Variable resistance memory with lattice array using enclosing transistors

    公开(公告)号:US08385112B2

    公开(公告)日:2013-02-26

    申请号:US12888201

    申请日:2010-09-22

    申请人: Jun Liu

    发明人: Jun Liu

    IPC分类号: G11C5/02 G11C5/06

    摘要: A variable resistance memory array, programming a variable resistance memory element and methods of forming the array. A variable resistance memory array is formed with a plurality of word line transistors surrounding each phase change memory element. To program a selected variable resistance memory element, all of the bitlines are grounded or biased at the same voltage. A top electrode select line that is in contact with the selected variable resistance memory element is selected. The word line having the word line transistors surrounding the selected variable resistance memory element are turned on to supply programming current to the element. Current flows from the selected top electrode select line through the variable resistance memory element into the common source/drain region of the surrounding word line transistors, across the transistors to the nearest bitline contacts. The word lines are patterned in various lattice configurations.

    System and method for smoothing mode transitions in a voltage supply
    52.
    发明授权
    System and method for smoothing mode transitions in a voltage supply 失效
    用于平滑电源中的模式转换的系统和方法

    公开(公告)号:US08373400B2

    公开(公告)日:2013-02-12

    申请号:US12876299

    申请日:2010-09-07

    IPC分类号: G05F1/56 G05F1/569 G05F1/575

    摘要: A system, voltage supply circuit, control unit for a voltage supply circuit, and method of controlling a voltage supply circuit are disclosed. For example, a system is disclosed that comprises at least one electronic circuit and a voltage supply unit coupled to an input of the at least one electronic circuit. The voltage supply unit includes a power unit to supply a voltage to the at least one electronic circuit and a control unit to control an operating mode of the power unit, an output of the control unit coupled to an input of the power unit. The control unit includes a mode selector to select the operating mode of the power unit, coupled to at least a first output of the power unit, an amplifier coupled to the at least a first output of the power unit, a compensation circuit, and a first switching unit coupled to the mode selector and the compensation circuit, to couple the compensation circuit to the amplifier if a selected operating mode of the power unit is a first mode.

    摘要翻译: 公开了一种系统,电压供应电路,用于电压供应电路的控制单元和控制电压供应电路的方法。 例如,公开了一种包括至少一个电子电路和耦合到至少一个电子电路的输入的电压供应单元的系统。 电压提供单元包括向至少一个电子电路提供电压的电源单元和用于控制功率单元的操作模式的控制单元,耦合到功率单元的输入的控制单元的输出。 控制单元包括模式选择器,用于选择耦合到功率单元的至少第一输出的功率单元的工作模式,耦合到功率单元的至少第一输出的放大器,补偿电路和 耦合到模式选择器和补偿电路的第一开关单元,如果功率单元的所选择的操作模式是第一模式,则将补偿电路耦合到放大器。

    Drilling Composition, Process for its Preparation, and Applications Thereof
    56.
    发明申请
    Drilling Composition, Process for its Preparation, and Applications Thereof 审中-公开
    钻井组合物,其制备方法及其应用

    公开(公告)号:US20120325492A1

    公开(公告)日:2012-12-27

    申请号:US13602928

    申请日:2012-09-04

    摘要: A drilling composition is provided. The composition includes: I) an organic phase comprising components: i. from about 20 wt. % to about 99.999 wt. %, based on the total weight of components i. and ii., of at least one linear or branched, cyclic or non-cyclic, saturated hydrocarbon; ii. from about 0.001 wt. % to about 25 wt. %, based on the total weight of components i. and ii., of at least one ester; II) from 0 to about 50 wt. %, based on the total weight of the composition, of water or aqueous phase; III) from 0 to about 60 wt. %, based on the total weight of the composition, of at least one additive, wherein the sum of the weight components I) to III) is 100 wt. %.

