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公开(公告)号：US08887893B2
公开(公告)日：2014-11-18
申请号：US13339426
申请日：2011-12-29
CPC分类号： B25J9/0093 , B23P21/004 , B25J9/0096 , Y10S901/16
摘要： A work system according to embodiments includes a robot and work stations. The robot performs a predetermined work on a workpiece as a work target. The work stations are places where the predetermined work is performed on the workpiece. The robot performs conveying of the workpiece between the work stations.
摘要翻译： 根据实施例的工作系统包括机器人和工作站。 机器人作为工作目标在工件上执行预定的工作。 工作站是在工件上执行预定工作的地方。 机器人在工作站之间执行工件的传送。
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公开(公告)号：US20120053724A1
公开(公告)日：2012-03-01
申请号：US13221013
申请日：2011-08-30
CPC分类号： B25J9/1697 , B25J9/1682 , G05B2219/39109 , G05B2219/40053 , Y10S901/30
摘要： A robot system includes a manipulator; a work table arranged within a movement extent of the manipulator; an imaging unit for taking a two-dimensional image of the workpieces loaded on the work table; a workpiece supply unit for supplying workpieces onto the work table; and a control system for controlling operations of the manipulator and the imaging unit. The control system includes an imaging control unit for controlling the imaging unit to take the two-dimensional image of the workpieces loaded on the work table, a workpiece detecting unit for detecting a position and a posture of each of the workpieces loaded on the work table by comparing the two-dimensional image taken by the imaging unit with templates stored in advance, and a manipulator control unit for operating the manipulator to perform a work with respect to the workpieces detected by the workpiece detecting unit.
摘要翻译： 机器人系统包括操纵器; 布置在机械手的移动范围内的工作台; 用于拍摄加载在工作台上的工件的二维图像的成像单元; 工件供给单元，用于将工件供给到工作台上; 以及用于控制操纵器和成像单元的操作的控制系统。 该控制系统包括：成像控制单元，用于控制成像单元，以取得装载在工作台上的工件的二维图像;工件检测单元，用于检测装载在工作台上的每个工件的位置和姿势 通过将成像单元拍摄的二维图像与预先存储的模板进行比较，以及操作器控制单元，用于操作操纵器以对由工件检测单元检测到的工件进行工作。
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公开(公告)号：US20070235787A1
公开(公告)日：2007-10-11
申请号：US11407048
申请日：2006-04-20
申请人： Yoshihisa Nagano , Yuji Judai
发明人： Yoshihisa Nagano , Yuji Judai
IPC分类号： H01L27/108
CPC分类号： H01L28/55 , H01L27/11502 , H01L27/11507
摘要： A capacitor device having a three-dimensional structure includes: a lower electrode formed on a semiconductor substrate to have a three-dimensional shape; a capacitor insulating film formed to cover the lower electrode and made of a ferroelectric material; and an upper electrode formed on the capacitor insulating film to have a step portion. A stress control layer is formed on the upper electrode to cause tensile stress and function as a moisture diffusion barrier.
摘要翻译： 具有三维结构的电容器器件包括：形成在半导体衬底上以形成三维形状的下电极; 形成为覆盖下电极并由铁电体材料制成的电容器绝缘膜; 以及形成在电容器绝缘膜上的上电极，以具有台阶部分。 在上部电极上形成应力控制层，产生拉伸应力，作为水分扩散阻挡层发挥作用。
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公开(公告)号：US20060065918A1
公开(公告)日：2006-03-30
申请号：US11270615
申请日：2005-11-10
申请人： Yoshihisa Nagano , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Yasuhiro Uemoto
IPC分类号： H01L21/8244
CPC分类号： H01L27/10894 , H01L27/10852 , H01L27/11507 , H01L27/11509 , H01L28/55
摘要： A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.
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公开(公告)号：US06756282B2
公开(公告)日：2004-06-29
申请号：US10164409
申请日：2002-06-10
申请人： Yoshihisa Nagano , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Yasuhiro Uemoto
IPC分类号： H01L2120
CPC分类号： H01L27/10894 , H01L27/10852 , H01L27/11507 , H01L27/11509 , H01L28/55
摘要： A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.
摘要翻译： 保护绝缘膜沉积在形成在半导体衬底上的第一和第二场效应晶体管上。 在保护绝缘膜上形成由电容器下电极构成的电容器，由绝缘金属氧化物膜构成的电容绝缘膜和电容器上电极。 形成在保护绝缘膜中的第一接触插塞提供电容器下电极和第一场效应晶体管的杂质扩散层之间的直接连接。 形成在保护绝缘膜中的第二接触插塞提供电容器上电极和第二场效应晶体管的杂质扩散层之间的直接连接。
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公开(公告)号：US5652171A
公开(公告)日：1997-07-29
申请号：US594945
申请日：1996-01-31
申请人： Yoshihisa Nagano , Eiji Fujii
发明人： Yoshihisa Nagano , Eiji Fujii
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/3213 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L21/70 , H01L27/00
CPC分类号： H01L21/02071 , H01L21/32136 , H01L28/60 , H01L28/65
摘要： A platinum bottom electrode film, a dielectric film composed of a high permittivity dielectric material or a ferroelectric material, and a platinum top electrode film are formed on a substrate on which circuit elements and wiring are formed, and the platinum top electrode film and the dielectric film are selectively dry-etched by using etching gas containing chlorine, then plasma generated by discharging gas containing fluorine is irradiated. By this method of manufacturing a semiconductor device including a capacitor, there is almost no residual chlorine, and hence erosion of the dielectric film by residual chlorine is prevented.
