Power distribution circuit
    51.
    发明授权
    Power distribution circuit 有权
    配电电路

    公开(公告)号:US09543760B2

    公开(公告)日:2017-01-10

    申请号:US14125438

    申请日:2012-07-17

    摘要: A transformer (2A) outputs differential signals of a positive phase signal (Vout2Ap) having phase θ1+90° and a negative phase signal (Vout2An) having phase θ1−90°. A transformer (2B) outputs differential signals of a positive phase signal (Vout2Bp) having phase θ2+90° and a negative phase signal (Vout2Bn) having phase θ2−90°. An adding circuit (3) composes a pair of differential output signals, as signals corrected in phase error (θ1−θ2) generated in the transformers (2A, 2B), in a manner of summing up vectors of two pairs of the differential signals outputted from the transformers (2A, 2B) for the positive phase signal and the negative phase signal, respectively.

    摘要翻译: 变压器(2A)输出具有相位θ1+ 90°的正相信号(Vout2Ap)和具有相位θ1-90°的负相位信号(Vout2An)的差分信号。 变压器(2B)输出具有相位θ2+ 90°的正相信号(Vout2Bp)和具有相位θ2-90°的负相位信号(Vout2Bn)的差分信号。 加法电路(3)构成一对差分输出信号,作为在变压器(2A,2B)中产生的以相位误差(θ1-θ2)校正的信号,以对输出的两对差分信号的矢量相加的方式 分别用于正相信号和负相位信号的变压器(2A,2B)。

    Shift sensor and vehicle including the same
    52.
    发明授权
    Shift sensor and vehicle including the same 有权
    换档传感器和车辆包括相同

    公开(公告)号:US08970202B2

    公开(公告)日:2015-03-03

    申请号:US14119021

    申请日:2011-07-05

    摘要: A shift sensor includes a movable member, four movable contacts, seven fixed contacts, and two power supply terminals. Each of the movable contacts is fixed to the movable member and pivoted to a position corresponding to a shift position. Each of the fixed contacts outputs a shift signal when it is brought into conduction with a power supply terminal by coming into contact with any of the movable contacts. The fixed contacts are arranged such that the number of shift signals that differ between shift positions is three or more, between the shift positions of P, R, N, D, and B, except for between the D and B positions.

    摘要翻译: 换档传感器包括可移动部件,四个可移动触点,七个固定触点和两个电源端子。 每个可动触头固定在可移动部件上并且枢转到与换档位置对应的位置。 每个固定触点在通过与任何可动触点接触而与电源端子导通时输出移位信号。 固定触点被布置成使得除了D和B位置之外,在P,R,N,D和B的移位位置之间,在移位位置之间不同的移位信号的数量是三个以上。

    OSCILLATION FREQUENCY ADJUSTING APPARATUS, OSCILLATION FREQUENCY ADJUSTING METHOD, AND WIRELESS COMMUNICATION APPARATUS
    53.
    发明申请
    OSCILLATION FREQUENCY ADJUSTING APPARATUS, OSCILLATION FREQUENCY ADJUSTING METHOD, AND WIRELESS COMMUNICATION APPARATUS 有权
    振荡频率调节装置,振荡频率调整方法和无线通信装置

    公开(公告)号:US20130141143A1

    公开(公告)日:2013-06-06

    申请号:US13816288

    申请日:2012-02-09

    申请人: Junji Sato

    发明人: Junji Sato

    IPC分类号: H03L7/00

    摘要: A voltage controlled oscillation circuit oscillates at an oscillation frequency corresponding to a control voltage. Injection locked oscillation circuits oscillate at an oscillation frequency corresponding to an output signal from the voltage controlled oscillation circuit. A mixer circuit performs a frequency conversion based on output signals from the injection locked oscillation circuits. A synchronization determiner determines the synchronous status between the injection locked oscillation circuits in accordance with an output signal from the mixer circuit. The injection locked oscillation circuits synchronize with each other at a frequency that is an integral multiple of the oscillation frequency of the voltage controlled oscillation circuit.

    摘要翻译: 压控振荡电路以对应于控制电压的振荡频率振荡。 注入锁定振荡电路以对应于来自压控振荡电路的输出信号的振荡频率振荡。 混频器电路基于来自注入锁定振荡电路的输出信号进行频率转换。 同步确定器根据来自混频器电路的输出信号确定注入锁定振荡电路之间的同步状态。 注入锁定振荡电路以与压控振荡电路的振荡频率的整数倍的频率彼此同步。

    Decorative part and process for producing the same
    56.
    发明授权
    Decorative part and process for producing the same 有权
    装饰部分和生产过程相同

    公开(公告)号:US08178222B2

    公开(公告)日:2012-05-15

    申请号:US12442664

    申请日:2007-09-25

    IPC分类号: B32B9/00

    摘要: A decorative part and a process for producing the decorative part. A first nitride layer containing at least one metal selected among hafnium, titanium, and zirconium is formed on the surface of a decorative part comprising a soft base made of a material selected among stainless steel, titanium and titanium alloys, brass, etc., and a second nitride layer containing at least one metal which is selected among hafnium, titanium, and zirconium and is different from that in the first nitride layer is formed on the first nitride layer to thereby form a primer layer. A multilayered hardened layer including a gold alloy layer is further formed as a finish layer on the primer layer.

