相邻的掩埋层。 激光在窗口结构和埋层的界面处不被反射。 从窗结构发射的激光束的形状不变形，导致与光学系统的良好连接。