公开(公告)号：US20120266116A1

公开(公告)日：2012-10-18

申请号：US13534350

申请日：2012-06-27

Applicant: Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Zhenrong Jin ,  Xuefeng Liu

Inventor： Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Zhenrong Jin ,  Xuefeng Liu

IPC: G06F17/50

CPC classification number: H01Q1/2283 ,  H01Q1/40 ,  H01Q9/26 ,  H01Q9/285 ,  H01Q19/108 ,  H01Q19/30

Abstract: A semiconductor chip integrating a transceiver, an antenna, and a receiver is provided. The transceiver is located on a front side of a semiconductor substrate. A through substrate via provides electrical connection between the transceiver and the receiver located on a backside of the semiconductor substrate. The antenna connected to the transceiver is located in a dielectric layer located on the front side of the substrate. The separation between the reflector plate and the antenna is about the quarter wavelength of millimeter waves, which enhances radiation efficiency of the antenna. An array of through substrate dielectric vias may be employed to reduce the effective dielectric constant of the material between the antenna and the reflector plate, thereby reducing the wavelength of the millimeter wave and enhance the radiation efficiency. A design structure for designing, manufacturing, or testing a design for such a semiconductor chip is also provided.

Abstract translation: 提供集成收发器，天线和接收器的半导体芯片。 收发器位于半导体衬底的前侧。 通过基底通孔提供收发器和位于半导体衬底背面的接收器之间的电连接。 连接到收发器的天线位于位于基板正面的电介质层中。 反射板与天线之间的间隔大约是毫米波的四分之一波长，这提高了天线的辐射效率。 可以采用贯穿衬底电介质通孔的阵列来降低天线和反射板之间材料的有效介电常数，由此减小毫米波的波长并提高辐射效率。 还提供了用于设计，制造或测试这种半导体芯片的设计的设计结构。

公开(公告)号：US08279572B2

公开(公告)日：2012-10-02

申请号：US12144095

申请日：2008-06-23

Applicant: Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu ,  Anthony K. Stamper

Inventor： Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu ,  Anthony K. Stamper

IPC: H02H9/02

CPC classification number: H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A design structure for an on-chip high frequency electro-static discharge device is described. In one embodiment, the electro-static discharge structure comprises a first dielectric layer with more than one electrode formed therein. A second dielectric layer with more than one electrode formed therein is located above the first dielectric layer. At least one via connects the more than one electrode in the first dielectric layer with the more than one electrode in the second dielectric layer. A gap is formed through the first dielectric layer and the second dielectric layer, wherein the gap extends between two adjacent electrodes in both the first dielectric layer and the second dielectric layer. A third dielectric layer is disposed over the second dielectric layer, wherein the third dielectric layer hermetically seals the gap to provide electro-static discharge protection on the integrated circuit.

Abstract translation: 描述了片上高频静电放电装置的设计结构。 在一个实施例中，静电放电结构包括其中形成有多于一个电极的第一电介质层。 其中形成有多于一个电极的第二电介质层位于第一介电层的上方。 至少一个通孔将第一介电层中的多于一个的电极与第二介电层中的多于一个的电极连接。 通过第一电介质层和第二电介质层形成间隙，其中间隙在第一电介质层和第二电介质层中的两个相邻电极之间延伸。 第三电介质层设置在第二电介质层上，其中第三介电层气密地密封间隙以在集成电路上提供静电放电保护。

公开(公告)号：US07923808B2

公开(公告)日：2011-04-12

申请号：US11942811

申请日：2007-11-20

Applicant: Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu

Inventor： Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L23/552 ,  H01L21/76 ,  H01L21/76264 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.

Abstract translation: 一种结构包括具有对电噪声敏感的电路或器件的区域的衬底。 此外，该结构包括延伸穿过衬底的整个厚度并围绕该区域的第一隔离结构，以及延伸穿过衬底的整个厚度并围绕该区域的第二隔离结构。

公开(公告)号：US07880158B2

公开(公告)日：2011-02-01

申请号：US12109085

申请日：2008-04-24

Applicant: John M. Aitken ,  Fen Chen ,  Kai D. Feng

Inventor： John M. Aitken ,  Fen Chen ,  Kai D. Feng

IPC: H01L47/00

CPC classification number: G11C11/56 ,  G11C11/5678 ,  G11C11/5692 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/18 ,  H01L27/101 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/145

Abstract: The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application.