    摘要翻译: 装饰部件及其制造方法。 在包括由不锈钢,钛和钛合金,黄铜等中选择的材料制成的软质基材的装饰部件的表面上形成含有选自铪,钛和锆中的至少一种金属的第一氮化物层,以及 在第一氮化物层上形成含有选自铪,钛和锆中的至少一种金属并且与第一氮化物层不同的第二氮化物层,从而形成底漆层。 在底漆层上还形成包含金合金层的多层硬化层作为涂层。

    SIMULATION METHOD AND SIMULATION PROGRAM
    58.
    发明申请
    SIMULATION METHOD AND SIMULATION PROGRAM 审中-公开
    模拟方法和仿真程序

    公开(公告)号:US20100199239A1

    公开(公告)日:2010-08-05

    申请号:US12753832

    申请日:2010-04-02

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5036

    摘要: There is a need for keeping the amount of data to be saved and a simulation process time almost constant irrespectively of a hierarchical level of a hierarchical circuit to be simulated. This simulation method includes a first process and a second process. The first process saves result data obtained from simulating an interface node between higher-level and lower-level hierarchies in accordance with a result of simulation using hierarchical circuit data hierarchized for multiple hierarchies. The second process uses result data saved by the first process to reproduce internal node data not saved by the first process. Result data for the interface node between hierarchies indirectly determines a value for the internal node. Result data to be saved is data concerning the interface node between hierarchies. The amount of saved data and the time needed for the second process are independent of a hierarchical level or a higher-level or lower-level hierarchy.

    摘要翻译: 需要保持要保存的数据量,并且模拟处理时间几乎恒定,而与待仿真的分级电路的分层级无关。 该模拟方法包括第一处理和第二处理。 第一个过程根据使用多层次层次化的分层电路数据的模拟结果,保存从模拟上级和下层层次之间的接口节点获得的结果数据。 第二个过程使用第一个进程保存的结果数据来再现第一个进程未保存的内部节点数据。 层次之间的接口节点的结果数据间接地确定了内部节点的值。 要保存的结果数据是关于层次结构之间的接口节点的数据。 保存的数据量和第二个进程所需的时间与层次级别或更高级别或较低级别的层次结构无关。

    Radio communication system base station and mobile station
    59.
    发明授权
    Radio communication system base station and mobile station 有权
    无线电通信系统基站和移动台

    公开(公告)号:US07715841B2

    公开(公告)日:2010-05-11

    申请号:US10572978

    申请日:2004-10-01

    IPC分类号: H04Q7/20

    摘要: A radio communication system includes a base station of a radio communication system A, a base station of a radio communication system B operation in non-synchronized way with the base station, and a mobile station capable of communicating with both of the radio communication system A and the radio communication system B. The base station includes a radio unit for transmitting/receiving a radio wave to/from the mobile station and a system information estimation unit for estimating the system information on the radio communication system B and outputting the system estimation information. The radio unit of the base station reports the system estimation information on the base station to the mobile station. The mobile station receives the system estimation information on the base station in advance so as to perform effective switching without using a cabled connection from the radio communication system A to the radio communication system B via a relay device or the like.

    摘要翻译: 无线通信系统包括无线通信系统A的基站,无线通信系统B的与基站非同步的操作的基站,以及能够与无线通信系统A通信的移动台 和无线通信系统B.基站包括用于向移动台发送/接收无线电波的无线电单元和用于估计无线电通信系统B的系统信息的系统信息估计单元,并输出系统估计信息 。 基站的无线单元向移动台报告基站的系统估计信息。 移动站预先在基站上接收系统估计信息,以便不经由中继装置等从无线通信系统A向无线通信系统B的电缆连接进行有效的切换。

    OVERVOLTAGE-PROTECTED LIGHT-EMITTING SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATION
    60.
    发明申请
    OVERVOLTAGE-PROTECTED LIGHT-EMITTING SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATION 有权
    过电压保护的发光半导体器件及其制造方法

    公开(公告)号:US20080308823A1

    公开(公告)日:2008-12-18

    申请号:US12181052

    申请日:2008-07-28

    IPC分类号: H01L33/00 H01L21/18

    摘要: A light-generating semiconductor region is grown by epitaxy on a silicon substrate. The light-generating semiconductor region is a lamination of layers of semiconducting nitrides containing a Group III element or elements. The silicon substrate has a p-type impurity-diffused layer formed therein by thermal diffusion of the Group III element or elements from the light-generating semiconductor region as a secondary product of the epitaxial growth of this region on the substrate. The p-type impurity-diffused layer is utilized as a part of overvoltage protector diodes which are serially interconnected with each other and in parallel with the LED section of the device between a pair of electrodes.

    摘要翻译: 通过硅衬底上的外延生长发光半导体区域。 光产生半导体区域是包含III族元素的半导体氮化物层的叠层。 作为该区域的外延生长的第二产物,硅衬底具有通过来自发光半导体区域的III族元素的热扩散而形成的p型杂质扩散层。 p型杂质扩散层用作过电压保护二极管的一部分,它们彼此串联并且与器件的LED部分在一对电极之间并联。