公开(公告)号：US06392853B1

公开(公告)日：2002-05-21

申请号：US09489973

申请日：2000-01-24

申请人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Youfeng Zheng ,  Ru-Ying Tong ,  Kochan Ju

发明人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Youfeng Zheng ,  Ru-Ying Tong ,  Kochan Ju

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/26

摘要： The giant magnetoresistance (GMR) effect includes a contribution that is due to anisotropic magnetoresistance (AMR). Unfortunately the AMR effect tends to degrade the peak-to-peak signal asymmetry. Additionally, a high AMR/GMR ratio causes a larger signal asymmetry variation. It is therefor desirable to reduce both the AMR contribution as well as the AMR/GMR ratio. This has been achieved by modifying the free layer through the insertion of an extra layer of a highly resistive or insulating material at approximately mid thickness level. This layer is from 3 to 15 Angstroms thick and serves to reduce the Anisotropic Magneto-resistance contribution to the total magneto-resistance of the device. This reduces the GMR contribution only slightly but cuts the AMR/GMR ratio in half, thereby improving cross-track asymmetry and signal linearity.

摘要翻译： 巨磁电阻（GMR）效应包括归因于各向异性磁阻（AMR）。 不幸的是，AMR效应趋于降低峰 - 峰信号不对称性。 另外，高AMR / GMR比率导致更大的信号不对称变化。 因此，减少AMR贡献以及AMR / GMR比值是有希望的。 这已经通过在大约中等厚度水平上插入高电阻或绝缘材料的额外层来修饰自由层来实现。 该层厚度为3至15埃，用于降低各向异性磁阻对器件的总磁阻的贡献。 这仅略微降低了GMR贡献，但将AMR / GMR比率降低了一半，从而提高了交叉磁道不对称性和信号线性度。

公开(公告)号：US07400475B2

公开(公告)日：2008-07-15

申请号：US11036529

申请日：2005-01-14

申请人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Fong Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

发明人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Fong Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

公开(公告)号：US07134186B2

公开(公告)日：2006-11-14

申请号：US11036922

申请日：2005-01-14

申请人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Fong Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

发明人： Cheng T. Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Fong Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Chyi Han

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

公开(公告)号：US07130168B2

公开(公告)日：2006-10-31

申请号：US11229155

申请日：2005-09-16

申请人： Min Li ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Simon Liao ,  Kochan Ju

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10

摘要： Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making AP2 from an inverse GMR material and by changing the free layer from a single uniform layer to a ferromagnetic layer AFM (antiferromagnetically) coupled to a layer of inverse GMR material. Examples of alloys that may be used for the inverse GMR materials include FeCr, NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling can be replaced by a layer of chromium. A process to manufacture the structure is also described.

摘要翻译： 为了满足更高的信号要求，除了改善GMR比率本身外，希望降低GMR器件中的自由层厚度。 然而，自由层的减薄降低了GMR比并导致差的热稳定性。 通过从反GMR材料制备AP 2并通过将自由层从单个均匀层改变为耦合到反向GMR材料层的铁磁层AFM（反铁磁性）而已经克服了该问题。 可用于逆GMR材料的合金的实例包括FeCr，NiFeCr，NiCr，CoCr，CoFeCr和CoFeV。 此外，通常用于实现反铁磁耦合的钌层可以被铬层代替。 还描述了制造该结构的方法。

公开(公告)号：US20060061919A1

公开(公告)日：2006-03-23

申请号：US11268076

申请日：2005-11-07

申请人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3268 ,  H01F41/305 ,  Y10T29/49044

摘要： It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.

公开(公告)号：US06999286B2

公开(公告)日：2006-02-14

申请号：US11091099

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng T. Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng T. Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US06998150B2

公开(公告)日：2006-02-14

申请号：US10388289

申请日：2003-03-12

申请人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Kunliang Zhang ,  Masashi Sano ,  Koichi Terunuma ,  Simon Liao ,  Kochan Ju

IPC分类号： C23C8/10

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3268 ,  H01F41/305 ,  Y10T29/49044

摘要： It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.

摘要翻译： 已经发现，在CoFe或CoFe / NiFe复合材料中插入铜层压体导致CPP GMR和DRA的值更高。 然而，这种类型的结构在高-10 -6至-10 -5范围内表现出非常负的磁致伸缩。 通过给铜层压板进行氧曝光解决了这个问题。当这样做时，发现自由层具有非常低的正磁致伸缩常数。 此外，磁致伸缩常数的值可以通过改变自由层的厚度和/或氧处理的铜层压板的位置和数量来调节。

公开(公告)号：US06985337B2

公开(公告)日：2006-01-10

申请号：US11091281

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US06972934B2

公开(公告)日：2005-12-06

申请号：US10883930

申请日：2004-07-02

申请人： Cheng T. Horng ,  Kochan Ju ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong ,  Simon Liao

发明人： Cheng T. Horng ,  Kochan Ju ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49039 ,  Y10T29/49044 ,  Y10T29/49055

摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.

摘要翻译： 用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。 包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。 这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。 由此生产的传感器结构适用于高密度应用。

公开(公告)号：US20050219773A1

公开(公告)日：2005-10-06

申请号：US10812695

申请日：2004-03-30

申请人： Min Li ,  Youfeng Zheng ,  Kunliang Zhang ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Youfeng Zheng ,  Kunliang Zhang ,  Simon Liao ,  Kochan Ju

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  H01F10/3272 ,  H01F41/308 ,  Y10T29/49034 ,  Y10T428/1143

摘要： A method for fabricating a stitched CPP synthetic spin-valve sensor with in-stack stabilization of its free layer. The method can also be applied to the formation of a stitched tunneling magnetoresistive sensor. The free layer is strongly stabilized by magnetostatic coupling through the use of a longitudinal biasing formation that includes a ferromagnetic layer, denoted LBL, within the pillar portion of the sensor and a synthetic exchange coupled tri-layer within the stitched portion of the sensor. The tri-layer consists of two ferromagnetic layers, FM1 and FM2 separated by a coupling layer and magnetized longitudinally in antiparallel directions. A criterion for the magnetic thicknesses of the layers: [t(LBL)+t(FM1)]/t(FM2)=70/90 angstroms of CoFe insures a strong exchange coupling. The magnetization of the tri-layer is done in a low field anneal that does not disturb the previous magnetization of the ferromagnetic free layer.

摘要翻译： 一种用于制造其自由层的堆叠稳定化的缝合CPP合成自旋阀传感器的方法。 该方法还可以应用于缝合隧道磁阻传感器的形成。 通过使用包括在传感器的柱部分中表示为LBL的铁磁性层的纵向偏压结构和在传感器的缝合部分内的合成交换耦合三层的静电耦合，自由层被强烈地稳定。 三层由两个铁磁层组成，FM 1和FM 2由耦合层分开，并沿反向平行方向纵向磁化。 层的磁性厚度的标准：CoFe的[t（LBL）+ t（FM 1）] / t（FM 2）= 70/90埃确保了强的交换耦合。 三层的磁化是在不影响铁磁自由层的先前磁化的低场退火中进行的。