Method for Manufacturing a Semiconductor Device

    公开(公告)号:US20190148217A1

    公开(公告)日:2019-05-16

    申请号:US16192277

    申请日:2018-11-15

    Abstract: An embodiment of a method for manufacturing a semiconductor device includes: providing a monocrystalline semiconductor substrate having a first side; forming a plurality of recess structures in the semiconductor substrate at the first side; filling the recess structures with a dielectric material to form dielectric islands in the recess structures; forming a semiconductor layer on the first side of the semiconductor substrate to cover the dielectric islands; and subjecting the semiconductor layer to heat treatment and recrystallizing the semiconductor layer to form a recrystallized semiconductor layer, so that a crystal structure of the recrystallized semiconductor layer adapts to a crystal structure of the semiconductor substrate, and so that the semiconductor substrate and the semiconductor layer together form a compound wafer with the dielectric islands at least partially buried in the semiconductor material of the compound wafer.

    SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESA INCLUDING A CONSTRICTION
    57.
    发明申请
    SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESA INCLUDING A CONSTRICTION 有权
    具有半导体MESA的半导体器件,包括一个约束

    公开(公告)号:US20150295034A1

    公开(公告)日:2015-10-15

    申请号:US14248371

    申请日:2014-04-09

    Abstract: A semiconductor device includes a body zone in a semiconductor mesa, which is formed between neighboring control structures that extend from a first surface into a semiconductor body. A drift zone forms a first pn junction with the body zone. In the semiconductor mesa, the drift zone includes a first drift zone section that includes a constricted section of the semiconductor mesa. A minimum horizontal width of the constricted section parallel to the first surface is smaller than a maximum horizontal width of the body zone. An emitter layer between the drift zone and the second surface parallel to the first surface includes at least one first zone of a conductivity type of the drift zone.

    Abstract translation: 半导体器件包括在半导体台面中的主体区域,其形成在从第一表面延伸到半导体本体的相邻控制结构之间。 漂移区与身体区形成第一个pn结。 在半导体台面中,漂移区包括包括半导体台面的收缩部分的第一漂移区段。 平行于第一表面的收缩部分的最小水平宽度小于身体区域的最大水平宽度。 漂移区和平行于第一表面的第二表面之间的发射极层包括漂移区的导电类型的至少一个第一区。

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