    摘要翻译: 提供钻井组合物。 组合物包括:I)包含组分的有机相:i。 约20wt。 %至约99.999重量% %,基于组件i的总重量。 和ii。至少一种直链或支链,环状或非环状饱和烃; ii。 约0.001重量% %至约25wt。 %,基于组件i的总重量。 和ii。至少一种酯; II)为0至约50wt。 %,基于组合物的总重量,水或水相; III)为0至约60wt。 %,基于组合物的总重量,至少一种添加剂,其中重量组分I)至III)之和为100重量%。 %。

    Summation Circuit in DC-DC Converter
    58.
    发明申请
    Summation Circuit in DC-DC Converter 有权
    DC-DC转换器求和电路

    公开(公告)号:US20120313615A1

    公开(公告)日:2012-12-13

    申请号:US13590819

    申请日:2012-08-21

    申请人: Jun Liu Haibo Zhang

    发明人: Jun Liu Haibo Zhang

    IPC分类号: G05F3/02

    CPC分类号: H02M3/156

    摘要: An integrated circuit includes a saw-tooth generator including a saw tooth node configured to have a saw-tooth voltage generated thereon; and a first switch having a first end connected to the saw tooth node. The integrated circuit further includes a second switch coupled between an output node and an electrical ground, wherein the first switch and the second switch are configured to operate synchronously. A first current source is connected to the saw tooth node. A second current source is connected to the output node.

    摘要翻译: 集成电路包括锯齿发生器,其包括被配置为具有在其上产生的锯齿电压的锯齿节点; 以及第一开关,其具有连接到锯齿节点的第一端。 集成电路还包括耦合在输出节点和电接地之间的第二开关,其中第一开关和第二开关被配置为同步地操作。 第一电流源连接到锯齿节点。 第二个电流源连接到输出节点。

    CONFINED CELL STRUCTURES AND METHODS OF FORMING CONFINED CELL STRUCTURES
    59.
    发明申请
    CONFINED CELL STRUCTURES AND METHODS OF FORMING CONFINED CELL STRUCTURES 有权
    确定的细胞结构和形成限制性细胞结构的方法

    公开(公告)号:US20120248557A1

    公开(公告)日:2012-10-04

    申请号:US13079652

    申请日:2011-04-04

    申请人: Jun Liu Gurtej Sandhu

    发明人: Jun Liu Gurtej Sandhu

    IPC分类号: H01L29/82 H01L21/8246

    摘要: Techniques for reducing damage in memory cells are provided. Memory cell structures are typically formed using dry etch and/or planarization processes which damage certain regions of the memory cell structure. In one or more embodiments, certain regions of the cell structure may be sensitive to damage. For example, the free magnetic region in magnetic memory cell structures may be susceptible to demagnetization. Such regions may be substantially confined by barrier materials during the formation of the memory cell structure, such that the edges of such regions are protected from damaging processes. Furthermore, in some embodiments, a memory cell structure is formed and confined within a recess in dielectric material.

    摘要翻译: 提供了减少存储单元损坏的技术。 通常使用破坏存储单元结构的某些区域的干蚀刻和/或平坦化处理来形成存储单元结构。 在一个或多个实施例中,细胞结构的某些区域可能对损伤敏感。 例如,磁存储单元结构中的自由磁区可能易于退磁。 这样的区域在形成存储单元结构期间可以基本上被阻挡材料限制,使得这些区域的边缘被保护免受损坏的过程。 此外,在一些实施例中,存储单元结构形成并限制在电介质材料的凹部内。

    Nucleic acid interaction analysis
    60.
    发明授权
    Nucleic acid interaction analysis 有权
    核酸相互作用分析

    公开(公告)号:US08263367B2

    公开(公告)日:2012-09-11

    申请号:US12020071

    申请日:2008-01-25

    IPC分类号: C07H22/00 C12P19/34

    摘要: The present invention provides at least one isolated linear composite nucleic acid molecule comprising at least one first tag from at least one first nucleic acid molecule and at least one second tag from at least one second nucleic acid molecule, wherein the first and second nucleic acids interact in a nucleic acid mixture; and wherein the first and second tags are from different nucleic acid molecules. The invention also provides a method of producing at least one isolated linear composite nucleic acid and to a method of detecting and/or identifying nucleic acid interactions.

    摘要翻译: 本发明提供至少一种分离的线性复合核酸分子,其包含来自至少一个第一核酸分子的至少一个第一标签和至少一个第二核酸分子的至少一个第二标签,其中所述第一和第二核酸相互作用 在核酸混合物中; 并且其中所述第一和第二标签来自不同的核酸分子。 本发明还提供了生产至少一种分离的线性复合核酸的方法以及检测和/或鉴定核酸相互作用的方法。