CENTRIFUGAL SEPARATOR
    52.
    发明申请
    CENTRIFUGAL SEPARATOR 审中-公开
    离心分离器

    公开(公告)号:US20130210601A1

    公开(公告)日:2013-08-15

    申请号:US13819203

    申请日:2011-08-15

    IPC分类号: B04B11/02

    摘要: A centrifugal separator includes a rotor which is rotatable around an axis of rotation. The rotor includes a separation chamber with an inlet for a liquid mixture containing solid particles, at least one liquid outlet for a separated liquid from the liquid mixture, and a solids outlet for the separated solid particles. A screw conveyor is arranged to rotate inside the rotor around the axis of rotation, at a different speed than the rotor. The screw conveyor has at least one conveyor flight for transporting the separated solid particles in the separation chamber towards and out of the solids outlet. The conveyor flight is provided with wear resistant elements arranged along its edge and the wear resistant elements are spaced apart with an interspace between mutually adjacent wear resistant elements.

    摘要翻译: 离心分离器包括可围绕旋转轴线旋转的转子。 转子包括具有用于含有固体颗粒的液体混合物的入口的分离室,用于与液体混合物分离的液体的至少一个液体出口和用于分离的固体颗粒的固体出口。 螺旋输送机布置成以与转子不同的速度绕转子轴线旋转。 螺旋输送机具有至少一个输送机飞行,用于将分离室中的分离的固体颗粒朝向和离开固体出口输送。 输送机飞行沿其边缘设置有耐磨元件,耐磨元件间隔开相互相邻的耐磨元件之间的间隙。

    Method for manufacturing a diamond composite
    53.
    发明授权
    Method for manufacturing a diamond composite 有权
    菱形复合材料的制造方法

    公开(公告)号:US07959887B2

    公开(公告)日:2011-06-14

    申请号:US11882893

    申请日:2007-08-06

    IPC分类号: C01B31/36

    摘要: A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt % additives; b) forming a work piece from the mixture using a pressure of at least 100 Mpa; c) heating the formed work piece to at least 300° C. for removing possible water and wholly or partially removing additives; d) heating the work piece and controlling the heating temperature and heating time so that a certain desired amount of graphite is created by graphitization of diamonds, wherein the amount of graphite created by graphitization is 3-50 wt % of the amount of diamond; e) infiltrating silicon or silicon alloy into the work piece.

    摘要翻译: 制造金刚石复合材料的方法包括:a)将金刚石与添加剂混合,所述混合物包括至少50重量%且小于95重量%的金刚石和大于5重量%的添加剂; b)使用至少100Mpa的压力从混合物形成工件; c)将形成的工件加热至至少300℃,以除去可能的水并全部或部分除去添加剂; d)加热工件并控制加热温度和加热时间,使得通过石墨化石墨化产生一定的所需量的石墨,其中由石墨化产生的石墨的量为金刚石量的3-50wt%; e)将硅或硅合金浸入工件中。

    GRANULAR NANOPARTICLES HAVING BRIGHT FLUORESCENCE AND GIANT RAMAN ENHANCEMENTS
    54.
    发明申请
    GRANULAR NANOPARTICLES HAVING BRIGHT FLUORESCENCE AND GIANT RAMAN ENHANCEMENTS 有权
    具有明亮的荧光和巨大的拉曼增强的颗粒纳米颗粒

    公开(公告)号:US20110111518A1

    公开(公告)日:2011-05-12

    申请号:US12743184

    申请日:2008-11-14

    IPC分类号: G01N21/76

    摘要: The present invention provides nanoparticles having bright fluorescence, where the total number of photons emitted from a single nanoparticle upon excitation with an excitation wavelength of the nanoparticle is at least 107, and giant Raman enhancements, where Raman signal for a molecule near a single nanoparticle increases at least 107 times. The nanoparticles of the invention comprise a plurality of crystallites that are each about 0.6 nm to about 10 nm in size. The present invention also provides methods for making the nanoparticles, which include mixing a matrix material with a reactant capable of being thermally reduced to form the nanoparticle; forming a mixed solid phase; and thermally reducing the mixed solid phase to form the nanoparticle.

    摘要翻译: 本发明提供了具有明亮荧光的纳米颗粒,其中在用纳米颗粒的激发波长激发时从单个纳米颗粒发射的光子的总数至少为107,并且巨大的拉曼增强,其中单个纳米颗粒附近的分子的拉曼信号增加 至少107次。 本发明的纳米颗粒包括大小约0.6nm至约10nm的多个微晶。 本发明还提供了制备纳米颗粒的方法,其包括将基质材料与能够热还原形成纳米颗粒的反应物混合; 形成混合固相; 并且热还原混合的固相以形成纳米颗粒。

    Nano-Sized Optical Fluorescence Labels and Uses Thereof
    55.
    发明申请
    Nano-Sized Optical Fluorescence Labels and Uses Thereof 有权
    纳米尺寸荧光标记及其用途

    公开(公告)号:US20100029016A1

    公开(公告)日:2010-02-04

    申请号:US12571865

    申请日:2009-10-01

    IPC分类号: G01N33/544

    摘要: A composition is disclosed which is capable of being used for detection, comprising an encapsulated noble metal nanocluster. Methods for preparing the encapsulated noble metal nanoclusters, and methods of using the encapsulated noble metal nanoclusters are also disclosed. The noble metal nanoclusters are preferably encapsulated by a dendrimer or a peptide. The encapsulated noble metal nanoclusters have a characteristic spectral emission, wherein said spectral emission is varied by controlling the nature of the encapsulating material, such as by controlling the size of the nanocluster and/or the generation of the dendrimer, and wherein said emission is used to provide information about a biological state.

