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    Cosmetic material obtained from a lactic acid fermentation broth
    51.
    发明授权
    Cosmetic material obtained from a lactic acid fermentation broth 失效
    从乳酸发酵液获得的化妆品

    公开(公告)号：US5324515A

    公开(公告)日：1994-06-28

    申请号：US959566

    申请日：1992-10-13

    申请人： Ho Lee ,  Seung G. Yang

    发明人： Ho Lee ,  Seung G. Yang

    IPC分类号： A61K8/96 ,  A61K8/00 ,  A61K8/34 ,  A61K8/49 ,  A61K8/98 ,  A61K8/99 ,  A61K35/74 ,  A61P43/00 ,  A61Q17/00 ,  A61Q19/00 ,  C12P1/04 ,  C12R1/225 ,  C12R1/46 ,  A61K35/00 ,  C12P7/56

    CPC分类号： A61K8/99 ,  A61K8/986 ,  A61Q19/00 ,  A61K2800/85 ,  A61Q19/08 ,  Y10S435/853

    摘要： The present invention provides a cosmetic material which consists of a disintegration phase which is obtained by harvesting lactic acid bacterial cells from the lactic fermentation broth, disintegrating the cells, subjecting the broken cells to centrifugation to give a supernatant and adding to the supernatant 10 .mu.M of 500 .mu.M of at least one metal ions followed by filtration to obtain a filtrate and an extraction phase which is obtained by extracting cell pellets precipitated by the centrifugation step in (a) with water or an organic solvent and a non-ionic surfactant and subjecting the extract to filtration to obtain a filtrate. The cosmetic material of the present invention exhibits properties of scavenging harmful oxygen species, reinforcing DNA repair system of the skin and reinforcing immune systems of the skin. It further comprises mannitols or flavonoids in order to enhancing its ability of scavenging harmful oxygen species.

    摘要翻译： 本发明提供一种化妆品，其由崩解相组成，其通过从乳酸发​​酵液中收集乳酸菌细胞，分解细胞，对破碎的细胞进行离心分离，得到上清液，并加入上清中10μM 至少一种金属离子，然后过滤以获得滤液和提取相，其通过用水或有机溶剂和非离子表面活性剂提取（a）中通过离心步骤沉淀的细胞沉淀物获得， 对提取物进行过滤以获得滤液。 本发明的化妆品具有清除有害氧物质的特性，加强皮肤的DNA修复体系和皮肤的增强免疫系统。 它还包括甘露醇或类黄酮，以增强其清除有害氧物质的能力。

    Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same
    52.
    发明授权
    Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same 有权
    具有具有改善的操作和闪烁噪声特性的模拟晶体管的半导体器件及其制造方法

    公开(公告)号：US08445968B2

    公开(公告)日：2013-05-21

    申请号：US13091327

    申请日：2011-04-21

    申请人： Tetsuji Ueno ,  Hwa-sung Rhee ,  Ho Lee

    发明人： Tetsuji Ueno ,  Hwa-sung Rhee ,  Ho Lee

    IPC分类号： H01L21/70

    CPC分类号： H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/7843 ,  H01L29/7848

    摘要： A semiconductor device with improved transistor operating and flicker noise characteristics includes a substrate, an analog NMOS transistor and a compressively-strained-channel analog PMOS transistor disposed on the substrate. The device also includes a first etch stop liner (ESL) and a second ESL which respectively cover the NMOS transistor and the PMOS transistor. The relative measurement of flicker noise power of the NMOS and PMOS transistors to flicker noise power of reference unstrained-channel analog NMOS and PMOS transistors at a frequency of 500 Hz is less than 1.

