利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

100 条记录 (耗时 0.034 秒)

    Quantum interference transistors and methods of manufacturing and operating the same
    51.
    发明申请
    Quantum interference transistors and methods of manufacturing and operating the same 有权
    量子干涉晶体管及其制造和操作方法

    公开(公告)号：US20100090759A1

    公开(公告)日：2010-04-15

    申请号：US12585724

    申请日：2009-09-23

    申请人： Jai-kwang Shin ,  Sun-ae Seo ,  Jong-seob Kim ,  Ki-ha Hong ,  Hyun-jong Chung

    发明人： Jai-kwang Shin ,  Sun-ae Seo ,  Jong-seob Kim ,  Ki-ha Hong ,  Hyun-jong Chung

    IPC分类号： H03H11/24 ,  H01L29/66 ,  H01L21/336

    CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/1029 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/66977

    摘要： A quantum interference transistor may include a source; a drain; N channels (N≧2), between the source and the drain, and having N−1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a graphene sheet. A method of manufacturing the quantum interference transistor may include forming one or more of the N channels using a graphene sheet. A method of operating the quantum interference transistor may include applying a voltage to the at least one gate. The voltage may shift a phase of a wave of electrons passing through a channel at which the at least one gate is disposed.

    摘要翻译： 量子干涉晶体管可以包括源极; 排水 在源极和漏极之间的N沟道（N≥2），源极和漏极之间具有N-1个路径差; 以及设置在所述N个通道中的一个或多个的至少一个门。 N个通道中的一个或多个可以形成在石墨烯片中。 制造量子干涉晶体管的方法可以包括使用石墨烯片形成N个通道中的一个或多个。 操作量子干涉晶体管的方法可以包括向至少一个栅极施加电压。 电压可以使通过通道的电子的波的相位偏移至设置至少一个栅极的通道。

    Chemical sensor using thin-film sensing member
    52.
    发明申请
    Chemical sensor using thin-film sensing member 有权
    化学传感器采用薄膜感应元件

    公开(公告)号：US20100079130A1

    公开(公告)日：2010-04-01

    申请号：US12385284

    申请日：2009-04-03

    申请人： Ki-ha Hong ,  Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin

    发明人： Ki-ha Hong ,  Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin

    IPC分类号： G01N27/00

    CPC分类号： G01N29/036 ,  G01N2291/0257 ,  Y10S977/957

    摘要： Provided is a chemical sensor that may include a first electrode on a substrate, a sensing member covering the first electrode on the substrate, and a plurality of second electrodes on a surface of the sensing member exposing the surface of the sensing member. The chemical sensor may be configured to measure the change in electrical characteristics when a compound to be sensed is adsorbed on the sensing member. Provided also is a chemical sensor array including an array of chemical sensors.

    摘要翻译： 提供了一种化学传感器，其可以包括在基板上的第一电极，覆盖基板上的第一电极的感测构件和暴露感测构件的表面的感测构件的表面上的多个第二电极。 化学传感器可以被配置为当要感测的化合物吸附在感测构件上时测量电特性的变化。 还提供了包括化学传感器阵列的化学传感器阵列。

    Nonvolatile memory devices and methods of operating the same
    55.
    发明申请
    Nonvolatile memory devices and methods of operating the same 有权
    非易失性存储器件及其操作方法

    公开(公告)号：US20080304328A1

    公开(公告)日：2008-12-11

    申请号：US12071451

    申请日：2008-02-21

    申请人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

    发明人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

    IPC分类号： G11C16/06 ,  H01L29/788

    CPC分类号： G11C16/0416 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/0673 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

    摘要： Example embodiments include nonvolatile memory devices that have good operation performance and may be made in a highly integrated structure, and methods of operating the same. Example embodiments of the nonvolatile memory devices include a substrate electrode, and a semiconductor channel layer on the substrate electrode, a floating gate electrode on the substrate electrode, wherein a portion of the floating gate electrode faces the semiconductor channel layer, a control gate electrode on the floating gate electrode, and wherein a distance between a portion of the floating gate electrode and the substrate electrode is smaller than a distance between the semiconductor channel layer and the substrate electrode wherein charge tunneling occurs.

    摘要翻译： 示例性实施例包括具有良好操作性能并且可以以高度集成的结构制造的非易失性存储器件及其操作方法。 非易失性存储器件的示例性实施例包括衬底电极和衬底电极上的半导体沟道层，衬底电极上的浮置栅电极，其中浮置栅电极的一部分面向半导体沟道层，控制栅极电极 所述浮置栅极电极，并且其中所述浮置栅电极的一部分与所述基板电极之间的距离小于半导体沟道层与发生电荷隧道的基板电极之间的距离。

    Oscillators and methods of operating the same
    57.
    发明授权
    Oscillators and methods of operating the same 有权
    振荡器和操作方法相同

    公开(公告)号：US08471640B2

    公开(公告)日：2013-06-25

    申请号：US13064627

    申请日：2011-04-05

    申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

    发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

    IPC分类号： H03B17/00

    CPC分类号： H03B15/006

    摘要： Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.

    摘要翻译： 提供振荡器和操作振荡器的方法，振荡器包括振荡单元，该振荡单元包括至少一个具有磁化方向的磁性层，磁化方向根据从施加的电流，施加的电压和施加的磁体中选择的至少一个而变化 领域。 振荡单元被配置为产生具有设定频率的振荡信号。 振荡器还包括通过差分放大振荡信号来提供输出信号的输出级。

    Oscillators and methods of operating the same
    58.
    发明申请
    Oscillators and methods of operating the same 有权
    振荡器和操作方法相同

    公开(公告)号：US20120112796A1

    公开(公告)日：2012-05-10

    申请号：US13064627

    申请日：2011-04-05

    申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

    发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

    IPC分类号： H03K5/01

    CPC分类号： H03B15/006

    摘要： Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.

    摘要翻译： 提供振荡器和操作振荡器的方法，振荡器包括振荡单元，该振荡单元包括至少一个具有磁化方向的磁性层，磁化方向根据从施加的电流，施加的电压和施加的磁体中选择的至少一个而变化 领域。 振荡单元被配置为产生具有设定频率的振荡信号。 振荡器还包括通过差分放大振荡信号来提供输出信号的输出级。

    Logic device and method of operating the same
    60.
    发明授权
    Logic device and method of operating the same 有权
    逻辑器件及其操作方法

    公开(公告)号：US08963580B2

    公开(公告)日：2015-02-24

    申请号：US13597732

    申请日：2012-08-29

    申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Ki-chul Kim ,  Jai-kwang Shin ,  Joong-ho Choi ,  Hyung-su Jeong

    发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Ki-chul Kim ,  Jai-kwang Shin ,  Joong-ho Choi ,  Hyung-su Jeong

    IPC分类号： H03K19/173 ,  H03K19/177

    CPC分类号： H03K19/17756

    摘要： A logic device may include a first functional block, the first functional block including, a first storage block, a second storage block, and a first function controller. In a first operation time period, the first function controller may be configured to receive a first configuration selection signal and a first configuration command signal that instructs a first function be configured, select the first storage block as a configured storage block in the first operation time period based on the first configuration selection signal, and configure the first function in the first storage block based on the first configuration command signal.

    摘要翻译： 逻辑设备可以包括第一功能块，第一功能块包括第一存储块，第二存储块和第一功能控制器。 在第一操作时间段中，第一功能控制器可以被配置为接收第一配置选择信号和指示第一功能的第一配置命令信号，在第一操作时间中选择第一存储块作为配置的存储块 基于第一配置选择信号，并且基于第一配置命令信号来配置第一存储块中的第一功能。