Method for Fabrication of a Semiconductor Element and Structure Thereof
    51.
    发明申请
    Method for Fabrication of a Semiconductor Element and Structure Thereof 有权
    半导体元件的制造方法及其结构

    公开(公告)号:US20100289524A1

    公开(公告)日:2010-11-18

    申请号:US12782448

    申请日:2010-05-18

    IPC分类号: H03K19/173 H01L23/525

    摘要: Re-programmable antifuses and structures utilizing re-programmable antifuses are presented herein. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Additionally, the re-programmable antifuses may be configured to a permanently conductive state by applying an even higher voltage across it.

    摘要翻译: 本文介绍了使用可重新编程反熔丝的可重新编程反熔丝和结构。 这种结构包括具有至少一个可再编程反熔丝的可配置互连电路,其中所述至少一个可再编程反熔丝被配置为通过在其上施加第一电压而被编程为进行导通,并被配置为被重新编程为不进行 通过在其上施加第二电压,其中第二电压高于第一电压。 此外,重编程反熔丝可以通过在其上施加更高的电压而被配置为永久导通状态。

    Carbon Nanotube-Silicon Composite Structures and Methods for Making Same
    53.
    发明申请
    Carbon Nanotube-Silicon Composite Structures and Methods for Making Same 有权
    碳纳米管 - 硅复合结构及其制备方法

    公开(公告)号:US20090042136A1

    公开(公告)日:2009-02-12

    申请号:US11579614

    申请日:2005-05-06

    IPC分类号: G03F7/20 H01L21/44

    摘要: The present invention is directed toward methods of attaching or grafting carbon nanotubes (CNTs) to silicon or other surfaces, wherein such attaching or grafting occurs via functional groups on either or both of the CNTs and silicon surface. The present invention is also directed to the novel compositions produced by such methods. Previous work by Applicants has demonstrated covalent attachment of arenes via aryldiazonium salts to Si (hydride passivated single crystal or poly Si; or , p-doped, n-doped or intrinsic), GaAs, and Pd surfaces. In the case of Si, this provides a direct arene-Si bond with no intervening oxide. Applicants have also reported on the use of aryldiazonium salts for the direct covalent linkage of arenes to single wall carbon nanotubes (SWNTs) where the nanotubes can exist either as bundles or individual structures (when surfactant-wrapped). In some embodiments, the present invention is directed to a merger of these two technologies to afford the covalent attachment of individualized (unroped) SWNTs to Si surfaces.

    摘要翻译: 本发明涉及将碳纳米管(CNT)附着或接枝到硅或其它表面上的方法,其中通过碳纳米管和硅表面之一或两者上的官能团进行这种附着或接枝。 本发明还涉及通过这些方法制备的新型组合物。 申请人的以前的工作已经证明了芳烃通过芳基重氮盐与Si(氢化物钝化单晶或多晶硅; <111>或<100>,p掺杂,n掺杂或本征),GaAs和Pd表面共价连接。 在Si的情况下,这提供了没有中间氧化物的直接芳烃-Si键。 申请人还报导了芳基重氮盐用于将芳烃直接共价连接到单壁碳纳米管(SWNT)上,其中纳米管可以以束或单独的结构(当表面活性剂包裹时)存在。 在一些实施方案中,本发明涉及这两种技术的合并,以提供个体化(未经处理的)SWNT共价连接到Si表面。

    Synthesis and use of non-halogenated aromatic compounds as flame retardants for polymer-containing materials
    54.
    发明授权
    Synthesis and use of non-halogenated aromatic compounds as flame retardants for polymer-containing materials 失效
    非卤代芳族化合物作为含聚合物材料的阻燃剂的合成和应用

    公开(公告)号:US06566429B2

    公开(公告)日:2003-05-20

    申请号:US09184174

    申请日:1998-11-02

    IPC分类号: C08K555

    CPC分类号: C08K5/55

    摘要: The present invention utilizes non-halogenated aromatic compounds as flame retardants for polymer containing materials. Specifically, the compounds may be various non-halogenated aromatics such as the aromatic boronic acids. Suitable aromatic compounds include 1,4-benzenediboronic acid, and phenylboronic acid, although other non-halogenated compounds may be utilized. Various polymer-containing materials may utilized the flame retardants of the present invention. Examples include the polyethylenes, polypropylenes, polycarbonates, acrylonitrile-butadiene-styrenes, and high impact polystyrenes.

    摘要翻译: 本发明使用非卤化芳族化合物作为含聚合物材料的阻燃剂。 具体地,化合物可以是各种非卤化芳族化合物,例如芳族硼酸。 合适的芳族化合物包括1,4-苯二
    硼酸和苯基硼酸,尽管可以使用其它非卤代化合物。 各种含聚合物的材料可以使用本发明的阻燃剂。 实例包括聚乙烯,聚丙烯,聚碳酸酯,丙烯腈 - 丁二烯 - 苯乙烯和高抗冲聚苯乙烯。

    Purification of fullerenes
    56.
    发明授权
    Purification of fullerenes 失效
    富勒烯的纯化

    公开(公告)号:US5310532A

    公开(公告)日:1994-05-10

    申请号:US896193

    申请日:1992-06-10

    IPC分类号: C01B31/02 C01B31/00

    摘要: A low-cost and facile method of purifying fullerenes to obtain a preparation enriched in a fullerene of selected molecular weight using activated carbon involves adding a fullerene mixture to the top end of a column comprising activated carbon, passing a solvent in which the selected molecular weight fullerene is soluble through the column, and recovering a fraction enriched in the selected molecular weight fullerene from the bottom end of the column. In addition to activated carbon, the column may further comprise silica gel, diatomaceous earth, or other materials which aid in column packing and eluent flow.

    摘要翻译: 使用活性炭纯化富勒烯以获得富含选定分子量的富勒烯的制剂的低成本和容易的方法包括将富勒烯混合物加入到包含活性炭的柱的顶端,通过其中所选择的分子量 富勒烯可通过塔溶解,并从塔的底端回收富集所选择的分子量富勒烯的馏分。 除了活性炭之外,该柱还可以包括硅胶,硅藻土或其它有助于柱填充和洗脱液流动的材料。

    Production of graphene nanoplatelets by oxidative anhydrous acidic media

    公开(公告)号:US09840418B2

    公开(公告)日:2017-12-12

    申请号:US14739455

    申请日:2015-06-15

    IPC分类号: C01B31/00 C01B31/04

    摘要: Methods of producing graphene nanoplatelets by exposing graphite to a medium to form a dispersion of graphite in the medium. In some embodiments, the exposing results in formation of graphene nanoplatelets from the graphite. In some embodiments, the medium includes the following components: (a) an acid; (b) a dehydrating agent; and (c) an oxidizing agent. In some embodiments, the methods of the present disclosure result in the formation of graphene nanoplatelets at a yield of more than 90%. In some embodiments, the methods of the present disclosure result in the formation of graphene nanoplatelets in bulk quantities that are more than about a 1 kg of graphene nanoplatelets. Additional embodiments of the present disclosure pertains to the formed graphene nanoplatelets. In some embodiments, the graphene nanoplatelets include a plurality of layers, such as from about 1 layer to about 100 layers.