Abstract translation: 本发明涉及诸如ROM或EPROM的非易失性存储器，其中存储器的信息密度相对于包括两个逻辑状态器件的常规非易失性存储器而增加。 具体地，本发明的非易失性存储器包括嵌入在热导率为约1W / m-K以下的材料中的SiN / TaN / SiN薄膜电阻器; 以及耦合到电阻器的非线性含Si器件。 读写电路和操作也在本申请中提供。

公开(公告)号：US07675378B2

公开(公告)日：2010-03-09

申请号：US12114029

申请日：2008-05-02

Applicant: Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

Inventor： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

IPC: H03B5/12 ,  H03L7/099

CPC classification number: H03B5/1206 ,  H03B5/1243

Abstract: Disclosed are embodiments of a voltage controlled oscillator (VCO) capable of non-volatile self-correction to compensate for process variations and to ensure that the center frequency of the oscillator is maintained within a predetermined frequency range. This VCO incorporates a pair of varactors connected in parallel to an inductor-capacitor (LC) tank circuit for outputting a periodic signal having a frequency that is proportional to an input voltage. A control loop uses a programmable variable resistance e-fuse to set a compensation voltage to be applied to the pair of varactors. By adjusting the compensation voltage, the capacitance of the pair of varactors can be adjusted in order to selectively increase or decrease the frequency of the periodic signal in response to a set input voltage and, thereby to bring the frequency of that periodic signal into the predetermined frequency range. Also disclosed are embodiments of an associated design structure for such a VCO and an associated method for operating such a VCO.

Abstract translation: 公开了能够进行非易失性自校正以补偿过程变化并确保振荡器的中心频率保持在预定频率范围内的压控振荡器（VCO）的实施例。 该VCO包含一对与电感 - 电容（LC）电路并联连接的变容二极管，用于输出具有与输入电压成比例的频率的周期性信号。 控制回路使用可编程可变电阻电熔丝设置要施加到该变容二极管的补偿电压。 通过调整补偿电压，可以调整一对变容二极管的电容，以便响应于设定的输入电压选择性地增加或减小周期信号的频率，从而使该周期信号的频率达到预定的 频率范围。 还公开了用于这种VCO的相关设计结构的实施例以及用于操作这样的VCO的相关方法。

公开(公告)号：US07666712B2

公开(公告)日：2010-02-23

申请号：US12133442

申请日：2008-06-05

Applicant: Elie Awad ,  Mariette A. Awad ,  Kai D. Feng

Inventor： Elie Awad ,  Mariette A. Awad ,  Kai D. Feng

IPC: H01L21/00

CPC classification number: H01L24/02 ,  H01L23/562 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3025

Abstract: A semiconductor structure comprising a substrate including a first layer comprising a first material having a first modulus of elasticity; a first structure comprising a conductor and formed within the substrate, the first structure having an upper surface; and a stress diverting structure proximate the first structure and within the first layer, the stress diverting structure providing a low mechanical stress region at the upper surface of the first structure when a physical load is applied to the first structure, wherein said low mechanical stress region comprises stress values below the stress values in areas not protected by the stress diverting structure. The stress diverting structure comprises a second material having a second modulus of elasticity less than the first modulus of elasticity, the second material selectively formed over the upper surface of the first structure for diverting mechanical stress created by the physical load applied to the first structure.

Abstract translation: 一种半导体结构，包括：基板，包括第一层，所述第一层包括具有第一弹性模量的第一材料; 包括导体并形成在所述基板内的第一结构，所述第一结构具有上表面; 以及靠近所述第一结构并且在所述第一层内的应力转向结构，所述应力转向结构在向所述第一结构施加物理载荷时在所述第一结构的上表面处提供低机械应力区域，其中所述低机械应力区域 包括低于应力转移结构保护区域的应力值。 应力转向结构包括具有小于第一弹性模量的第二弹性模量的第二材料，第二材料选择性地形成在第一结构的上表面上，用于转移由施加到第一结构的物理负载产生的机械应力。

公开(公告)号：US07609121B2

公开(公告)日：2009-10-27

申请号：US12057494

申请日：2008-03-28

Applicant: Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

Inventor： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

IPC: H03B5/12 ,  H03L7/099

CPC classification number: H03B5/1206 ,  H03B5/1243

Abstract: Disclosed are embodiments of a voltage controlled oscillator (VCO) capable of non-volatile self-correction to compensate for process variations and to ensure that the center frequency of the oscillator is maintained within a predetermined frequency range. This VCO incorporates a pair of varactors connected in parallel to an inductor-capacitor (LC) tank circuit for outputting a periodic signal having a frequency that is proportional to an input voltage. A control loop uses a programmable variable resistance e-fuse to set a compensation voltage to be applied to the pair of varactors. By adjusting the compensation voltage, the capacitance of the pair of varactors can be adjusted in order to selectively increase or decrease the frequency of the periodic signal in response to a set input voltage and, thereby to bring the frequency of that periodic signal into the predetermined frequency range. Also disclosed are embodiments of an associated design structure for such a VCO and an associated method for operating such a VCO.