    摘要翻译： 具有改善的晶体管操作和闪烁噪声特性的半导体器件包括衬底，模拟NMOS晶体管和设置在衬底上的压缩应变通道模拟PMOS晶体管。 该器件还包括分别覆盖NMOS晶体管和PMOS晶体管的第一蚀刻停止衬垫（ESL）和第二ESL。 在500 Hz频率下，NMOS和PMOS晶体管的闪烁噪声功率相对于参考无约束通道模拟NMOS和PMOS晶体管的闪烁噪声功率的相对测量值小于1。

    Semiconductor device including field effect transistor and method of forming the same
    53.
    发明授权
    Semiconductor device including field effect transistor and method of forming the same 有权
    包括场效晶体管的半导体器件及其形成方法

    公开(公告)号：US07791146B2

    公开(公告)日：2010-09-07

    申请号：US11857157

    申请日：2007-09-18

    申请人： Myung-Sun Kim ,  Hwa-Sung Rhee ,  Tetsuji Ueno ,  Ho Lee ,  Ji-Hye Yi

    发明人： Myung-Sun Kim ,  Hwa-Sung Rhee ,  Tetsuji Ueno ,  Ho Lee ,  Ji-Hye Yi

    IPC分类号： H01L29/76

    CPC分类号： H01L29/665 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

    摘要： A semiconductor device includes a gate insulator and a gate electrode stacked on a substrate, a source/drain pattern which fills a recess region formed at opposite sides adjacent to the gate electrode, the source/drain pattern being made of silicon-germanium doped with dopants and a metal germanosilicide layer disposed on the source/drain pattern. The metal germanosilicide layer is electrically connected to the source/drain pattern. Moreover, a proportion of germanium amount to the sum of the germanium amount and silicon amount in the metal germanosilicide layer is lower than that of germanium amount to the sum of the germanium amount and silicon amount in the source/drain pattern.

    摘要翻译： 半导体器件包括栅极绝缘体和堆叠在衬底上的栅电极，源极/漏极图案填充形成在与栅电极相邻的相对侧的凹陷区域，源极/漏极图案由掺杂有掺杂剂的硅 - 锗构成 和设置在源极/漏极图案上的金属锗硅化物层。 金属锗硅化物层电连接到源极/漏极图案。 此外，与锗源锗排出图案中的锗量和硅量之和的锗量相比，锗量与金锗烷硅化物层中的锗量和硅量之和的比例低。

    CATHETER IMAGING PROBE AND METHOD
    55.
    发明申请
    CATHETER IMAGING PROBE AND METHOD 有权
    导管成像探针和方法

    公开(公告)号：US20100168587A1

    公开(公告)日：2010-07-01

    申请号：US12638927

    申请日：2009-12-15

    申请人： Marc D. Feldman ,  Thomas E. Milner ,  Shaochen Chen ,  Jeehyun Kim ,  Li-Hsin Han ,  Jung-Hwan Oh ,  Ho Lee

    发明人： Marc D. Feldman ,  Thomas E. Milner ,  Shaochen Chen ,  Jeehyun Kim ,  Li-Hsin Han ,  Jung-Hwan Oh ,  Ho Lee

    IPC分类号： A61B6/00

    CPC分类号： A61B5/0084 ,  A61B1/00183 ,  A61B1/3137 ,  A61B5/0066 ,  A61B5/6852 ,  A61B8/12 ,  A61B8/4461 ,  A61N2007/0091

    摘要： A catheter imaging probe for a patient. The probe includes a conduit through with energy is transmitted. The probe includes a first portion through which the conduit extends. The probe includes a second portion which rotates relative to the conduit to redirect the energy from the conduit. A method for imaging a patient. The method includes the steps of inserting a catheter into the patient. There is the step of rotating a second portion of the catheter relative to a conduit extending through a first portion of the catheter, which redirects the energy transmitted through the conduit to the patient and receives the energy reflected back to the second portion from the patient and redirects the reflected energy to the conduit.