摘要翻译： 在其上形成有电路元件和布线的基板上形成铂底部电极膜，由介电常数高的电介质材料或铁电体材料构成的电介质膜和铂电极膜，并且铂顶部电极膜和电介质 通过使用含有氯的蚀刻气体选择性地干蚀刻膜，然后照射通过排出含氟气体产生的等离子体。 通过这种制造包括电容器的半导体器件的方法，几乎没有残留的氯，因此防止了由残留氯引起的电介质膜的腐蚀。
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公开(公告)号：US5430671A
公开(公告)日：1995-07-04
申请号：US224589
申请日：1994-04-07
申请人： Hiroshige Hirano , Tatsumi Sumi , Yoshihisa Nagano
发明人： Hiroshige Hirano , Tatsumi Sumi , Yoshihisa Nagano
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A semiconductor memory device comprising bit line, word line, plate electrode, ferroelectric capacitor having first electrode and second electrode, said second electrode being coupled to said plate electrode, MOS transistor the source of which is coupled to said first electrode, the gate is coupled to said word line and the drain is coupled to said bit line, and adjusting capacitor for adjusting bit line capacitance coupled to said bit line. The adjusting capacitor is provided to increase the potential difference for reading and control occurrence of operating errors.
摘要翻译： 一种半导体存储器件，包括位线，字线，平板电极，具有第一电极和第二电极的铁电电容器，所述第二电极耦合到所述平板电极，MOS晶体管的源极耦合到所述第一电极，栅极耦合 到所述字线，并且所述漏极耦合到所述位线，以及调整电容器，用于调整耦合到所述位线的位线电容。 提供调整电容器以增加用于读取和控制操作错误发生的电位差。
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公开(公告)号：US07791119B2
公开(公告)日：2010-09-07
申请号：US11693960
申请日：2007-03-30
申请人： Akihiro Odagawa , Yoshihisa Nagano
发明人： Akihiro Odagawa , Yoshihisa Nagano
IPC分类号： H01L29/94
CPC分类号： H01L45/145 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1625 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.
摘要翻译： 提供了具有与常规元件不同的构造并且与半导体制造工艺的亲和性优异且在含氢气氛下的热处理稳定性优异的电阻元件。 电阻元件包括具有两个或更多个状态的电阻层，其中电阻值不同并且可以通过施加预定电压或电流从两个或更多个状态中的一个切换到另一个状态。 电阻层包括能够形成氮化物的第一和第二元素和氮。
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59.发明申请公开(公告)号：US20070246832A1
公开(公告)日：2007-10-25
申请号：US11693960
申请日：2007-03-30
申请人： Akihiro ODAGAWA , Yoshihisa Nagano
发明人： Akihiro ODAGAWA , Yoshihisa Nagano
IPC分类号： H01L23/48
CPC分类号： H01L45/145 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1625 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.
摘要翻译： 提供了具有与常规元件不同的构造并且与半导体制造工艺的亲和性优异且在含氢气氛下的热处理稳定性优异的电阻元件。 电阻元件包括具有两个或更多个状态的电阻层，其中电阻值不同并且可以通过施加预定电压或电流从两个或更多个状态中的一个切换到另一个状态。 电阻层包括能够形成氮化物的第一和第二元素和氮。
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公开(公告)号：US06847074B2
公开(公告)日：2005-01-25
申请号：US09785502
申请日：2001-02-20
申请人： Yoshihisa Nagano , Tooru Nasu , Shinichiro Hayashi , Eiji Fujii
发明人： Yoshihisa Nagano , Tooru Nasu , Shinichiro Hayashi , Eiji Fujii
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242 , H01L27/105 , H01L29/72
CPC分类号： H01L28/75 , H01L27/10852 , H01L28/55
摘要： A semiconductor memory device according to the present invention includes a memory cell capacitor for storing data thereon. The capacitor is made up of a first electrode connected to a contact plug, a second electrode and a capacitive insulating film interposed between the first and second electrodes. The first electrode includes a first barrier film in contact with the contact plug and a second barrier film, which is formed on the first barrier film and prevents the diffusion of oxygen. The second barrier film covers the upper and side faces of the first barrier film.
摘要翻译： 根据本发明的半导体存储器件包括用于在其上存储数据的存储单元电容器。 电容器由连接到第一和第二电极之间的接触插塞，第二电极和电容绝缘膜的第一电极组成。 第一电极包括与接触塞接触的第一阻挡膜和形成在第一阻挡膜上并防止氧的扩散的第二阻挡膜。 第二阻挡膜覆盖第一阻挡膜的上表面和侧面。
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