    摘要翻译: 公开了能够用于检测的组合物,其包含包封的贵金属纳米簇。 还公开了制备包封的贵金属纳米簇的方法,以及使用包封的贵金属纳米团簇的方法。 贵金属纳米团簇优选被树枝状聚合物或肽包封。 封装的贵金属纳米团簇具有特征光谱发射,其中所述光谱发射通过控制封装材料的性质而变化,例如通过控制纳米簇的尺寸和/或树枝状聚合物的产生,并且其中使用所述发射 提供有关生物状态的信息。

    FORMING CLOSELY SPACED ELECTRODES
    56.
    发明申请
    FORMING CLOSELY SPACED ELECTRODES 有权
    形成密闭电极

    公开(公告)号:US20070069243A1

    公开(公告)日:2007-03-29

    申请号:US11424655

    申请日:2006-06-16

    IPC分类号: H01L29/76 B32B1/00

    摘要: The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.

    摘要翻译: 本发明提供一种制造该装置的装置和方法。 该装置包括具有平坦表面的基底和位于平坦表面上的第一和第二电极。 第一电极具有顶表面和侧表面,并且侧表面具有与基底接近或接触的边缘。 电极绝缘层位于顶表面上,并且位于侧表面上的自组装层。 第二电极与自组装层和电极绝缘层接触。

    Reset-out circuit with feed back capability
    59.
    发明授权
    Reset-out circuit with feed back capability 失效
    具有反馈功能的复位电路

    公开(公告)号:US06188256B1

    公开(公告)日:2001-02-13

    申请号:US09206435

    申请日:1998-12-07

    IPC分类号: H03L700

    CPC分类号: G06F1/24

    摘要: A reset device is disclosed which is part of a micro-controller formed on an integrated circuit. The reset device has a counter which outputs a count enable signal after counting a predetermined number of counts. In response to an input reset signal, an input device of the reset device provides a start signal to the counter for initiating count-down thereof. An output device outputs an output reset signal in response to the start signal and the count enable signal. The start signal is inhibited by a control signal, which is provided from a control device in response to an external reset signal received at an input pin of the micro-controller. The input device includes an AND gate which receives the input reset signal, an inverted delayed version of the input reset signal, and the disable signal. The reset device further includes an OR gate which receives the start signal and the count enable signal to provide an input signal to the output device for generation of the output reset signal. Another OR gate receives the outputs the counter and provides the count enable signal.

    摘要翻译: 公开了一种复位装置,其是形成在集成电路上的微控制器的一部分。 复位装置具有在计数预定数量的计数之后输出计数使能信号的计数器。 响应于输入复位信号,复位装置的输入装置向计数器提供启动信号以启动其向下计数。 输出装置响应于起始信号和计数使能信号输出输出复位信号。 响应于在微控制器的输入引脚处接收到的外部复位信号,由控制装置提供的控制信号禁止启动信号。 输入装置包括接收输入复位信号的与门,输入复位信号的反相延迟版本和禁止信号。 复位装置还包括OR门,其接收起始信号和计数使能信号,以向输出装置提供输出信号以产生输出复位信号。 另一个OR门接收计数器的输出并提供计数使能信号。

    Sidewall profile
    60.
    发明授权
    Sidewall profile 失效
    侧壁轮廓

    公开(公告)号:US5939765A

    公开(公告)日:1999-08-17

    申请号:US977645

    申请日:1997-11-24

    IPC分类号: H01L21/762 H01L29/00

    CPC分类号: H01L21/76232 Y10S438/978

    摘要: A shallow trench isolation structure and method for forming such structure. In one embodiment, the semiconductor device isolating structure of the present invention includes a trench formed into a semiconductor substrate. A cross-section of the trench has a first sidewall sloping inwardly towards the center of a substantially planar bottom surface, and a second sidewall sloping inwardly towards the center of the substantially planar bottom surface. Additionally, a cross section of the trench has a first rounded bottom trench corner at an interface of the first sidewall and the substantially planar bottom surface, and a second rounded bottom trench corner at an interface of the second sidewall and the substantially planar bottom surface. Furthermore, the trench of the present invention has a first rounded upper trench corner at the interface of the first sidewall and the top surface of the semiconductor substrate, and a second rounded upper trench corner at the interface of the second sidewall and the top surface of the semiconductor substrate. Thus, the trench of the present invention does not have micro-trenches formed into the bottom surface thereof. Additionally, the present invention does not have the sharp upper and bottom corners found in conventional trenches formed using a shallow trench isolation method. The present invention also provides a method to eliminate deleterious micromasking and spike formation.

    摘要翻译: 浅沟槽隔离结构及其形成方法。 在一个实施例中,本发明的半导体器件隔离结构包括形成半导体衬底的沟槽。 沟槽的横截面具有朝向基本上平坦的底表面的中心向内倾斜的第一侧壁和朝向基本平坦的底表面的中心向内倾斜的第二侧壁。 此外,沟槽的横截面具有在第一侧壁和基本上平坦的底表面的界面处的第一圆形底部沟槽角以及在第二侧壁和基本上平坦的底表面的界面处的第二圆形底部沟槽拐角。 此外,本发明的沟槽在第一侧壁和半导体衬底的顶表面的界面处具有第一圆形上沟槽角,以及在第二侧壁和第二侧壁的顶表面的界面处的第二圆形上沟槽角 半导体衬底。 因此,本发明的沟槽不具有形成在其底表面中的微沟槽。 此外,本发明不具有使用浅沟槽隔离方法形成的常规沟槽中发现的尖锐的上部和下部角落。 本发明还提供消除有害的微掩模和尖峰形成的方法。