Abstract translation: 公开了能够进行非易失性自校正以补偿过程变化并确保振荡器的中心频率保持在预定频率范围内的压控振荡器（VCO）的实施例。 该VCO包含一对与电感 - 电容（LC）电路并联连接的变容二极管，用于输出具有与输入电压成比例的频率的周期性信号。 控制回路使用可编程可变电阻电熔丝设置要施加到该变容二极管的补偿电压。 通过调整补偿电压，可以调整一对变容二极管的电容，以便响应于设定的输入电压选择性地增加或减小周期信号的频率，从而使该周期信号的频率达到预定的 频率范围。 还公开了用于这种VCO的相关设计结构的实施例以及用于操作这样的VCO的相关方法。

公开(公告)号：US20090243739A1

公开(公告)日：2009-10-01

申请号：US12114029

申请日：2008-05-02

Applicant: Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

Inventor： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

IPC: H03B5/08 ,  G06F17/50

CPC classification number: H03B5/1206 ,  H03B5/1243

Abstract: Disclosed are embodiments of a voltage controlled oscillator (VCO) capable of non-volatile self-correction to compensate for process variations and to ensure that the center frequency of the oscillator is maintained within a predetermined frequency range. This VCO incorporates a pair of varactors connected in parallel to an inductor-capacitor (LC) tank circuit for outputting a periodic signal having a frequency that is proportional to an input voltage. A control loop uses a programmable variable resistance e-fuse to set a compensation voltage to be applied to the pair of varactors. By adjusting the compensation voltage, the capacitance of the pair of varactors can be adjusted in order to selectively increase or decrease the frequency of the periodic signal in response to a set input voltage and, thereby to bring the frequency of that periodic signal into the predetermined frequency range. Also disclosed are embodiments of an associated design structure for such a VCO and an associated method for operating such a VCO.

公开(公告)号：US20090243738A1

公开(公告)日：2009-10-01

申请号：US12057494

申请日：2008-03-28

Applicant: Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

Inventor： Kai D. Feng ,  Kafai Lai ,  Ping-Chuan Wang ,  Zhijian J. Yang

IPC: H03B5/08

CPC classification number: H03B5/1206 ,  H03B5/1243

Abstract: Disclosed are embodiments of a voltage controlled oscillator (VCO) capable of non-volatile self-correction to compensate for process variations and to ensure that the center frequency of the oscillator is maintained within a predetermined frequency range. This VCO incorporates a pair of varactors connected in parallel to an inductor-capacitor (LC) tank circuit for outputting a periodic signal having a frequency that is proportional to an input voltage. A control loop uses a programmable variable resistance e-fuse to set a compensation voltage to be applied to the pair of varactors. By adjusting the compensation voltage, the capacitance of the pair of varactors can be adjusted in order to selectively increase or decrease the frequency of the periodic signal in response to a set input voltage and, thereby to bring the frequency of that periodic signal into the predetermined frequency range. Also disclosed are embodiments of an associated design structure for such a VCO and an associated method for operating such a VCO.

Abstract translation: 公开了能够进行非易失性自校正以补偿过程变化并确保振荡器的中心频率保持在预定频率范围内的压控振荡器（VCO）的实施例。 该VCO包含一对与电感 - 电容（LC）电路并联连接的变容二极管，用于输出具有与输入电压成比例的频率的周期性信号。 控制回路使用可编程可变电阻电熔丝设置要施加到该变容二极管的补偿电压。 通过调整补偿电压，可以调整一对变容二极管的电容，以便响应于设定的输入电压选择性地增加或减小周期信号的频率，从而使该周期信号的频率达到预定的 频率范围。 还公开了用于这种VCO的相关设计结构的实施例以及用于操作这样的VCO的相关方法。

公开(公告)号：US20090127652A1

公开(公告)日：2009-05-21

申请号：US11942811

申请日：2007-11-20

Applicant: Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu

Inventor： Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu

IPC: H01L23/552 ,  H01L21/76

CPC classification number: H01L23/552 ,  H01L21/76 ,  H01L21/76264 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.

Abstract translation: 一种结构包括具有对电噪声敏感的电路或器件的区域的衬底。 此外，该结构包括延伸穿过衬底的整个厚度并围绕该区域的第一隔离结构，以及延伸穿过衬底的整个厚度并围绕该区域的第二隔离结构。