    摘要翻译： 用于患者的导管成像探针。 探头包括通过能量传输的导管。 探针包括导管延伸通过的第一部分。 探针包括第二部分，其相对于导管旋转以重新引导来自导管的能量。 一种用于对患者进行成像的方法。 该方法包括将导管插入患者体内的步骤。 存在使导管的第二部分相对于延伸穿过导管的第一部分的导管旋转的步骤，其将通过导管传输的能量重定向到患者并且接收从患者反射回第二部分的能量， 将反射的能量重定向到导管。

    Semiconductor device
    56.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07728393B2

    公开(公告)日：2010-06-01

    申请号：US11492939

    申请日：2006-07-26

    申请人： Hwa-sung Rhee ,  Tetsuji Ueno ,  Ho Lee

    发明人： Hwa-sung Rhee ,  Tetsuji Ueno ,  Ho Lee

    IPC分类号： H01L29/76

    CPC分类号： H01L29/66636 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628

    摘要： A semiconductor device and method of manufacturing the semiconductor device are provided. The semiconductor device may include a semiconductor substrate, a gate insulation layer and a gate electrode, a first spacer, a second spacer, an epitaxial pattern, and/or source/drain regions. The gate insulation layer and the gate electrode may be formed on the semiconductor substrate. The first spacer may be formed on sidewalls of the gate electrode. The second spacer may be formed on sidewalls of the first spacer. The epitaxial pattern may be formed between the second spacer and the semiconductor substrate such that an outside profile of the epitaxial pattern is aligned with an outside profile of the second spacer. The source/drain regions may include primary source/drain regions that are aligned with the first spacer. The primary source/drain regions may be formed in the epitaxial pattern and the semiconductor substrate. The source/drain regions may also include secondary source/drain regions that are aligned with the second spacer and formed in the semiconductor substrate.

    摘要翻译： 提供一种制造半导体器件的半导体器件和方法。 半导体器件可以包括半导体衬底，栅极绝缘层和栅电极，第一间隔物，第二间隔物，外延图案和/或源极/漏极区域。 栅极绝缘层和栅电极可以形成在半导体衬底上。 第一间隔物可以形成在栅电极的侧壁上。 第二间隔件可以形成在第一间隔件的侧壁上。 外延图案可以形成在第二间隔物和半导体衬底之间，使得外延图案的外部轮廓与第二间隔物的外部轮廓对准。 源极/漏极区域可以包括与第一间隔物对准的主要源极/漏极区域。 初级源极/漏极区域可以形成为外延图案和半导体衬底。 源极/漏极区域还可以包括与第二间隔物对准并形成在半导体衬底中的次级源极/漏极区域。

    Catheter imaging probe and method
    57.
    发明授权
    Catheter imaging probe and method 失效
    导管成像探头和方法

    公开(公告)号：US07711413B2

    公开(公告)日：2010-05-04

    申请号：US10548982

    申请日：2004-04-23

    申请人： Marc D. Feldman ,  Thomas E. Milner ,  Shaochen Chen ,  Jeehyun Kim ,  Li-Hsin Han ,  Jung-Hwan Oh ,  Ho Lee

    发明人： Marc D. Feldman ,  Thomas E. Milner ,  Shaochen Chen ,  Jeehyun Kim ,  Li-Hsin Han ,  Jung-Hwan Oh ,  Ho Lee

    IPC分类号： A61B8/00 ,  A61B1/06

    摘要： A catheter imaging probe for a patient. The probe includes a conduit through which energy is transmitted. The probe includes a first portion through which the conduit extends. The probe includes a second portion which rotates relative to the conduit to redirect the energy from the conduit. A method for imaging a patient. The method includes the steps of inserting a catheter into the patient. There is the step of rotating a second portion of the catheter relative to a conduit extending through a first portion of the catheter, which redirects the energy transmitted through the conduit to the patient and receives the energy reflected back to the second portion from the patient and redirects the reflected energy to the conduit.

    摘要翻译： 用于患者的导管成像探针。 探头包括能量传递通过的导管。 探针包括导管延伸通过的第一部分。 探针包括第二部分，其相对于导管旋转以重新引导来自导管的能量。 一种用于对患者进行成像的方法。 该方法包括将导管插入患者体内的步骤。 存在使导管的第二部分相对于延伸穿过导管的第一部分的导管旋转的步骤，其将通过导管传输的能量重定向到患者并且接收从患者反射回第二部分的能量， 将反射的能量重定向到导管。

    Transistor and method of manufacturing the same
    59.
    发明授权
    Transistor and method of manufacturing the same 有权
    晶体管及其制造方法

    公开(公告)号：US07601983B2

    公开(公告)日：2009-10-13

    申请号：US11207703

    申请日：2005-08-19

    申请人： Tetsuji Ueno ,  Hwa-Sung Rhee ,  Ho Lee ,  Dong-Suk Shin ,  Seung-Hwan Lee

    发明人： Tetsuji Ueno ,  Hwa-Sung Rhee ,  Ho Lee ,  Dong-Suk Shin ,  Seung-Hwan Lee

    IPC分类号： H01L29/10

    CPC分类号： H01L29/66636 ,  H01L29/045 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7834

    摘要： A transistor includes a semiconductor substrate that has a first surface of a {100} crystal plane, a second surface of the {100} crystal plane having a height lower than that of the first surface, and a third surface of a {111} crystal plane connecting the first surface to the second surface. First heavily doped impurity regions are formed under the second surface. A gate structure is formed on the first surface. An epitaxial layer is formed on the second surface and the third surface. Second heavily doped impurity regions are formed at both sides of the gate structure. The second heavily doped impurity regions have side faces of the {111} crystal plane so that a short channel effect generated between the impurity regions may be prevented.

    摘要翻译： 晶体管包括具有{100}晶面的第一表面，{100}晶面的第二表面的半导体衬底的高度低于第一表面的第一表面，以及{111}晶体的第三表面 将第一表面连接到第二表面的平面。 在第二表面下形成第一重掺杂杂质区。 栅极结构形成在第一表面上。 在第二表面和第三表面上形成外延层。 在栅极结构的两侧形成第二重掺杂杂质区。 第二重掺杂杂质区域具有{111}晶面的侧面，从而可以防止在杂质区域之间产生的短沟道效应。

    METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING A PLASMA PROCESS WITH NON-SILANE GAS INCLUDING DEUTERIUM
    60.
    发明申请
    METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING A PLASMA PROCESS WITH NON-SILANE GAS INCLUDING DEUTERIUM 有权
    使用含有非硅烷的等离子体工艺制造半导体器件的方法

    公开(公告)号：US20090104741A1

    公开(公告)日：2009-04-23

    申请号：US12248431

    申请日：2008-10-09

    申请人： Dong-Suk Shin ,  Ho Lee ,  Tae-Gyun Kim

    发明人： Dong-Suk Shin ,  Ho Lee ,  Tae-Gyun Kim

    IPC分类号： H01L21/8238 ,  H01L21/336

    CPC分类号： H01L21/8238 ,  H01L21/28176 ,  H01L21/3003 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/8234 ,  H01L21/823475 ,  H01L21/823871 ,  H01L29/665

    摘要： Semiconductor devices are fabricated using a plasma process with a non-silane gas that includes deuterium, and which may result in improved device reliability and/or other improved device operational characteristics. One such method can include forming a gate oxide layer on a transistor region, which is defined on a substrate, and forming a gate electrode on the gate oxide layer. An etch stop layer is formed on the gate oxide layer and the gate electrode. A plasma process is performed on the interface between the gate oxide layer and the substrate using a non-silane treatment gas including deuterium. An interlayer dielectric layer is formed on the etch stop layer. A bottom metal line is formed on the interlayer dielectric layer.

    摘要翻译： 使用包括氘的非硅烷气体的等离子体工艺制造半导体器件，并且其可以导致改进的器件可靠性和/或其他改进的器件操作特性。 一种这样的方法可以包括在限定在衬底上的晶体管区域上形成栅极氧化层，并在栅极氧化物层上形成栅电极。 在栅极氧化物层和栅电极上形成蚀刻停止层。 使用包括氘的非硅烷处理气体在栅极氧化物层和衬底之间的界面上进行等离子体处理。 在蚀刻停止层上形成层间电介质层。 底层金属线形成在层间电介质层上。